STTH2003CG. Hight frequency secondary rectifier. Main product characteristics. Features and benefits. Description. Order codes.
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1 Hight frequency secondary rectifier Main product characteristics I F(AV) V RRM T j (max) V F (max) t rr (typ) Features and benefits Combines highest recovery and reverse voltage performance Ultra-fast, soft and noise-free recovery Insulated packages: TO-22FPAB Electric insulation: 2 V DC Capacitance: 12 pf Description 2 x A 3 V 17 C 1 V 35 ns Dual center tap Fast Recovery Epitaxial Diodes suited for Switch Mode Power Supply and high frequency DC/DC converters. Packaged in TO-22AB, TO-22FPAB, I 2 PAK or D 2 PAK, this device is especially intended for secondary rectification. A1 A2 A2 A1 K TO-22FPAB STTH23CFP Order codes Part Number STTH23CT STTH23CG STTH23CG-TR STTH23CF STTH23CFP STTH23CR A1 K A2 TO-22AB STTH23CT K K A2 A1 D 2 PAK STTH23CG I 2 PAK STTH23CR Marking A1 K A2 STTH23CT STTH23CG STTH23CG STTH23CF STTH23CFP STTH23CR March 27 Rev 8 1/
2 Characteristics STTH23C 1 Characteristics Table 1. Absolute ratings (limiting values, per diode) Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 3 V I F(RMS) RMS forward voltage 3 A I F(peak) Peak working forward current δ =.5 I 2 PAK, D 2 PAK, TO-22AB T c = 14 C TO-22FPAB T c = 125 C Per diode Per device I FSM Surge non repetitive forward current t p = ms sinusoidal 1 A I RSM Non repetitive avalanche current t p = µs square 5 A T stg Storage temperature range -65 to C Table 2. T j Maximum operating junction temperature 175 C Thermal resistance Symbol Parameter Value (max) Unit 2 A R th(j-c) Junction to case I 2 PAK, D 2 PAK, TO-22AB Per diode 2.5 Total 1.3 TO-22FPAB Per diode 4.6 Total 4 R th(c) TO-22FPAB Coupling 3.5 I 2 PAK, D 2 PAK, TO-22AB Coupling.1 C/W Table 3. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ Max. Unit I R (1) Reverse leakage current T j = 25 C 2 V R = 3 V T j = 125 C 3 3 µa V F (2) Forward voltage drop T j = 25 C 1.25 I F = A T j = 125 C.85 1 V 1. Pulse test: t p = 5 ms, δ < 2 % 2. Pulse test: t p = 38 µs, δ < 2 % Note: To evaluate the conduction losses use the following equation: P =.75 x I F(AV) +.25 I F 2 (RMS)) 2/11
3 Characteristics Table 4. Recovery Characteristics Symbol Parameter Test conditions Min. Typ Max. Unit t rr Reverse recovery time T j = 25 C I F =.5 A I rr =.25 A 25 I R = 1 A I F = 1 A V R = 3 V 35 di F /dt = -5 A/µs ns t fr Forward recovery time T j = 25 C I F = A di F /dt = A/µs V FR = 1.1 x V Fmax 23 ns V FP Peak forward voltage T j = 25 C I F = A di F /dt = A/µs 3.5 V I RM Reverse recovery current T j = 125 C I F = A V CC = 2V 8 A S di F /dt = 2 A/µs factor Softness factor.3-3/11
4 Characteristics STTH23C Figure 1. Conduction losses versus average forward current (per diode) Figure 2. Forward voltage drop versus forward current (maximum values, per diode) P1(W) δ =.5 δ =.1 δ =.2 δ =.5 2 I FM(A) 8 δ = 1 T j=25 C 6 T j=75 C 4 T 2 I F(AV) (A) δ=tp/t tp V FM(V) Figure Z th(j-c) /Rth(j-c) Relative variation of thermal impedance junction to case versus pulse duration (TO-22AB / D 2 PAK / I 2 PAK) Figure Z th(j-c) /Rth(j-c) Relative variation of thermal impedance junction to case versus pulse duration (TO-22FPAB) δ =.5.6 δ =.5.4 δ =.2 δ =.1.2 Single pulse t p(s) δ=tp/t tp. 1E-3 1E-2 1E-1 1E+ T.4.2. δ =.2 δ =.1 Single pulse t (s) p δ=tp/t 1E-2 1E-1 1E+ 1E+1 T tp Figure 5. Peak reverse recovery current versus di F /dt (9% confidence, per diode) Figure 6. Reverse recovery time versus di F /dt (9% confidence, per diode) 16 I RM(A) t (ns) rr V R=2V I=I F F(AV) I F=2 x IF(AV) 8 I=I F F(AV) V R=2V 8 I F=.5 x IF(AV) 6 I F=2 x IF(AV) I F=.5 x IF(AV) di F/dt(A/µs) di F/dt(A/µs) /11
5 Characteristics Figure 7. Softness factor (tb/ta) versus di F /dt (typical values, per diode) Figure 8. Relative variation of dynamic parameters versus junction temperature (reference: T j = 125 C) S factor di /dt(a/µs) F V R=2V S factor IRM T j( C) Figure 9. Transient peak forward voltage versus di F /dt (9% confidence, per diode) (TO-22AB) Figure. Forward recovery time versus di F /dt (9% confidence, per diode) 8 V FP(V) I=I F F(AV) 5 4 t (ns) fr I=I F F(AV) V FR=1.1 x VF max di F/dt(A/µs) di F/dt(A/µs) Figure R th(j-a) ( C/W) Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35 µm) (D 2 PAK). S(Cu)(cm²) /11
6 Package information STTH23C 2 Package information Epoxy meets UL94, V Cooling method: by conduction (C) Recommended torque value:.55 Nm Maximum torque value:.7 Nm Table 5. I 2 PAK dimensions Ref. Millimeters Dimensions Inches Min. Max. Min. Max. A A E c2 A L2 b b D c c L1 A1 D L b1 e e E e e1 b c L L L /11
7 Package information Table 6. D 2 PAK dimensions Dimensions Ref. Millimeters Inches Min. Typ. Max. Min. Typ. Max. A L2 E C2 A A A B L D B L3 B2 B A1 C R C C D G E mm min. FLAT ZONE A2 G L V2 L L R.4.16 V2 8 8 Figure 12. Footprint (dimensions in millimeters) /11
8 Package information STTH23C Table 7. TO-22AB dimensions Dimensions Ref. Millimeters Inches Min. Max. Min. Max. A H2 Dia L5 A C L7 C D E F L2 F2 L6 F F G F1 L9 D G F L4 H L typ..645 typ. G1 G M E L L L L L M 2.6 typ..2 typ. Diam /11
9 Package information Table 8. TO-22FPAB dimensions Dimensions Ref. Millimeters Inches Min. Max. Min. Max. A H A B B D E Dia F L6 F L2 L7 F L3 G L4 F1 F2 L5 D G H L2 16 Typ..63 Typ. G1 F E L L G L L L Dia In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: 9/11
10 Ordering information STTH23C 3 Ordering information Part Number Marking Package Weight Base qty Delivery mode STTH23CT STTH23CT TO-22AB 2.2 g 5 Tube STTH23CG STTH23CG D 2 PAK 1.48 g 5 Tube STTH23CG-TR STTH23CG D 2 PAK 1.48 g 5 Tape & reel STTH23CFP STTH23CFP TO-22AB 2.8 g 5 Tube STTH23CR STTH23CR I 2 PAK 1.49 g 5 Tube 4 Revision history Date Revision Description of Changes Aug-23 7D Last release. 26-Mar-27 8 Removed ISOWATT package. /11
11 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. 27 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 11/11
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