T610H. High temperature 6 A sensitive TRIACs. Features. Applications. Description. Medium current TRIAC
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1 T6H High temperature 6 A sensitive TRIACs Features Medium current TRIAC A Logic level sensitive TRIAC C max. T j turn-off commutation G Clip bounding A RoHS (/9/EC) compliant package Applications A The T6H is designed for the control of AC actuators in appliances and industrial systems. The multi-port drive of the microcontroller can control the multiple loads of such appliances and systems through this sensitive gate TRIAC. Description A A TO-AB T6H-6T G Specifically designed to operate at C, the new 6 A T6H TRIAC provides an enhanced performance in terms of power loss and thermal dissipation. This allows the optimization of the heatsink size, leading to space and cost effectiveness when compared to electromechanical solutions. Based on ST logic level technology, the T6H offers an I GT lower than ma and specified minimal commutation and high noise immunity levels valid up to the T j max. Table. Device summary Symbol Value Unit I T(RMS) 6 A V DRM /V RRM 6 V I GT MAX ma May 9 Doc ID 7 Rev /9 9
2 Characteristics T6H Characteristics Table. Absolute maximum ratings Symbol Parameter Value Unit I T(RMS) On-state rms current (full sine wave) T c = 8 C 6 A I TSM Non repetitive surge peak on-state current (full cycle, T j initial = C) F = 6 Hz t = 6.7 ms 6 F = Hz t = ms 6 I ² t I ² t Value for fusing t p = ms A ² s di/dt V DSM /V RSM Critical rate of rise of on-state current I G = x I GT, t r ns Non repetitive surge peak off-state voltage F = Hz T j = C A/µs t p = ms T j = C V DRM /V RRM + I GM Peak gate current t p = µs T j = C A P G(AV) Average gate power dissipation T j = C W T stg T j Table. Storage junction temperature range Operating junction temperature range Electrical characteristics (T j = C, unless otherwise specified) - to + - to + Symbol Test conditions Quadrant Min. Max. Unit I GT I - II - III ma V D = V R L = Ω V GT I - II - III. V V GD V D = V DRM, R L =. kω I - II - III. V () I H I T = ma ma I - III I L I G =. I GT ma II dv/dt () V D = 67% V DRM, gate open, T j = C 7 V/µs (di/dt)c () Logic level,. V/µs, T j = C 8.7 A/ms Logic level, V/µs, T j = C.. For both polarities of A referenced to A. A V C /9 Doc ID 7 Rev
3 T6H Characteristics Table. Static characteristics Symbol Test conditions Value Unit V () T I TM = 8. A, t p = 8 µs T j = C MAX.. V V () t Threshold voltage T j = C MAX..8 V R () d Dynamic resistance T j = C MAX. 6 mω I DRM I RRM V DRM = V RRM T j = C MAX..7 T j = C MAX. µa V D /V R = V (at peak mains voltage) T j = C MAX.. V D /V R = V (at peak mains voltage) T j = C MAX..8 ma. for both polarities of A referenced to A. Table. Thermal resistance Symbol Parameter Value Unit R th(j-c) Junction to case (AC).8 R th(j-a) Junction to ambient 6 C/W Figure. Maximum power dissipation versus on-state rms current (full cycle) Figure. On-state rms current versus case temperature (full cycle) 7 P(W) 7 I T(RMS) (A) 6 6 I T(RMS) (A) 6 T C ( C) 7 Figure. On-state rms current versus ambient temperature (free air convection, full cycle) Figure. Relative variation of thermal impedance, versus pulse duration. I T(RMS) (A).E+ K=[Zth/Rth]. Zth(j-c)..E-. Zth(j-a)..E-. T a ( C). 7 tp(s).e-.e-.e-.e-.e+.e+.e+.e+ Doc ID 7 Rev /9
4 Characteristics T6H Figure. Relative variation of gate trigger current and voltage versus junction temperature (typical values) Figure 6. Relative variation of holding and latching current versus junction temperature (typical values). I GT,V GT [T j ]/I GT,V GT [T j = C] IGT Q. I H,I L [T j ]/I H,I L [T j = C]. IGTQ-Q.... VGT Q- Q -Q IL. T j ( C) IH T j ( C) Figure 7. Surge peak on-state current versus number of cycles Figure 8. Non-repetitive surge peak on-state current and corresponding value of I t 6 6 I TSM (A) Repetitive T C =8 C Non repetitive T j initial= C Number of cycles t=ms One cycle I TSM (A), I²t (A²s) di/dt limitation: A/µs T j initial= C I TSM I²t Sinusoidal pulse width t p < ms t P (ms).... Figure 9. On-state characteristics (maximum values) Figure. Relative variation of critical rate of decrease of main current versus junction temperature I TM (A) T j max : V to =.8 V R d = 6 mω 9 (di/dt) C [T j ]/(di/dt) c [T j = C] 8 7 T j = C 6 T j = C VTM (V) T j ( C) 7 /9 Doc ID 7 Rev
5 T6H Characteristics Figure. Relative variation of critical rate of decrease of main current versus reapplied dv/dt (typical values) Figure. Relative variation of static dv/dt immunity versus junction temperature (di/dt) c [(dv/dt) c ] / Specified (di/dt) c (dv/dt) C (V/µs) dv/dt [T j ]/dv/dt[t j = C] T j( C) V D =V R = V 7 Figure. Variation of leakage current versus junction temperature for different values of blocking voltage Figure. Acceptable case to ambient thermal resistance versus repetitive peak off-state voltage.e+.e-.e-.e-.e- I DRM/I RRM [Tj;V DRM/V RRM]/I DRM/I RRM [Tj= C; 6V] V DRM =V RRM = V V DRM =V RRM = V V DRM =V RRM =6 V T j ( C) R th(c-a) ( C/W) V AC PEAK(V) R th(j-c) =.8 C/W T J = C 6 Doc ID 7 Rev /9
6 Ordering information scheme T6H Ordering information scheme Figure. Ordering information scheme T 6 H - 6 T Triac series Current 6 = 6 A Sensitivity = ma High temperature Voltage 6 = 6 V Package T = TO-AB 6/9 Doc ID 7 Rev
7 T6H Package information Package information Epoxy meets UL9, V Recommended torque. to.6 N m In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. Table 6. TO-AB dimensions Ref. Millimeters Dimensions Inches Min. Typ. Max. Min. Typ. Max. A a.7.7 B C a.... Ø I b B L F b A b...8. I l l a a c C c c e e b M c F ØI I L l l M.6. Doc ID 7 Rev 7/9
8 Ordering information T6H Ordering information Table 7. Ordering information Order code Marking Package Weight Base qty Delivery mode T6H-6T T6H 6T TO-AB. g Tube Revision history Table 8. Document revision history Date Revision Changes -May-9 First issue. 8/9 Doc ID 7 Rev
9 T6H Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. 9 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America Doc ID 7 Rev 9/9
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