STPS10H100CT/CG/CR/CFP

Transcription

1 STPS1H1CT/CG/CR/CFP HIGH VOLTG POWR SCHOTTY RCTIFIR MIN PROUCT CHRCTRISTICS I F(V) V RRM 2x5 1 V Tj 175 C V F (max).61 V FTURS N BNFITS HIGH JUNCTION TMPRTUR CPBILITY FOR CONVRTRS LOCT IN CONFIN NVIRONMNT LOW LG CURRNT T HIGH TMPRTUR LOW STTIC N YNMIC LOSSS S RSULT OF TH SCHOTTY BRRIR VLNCH CPBILITY SPCIFI 2 P STPS1H1CG I 2 P STPS1H1CR SCRIPTION Schottky barrier rectifier designed for high frequency miniature Switched Mode Power Supplies such as adaptators and on board C/C converters. Packaged in TO-22B, TO-22FPB, 2 P and I 2 P. BSOLUT RTINGS (limiting values, per diode) TO-22B STPS1H1CT TO-22FPB STPS1H1CFP Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 1 V I F(RMS) RMS forward current 1 I F(V) verage forward current δ =.5 TO-22B Tc = 165 C 2 P/I 2 P TO-22FPB Tc = 16 C per diode per device I FSM Surge non repetitive forward current tp = 1 ms sinusoidal 18 I RRM Repetitive peak reverse current tp =2µssquare F = 1kHz 1 P RM Repetitive peak avalanche power tp = 1µs Tj = 25 C 72 W T stg Storage temperature range - 65 to C Tj Maximum operating junction temperature * 175 C dv/dt Critical rate of rise of reverse voltage 1 V/µs *: dptot 1 < thermal runaway condition for a diode on its own heatsink dtj Rth( j a) July 23 - d: 3F 5 1 1/7

2 THRML RSISTNCS Symbol Parameter Value Unit R th (j-c) Junction to case 2P / I2P Per diode 2.2 C/W TO-22B Total 1.3 R th (c) Coupling.3 R th (j-c) Junction to case TO-22FPB Per diode 4.5 C/W Total 3.5 R th (c) Coupling 2.5 When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1) x R th(j-c) (Per diode) + P(diode 2) x R th(c) STTIC LCTRICL CHRCTRISTICS (per diode) Symbol Parameter Tests conditions Min. Typ. Max. Unit I R * Reverse leakage current Tj = 25 C V R =V RRM 3.5 µ Tj = 125 C m V F ** Forward voltage drop Tj = 25 C I F = 5.73 V Tj = 125 C Tj=25 C I F = 1.85 Tj = 125 C Pulse test : * tp =5ms,δ<2% ** tp = 38 µs, δ <2% To evaluate the maximum conduction losses use the following equation : P=.51xI F(V) +.2xI F 2 (RMS) Fig. 1: verage forward power dissipation versus average forward current (per diode). Fig. 2: verage forward current versus ambient temperature (δ=.5, per diode). 4. PF(av)(W) δ =.1 δ =.2 δ =.5 δ =.5 δ = 1 T.5 IF(av) () δ=tp/t tp IF(av)() Rth(j-a)=Rth(j-c) ²P/I²P/TO-22B TO-22FPB Rth(j-a)=15 C/W 2 1 Tamb( C) /7

3 Fig. 3: Normalized avalanche power derating versus pulse duration. Fig. 4: Normalized avalanche power derating versus junction temperature. P RM(t p) P RM(1µs) 1 P RM(t p) P RM(25 C) t p(µs) T j( C) Fig. 5-1: Non repetitive surge peak forward current versus overload duration (maximum values, per diode) 12 IM() IM Tc=5 C Tc=75 C Tc=125 C 2 t δ=.5 t(s) Fig. 5-2: Non repetitive surge peak forward current versus overload duration (maximum values, per diode)(to-22fpb) IM() Tc=5 C 5 4 Tc=75 C 3 Tc=125 C 2 IM 1 t t(s) δ= Fig. 6-1: Relative variation of thermal impedance junction to case versus pulse duration (per diode). 1. Zth(j-c)/Rth(j-c).8 Fig. 6-2: Relative variation of thermal impedance junction to case versus pulse duration (per diode).(to-22fpb) 1..8 Zth(j-c)/Rth(j-c).6 δ =.5.6 δ = δ =.2 δ =.1 T Single pulse tp(s) δ=tp/t tp.4 δ =.2.2 δ =.1 Single pulse tp(s) δ=tp/t tp T 3/7

4 Fig. 7: Reverse leakage current versus reverse voltage applied (typical values, per diode). Fig. 8: Junction capacitance versus reverse voltage applied (typical values, per diode). 1+4 IR(µ) Tj=15 C Tj=125 C Tj=1 C 1 C(pF) F=1MHz Tj=25 C 1 1+ Tj=25 C 1-1 VR(V) VR(V) Fig. 9: Forward voltage drop versus forward current (maximum values, per diode). Fig. 1: Thermal resistance junction to ambient versus copper surface under tab (poxy printed circuit board FR4, copper thickness: 35µm) 1. IFM() Tj=125 C Typical values Tj=15 C Typical values Tj=25 C Tj=125 C VFM(V) Rth(j-a) ( C/W) S(Cu) (cm²) /7

5 PCG MCHNICL T 2 P IMNSIONS L L3 G B2 B C2 C R M * V2 * FLT ZON NO LSS THN 2mm RF. Millimeters Inches B B C C G L L M R.4 typ..16 typ. V2 8 8 FOOT PRINT in millimeters /7

6 PCG MCHNICL T I 2 P IMNSIONS RF. Millimeters Inches c b b b c c L L1 b2 b e L e b c L PCG MCHNICL T TO-22FPB RF. IMNSIONS Millimeters Inches L3 L4 G1 H G L6 L5 F1 F2 F ia B L B F F F G G H Typ..63 Typ. L L L L L ia /7

7 PCG MCHNICL T TO-22B F2 F1 F G1 H2 ia G L5 L9 L6 L4 C M L7 RF. IMNSIONS Millimeters Inches C F F F G G H typ..645 typ. L L L L L M 2.6 typ..12 typ. iam Cooling method: C. Recommended torque value:.55 m.n Maximum torque value.7 m.n Ordering type Marking Package Weight Base qty elivery mode STPS1H1CT STPS1H1CT TO-22B 2.2g 5 Tube STPS1H1CFP STPS1H1CFP TO-22FPB 2. g 5 Tube STPS1H1CG STPS1H1CG 2 P 1.48g 5 Tube STPS1H1CG-TR STPS1H1CG 2 P 1.48g 1 Tape and reel STPS1H1CR STPS1H1CR I 2 P 1.49g 5 Tube poxy meets UL94,V Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 23 STMicroelectronics - Printed in Italy - ll rights reserved. STMicroelectronics GROUP OF COMPNIS ustralia - Brazil - Canada - China - Finland - France - Germany Hong ong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United ingdom - United States. 7/7