STPS61L60C. Power Schottky rectifier. Features. Description. High current capability Avalanche rated Low forward voltage drop current

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1 STPS61L6C Power Schottky rectifier Features High current capability Avalanche rated Low forward voltage drop current A1 A2 K High frequency operation K Description This dual center tap schottky rectifier is suited for high frequency switch mode power supplies. Packaged in TO-247 and TO-22AB, this device provides desktop SMPS designers with a low forward voltage drop device, and reduced leakage current, with the objective of making the application compliant with environmental care standards, or suitable for 8+ requirements. Table 1. Device summary I F(AV) 2 x 3 A V RRM 6 V T j (max) 15 C V F (typ).56 V Figure 1. A2 K A1 TO-247 STPS61L6CW V I V RRM V AR V R Electrical characteristics (a) 2 x I O I F I O I I R A2 A1 K TO-22AB STPS61L6CT "Forward" X X V VTo V F(Io) V F V F(2xIo) "Reverse" I AR a. V ARM and I ARM must respect the reverse safe operating area defined in Figure 12 V AR and I AR are pulse measurements (t p < 1 µs). V R, I R, V RRM and V F, are static characteristics June 21 Doc ID Rev 2 1/9 9

2 Characteristics STPS61L6C 1 Characteristics Table 2. Absolute ratings (limiting values per diode at 25 C unless otherwise specified) Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 6 V I F(RMS) Forward rms voltage 5 A I F(AV) Average forward current δ =.5 T c = 125 C T c = 12 C I FSM Surge non repetitive forward current t p = 1 ms sinusoidal Per diode Per device T-247 T-22AB P ARM Repetitive peak avalanche power t p = 1 µs Tj = 25 C 115 W V ARM (1) Maximum repetitive peak avalanche voltage t p < 1 µs T j < 15 C, I AR < 43 A 8 V V (1) Maximum single pulse peak ASM avalanche voltage t p < 1 µs T j < 15 C, I AR < 43 A 8 V T stg Storage temperature range -65 to C T j Maximum operating junction temperature (2) 15 C 1. Refer to Figure dptot 1 < condition to avoid thermal runaway for a diode on its own heatsink dtj Rth(j-a) Table 3. Thermal resistances Symbol Parameter Value Unit A A R th(j-c) Junction to case TO-247 TO-22AB Per diode Total Per diode Total C/W R th(c) Coupling TO TO-22AB.3 When the diodes 1 and 2 are used simultaneously : ΔTj(diode 1) = P(diode1) x R th(j-c) (Per diode) + P(diode 2) x R th(c). 2/9 Doc ID Rev 2

3 STPS61L6C Characteristics Table 4. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit I R (1) Reverse leakage current T j = 25 C V R = V RRM T j = 125 C ma T j = 25 C I F = 5 A T j = 125 C I F = 5 A V F (2) Forward voltage drop T j = 25 C I F = 15 A T j = 125 C I F = 15 A V T j = 25 C I F = 3 A T j = 125 C I F = 3 A Pulse test: t p = 5 ms, δ < 2% 2. Pulse test: t p = 38 µs, δ < 2% To evaluate the conduction losses use the following equation: P =.44 x I F(AV) +.6 x I F 2 (RMS) Figure 2. Average forward power dissipation vs. average forward current (per diode) Figure 3. Average forward current vs. ambient temperature (δ =.5, per diode) P F(av) (W) I F(av) (A) I F(av) (A) 5 δ=tp/t tp δ=tp/t tp δ=.5 δ=1 R th(j-a) =R th(j-c) δ=.2 3 δ=.1 TO-22AB TO δ= R th(j-a) =15 C/W 1 T T Tamb( C) Figure 4. Normalized avalanche power derating vs. pulse duration Figure 5. Normalized avalanche power derating vs. junction temperature P ARM(t p) P ARM(1µs) 1 P ARM(T j ) P ARM(25 C) t p(µs) T j( C) Doc ID Rev 2 3/9

4 Characteristics STPS61L6C Figure 6. Non repetitive surge peak forward current vs. overload duration (max. values, per diode, TO-247) Figure 7. Non repetitive surge peak forward current vs. overload duration (max. values, per diode, TO-22AB) 35 I (A) M 35 I (A) M T c =25 C 2 T c =25 C 15 T c =75 C 15 T c =75 C 1 5 T c =125 C IM t δ =.5 t(s) 1.E-3 1.E-2 1.E-1 1.E+ 1 5 T c =125 C IM t δ =.5 t(s) 1.E-3 1.E-2 1.E-1 1.E+ Figure 8. Relative variation of thermal impedance junction to case vs. pulse duration Figure 9. Reverse leakage current vs. reverse voltage applied (typical values, per diode) 1..9 Z th(j-c) /Rth(j-c) 1.E+3 I (ma) R T j =15 C.8 1.E+2 T j =125 C.7 T j =1 C E+1 T j =75 C.4 1.E+ T j =5 C.3 Single pulse T j =25 C.2.1. t (s) p 1.E-3 1.E-2 1.E-1 1.E+ 1.E-1 1.E-2 V (V) R Figure 1. Junction capacitance vs. reverse voltage applied (typical values, per diode) Figure 11. Forward voltage drop vs. forward current (per diode) 1 C(pF) F=1 MHz V osc =3 mv RMS T j =25 C 1 I FM(A) T J =125 C Maximum values T J =125 C Typical values T J =25 C Maximum values V (V) R FM V (V) 4/9 Doc ID Rev 2

5 STPS61L6C Characteristics Figure 12. Reverse safe operating area (t p < 1 µs and T j < 15 C) Iarm (A) Forbidden area Operating area 25 Varm (V) Doc ID Rev 2 5/9

6 Package information STPS61L6C 2 Package information Epoxy meets UL94, V Cooling method: conduction Torque value: TO N m recommended, 1. N m maximum TO-22AB -.4 to.6 N m In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. Table 5. TO-247 dimensions Dimensions Ref. Millimeters Inches Min. Max. Min. Max. A A b D S E R L2 A Heat-sink plane P b b c D (1) L1 E L b1 b b c A1 BACK VIEW e e 5.45 typ..215 typ. L L L typ..728 typ. P (2) R S 5.5 typ..216 typ. 1. Dimension D plus gate protrusion does not exceed 2.5 mm 2. Resin thickness around the mounting hole is not less than.9 mm 6/9 Doc ID Rev 2

7 STPS61L6C Package information Table 6. TO-22AB dimensions Dimensions Ref. Millimeters Inches Min. Max. Min. Max. A H2 Dia L5 A C L7 C D E F L2 F2 L6 F F G F1 L9 D G F L4 H L typ..645 typ. G1 G M E L L L L L M 2.6 typ..12 typ. Diam Doc ID Rev 2 7/9

8 Ordering information STPS61L6C 3 Ordering information Table 7. Ordering information Order code Marking Package Weight Base qty Delivery mode STPS61L6CW STPS61L6CW TO g 3 Tube STPS61L6CT STPS61L6CT TO-22AB 2.23 g 3 Tube 4 Revision history Table 8. Document revision history Date Revision Changes 18-May-29 1 Initial release. 29-Jun-21 2 Added Figure 1 and Figure 12. Added parameters V ARM and V ASM to Table 2. Updated Table 5. 8/9 Doc ID Rev 2

9 STPS61L6C Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. 21 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America Doc ID Rev 2 9/9

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