STPS30H60C. Power Schottky rectifier. Features. Description
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1 Power Schottky rectifier Features High junction temperature capability valanche rated Low leakage current Good trade-off between leakage current and forward voltage drop High frequency operation 1 2 K 2 1 K STPS3H6CFP Description Dual centre tab Schottky rectifier suited for high frequency switch mode power supply. Packaged in, TO-22B, TO-247, I 2 PK, and D 2 PK, this device is intended to be used in notebook and LCD adaptors and desktop SMPS. In these applications the STPS3H6C provides a good margin between the remaining voltages applied on the diode and the voltage capability of the diode. TO-22B STPS3H6CT K 1 K 2 1 K 2 I 2 PK STPS3H6CR 2 1 D 2 PK STPS3H6CG 1 K 2 TO-247 STPS3H6CW Table 1. Symbol Device summary Value I F(V) 2 X 15 V RRM 6 V T j 175 C V F (typ).535 V July 211 Doc ID Rev 3 1/
2 Characteristics STPS3H6C 1 Characteristics Table 2. bsolute ratings (limiting values per diode) Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 6 V I F(RMS) Forward rms current 3 I F(V) verage forward current, δ =.5 TO-22B T c = 155 C T c = 125 C Per diode 15 Total package 3 Per diode 15 T c = 9 C Total package 3 I FSM Surge non repetitive forward current t p = 1 ms sinusoidal 23 P RM Releative peak avalanche power T j = 25 C t p = 1 µs 1 2 W T stg Storage temperature range -65 to C T j Maximum operating junction temperature (1) 175 C 1. dptot 1 < dtj Rth(j-a) condition to avoid thermal runaway for a diode on its own heatsink Table 3. Thermal parameters Symbol Parameter Value Unit R th(j-c) R th(c) Junction to case Coupling TO-22B, I 2 PK, D 2 PK, TO-247 Per diode 1.5 Total.8 Per diode 4.7 Total 3.95 TO-22B, I 2 PK, D 2 PK, TO Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit I R (1) V F (2) Reverse leakage current Forward voltage drop 1. Pulse test: t p = 5 ms, δ < 2% 2. Pulse test: t p = 38 µs, δ < 2% To evaluate the conduction losses use the following equation: P =.45 x I F(V) +.8 x I F 2 (RMS) C/W T j = 25 C 6 µ V R = V RRM T j = 125 C 8 25 m T j = 25 C 55 I F = 7.5 T j = 125 C T j = 25 C 66 I F = 15 T j = 125 C T j = 25 C 82 I F = 3 T j = 125 C mv 2/11 Doc ID Rev 3
3 Characteristics Figure 1. Conduction losses versus average forward current Figure 2. verage forward current versus ambient temperature (δ =.5, per diode) 12 1 P F(V) (W) δ=.5 δ=.1 δ=.2 δ=.5 δ=1 I F(V) () R th(j-a) =R th(j-c) R th(j-a) =15 C/W T 2 I F(V) () δ=tp/t tp T amb( C) Figure 3. Normalized avalanche power derating versus pulse duration Figure 4. Normalized avalanche power derating versus junction temperature 1 P P RM RM (tp) (1µs) P RM(T) j P RM(25 C) t (µs) T j( C) p Figure 5. Non repetitive surge peak forward current versus overload duration (maximum values, per diode) Figure 6. Non repetitive surge peak forward current versus overload duration (maximum values, per diode) 2 18 I () M 2 2 TO-22B,TO-247 D PK, I PK 12 I () M T C =5 C 8 T C =5 C 1 T C =75 C 8 6 T C =125 C 4 IM 2 t δ =.5 t(s) 1.E-3 1.E-2 1.E-1 1.E+ 6 T C =75 C 4 T 2 C =125 C IM t t(s) δ =.5 1.E-3 1.E-2 1.E-1 1.E+ Doc ID Rev 3 3/11
4 Characteristics STPS3H6C Figure 7. Relative variation of thermal impedance junction to case versus pulse duration Figure 8. Relative variation of thermal impedance junction to case versus pulse duration Z th(j-c) /Rth(j-c) 2 2 TO-22B,TO-247 D PK, I PK δ=.5 δ=.2 δ=.1.1 Single pulse t p(s) δ=tp/t tp. 1.E-3 1.E-2 1.E-1 1.E+ T Z th(j-c) /Rth(j-c) δ=.5 δ=.2 δ=.1 Single pulse t (s) p δ=tp/t 1.E-3 1.E-2 1.E-1 1.E+ 1.E+1 T tp Figure 9. 1.E+2 1.E+1 I (m) R Reverse leakage current versus reverse voltage applied (typical values, per diode) T j =15 C T j =125 C Figure 1. C(nF) 1. Junction capacitance versus reverse voltage applied (typical values, per diode) F=1MHz V osc =3mV RMS T j =25 C 1.E+ 1.E-1 T j =1 C T j =75 C T j =5 C 1. 1.E-2 1.E-3 T j =25 C V (V) R V (V) R Figure 11. Forward voltage drop versus forward current (per diode) Figure 12. Thermal resistance junction to ambient versus copper surface under tab I FM() 1 T J =125 C Maximum values 8 7 R th(j-a) ( C/W) epoxy printed board FR4, copper thickness = 35 µm 2 D PK T J =125 C Typical values T J =25 C Maximum values V FM(V) S(cm²) /11 Doc ID Rev 3
5 Package information 2 Package information Epoxy meets UL94, V Cooling method: by conduction (C) Recommended torque values: and TO-22B.4 to.6 N m TO to 1.2 N m In order to meet environmental requirements, ST offers these devices in different grades of ECOPCK packages, depending on their level of environmental compliance. ECOPCK specifications, grade definitions and product status are available at: ECOPCK is an ST trademark. Table 5. dimensions Ref. Millimeters Dimensions Inches H B Min. Max. Min. Max B D E Dia F L6 F L2 L7 F L3 G L4 F1 F2 L5 D G H L2 16 Typ..63 Typ. G1 F E L L G L L L Dia Doc ID Rev 3 5/11
6 Package information STPS3H6C Table 6. TO-22B dimensions Dimensions Ref Millimeters Inches Min. Max. Min. Max H2 Dia C C D L5 L7 E F L6 F L2 F2 F1 L9 D F G G L4 H F G1 G M E L typ..645 typ. L L L L L M 2.6 typ..12 typ. Diam /11 Doc ID Rev 3
7 Package information Table 7. TO-247 dimensions Dimensions Ref Millimeters Inches Min. Typ. Max. Min. Typ. Max V D E V Dia F F H F F L5 F L F1 V2 F(x3) G F2 F3 F4 L2 L4 L1 L3 M D E G H L L L L L L M V 5 5 V2 6 6 Dia Doc ID Rev 3 7/11
8 Package information STPS3H6C Table 8. I 2 PK dimensions Dimensions Ref. Millimeters Inches Min. Max. Min. Max L2 E c b b D c c L1 1 D L b1 e e E e e1 b c L L L /11 Doc ID Rev 3
9 Package information Table 9. D 2 PK dimensions Dimensions Ref. Millimeters Inches Min. Max Min. Max. L2 E C L D B B L3 B2 B 1 C R C C D G E G M * V2 L L * FLT ZONE NO LESS THN 2mm L M R.4 typ..16 typ. V2 8 8 Figure 13. Footprint (dimensions in millimeters) Doc ID Rev 3 9/11
10 Ordering information STPS3H6C 3 Ordering information Table 1. Ordering information Order code Marking Package Weight Base qty Delivery mode STPS3H6CT STPS3H6CT TO-22B 2.23 g 5 Tube STPS3H6CR STPS3H6CR I 2 PK 1.49 g 5 Tube STPS3H6CG STPS3H6CG D 2 PK 1.48 g 5 Tube STPS3H6CG-TR STPS3H6CG-TR D 2 PK 1.48 g 1 Tape and reel STPS3H6CW STPS3H6W TO g 3 Tube STPS3H6CFP STPS3H6CFP 2. g 5 Tube 4 Revision history Table 11. Document revision history Date Revision Changes 27-Feb-26 1 First issue. 31-Mar Jul Updated Table 2. dded package. Updated thermal parameters in Table 2. 1/11 Doc ID Rev 3
11 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. ll ST products are sold pursuant to ST s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS ND CONDITIONS OF SLE ST DISCLIMS NY EXPRESS OR IMPLIED WRRNTY WITH RESPECT TO THE USE ND/OR SLE OF ST PRODUCTS INCLUDING WITHOUT LIMITTION IMPLIED WRRNTIES OF MERCHNTBILITY, FITNESS FOR PRTICULR PURPOSE (ND THEIR EQUIVLENTS UNDER THE LWS OF NY JURISDICTION), OR INFRINGEMENT OF NY PTENT, COPYRIGHT OR OTHER INTELLECTUL PROPERTY RIGHT. UNLESS EXPRESSLY PPROVED IN WRITING BY N UTHORIZED ST REPRESENTTIVE, ST PRODUCTS RE NOT RECOMMENDED, UTHORIZED OR WRRNTED FOR USE IN MILITRY, IR CRFT, SPCE, LIFE SVING, OR LIFE SUSTINING PPLICTIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FILURE OR MLFUNCTION MY RESULT IN PERSONL INJURY, DETH, OR SEVERE PROPERTY OR ENVIRONMENTL DMGE. ST PRODUCTS WHICH RE NOT SPECIFIED S "UTOMOTIVE GRDE" MY ONLY BE USED IN UTOMOTIVE PPLICTIONS T USER S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. ll other names are the property of their respective owners. 211 STMicroelectronics - ll rights reserved STMicroelectronics group of companies ustralia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of merica Doc ID Rev 3 11/11
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