Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 45 V I F(RMS) RMS forward current 20 A Average forward current δ = 0.
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1 SPS745/F//FP POWR SCHOY RCIFIR MIN PROUC CHRCRISICS I F(V) 7.5 V RRM 45 V j (max) 75 C V F (max).57 V FURS N BNFIS VRY SMLL CONUCION LOSSS NLIIBL SWICHIN LOSSS XRMLY FS SWICHIN INSUL PC: ISOW22C, O-22FPC Insulating voltage = 2V C Capacitance = 2pF VLNCH CPBILIY SPCIFI O-22C SPS745 ISOW22C SPS745F SCRIPION Single Schottky rectifier suited for Switch Mode Power Supply and high frequency C to C converters. Packaged either in O-22C, ISOW22C, O-22FPC or 2 P, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. NC 2 P SPS745 O-22FPC SPS745FP BSOLU RINS (limiting values) Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 45 V I F(RMS) RMS forward current 2 I F(V) verage forward current δ =.5 O-22C / 2 P ISOW22C/ O-22FPC c = 6 C 7.5 c = 45 C I FSM Surge non repetitive forward current tp = ms sinusoidal 5 I RRM Repetitive peak reverse current tp =2µssquare F = khz I RSM Non repetitive peak reverse current tp = µs square 2 P RM Repetitive peak avalanche power tp = µs j = 25 C 27 W stg Storage temperature range - 65 to + 75 C j Maximum operating junction temperature * 75 C dv/dt Critical rate of rise of reverse voltage V/µs *: dptot < thermal runaway condition for a diode on its own heatsink dj Rth( j a) July 23 - d: 6 /7
2 HRML RSISNCS Symbol Parameter Value Unit R th (j-c) Junction to case O-22C / 2 P 3. C/W ISOW22C/ O-22FPC 5.5 SIC LCRICL CHRCRISICS Symbol Parameter ests Conditions Min. yp. Max. Unit I R * Reverse leakage current j = 25 C V R =V RRM µ j = 25 C 5 5 m V F * Forward voltage drop j = 25 C I F = V j=25 C I F = 5.84 j = 25 C I F = Pulse test : * tp = 38 µs, δ <2% o evaluate the conduction losses use the following equation : P=.42xI F(V) +.2 I F 2 (RMS) Fig. : verage forward power dissipation versus average forward current. Fig. 2: verage current versus ambient temperature (δ =.5) PF(av)(W) δ =. δ =.2 δ =.5 δ =.5 δ = IF(av) () δ=tp/ tp IF(av)() Rth(j-a)=Rth(j-c) O-22C ISOW22B Rth(j-a)=5 C/W Rth(j-a)=4 C/W δ=tp/ tp amb( C) /7
3 Fig. 3: Normalized avalanche power derating versus pulse duration. Fig. 4: Normalized avalanche power derating versus junction temperature. P RM(t p) P RM(µs) P RM(t p) P RM(25 C) t p(µs).2 j( C) Fig. 5-: Non repetitive surge peak forward current versus overload duration (maximum values) (O-22C and 2 P). Fig. 5-2: Non repetitive surge peak forward current versus overload duration (maximum values) (ISOW22C/O-22FPC) IM() IM c=5 C c= C c=5 C 2 t δ=.5 t(s) IM() c=5 C 4 c= C 3 c=5 C 2 IM t δ=.5 t(s) Fig. 6-: Relative variation of thermal transient impedance junction to case versus pulse duration (O-22C and 2 P)...8 Zth(j-c)/Rth(j-c) Fig. 6-2: Relative variation of thermal transient impedance junction to case versus pulse duration (ISOW22C/O-22FPC)...8 Zth(j-c)/Rth(j-c).6 δ =.5.6 δ = δ =.2 δ =. tp(s) Single pulse δ=tp/ tp δ =.2 δ =. Single pulse tp(s) δ=tp/ tp /7
4 Fig. 7: Reverse leakage current versus reverse voltage applied (typical values). Fig. 8: Junction capacitance versus reverse voltage applied (typical values). IR(µ) j=5 C C(pF) F=MHz j=25 C +3 j=25 C j= C 5 +2 j=75 C + j=5 C j=25 C + VR(V) VR(V) Fig. 9: Forward voltage drop versus forward current (maximum values).... IFM() j=25 C ypical values j=25 C j=25 C VFM(V) Fig. : hermal resistance junction to ambient versus copper surface under tab (poxy printed circuit board, copper thickness: 35µm). Rth(j-a) ( C/W) S(Cu) (cm²) /7
5 PC MCHNICL 2 P (Plastic) IMNSIONS C2 RF. Millimeters Inches Min. Max. Min. Max L B L3 B C B2 B C R C L M * V L * FL ZON NO LSS HN 2mm M R.4 typ..6 typ. V2 8 8 FOOPRIN IMNSIONS (in millimeters) /7
6 PC MCHNICL O-22FPC IMNSIONS RF. Millimeters Inches L3 L4 H F F L6 L5 ia B L7 Min. Max. Min. Max B F F H yp..63 yp. L L L L L ia PC MCHNICL O-22C IMNSIONS RF. Millimeters Inches Min. Max. Min. Max. H2 C C Ø I L5 L L6 F F L9 F L H typ..645 typ. F M L L L L L M 2.6 typ..2 typ. iam. I /7
7 iam SPS745/F//FP PC MCHNICL ISOW22C F H F L6 L3 B L7 RF. IMNSIONS Millimeters Inches Min. yp. Max. Min. yp. Max B F F H L L L iam ype Marking Package Weight Base qty elivery mode SPS745 SPS745 O-22C.86 g. 5 ube SPS745F SPS745F ISOW22C 2 g. 5 ube SPS745 SPS745 2 P.48 g. 5 ube SPS745-R SPS745 2 P.48 g. ape & reel SPS745FP SPS745FP O-22FPC.9 g. 5 ube Cooling method: by conduction (C) Recommended torque value:.55 N.m Maximum torque value:.7 N.m. poxy meets UL94,V Information furnished is believed to be accurate and reliable. However, SMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SMicroelectronics. Specifications mentioned in this publication are subject to change without notice. his publication supersedes and replaces all information previously supplied. SMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SMicroelectronics. he S logo is a registered trademark of SMicroelectronics 23 SMicroelectronics - Printed in Italy - ll rights reserved. SMicroelectronics ROUP OF COMPNIS ustralia - Brazil - Canada - China - Finland - France - ermany Hong ong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United ingdom - United States. 7/7
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