STPS40H100CW. 100 V power Schottky rectifier. Datasheet. Features. Applications. Description

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1 Datasheet 100 V power Schottky rectifier A1 A2 TO-247 K A2 K A1 Features Negligible switching losses Low leakage current Good trade-off between leakage current and forward voltage drop Low thermal resistance Avalanche specification ECOPACK 2 compliant Applications Switching diode SMPS DC/DC converter LED lighting Desktop power supply Description This dual diode common cathode Schottky rectifier is suited for switch mode power supply and high frequency DC to DC converters. Product status link Packaged in TO-247, the STPS40H100CW is optimized for use in high frequency inverters. STPS40H100CW Product summary Symbol I F(AV) V RRM Value 2 x 20 A 100 V T j 175 C V F (typ.) 0.58 V DS Rev 6 - July 2018 For further information contact your local STMicroelectronics sales office.

2 Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values, per diode, at 25 C, unless otherwise specified) Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 100 V I F(RMS) Forward rms current 30 A I F(AV) Average forward current, δ = 0.5 square wave T c = 160 C Per diode 20 Per device 40 A I FSM Surge non repetitive forward current t p = 10 ms sinusoidal 300 A P ARM Repetitive peak avalanche power t p = 10 µs, T j = 125 C 1900 W T stg Storage temperature range -65 to +175 C T j Maximum operating junction temperature range (1) +175 C 1. (dp tot /dt j ) < (1/R th(j-a) ) condition to avoid thermal runaway for a diode on its own heatsink. Table 2. Thermal resistance parameters Symbol Parameter Max. value Unit R th(j-c) Junction to case Per diode 0.9 Total 0.50 C/W R th(c) Coupling 0.1 When the diodes 1 and 2 are used simultaneously : ΔT j (diode 1) = P(diode1) x R th(j-c) (per diode) + P(diode 2) x R th(c) For more information, please refer to the following application note: AN5088 : Rectifiers thermal management, handling and mounting recommendations Table 3. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit I R (1) Reverse leakage current T j = 25 C - 10 µa V R = V RRM T j = 125 C ma V F (2) Forward voltage drop T j = 25 C I F = 20 A T j = 125 C T j = 25 C I F = 40 A T j = 125 C V 1. Pulse test: t p = 5 ms, δ < 2% 2. Pulse test: t p = 380 µs, δ < 2% To evaluate the conduction losses, use the following equation: P = 0.5 x I F(AV) x I 2 F (RMS) For more information, please refer to the following application notes related to the power losses : AN604: Calculation of conduction losses in a power rectifier AN4021: Calculation of reverse losses on a power diode DS Rev 6 page 2/9

3 Characteristics (curves) 1.1 Characteristics (curves) Figure 1. Average forward power dissipation versus average forward current (per diode) 16 P F(AV)(W) δ = 0.05 δ= 0.1 δ= 0. 2 δ= 0.5 δ= 1 2 I F(AV) (A) δ=tp/t tp T Figure 2. Average forward current versus ambient temperature (δ = 0.5, per diode) I F(AV) (A) R th(j-a)= R th(j-c) R th(j-a)=15 C/W T δ=tp/t tp T amb( C) Figure 3. Normalized avalanche power derating versus pulse duration (T j = 125 C) Figure 4. Relative variation of thermal impedance junction to case versus pulse duration 1 P ARM(tp) P (10 µs) ARM Z th(j-c) / Rth(j-c) t p(µs) Single pulse t (s) p E -3 1E -2 1E -1 1E +0 DS Rev 6 page 3/9

4 Characteristics (curves) Figure 5. Reverse leakage current versus reverse voltage applied (typical values, per diode) Figure 6. Junction capacitance versus reverse voltage applied (typical values, per diode) I R (ma) 1E+1 T j =125 C C(nF) 3.0 F=1 MHz 1E+0 T j =100 C V OSC=30 mv RMS T j=25 C 1E-1 T j =75 C 1.0 1E-2 1E-3 T j =25 C V R (V) 1E V R(V) Figure 7. Forward voltage drop versus forward current (per diode) 200 I F (A) 100 T j =125 C Maximum values T j =125 C Typical values 10 T j =25 C Maximum values 1 V (V) F DS Rev 6 page 4/9

5 Package information 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. 2.1 TO-247 package information Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque value: 0.8 N m Maximum torque value: 1.0 N m Figure 8. TO-247 package outline E A Heat-sink plane P S R D L2 L1 L b1 b b c A1 Back view e DS Rev 6 page 5/9

6 TO-247 package information Table 4. TO-247 package mechanical data Dimensions Ref. Millimeters Inches (for reference only) Min. Typ. Max. Min. Typ. Max. A A b b b c D E e L L L ØP ØR S DS Rev 6 page 6/9

7 Ordering information 3 Ordering information Table 5. Ordering information Order code Marking Package Weight Base qty. Delivery mode STPS40H100CW STPS40H100CW TO g 30 Tube DS Rev 6 page 7/9

8 Revision history Table 6. Document revision history Date Version Changes Jul D Previous release. 16-Jan Updated package graphic to clarify lead length. 03-Jul Updated Table 1. Absolute ratings (limiting values, per diode, at 25 C, unless otherwise specified) and Figure 3. Normalized avalanche power derating versus pulse duration (T j = 125 C). DS Rev 6 page 8/9

9 IMPORTANT NOTICE PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document STMicroelectronics All rights reserved DS Rev 6 page 9/9