STPS30M60S. Power Schottky rectifier. Features. Description. High current capability Avalanche rated Low forward voltage drop High frequency operation

Transcription

1 STPS30M60S Power Schottky rectifier Features High current capability valanche rated Low forward voltage drop High frequency operation Description The STPS30M60S is a single Schottky diode, suited for high frequency switch mode power supply. Packaged in TO-220B, I 2 P and D 2 P, this device is intended to be used in notebook, game station and desktop adapters, providing in these applications a good efficiency at both low and high load. Table 1. Symbol Device summary alue I F() 30 RRM 60 F (typ) T (max) 150 C Figure 1. I 2 P STPS30M60SR I TO-220B STPS30M60ST D 2 P STPS30M60SG-TR Electrical characteristics (a) 2 x I O I "Forward" X I F RRM R R I O I R X To F(Io) F F(2xIo) "Reverse" I R a. RM and I RM must respect the reverse safe operating area defined in Figure 12. R and I R are pulse measurements (t p < 1 µs). R, I R, RRM and F, are static characteristics October 2011 Doc ID Rev 1 1/9 9

2 Characteristics STPS30M60S 1 Characteristics Table 2. bsolute ratings (limiting values with terminals 1 and 3 short circuited at 25 C, unless otherwise specified) Symbol Parameter alue Unit RRM Repetitive peak reverse voltage 60 I F(RMS) Forward rms current 90 I F() verage forward current, δ = 0.5 T c = 130 C Per package 30 I FSM Surge non repetitive forward current t p = 10 ms sine-wave 600 P (1) RM Repetitive peak avalanche power T = 25 C, t p = 1 µs W RM (2) Maximum repetitive peak avalanche voltage 1. For temperature or pulse time duration deratings, please refer to Figure 4 and 5. More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the application notes N1768 and N See Figure dptot 1 < condition to avoid thermal runaway for a diode on its own heatsink dt Rth(-a) Table 3. Thermal resistance Symbol Parameter alue Unit To evaluate the conduction losses use the following equation: P = x I F() x I F 2 (RMS) t p < 1 µs, T < 150 C, I R < (2) Maximum single-pulse SM peak avalanche voltage t p < 1 µs, T < 150 C, I R < T stg Storage temperature range -65 to +175 C T Maximum operating unction temperature (3) 150 C R th(-c) Junction to case 0.9 C/W Table 4. Static electrical characteristics (terminals 1 and 3 short circuited) Symbol Parameter Test conditions Min. Typ. Max. Unit I R (1) F (2) Reverse leakage current Forward voltage drop 1. Pulse test: t p = 5 ms, δ < 2% 2. Pulse test: t p = 380 µs, δ < 2% T = 25 C µ R = RM T = 125 C m T = 25 C I F = 15 T = 125 C T = 25 C I F = 30 T = 125 C /9 Doc ID Rev 1

3 STPS30M60S Characteristics Figure 2. verage forward power dissipation versus average forward current Figure 3. verage forward current versus ambient temperature (δ = 0.5) P F() (W) I F() () 24 δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 δ = 1 30 R th(-a) = R th(-c) T 4 δ = t p / T 0 t p I F() () T amb( C) Figure 4. Normalized avalanche power derating versus pulse duration Figure 5. Normalized avalanche power derating versus unction temperature 1 P P RM RM (tp) (1µs) P RM(T) P RM(25 C) t (µs) T ( C) p Figure I () M I M Non repetitive surge peak forward current versus overload duration (maximum values) T = 25 C c T = 75 C c T = 125 C c 50 t 0 δ = 0.5 t(s) 1.E-03 1.E-02 1.E-01 1.E+00 Figure Z th(-c) /Rth(-c) Single pulse Relative variation of thermal impedance unction to case versus pulse duration t p(s) 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 Doc ID Rev 1 3/9

4 Characteristics STPS30M60S Figure 8. 1.E+03 1.E+02 1.E+01 1.E+00 I (m) R Reverse leakage current versus reverse voltage applied (typical values) T = 150 C T = 125 C T = 100 C T = 75 C Figure 9. C(pF) Junction capacitance versus reverse voltage applied (typical values) F = 1 MHz osc = 30 m T = 25 C RMS 1.E-01 1.E-02 T = 50 C T = 25 C R() 1.E R() Figure 10. I FM() Forward voltage drop versus forward current T = 125 C (Typical values) T = 125 C (Maximum values) Figure 11. Thermal resistance unction to ambient versus copper surface under tab R th(-a) ( C/W) 80 epoxy printed board copper thickness = 35 µm DP T = 25 C (Maximum values) FM() S Cu(cm ) Figure 12. Reverse safe operating area (t p < 1 µs and T < 150 C) I arm () I arm ( arm) 150 C, 1µs arm () 4/9 Doc ID Rev 1

5 STPS30M60S Package information 2 Package information Epoxy meets UL94, 0 Cooling method: by conduction (C) Recommended torque value: 0.4 to 0.6 N m In order to meet environmental requirements, ST offers these devices in different grades of ECOPC packages, depending on their level of environmental compliance. ECOPC specifications, grade definitions and product status are available at: ECOPC is an ST trademark. Table 5. TO-220B dimensions Ref. Millimeters Dimensions Inches Min. Max. Min. Max H2 Dia L5 C L7 C D E F L2 F2 L6 F F G F1 L9 D G F L4 H L Typ Typ. G1 G M E L L L L L M 2.6 Typ Typ. Dia Doc ID Rev 1 5/9

6 Package information STPS30M60S Table 6. D 2 P dimensions Dimensions Ref. Millimeters Inches Min. Max. Min. Max. L2 E C B L D B L3 B2 B 1 C R C C D G E G L M * 2 * FLT ZONE NO LESS THN 2mm L L M R 0.40 typ typ Figure 13. D 2 P footprint (dimensions in mm) /9 Doc ID Rev 1

7 STPS30M60S Package information Table 7. I 2 P dimensions Dimensions Ref. Millimeters Inches L2 E c2 Min. Max. Min. Max b D b c L1 1 c L b1 D e e e1 b c e E L L L Doc ID Rev 1 7/9

8 Ordering information STPS30M60S 3 Ordering information Table 8. Ordering information Order code Marking Package Weight Base qty Delivery mode STPS30M60ST STPS30M60ST TO-220B 2.2 g 50 Tube STPS30M60SR STPS30M60SR I 2 P 1.49 g 50 Tube STPS30M60SG-TR STPS30M60SG D 2 P 1.48 g 1000 Tape and reel 4 Revision history Table 9. Revision history Date Revision Changes 14-Oct First issue. 8/9 Doc ID Rev 1

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