STPS2045CT/CF/CG/CFP/CR
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- Primrose Wade
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1 STPS245CT/CF/CG/CFP/CR MAIN PRODUCT CHARACTERISTICS I F(AV) 2x1A V RRM 45 V Tj (max) 175 C V F (max).57 V FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING INSULATED PACAGE: ISOWATT22AB, Insulating voltage = 2V DC Capacitance = 12pF AVALANCHE CAPABILITY SPECIFIED DESCRIPTION Dual center tap Schottky rectifier suited for SwitchMode Power Supply and high frequency DC to DC converters. Packaged either in TO-22AB, I²PA, ISOWATT22AB, or D 2 PA, this device is especially intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. ABSOLUTE RATINGS (limiting values, per diode) POWER SCHOTTY RECTIFIER D 2 PA STPS245CG Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 45 V I F(RMS) RMS forward current 3 A I F(AV) Average forward current δ =.5 TO-22AB / D 2 PA / I²PA ISOWATT22AB TO-22AB STPS245CT I²PA STPS245CR Tc = 155 C Per diode 1 A Tc = 125 C Per device 2 I FSM Surge non repetitive forward current tp = 1 ms sinusoidal 18 A I RRM Repetitive peak reverse current tp =2µs square F = 1kHz 1 A I RSM Non repetitive peak reverse current tp = 1 ms square 2 A P ARM Repetitive peak avalanche power tp = 1µs Tj = 25 C 4 W T stg Storage temperature range -65 to +175 C Tj Maximum operating junction temperature * 175 C dv/dt Critical rate of rise of reverse voltage 1 V/µs *: dptot 1 < thermal runaway condition for a diode on its own heatsink dtj Rth( j a) July 23 - Ed: 4F ISOWATT22AB STPS245CF STPS245CFP 1/8
2 THERMAL RESISTANCES Symbol Parameter Value Unit R th (j-c) Junction to case TO-22AB / D 2 PA I²PA Per diode Total C/W ISOWATT22AB Per diode Total R th (c) When the diodes 1 and 2 are used simultaneously: TO-22AB / D 2 PA I²PA ISOWATT22AB Coupling Tj (diode 1) = P (diode1) x R th(j-c) (per diode) + P (diode 2) x R th(c) STATIC ELECTRICAL CHARACTERISTICS (Per diode) Symbol Parameter Tests Conditions Min. Typ. Max. Unit I R * Reverse leakage current Tj = 25 C V R =V RRM 1 µa Tj = 125 C 7 15 ma V F * Forward voltage drop Tj = 125 C I F = 1 A.5.57 V Tj=25 C I F = 2 A.84 Tj = 125 C I F = 2 A Pulse test : * tp = 38 µs, δ <2% To evaluate the conduction losses use the following equation : P=.42xI F(AV) +.15 I F 2 (RMS) 2/8
3 Fig. 1: Average forward power dissipation versus average forward current (per diode). Fig. 2: Average current versus ambient temperature (δ=.5, per diode). PF(av)(W) δ =.1 δ =.2 δ =.5 δ =.5 δ = 1 T 1 IF(av) (A) δ=tp/t tp IF(av)(A) T Rth(j-a)=15 C/W Rth(j-a)=Rth(j-c) ISOWATT22AB TO-22AB D²PA 2 δ=tp/t tp Tamb( C) Fig. 3: Normalized avalanche power derating versus pulse duration. Fig. 4: Normalized avalanche power derating versus junction temperature. P ARM(t p) P ARM(1µs) 1 P ARM(t p) P ARM(25 C) t p(µs) T j( C) Fig. 5-1: Non repetitive surge peak forward current versus overload duration (maximum values, per diode) (TO-22AB, D 2 PA and I²PA). Fig. 5-2: Non repetitive surge peak forward current versus overload duration (maximum values, per diode) (ISOWATT22AB, ) IM(A) IM Tc=75 C Tc=1 C Tc=125 C 2 t δ=.5 t(s) 1E-3 1E-2 1E-1 1E IM(A) IM Tc=75 C Tc=1 C Tc=125 C 2 t δ=.5 t(s) 1E-3 1E-2 1E-1 1E+ 3/8
4 Fig. 6-1: Relative variation of thermal transient impedance junction to case versus pulse duration (TO-22AB, D 2 PA and I²PA) Zth(j-c)/Rth(j-c) Fig. 6-2: Relative variation of thermal transient impedance junction to case versus pulse duration (ISOWATT22AB, ) Zth(j-c)/Rth(j-c).6 δ =.5.6 δ = T δ =.2 δ =.1 tp(s) δ=tp/t tp Single pulse. 1E-4 1E-3 1E-2 1E-1 1E+.4 δ =.2.2 δ =.1 Single pulse tp(s) δ=tp/t tp. 1E-3 1E-2 1E-1 1E+ 1E+1 T Fig. 7: Reverse leakage current versus reverse voltage applied (typical values, per diode). Fig. 8: Junction capacitance versus reverse voltage applied (typical values, per diode). IR(µA) 5E+4 1E+4 1E+3 Tj=15 C Tj=125 C Tj=1 C 1 5 C(pF) F=1MHz Tj=25 C 1E+2 1E+1 Tj=75 C Tj=5 C Tj=25 C 1E+ VR(V) 1E VR(V) Fig. 9: Forward voltage drop versus forward current (maximum values, per diode) IFM(A) Tj=125 C Typical values Tj=125 C Tj=25 C VFM(V) Fig. 1: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board, copper thickness: 35µm). Rth(j-a) ( C/W) S(Cu) (cm²) /8
5 PACAGE MECHANICAL DATA D 2 PA REF. Millimeters Inches L2 E C2 A A L L3 G B2 B C R D B B C C D E G L L M * V2 L M * FLAT ZONE NO LESS THAN 2mm R.4 typ..16 typ. V2 8 8 FOOTPRINT (in millimeters) /8
6 PACAGE MECHANICAL DATA TO-22AB REF. Millimeters Inches L2 F2 F1 F G1 H2 Dia G L5 L9 L6 L4 A C D M E L7 A C D E F F F G G H L typ..645 typ. L L L L L M 2.6 typ..12 typ. Diam PACAGE MECHANICAL DATA REF. Millimeters Inches L3 L2 L4 G1 H G L6 L5 F1 F2 F Dia D A B E L7 A B D E F F F G G H L2 16 Typ..63 Typ. L L L L L Dia /8
7 PACAGE MECHANICAL DATA I²PA REF. Millimeters Inches L2 E c2 A A b b b D c c D L L1 b2 b1 e E L L L e b c PACAGE MECHANICAL DATA ISOWATT22AB REF. Millimeters Inches A B D E F F F G G H L2 16. typ..63 typ. L L L L Diam /8
8 Type Marking Package Weight Base qty Delivery mode STPS245CT STPS245CT TO-22AB 2.25 g. 5 Tube STPS245CF STPS245CF ISOWATT22AB 2.8 g. 5 Tube STPS245CFP STPS245CFP 2. g 5 Tube STPS245CG STPS245CG D 2 PA 1.48 g. 5 Tube STPS245CG-TR STPS245CG D 2 PA 1.48 g. 1 Tape & reel STPS245CR STPS245CR I²PA 1.49 g. 5 Tube Cooling method: by conduction (C) Recommended torque value:.55 N.m. Maximum torque value:.7 N.m. Epoxy meets UL94,V Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 23 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong ong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United ingdom - United States. 8/8
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