HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
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1 SPS817C HIGH VOLAGE POWER SCHOKY RECIFIER able 1: Main Product Characteristics I F(AV) V RRM 2 x 4 A 17 V j 175 C V F (max).74 V A1 A2 K FEAURES AND BENEFIS High junction temperature capability Low leakage current Good trade off between leakage current and forward voltage drop Low thermal resistance High frequency operation Avalanche specification DESCRIPION Dual center tab Schottky rectifier suited for High Frequency Switched Mode Power Supplies. Packaged in O-247, this device is intended for use to enhance the reliability of the application. able 2: Order Code Part Number SPS817CW A2 K A1 O-247 SPS817CW Marking SPS817CW able 3: Absolute Ratings (limiting values, per diode) Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 17 V I F(RMS) RMS forward current 8 A I F(AV) Average forward current c = 15 C δ =.5 Per diode Per device I FSM Surge non repetitive forward current t p = 1 ms sinusoidal 5 A P ARM Repetitive peak avalanche power t p = 1 µs j = 25 C 382 W stg Storage temperature range -65 to C j Maximum operating junction temperature * 175 C dv/dt Critical rate of rise of reverse voltage 1 V/µs dptot * : < 1 thermal runaway condition for a diode on its own heatsink dj Rth ( j a) 4 8 A September 25 REV. 1 1/6
2 SPS817C able 4: hermal Parameters Symbol Parameter Value Unit R th(j-c) Junction to case Per diode otal R th(c) Coupling.3 When the diodes 1 and 2 are used simultaneously: j(diode 1) = P(diode 1) x R th(j-c) (Per diode) + P(diode 2) x R th(c).7.5 C/W able 5: Static Electrical Characteristics (per diode) Symbol Parameter ests conditions Min. yp Max. Unit I R * Reverse leakage current j = 25 C 8 µa V R = V RRM j = 125 C 2 8 ma V F ** Forward voltage drop j = 25 C.8.84 I F = 4 A j = 125 C j = 25 C.9.96 I F = 8 A j = 125 C.8.86 V Pulse test: * tp = 5 ms, δ < 2% ** tp = 38 µs, δ < 2% o evaluate the conduction losses use the following equation: P =.62 x I F(AV) +.3 I F 2 (RMS) 2/6
3 SPS817C Figure 1: Average forward power dissipation versus average forward current (per diode) Figure 2: Average forward current versus ambient temperature (δ =.5, per diode) P F(AV) (W) =.5 I F(AV)(A) =.1 =.2 =.5 =1 =t p/ tp I F(AV) (A) =t p/ tp R th(j-a) =R th(j-c) R th(j-a) =15 C/W amb( C) Figure 3: Normalized avalanche power derating versus pulse duration Figure 4: Normalized avalanche power derating versus junction temperature P ARM(t p) P ARM(1µs) 1 P ARM(t p) P ARM(25 C) t p(µs) j( C) Figure 5: Non repetitive surge peak forward current versus overload duration (maximum values, per diode) Figure 6: Relative variation of thermal impedance junction to case versus pulse duration I M (A) C =5 C 25 2 C =75 C 15 1 C =125 C IM 5 t =.5 t(s) 1.E-3 1.E-2 1.E-1 1.E Z th(j-c) /R th(j-c) =.5 =.2 =.1 Single pulse t P(s) = p/ 1.E-3 1.E-2 1.E-1 1.E+ tp 3/6
4 SPS817C Figure 7: Reverse leakage current versus reverse voltage applied (typical values, per diode) Figure 8: Junction capacitance versus reverse voltage applied (typical values, per diode) 1.E+6 I R (µa) 1 C(pF) F=1MHz 1.E+5 j=15 C V OSC=3mV RMS j =25 C 1.E+4 j=125 C 1.E+3 j=1 C j=75 C 1.E+2 j=5 C 1.E+1 j =25 C 1.E+ V R (V) 1.E V R(V) Figure 9: Forward voltage drop versus forward current (per diode, low level) Figure 1: Forward voltage drop versus forward current (per diode, high level) 4 35 I FM (A) 1 I FM (A) 3 25 j=125 C 1 j=125 C 2 j=125 C (ypical values) j=25 C j=125 C (ypical values) j=25 C V FM(V) V FM(V) /6
5 SPS817C Figure 11: O-247 Package Mechanical Data L L5 V V F1 V2 F(x3) H G F2 F3 F4 Dia L2 L4 L1 L3 M D A E DIMENSIONS REF. Millimeters Inches Min. yp. Max. Min. yp. Max. A D E F F F F F G H L L L L L L M V 5 5 V2 6 6 Dia In order to meet environmental requirements, S offers these devices in ECOPACK packages. hese packages have a Lead-free second level interconnect. he category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. he maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an S trademark. ECOPACK specifications are available at: able 6: Ordering Information Ordering type Marking Package Weight Base qty Delivery mode SPS817CW SPS817CW O g 3 ube Epoxy meets UL94, V Cooling method: by conduction (C) Recommended torque value:.8 Nm. Maximum torque value: 1. Nm. able 7: Revision History Date Revision Description of Changes 16-Sep-25 1 First issue. 5/6
6 SPS817C Information furnished is believed to be accurate and reliable. However, SMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SMicroelectronics. Specifications mentioned in this publication are subject to change without notice. his publication supersedes and replaces all information previously supplied. SMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SMicroelectronics. he S logo is a registered trademark of SMicroelectronics. All other names are the property of their respective owners 25 SMicroelectronics - All rights reserved SMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 6/6
Table 3: Absolute Ratings (limiting values) Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 40 V I F(RMS) RMS forward voltage 7 A
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