TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER

Transcription

1 STTH22TV TURBO 2 ULTRAAST HIGH VOLTAGE RECTIIER MAIN PRODUCT CHARACTERISTICS I (AV) Up to 2 x 12 A V RRM 2 V T j 15 C V (typ).75 V t rr (typ) 41 ns EATURES AND BENEITS Suited for SMPS Very Low orward Losses Low recovery time High surge current capability Insulated: Insulating voltage=25v RMS Capacitance = 55p K2 A1 A2 A2 K1 K2 K1 A1 ISOTOP STTH22TV1 DESCRIPTION Dual rectifier suited for welding equipment, high power industrial application. Packaged in Isotop, this device is intended for use in the secondary rectification of the applications. ABSOLUTE RATINGS (limiting values, per diode) Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 2 V I (RMS) RMS forward voltage 17 A I (AV) Average forward current Tc = 95 C Per diode A δ =.5 Tc = 8 C Per diode 12 I SM Surge non repetitive forward current tp = 1ms sinusoidal A T stg Storage temperature range -55 to + 15 C T j Maximum operating junction temperature 15 C Order Codes Part Number STTH22TV1 Marking STTH22TV1 July 24 REV. 2 1/5

2 STTH22TV THERMAL RESISTANCE Symbol Parameter Maximum Unit R th(j-c) Junction to case Per diode.52 C/W Total.31 R th(c) Coupling.1 C/W When the diodes 1 and 2 are used simultaneously: Tj(diode 1) = P(diode 1) x R th(j-c) (Per diode) + P(diode 2) x R th(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter Test conditions Min. Typ Max. Unit I R * Reverse leakage current T j = 25 C V R = V RRM µa T j = 125 C 8 8 V ** orward voltage drop T j = 25 C I = A 1.5 V I = 2A 1.2 Pulse test: * tp = 5 ms, δ < 2% ** tp = 38 µs, δ < 2% To evaluate the conduction losses use the following equation: P =.65 x I (AV) +.2 I 2 (RMS) DYNAMIC CHARACTERISTICS (per diode) T j = 15 C I = A I = 2A 1.5 Symbol Parameter Test conditions Min. Typ Max. Unit t rr Reverse recovery time T j = 25 C I = 1A di /dt = 2 A/µs V R =3V 41 5 ns I RM t fr V P Reverse recovery current orward recovery time orward recovery voltage T j = 125 C I = A V R = 16V di /dt = 2 A/µs A T j = 25 C I = A di /dt = 2 A/µs V R = 1.1 x V max 8 ns T j = 25 C I = A di /dt = 2 A/µs 2.5 V 2/5

3 STTH22TV ig. 1: Peak current versus duty cycle (per diode). 6 I (A) M ig. 2-1: orward voltage drop versus forward current 2 I M(A) 5 4 P = 8W δ=tp/t T tp T j=15 C 3 P = 12W P = 16W ig. 2-2: orward voltage drop versus forward current (maximum values, per diode). δ 4 2 V M(V) ig. 3: Relative variation of thermal impedance junction to case versus pulse duration. 2 I M(A) 1. Z th(j-c) /Rth(j-c) T j=15 C V M(V) Single pulse t (s) p 1.E-3 1.E-2 1.E-1 1.E+ 1.E+1 ig. 4: Junction capacitance versus reverse voltage applied ig. 5: Reverse recovery charges versus di /dt C(p) =1MHz V OSC=3mVRMS 9 8 Q (nc) rr I =A V R=16V V (V) R /5

4 STTH22TV ig. 6: Reserve recovery time versus di /dt ig. 7: Peak reverse recovery current versus di /dt 12 t (ns) rr I =A V R=16V 25 2 I RM(A) I =A V R=16V ig. 8: Dynamic parameters versus junction temperature Q RR;I RM [Tj] / Q RR; I RM [] I =A V R=16V 1. IRM.8.6 QRR.4.2. T ( C) j /5

5 STTH22TV PACKAGE MECHANICAL DATA ISOTOP RE. DIMENSIONS Millimeters Inches Min. Max. Min. Max. A A B C C D D E E E typ..976 typ. G G G P P S ORDERING INORMATION Ordering type Marking Package Weight Base qty STTH22TV1 STTH22TV1 ISOTOP 27 g (without screws) 1 (with screws) Delivery mode Tube Epoxy meets UL94, V Cooling method: by conduction (C) REVISION HISTORY Table 1: Revision history Date Revision Description of Changes 26-May-24 1 irst issue 13-Jul-24 2 igure 6 legend corrected: orward changed to Reverse Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners 24 STMicroelectronics - All rights reserved STMicroelectronics GROUP O COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - inland - rance - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States 5/5