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1 Snubberless high temperature 20 A Triacs Main features Symbol Value Unit I T(RMS) 20 A V DRM /V RRM 600 V I GT (Q1) 35 ma T j MAX 150 C Description Specifically designed to operate at 150 C, the new 20 A T2035H Triacs provide an enhanced performance in terms of power loss and thermal dissipation. This facilitates the optimization of heatsink dimensioning, leading to improved space and cost effectiveness when compared to electromechanical solutions. Based on ST Snubberless technology, the T2035H series offers high commutation switching capabilities and high noise immunity levels on the full range of T j. The T2035H series facilitates the optimization of the control of universal motors and inductive loads found in appliances such as vacuum cleaners, and washing machines. The T2035H Triacs are also suitable for use in high temperature environment found in hot appliances such as cookers, ovens, hobs, electric heaters, and coffee machines. A1 Order code G D 2 PAK T2035H-G Part number T2035H-600G T2035H-600G-TR T2035H-600TRG T2035H-600IRG G A1 TO-220AB T2035H-T Marking A1 T2035H-600G T2035H-600G T2035H-600T T2035H-600I G TO-220AB Insulated T2035H-I TM: Snubberless is a trademark of STMicroelectronics September 2006 Rev 2 1/

2 Characteristics T2035H Series 1 Characteristics Table 1. Absolute maximum ratings Symbol Parameter Value Unit I T(RMS) I TSM RMS on-state current (full sine wave) Non repetitive surge peak on-state current (full cycle sine wave, T j initial = 25 C) D 2 PAK TO-220AB TO-220AB Ins T c = 127 C T c = 5 C F = 60 Hz t = 16.7 ms 2 F = 50 Hz t = 20 ms A I²t I²t Value for fusing tp = ms 283 A 2 s di/dt Critical rate of rise of on-state current I G = 2xI GT, tr 0 ns F = 120 Hz T j = 125 C 50 A/µs V DSM /V RSM Non repetitive surge peak off state voltage T j = 25 C 700 V I GM Peak gate current t p = 20 µs T j = 150 C 4 A P G(AV) Average gate power dissipation T j = 150 C 1 W T stg Storage junction temperature range -40 to +150 C T j Operating junction temperature range -30 to +150 T I Maximum leads soldering temperature during s 260 C Table 2. Electrical characteristics (T j = 25 C, unless otherwise specified) Symbol Test conditions Quadrant Value Unit I (1) GT I - II - III MAX 35 ma V D = 12 V, R L = 33 Ω V GT I - II - III MAX 1.3 V V GD V D = V DRM, R L =3.3 kω, T j = 150 C I - II - III MIN 0.15 V I H (2) I T = 0 ma MAX 35 ma I - III 50 ma I L I G = 1.2 x I GT MAX II 80 dv/dt (2) V D = 67% V DRM, gate open, T j = 150 C MIN 300 V/µs (di/dt)c (2) Without snubber, T j = 150 C MIN 8.9 A/ms 1. minimum I GT is guaranteed at 5% of I GT max 2. for both polarities of referenced to A1 A 2/

3 Characteristics Table 3. Static electrical characteristics Symbol Test conditions Value Unit V (1) TM I TM = 28 A, t p = 380 µs Tj = 25 C MAX 1.5 V V (1) TO Tj = 150 C MAX 0.80 V R (1) D Tj = 150 C MAX 21 mω I DRM I RRM V DRM = V RRM Tj = 25 C Tj = 150 C MAX 7.4 V D /V R = 400 V (at peak mains voltage) Tj = 150 C for both polarities of referenced to A1 Table 4. Thermal resistance 5 µa Symbol Parameter Value Unit R th (j-c) R th (j-a) Figure P(W) α=180 Junction to case for full (AC) Junction to ambient Maximum power dissipation vs RMS on-state current (full cycle) I T(RMS)(A) D 2 PAK TO-220AB TO-220AB Ins 1.9 S = 1 cm² D 2 PAK 45 Figure 2. TO-220AB TO-220AB Ins I T(RMS) (A) α= ma C/W RMS on-state current versus case temperature T C( C) TO-220AB Ins TO-220AB/D2PAK /

4 Characteristics T2035H Series Figure 3. RMS on-state current vs ambient temperature (epoxy printed circuit board FR4 e cu = 35 µm) Figure 4. Relative variation of thermal impedance vs pulse duration I T(RMS) (A) α=180 S CU =1cm² 1.E+00 K=[Z th /R th ] Z th(j-c) E-01 Z th(j-a) T amb( C) Figure 5. 0 I TM(A) On-state characteristics (maximum values) T j =150 C T j =25 C VTM(V) T j max. : V T0 = 0.80 V R D = 21 mw Figure E-02 t P(s) 1.E-03 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 Figure 6. Surge peak on-state current vs number of cycles 00 Non repetitive surge peak on-state current (sinusoidal pulse width tp< ms) and value of I²t I TSM (A), I²t (A²s) di/dt limitation: 50A/µs Tj initial=25 C I TSM I²t I TSM (A) Figure 8. Repetitive T c =127 C Non repetitive T j initial=25 C Number of cycles t=20ms One cycle Relative variation of gate trigger current, holding current and latching current vs junction temperature (typical values) I GT,I H,I L [T j ]/I GT,I H,I L [T j =25 C] I H & I L I GT 0 t P(ms) T j( C) /

5 Characteristics Figure 9. Relative variation of critical rate of decrease of main current (di/dt)c vs reapplied (dv/dt)c Figure. Relative variation of critical rate of decrease of main current (di/dt)c versus junction temperature (di/dt) c [(dv/dt) c ] / Specified (di/dt) c dv/dt (V/µs) Figure 11. Leakage current versus junction temperature for different values of blocking voltage (typical values) 1.E+01 1.E+00 1.E-01 1.E-02 1.E-03 1.E-04 Figure 13. D 2 PAK junction to ambient thermal resistance versus copper surface under tab (PCB FR4, copper thickness 35 µm) I DRM /I RRM (ma) (di/dt) c [T j ]/(di/dt) c [T j =125 C] V DRM =V RRM =200 V V DRM =V RRM =400 V V DRM =V RRM =600 V T j( C) T j( C) Figure 12. Acceptable repetitive peak off-state voltage versus case-ambient thermal resistance R th(c-a) ( C/W) R th(j-c) =1.9 C/W (Insulated) R th(j-c) =1 C/W (Non insulated) V DRM /V RRM (V) T J =150 C R th(j-a) ( C/W) D²PAK 20 S CU(cm²) /

6 Ordering information scheme T2035H Series 2 Ordering information scheme T H T (-TR) Triac series Current 20 = 20 A Sensitivity 35 = 35 ma High temperature Voltage 600 = 600 V Package G = D2PAK T = TO-220AB I = TO-220AB Insulated Packing mode Blank = Tube (D2PAK) -TR = Tape and reel ( D2PAK) RG = Tube (TO-220AB) 6/

7 Package information 3 Package information Table 5. TO-220AB and TO-220AB Insulated dimensions DIMENSIONS REF. Millimeters Inches Min. Typ. Max. Min. Typ. Max. A I4 l3 l2 e B Ø I b1 a1 L A a2 b2 a a B b b C c c e F ØI I L l l M c2 M C c1 F 7/

8 Package information T2035H Series Table 6. D 2 PAK dimensions DIMENSIONS REF. Millimeters Inches Min. Max. Min. Max. A L L2 L3 Figure 14. E G B2 B D 2 PAK Footprint.30 A1 C2 2mm min. FLAT ZONE C A A B B C C D E G L L L M R 0.40 typ typ. V R V D In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: All dimensions in mm 8/

9 Ordering information 4 Ordering information Part number Marking Package Weight Base Qty Packing mode T2035H-600G T2035H-600G D 2 PAK 1.5 g 50 Tube T2035H-600G-TR T2035H-600G D 2 PAK 1.5 g 00 Tape and Reel T2035H-600TRG T2035H-600T TO-220AB 2.3 g 50 Tube T2035H-600IRG T2035H-600I TO-220ABIns 2.3 g 50 Tube 5 Revision history Date Revision Changes 13-Jul Initial release. 7-Sep Added TO-220AB Insulated package. 9/

10 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America /

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