STTH806DTI. Tandem 600 V hyperfast boost diode. Features and benefits. Description. Main product characteristics. Insulated TO-220AC
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1 STTH86DTI Tandem 6 V hyperfast boost diode Table 1. I (AV) V RRM T j (max) V (max) I RM (typ.) t rr (typ.) Main product characteristics eatures and benefits 8 A 6 V 15 C 2.24 V 4 A 13 ns Especially suited as boost diode in continuous mode power factor correctors and hard switching conditions Designed for high di/dt operation. Hyperfast recovery current to compete with SiC devices. Allows downsizing of mosfet and heatsinks Internal ceramic insulated devices with equal thermal conditions for both 3 V diodes Insulation (25 V RMS ) allows placement on same heatsink as mosfet and flexible heatsinking on common or separate heatsink Static and dynamic equilibrium of internal diodes are warranted by design Package Capacitance: C = 7 p Description The TURBOSWITCH H is an ultra high performance diode composed of two 3 V dice in series. TURBOSWITCH H family drastically cuts losses in the associated MOSET when run at high di /dt. Table 2. Part number STTH86DTI 1 2 Order codes 1 2 Insulated TO-22AC Marking STTH86DTI Table 3. Absolute ratings (limiting values) Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 6 V I (RMS) RMS forward voltage 14 A I SM Surge non repetitive forward current t p = 1 ms sinusoidal 18 A T stg Storage temperature range -65 to + 15 C T j Maximum operating junction temperature 15 C July 27 Rev 5 1/7 7
2 Characteristics STTH86DTI 1 Characteristics Table 4. Thermal parameter Symbol Parameter Value Unit R th(j-c) Junction to case thermal resistance 2.6 C/W Table 5. Static electrical characteristics Symbol Parameter Test conditions Min. Typ Max. Unit I R (1) Reverse leakage current T j = 25 C 1 V R = V RRM T j = 125 C 15 1 µa V (2) orward voltage drop T j = 25 C 3.6 I = 8 A T j = 15 C V 1. Pulse test: tp = 1 ms, δ < 2% 2. Pulse test: tp = 38 µs, δ < 2% Table 6. To evaluate the conduction losses use the following equation: P = 1.7 x I (AV) +.87 I 2 (RMS) Dynamic characteristics Symbol Parameter Test conditions Min Typ Max Unit t rr Reverse recovery time T j = 25 C I =.5 A, I rr =.25 A, I R = 1 A 13 I = 1 A, di /dt = - 5 A/µs V R = 3 V I RM Reverse recovery current S Reverse recovery softness factor T j = 125 C I = 8 A, V R = 4, VdI /dt = - 2 A/µs.4 Q rr Reverse recovery charges 5 3 ns A Table 7. Turn-on switching characteristics Symbol Parameter Test conditions Min. Typ Max. Unit t fr orward recovery time T j = 25 C I = 8 A, di /dt = 1 A/µs V R = 1.1 x V max 2 ns V P orward recovery voltage T j = 25 C I = 8 A, di /dt = 1 A/µs 7 V 2/7
3 STTH86DTI Characteristics igure 1. Conduction losses versus average current igure 2. orward voltage drop versus forward current 3 25 P(W) δ =.5 δ =.1 δ =.2 δ =.5 1 I M(A) (maximum values) 2 15 δ = 1 1 T j=25 C (maximum values) 1 T 5 I δ=tp/t tp (AV) (A) V M(V) igure 3. Relative variation of thermal impedance junction to case versus pulse duration igure 4. Peak reverse recovery current versus di /dt 1. Z th(j-c) /Rth(j-c) 9 8 I RM(A) V R=4V I =2 x I(AV).8 7 I=I (AV).6 δ = I =.5 x I(AV).4 δ =.2 δ =.1 T.2 Single pulse t p(s). δ=tp/t tp 1E-3 1E-2 1E-1 1E igure 5. Reverse recovery time versus di /dt igure 6. Reverse charges versus di /dt 6 5 t (ns) rr V R=4V Q (nc) rr V R=4V I =2 x I(AV) 4 I =2 x I(AV) 1 I=I (AV) 3 I=I (AV) I =.5 x I(AV) 8 6 I =.5 x I(AV) /7
4 Characteristics STTH86DTI igure 7. Softness factor versus di /dt igure 8. Relative variation of dynamic parameters versus junction temperature (reference: T j = 125 C) S I <2xI(AV) V R=4V S IRM I=I (AV) V R=4V Reference:.4.2 T j( C) igure 9. Transient peak forward voltage versus di /dt igure 1. orward recovery time versus di /dt V P(V) I=I (AV) t (ns) fr I=I (AV) V R=1.1 x V max /7
5 STTH86DTI Package information 2 Package information Epoxy meets UL94, V Cooling method: C Recommended torque value:.4 to.6 Nm Table 8. TO-22AC insulated dimensions Ref. Millimeters Dimensions Inches Min. Typ. Max. Min. Typ. Max. A B Ø I b2 C a a I4 L A B b b C a1 c2 c l2 a2 c e e b1 M c ØI I L l M In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: 5/7
6 Ordering information STTH86DTI 3 Ordering information Table 9. Ordering information Part number Marking Package Weight Base qty Delivery mode STTH86DTI STTH86DTI TO-22AC 2.3 g 5 Tube 4 Revision history Table 1. Revision history Date Revision Changes Oct-23 2A Initial release May-24 3 Reformatted 29-Jun Jul-27 5 Corrections to typographical errors. No technical changes. Reformatted to current standards. Removed I PEAK parameter from Table 3: Absolute ratings (limiting values). 6/7
7 STTH86DTI Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET ORTH IN ST S TERMS AND CONDITIONS O SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE O ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES O MERCHANTABILITY, ITNESS OR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS O ANY JURISDICTION), OR INRINGEMENT O ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED OR USE IN MILITARY, AIR CRAT, SPACE, LIE SAVING, OR LIE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE AILURE OR MALUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. 27 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - inland - rance - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 7/7
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