STPS2L40. Low drop power Schottky rectifier. Features. Description

Transcription

1 SPS2L4 Low drop power Schottky rectifier Features Very small conduction losses Negligible switching losses Low forward voltage drop Surface mount miniature package Avalanche capability specified ECOPACK2 halogen-free component ( and ) Description Single chip Schottky rectifiers suited to Switched Mode Power Supplies and high frequency DC to DC converters. Packaged in SMB, low profile SMB and low profile SMA, this device is especially intended for surface mounting and used in low voltage, high frequency inverters, free wheeling and polarity protection applications. able 1. K A SPS2L4AF K Device summary I F(AV) 2 A V RRM 4 V j (max) 15 C V F (max).34 V A SMB SPS2L4U K A SPS2L4UF September 28 Rev 4 1/1 1

2 Characteristics SPS2L4 1 Characteristics able 2. Absolute ratings (limiting values) Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 4 V SMB L = 13 C δ =.5 I F(AV) Average forward current L = 14 C δ =.5 2 A L = 13 C δ =.5 I FSM Surge non repetitive forward current t p = 1 ms sinusoidal 75 A P ARM Repetitive peak avalanche power t p = 1 µs j = 25 C 22 W stg Storage temperature range -65 to + 15 C j Operating junction temperature (1) 15 C 1. dptot condition to avoid thermal runaway for a diode on its own heatsink dj Rth ( j a) able 3. hermal resistances Symbol Parameter Value Unit SMB 2 R th (j-l) Junction to lead 1 C/W 2 able 4. Static electrical characteristics Symbol ests conditions Min. yp. Max. Unit I R (1) V F (1) Reverse leakage current Forward voltage drop j = 25 C 22 µa j = 1 C V R = 4 V 2 ma j = 125 C 38 8 ma j = 25 C.39 I F = 1 A j = 125 C 5 8 j = 25 C 3 I F = 2 A j = 125 C V j = 25 C.5 I F = 4 A j = 125 C.39 5 V 1. Pulse test: t p = 38 µs, δ < 2 o evaluate the conduction losses use the following equation: P = 2 x I F(AV) + 6 I F 2 (RMS) 2/1

3 SPS2L4 Characteristics Figure 1. Average forward power dissipation versus average forward current Figure 2. Average forward current versus ambient temperature (δ =.5) SMB P (W) F(AV) 1.2 δ = 5 δ =.1 δ = δ =.5 δ = 1 I F(AV) (A) δ=tp/ tp I F(AV) (A) δ=tp/ tp R th(j-a) =1 C/W R =Rth(j-l) th(j-a) SMB amb( C) Figure I F(AV) (A) Figure δ=tp/ Average forward current versus ambient temperature (δ =.5) tp R th(j-a) =1 C/W R th(j-a) =Rth(j-l) amb( C) I (A) M IM t δ=.5 Non repetitive surge peak forward current versus overload duration (maximum values) SMB t(s) 1.E-3 1.E-2 1.E-1 1.E+ SMB a=25 C a=75 C a=125 C Figure 4. I F(AV) (A) Figure δ=tp/ Average forward current versus ambient temperature (δ =.5) tp R th(j-a) =2 C/W amb( C) R th(j-a) =R th(j-l) I (A) M IM t δ=.5 Non repetitive surge peak forward current versus overload duration (maximum values) t(s) L=25 C L=75 C L=125 C 1.E-3 1.E-2 1.E-1 1.E+ 3/1

4 Characteristics SPS2L4 Figure I (A) M Non repetitive surge peak forward current versus overload duration (maximum values) Figure 8. 1 P ARM(t p) P ARM(1µs) Normalized avalanche power derating versus pulse duration a=25 C a =75 C a =125 C IM t δ =.5 t(s) 1 1.E-3 1.E-2 1.E-1 1.E t p(µs) Figure 9. Normalized avalanche power derating versus junction temperature Figure 1. Relative variation of thermal impedance junction to ambient versus pulse duration - SMB 1.2 P ARM() j P ARM(25 C).9 Z th(j-a) /Rth(j-a) SMB 1.7 ( C) j Single pulse t (s) p δ=tp/ 1.E-2 1.E-1 1.E+ 1.E+1 1.E+2 1.E+3 tp Figure Z th(j-l) /Rth(j-l) Single pulse Relative variation of thermal impedance junction to lead versus pulse duration - t (s) p δ=tp/ 1.E-4 1.E-3 1.E-2 1.E-1 1.E+ 1.E+1 tp Figure Z th(j-a) /Rth(j-a) Single pulse Relative variation of thermal impedance junction to ambient versus pulse duration - t (s) p 1.E-2 1.E-1 1.E+ 1.E+1 1.E+2 1.E+3 4/1

5 SPS2L4 Characteristics Figure E+2 1.E+1 I (ma) R Reverse leakage current versus reverse voltage applied (typical values) j=125 C Figure C(pF) Junction capacitance versus reverse voltage applied (typical values) F=1MHz V OSC=3mVRMS j=25 C 1.E+ 1.E E-2 j =25 C 1.E-3 V (V) R V (V) R Figure 15. Forward voltage drop versus forward current (high level) Figure 16. Forward voltage drop versus forward current (low level) 1 I FM(A) 3. I FM(A) j=125 C (typical values) 2.5 j=125 C (typical values) j=125 C (maxmimum values) j=25 C (maximum values) j=125 C (maxmimum values) j=25 C (maximum values) FM V (V).5 V FM(V) Figure R th(j-a) ( C/W) hermal resistance junction to ambient versus copper surface under each lead, SMB, (epoxy printed board FR4, copper thickness = 35 µm) SMB S CU(cm²) Figure 18. R th(j-a) ( C/W) hermal resistance junction to ambient versus copper surface under each lead, (epoxy printed board FR4, copper thickness = 35 µm) S CU(cm²) /1

6 Package Information SPS2L4 2 Package Information Epoxy meets UL94,V In order to meet environmental requirements, S offers these devices in ECOPACK packages. hese packages have a lead-free second level interconnect. he category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. he maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an S trademark. ECOPACK specifications are available at able 5. SMB dimensions Dimensions E1 Ref. Millimeters Inches Min. Max. Min. Max. D A A b E c A1 E C A2 E L b D L Figure 19. SMB footprint dimensions in millimeters (inches) Figure 2. Marking information (64) (.12) 1.62 (64) Cathode bar (unidirectional devices only ) 5.84 (.3) 2.18 (86) e3 x x x z y w w e3: ECOPACK (Leadfree) XXX: Marking Z: Manufacturing location Y: Year WW: week 6/1

7 SPS2L4 Package Information able 6. dimensions Dimensions Ref. Millimeters Inches E E1 D b A L L c L2 L1 Min. yp. Max. Min. yp. Max. A b (1) c (1) D E E L L1 16 L Applies to plated leads Figure 21. footprint dimensions optimized for (1) Figure 22. Marking information 5.84 (3) Cathode bar (unidirectional devices only ) 1.2 (47) 3.44 (.136) 1.2 (47) 2.7 (82) e3 x x x z y w w e3: ECOPACK (Leadfree) XXX: Marking Z: Manufacturing location Y: Year WW: week millimeters (inches) 1. SMB footprint may also be used. 7/1

8 Package Information SPS2L4 able 7. dimensions Dimensions Ref. Millimeters Inches D A c Min. yp. Max. Min. yp. Max. A L 2x L1 2x b c E E1 D b L L2 2x E E L L L Figure 23. footprint dimensions optimized for (1) Figure 24. Marking information 5.52 (17) Cathode bar (unidirectional devices only ) 1.2 (47) 3.12 (.123) millimeters (inches) 1.2 (47) 1.52 (6) e3 x x x z y w w e3: ECOPACK (Leadfree) XXX: Marking Z: Manufacturing location Y: Year WW: week 1. SMA footprint may also be used. 8/1

9 SPS2L4 Ordering Information 3 Ordering Information able 8. Ordering information Order code Marking Package Weight Base qty Delivery mode SPS2L4U GD4 SMB.17 g 25 ape and reel SPS2L4UF FGD4.5 g 5 ape and reel SPS2L4AF F2L4.35 g 1 ape and reel 4 Revision history able 9. Document revision history Date Revision Description of changes Jul-23 2A Last update. 31-Jan Sep-28 4 Reformatted to current standard. Added ECOPACK statement. Added package. Reformatted to current standard. Updated ECOPACK statement. Added package. 9/1

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