STTH3012. Ultrafast recovery V diode. Main product characteristics. Features and benefits. Description. Order codes DO-247 STTH3012W
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1 STTH312 Ultrafast recovery - 1 V diode Main product characteristics I (V) V RRM T j V (typ) t rr (typ) eatures and benefits Ultrafast, soft recovery 3 1 V 175 C 1.3 V 57 ns Very low conduction and switching losses High frequency and/or high pulsed current operation High reverse voltage capability High junction temperature K K DO-247 STTH312W K TO-2C STTH312D Description The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability. Such demanding applications include industrial power supplies, motor control, and similar mission-critical systems that require rectification and freewheeling. These diodes also fit into auxiliary functions such as snubber, bootstrap, and demagnetization applications. The improved performance in low leakage current, and therefore thermal runaway guard band, is an immediate competitive advantage for this device. Order codes Part Number STTH312D STTH312W Marking STTH312D STTH312W March 6 Rev 1 1/9 9
2 Characteristics STTH312 1 Characteristics Table 1. bsolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 1 V I (RMS) RMS forward current 5 I (V) verage forward current, δ =.5 T c = 5 C 3 I RM Repetitive peak forward current t p = 5 µs, = 5 khz square 3 I SM Surge non repetitive forward current t p = ms Sinusoidal 2 T stg Storage temperature range -65 to C T j Maximum operating junction temperature 175 C Table 2. Thermal parameters Symbol Parameter Value Unit R th(j-c) Junction to case.95 C/W Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ Max. Unit I R (1) Reverse leakage current T j = 25 C V R = V RRM T j = 125 C µ T j = 25 C 2.1 T j = 125 C I = V (2) orward voltage drop T j = 15 C T j = 25 C 2.25 V T j = 125 C I = T j = 15 C Pulse test: t p = 5 ms, δ < 2 % 2. Pulse test: t p = 38 µs, δ < 2 % To evaluate the conduction losses use the following equation: P = 1.6 x I (V) +.12 I 2 (RMS) 2/9
3 STTH312 Characteristics Table 4. Dynamic characteristics Symbol Parameter Test conditions Min. Typ Max. Unit t rr Reverse recovery time I = 1, di /dt = -5 /µs, V R = 3 V, T j = 25 C I = 1, di /dt = - /µs, V R = 3 V, T j = 25 C ns I RM Reverse recovery current I = 3, di /dt = - /µs, V R = 6 V, T j = 125 C S Softness factor I = 3, di /dt = - /µs, V R = 6 V, T j = 125 C 1.5 t fr orward recovery time I = 3 di /dt = /µs V R = 1.5 x V max, T j = 25 C 55 ns V P orward recovery voltage I = 3, di /dt = /µs, T j = 25 C 6 V igure 1. P(W) Conduction losses versus average current δ =.1 δ =.5 δ = 1 I (V) () δ =.2 δ =.5 δ=tp/t T tp igure I M() orward voltage drop versus forward current T j=15 C (maximum values) T j=15 C (typical values) V M(V) T j= 25 C (maximum values) /9
4 Characteristics STTH312 igure 3. Relative variation of thermal impedance junction to case versus pulse duration igure 4. Peak reverse recovery current versus di /dt (typical values) Z th(j-c) /Rth(j-c) Single pulse t (s) p 1.E-3 1.E-2 1.E-1 1.E I RM() V R=6V I =.5 x I(V) I=I (V) I =2 x I(V) igure 5. Reverse recovery time versus di /dt (typical values) igure 6. Reverse recovery charges versus di /dt (typical values) 8 7 t (ns) rr V R=6V 8 7 Q (µc) rr V R=6V I =2 x I(V) 6 I =2 x I(V) I=I (V) 6 5 I=I (V) I =.5 x I(V) 3 I =.5 x I(V) igure 7. Softness factor versus di /dt (typical values) igure 8. Relative variations of dynamic parameters versus junction temperature 3. S factor I 2xI(V) V R=6V S factor I=I (V) V R=6V Reference: trr IRM QRR T ( C) j /9
5 STTH312 Characteristics igure 9. Transient peak forward voltage versus di /dt (typical values) igure. orward recovery time versus di /dt (typical values) 3 25 V P(V) I=I (V) 1 9 t (ns) fr I=I (V) V R=1.5 x V max igure 11. Junction capacitance versus reverse voltage applied (typical values) C(p) =1MHz V OSC=3mVRMS T j=25 C V (V) R 1 5/9
6 Package information STTH312 2 Package information Epoxy meets UL94, V Cooling method: by conduction (C) Recommended torque value:.55 Nm (TO-2C) Recommended torque value:.8 Nm (DO-247) Maximum torque value:.7 Nm (TO-2C) Maximum torque value: 1. Nm (DO-247) Table 5. DO-247 dimensions DIMENSIONS RE. Millimeters Inches Min. Max Min. Max V D E V Dia H G L5 H L L L2 L4 L L1 L L3 V2 3 D L G M E L L M V 5 5 V2 6 6 Dia /9
7 STTH312 Package information Table 6. T-2C dimensions DIMENSIONS RE. Millimeters Inches Min. Max. Min. Max. H2 Ø I C C L5 L7 D E L L L9 D G H L4 L typ..645 typ. G M E L L L L L M 2.6 typ..2 typ. Diam. I In order to meet environmental requirements, ST offers these devices in ECOPCK packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPCK is an ST trademark. ECOPCK specifications are available at: 7/9
8 Ordering information STTH312 3 Ordering information Part Number Marking Package Weight Base qty Delivery mode STTH312D STTH312D TO-2C 1.86 g 5 Tube STTH312W STTH312W DO g 3 Tube 4 Revision history Date Revision Description of Changes 2-Mar-6 1 irst issue. 8/9
9 STTH312 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. ll ST products are sold pursuant to ST s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET ORTH IN ST S TERMS ND CONDITIONS O SLE ST DISCLIMS NY EXPRESS OR IMPLIED WRRNTY WITH RESPECT TO THE USE ND/OR SLE O ST PRODUCTS INCLUDING WITHOUT LIMITTION IMPLIED WRRNTIES O MERCHNTBILITY, ITNESS OR PRTICULR PURPOSE (ND THEIR EQUIVLENTS UNDER THE LWS O NY JURISDICTION), OR INRINGEMENT O NY PTENT, COPYRIGHT OR OTHER INTELLECTUL PROPERTY RIGHT. UNLESS EXPRESSLY PPROVED IN WRITING BY N UTHORIZE REPRESENTTIVE O ST, ST PRODUCTS RE NOT DESIGNED, UTHORIZED OR WRRNTED OR USE IN MILITRY, IR CRT, SPCE, LIE SVING, OR LIE SUSTINING PPLICTIONS, NOR IN PRODUCTS OR SYSTEMS, WHERE ILURE OR MLUNCTION MY RESULT IN PERSONL INJURY, DETH, OR SEVERE PROPERTY OR ENVIRONMENTL DMGE. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. ll other names are the property of their respective owners. 6 STMicroelectronics - ll rights reserved STMicroelectronics group of companies ustralia - Belgium - Brazil - Canada - China - Czech Republic - inland - rance - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of merica 9/9
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