STPS20H100C. 100 V power Schottky rectifier. Datasheet. Features. Description
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1 Datasheet 100 V power Schottky rectifier K A1 A2 A1 K A2 TO-220AB K A1 KA2 TO-220FPAB Features Negligible switching losses High junction temperature capability Low leakage current Good trade off between leakage current and forward voltage drop Avalanche rated Insulated package: TO-220FPAB Insulating voltage = 2000 V RMS sine ECOPACK 2 compliant component for D²PAK on demand K Description Dual center tap Schottky rectifier designed for high frequency miniature switch mode power supplies such as adaptors and on-board DC-DC converters. I 2 PAK A1 KA2 K K A2 A1 D 2 PAK A2 A1 Product status link STPS20H100C Product summary I F(AV) V RRM 2 x 10 A 100 V T j (max) 175 C V F (typ) 0.59 V DS Rev 9 - April 2018 For further information contact your local STMicroelectronics sales office.
2 Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values, per diode, at 25 C, unless otherwise specified) Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 100 V I F(RMS) Forward rms current 30 A I F(AV) Average forward current δ = 0.5, square wave Per diode 10 TO-220AB, D 2 PAK, I 2 PAK T C = 160 C Per device 20 T C = 145 C Per diode 10 TO-220FPAB T C = 125 C Per device 20 A I FSM Surge non repetitive forward current tp = 10 ms sinusoidal 250 A P ARM Repetitive peak avalanche power tp = 10 µs, T j = 125 C 775 W T stg Storage temperature range -65 to C T j Maximum operating junction temperature (1) C 1. (dp tot /dt j ) < (1/R th(j-a) ) condition to avoid thermal runaway for a diode on its own heatsink. Table 2. Thermal resistance parameter Symbol Parameter Value Unit R th(j-c) Junction to case TO-220AB, D 2 PAK, I 2 PAK 1.6 Per diode TO-220FPAB 4 TO-220AB, D 2 PAK, I 2 PAK 0.9 Total TO-220FPAB 3.2 C/W R th(c) Coupling TO-220AB, D 2 PAK, I 2 PAK TO-220FPAB 2.5 C/W When the diodes 1 and 2 are used simultaneously : ΔTj(diode 1) = P(diode1) x R th(j-c) (Per diode) + P(diode 2) x R th(c) DS Rev 9 page 2/18
3 Characteristics Table 3. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit I R (1) Reverse leakage current T j = 25 C µa V R = V RRM T j = 125 C ma I F = 8 A T j = 25 C I F = 10 A I F = 16 A V F (2) Forward voltage drop I F = 20 A I F = 8 A V T j = 125 C I F = 10 A I F = 16 A I F = 20 A Pulse test: t p = 5 ms, δ < 2% 2. Pulse test: t p = 380 µs, δ < 2% To evaluate the conduction losses use the following equation: P = 0.55 x I F(AV) I 2 F (RMS) DS Rev 9 page 3/18
4 Characteristics (curves) 1.2 Characteristics (curves) Figure 1. Average forward power dissipation versus average forward current (per diode) Figure 2. Average forward current versus ambient temperature (δ= 0.5, per diode) 8 6 P F(AV) (W) δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 δ = 1 I F(AV) (A) R th(j-a) =15 C/W R th(j-a) =Rth(j-c) TO-220FPAB TO-220AB 4 6 R th(j-a) =40 C/W T 2 I F(AV) (A) δ=tp/t tp T 2 δ=tp/t tp T amb( C) Figure 3. Normalized avalanche power derating versus pulse (T j = 125 C) Figure 4. Relative variation of thermal impedance junction to case versus pulse duration (per diode) 1 P ARM(tp) P (10 µs) ARM 1.0 Z th(j-c) /Rth(j-c) 2 2 TO-220AB, D PAK, I PAK t p(µs) Single pulse t p(s) 0.0 1E-3 1E-2 1E-1 1E+0 Figure 5. Relative variation of thermal impedance junction to case versus pulse duration (per diode) Figure 6. Reverse leakage current versus reverse voltage applied (typical values, per diode) 1.0 Z th(j-c) /Rth(j-c) TO-220FPAB 1E+4 I (µa) R Single pulse t p(s) 0.0 1E-2 1E-1 1E+0 1E+1 1E+3 1E+2 1E+1 1E+0 1E-1 1E-2 T j=150 C T j=125 C T j=100 C T j=25 C V (V) R DS Rev 9 page 4/18
5 Characteristics (curves) Figure 7. Junction capacitance versus reverse voltage applied (typical values, per diode) Figure 8. Forward voltage drop versus forward current (maximum values, per diode) 1000 C(pF) F=1MHz V OSC=30mVRMS T j=25 C I FM(A) T j=150 C (typical values) T j=125 C (typical values) T j=125 C T j=25 C 100 V (V) R V FM(V) Figure 9. Thermal resistance junction to ambient versus copper surface under tab (epoxy printed board FR4, e Cu = 35 µm) (D²PAK) 80 Rth(j-a)( C/W) SCu(cm²) DS Rev 9 page 5/18
6 Package information 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. DS Rev 9 page 6/18
7 D²PAK package information 2.1 D²PAK package information Cooling method: by conduction (C) Epoxy meets UL 94,V0 Figure 10. D²PAK package outline DS Rev 9 page 7/18
8 D²PAK package information Ref. Table 4. D²PAK package mechanical data Millimeters Dimensions Inches Min. Max. Min. Max. A A b b c c D D D E E E e 2.54 typ e H J L L L R 0.4 typ V DS Rev 9 page 8/18
9 D²PAK package information Figure 11. D²PAK Recommended footprint DS Rev 9 page 9/18
10 I²PAK package information 2.2 I²PAK package information Cooling method: by conduction (C) Epoxy meets UL 94,V0 Figure 12. I²PAK package outline DS Rev 9 page 10/18
11 I²PAK package information Ref. Table 5. I²PAK package mechanical data Millimeters Dimensions Inches Min. Max. Min. Max. A A b b c c D e e E L L L DS Rev 9 page 11/18
12 TO-220AB package information 2.3 TO-220AB package information Cooling method: by conduction (C) Epoxy meets UL 94,V0 Recommended torque value: 0.55 N m Maximum torque value: 0.7 N m Figure 13. TO-220AB package outline DS Rev 9 page 12/18
13 TO-220AB package information Ref. Table 6. TO-220AB package mechanical data Millimeters Dimensions Inches Min. Max. Min. Max. A b b c D D typ typ. E e e F H J L L L typ typ. L typ typ. θp Q DS Rev 9 page 13/18
14 TO-220FPAB package information 2.4 TO-220FPAB package information Cooling method: by conduction (C) Epoxy meets UL 94,V0 Recommended torque value: 0.55 N m Maximum torque value: 0.7 N m Figure 14. TO-220FPAB package outline A H B Dia. L6 L7 L2 L3 F1 F2 L4 D F G1 E G DS Rev 9 page 14/18
15 TO-220FPAB package information Table 7. TO-220FPAB package mechanical data Dimensions Ref. Millimeters Inches (for reference only) Min. Max. Min. Max. A B D E F F F G G H L typ typ. L L L L L Dia DS Rev 9 page 15/18
16 Ordering information 3 Ordering information Table 8. Ordering information Order code Marking Package Weight Base qty Delivery mode STPS20H100CT STPS20H100CT TO-220AB 1.95 g 50 Tube STPS20H100CFP STPS20H100CFP TO-220FPAB 1.90 g 50 Tube STPS20H100CR STPS20H100CR I 2 PAK 1.50 g 50 Tube STPS20H100CG STPS20H100CG D 2 PAK 1.38 g 50 Tube STPS20H100CG-TR STPS20H100CG D 2 PAK 1.38 g 1000 Tape and reel DS Rev 9 page 16/18
17 Revision history Table 9. Document revision history Date Revision Changes Jul G Previous release 21-Mar Removed ISOWATT package 10-Sep Reformatted cover page to current standards - no technical changes. Updated dimensions A1, b, b1, c, c2, L, and L1 in Table Sep Updated Table 8 21-May Updated features, and packages silhouette in cover page. Updated Section 1: "Characteristics" and Section 1.1: "Characteristics (curves)". Updated Section 2.2: "D²PAK package information". 16-Apr Updated Table 5. I²PAK package mechanical data. DS Rev 9 page 17/18
18 IMPORTANT NOTICE PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document STMicroelectronics All rights reserved DS Rev 9 page 18/18
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