ESDALC6V1W5. Quad TRANSIL array for data protection. Main applications. Features. Description. Benefits SOT323-5L. Order codes
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1 Quad TRANSIL array for data protection Main applications Where transient overvoltage protection in ESD sensitive equipment is required, such as : Computers Printers Communication systems Cellular phones and accessories Wireline and wireless telephone sets Set top boxes SOT323-5L Order codes Part Number ESDALC6V1W5 Marking C61 Features 4 Unidirectional Transil functions Breakdown voltage: V BR = 6.1 V minimum Low leakage current: < 1 µa Low capacitance: 7.5 pf at 3 V Very small PCB area < 4.2 mm 2 typically Description ESDALC6V1W5 Functional diagram I/01 GND I/02 I/04 I/03 The ESDALCxxxWx are monolithic suppressors designed to protect components connected to data and transmission lines against ESD. These devices clamp the voltage just above the logic level supply for positive transients, and to a diode drop below ground for negative transients. Benefits High ESD protection level: up to 25 kv High integration Complies with the following standards IEC Level 4 15 kv (air discharge) 8 kv(contact discharge) MIL STD 883E - Method Class 3 25 kv HBM (Human Body Model) TM: TRANSIL is a trademark of STMicroelectronics Rev 5 January /7 7
2 1 Characteristics ESDALC6V1W5 1 Characteristics Table 1. Absolute Ratings (T amb = 25 C) Symbol Parameter Value Unit P PP Peak pulse power (8/20 µs) 25 W T j Junction temperature 150 C T stg Storage temperature range -55 to +150 C T L Maximum lead temperature for soldering during 10s 260 C T op Operating temperature range (1) -40 to +150 C 1. The values of the operating parameters versus temperature are given through curves and αt parameter. 1.1 Electrical Characteristics (Tamb = 25 C) Symbol Parameter V RM Stand-off voltage I V BR Breakdown voltage I F V CL Clamping voltage I RM I PP I R Leakage current Peak pulse current Reverse leakage current V CLV BR V RM I RM V F V I F Forward current αt Voltage temperature coefficient V F C Forward voltage drop Capacitance Slope: 1/R d I PP R d Dynamic resistance V I R I V RM R d αt C Part Numbers min. max. max. typ. (1) max. (2) typ. 3V bias V V ma µa V Ω 10-4 / C pf ESDALC6V1W Square pulse l pp = 15 A, t p = 2.5 µs 2. V BR = at* (T amb - 25 C) * V BR (25 C) 2/7
3 1 Characteristics Figure 1. Peak power dissipation versus initial junction temperature Figure 2. Peak pulse power versus exponential pulse duration (T j initial = 25 C) Ppp[Tj initial] / Ppp [Tj initial = 25 C] Tj( C) Ppp(W) 100 Tj initial = 25 C tp(µs) Figure 3. Clamping voltage versus peak pulse current (T j initial = 25 C, rectangular waveform, t p = 2.5 µs) Figure 4. Capacitance versus reverse applied voltage (typical values) Ipp(A) tp=2.5µs Vcl(V) Tj initial =25 C C(pF) F=1MHz Vosc=30mV RMS Tj=25 C 1 VR(V) Figure 5. Relative variation of leakage current versus junction temperature (typical values) Figure 6. Peak forward voltage drop versus peak forward current (typical values) 100 IR [Tj] / IR [Tj=25 C] 1.E+00 I FM (A) 1.E E-02 1 Tj( C) V FM(V) 1.E /7
4 2 Ordering information scheme ESDALC6V1W5 Figure 7. ESD response to IEC (air discharge 15 kv, positive surge) 2 Ordering information scheme ESD Array Low capacitance Breakdown Voltage 6V1 = 6.1 Volts min Package W5 = SOT323-5L ESDA LC 6V1 W5 4/7
5 3 Package mechanical data 3 Package mechanical data 3.1 SOT323-5L package DIMENSIONS E A REF. Millimeters Inches Min. Max. Min. Max. b e e D A A A Q1 A1 A2 b c D E c e 0.65 Typ Typ. HE HE Q Figure 8. Footprint dimensions Dimensions in mm In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: 5/7
6 4 Ordering information ESDALC6V1W5 4 Ordering information Part Number Marking Package Weight Base qty Delivery mode ESDALC6V1W5 C61 SOT323-5L 5.4 mg 3000 Tape & reel 5 Revision history Date Revision Changes Jun A Previous issue 10-Jan Reformatted to current template. Figure 5: Range of T j extended to 150 C. Figure 6: Peak forward voltage drop versus peak forward current (typical values) added. 6/7
7 5 Revision history Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 7/7
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P6KE. Transil, transient voltage surge suppressor (TVS) Features. Description. Complies with the following standards
Transil, transient voltage surge suppressor (TVS) Datasheet production data Features Peak pulse power: 600 W (10/0 µs ) Stand-off voltage range 6.8 to 440 V Unidirectional and bidirectional types Low clamping
STPS10150CG. High voltage power Schottky rectifier. Main product characteristics. Features and benefits. Description. Order Codes
STPS15C High voltage power Schottky rectifier Main product characteristics I F(AV) V RRM T j V F (max) Features and benefits HIgh junction temperature capability Good trade off between leakage current
STPS5L60. Power Schottky rectifier. Features. Description
STPS5L6 Power Schottky rectifier Features Negligible switching losses Low forward voltage drop for higher efficiency Low thermal resistance Avalanche capability specified Description K A K A Power Schottky
STG719 LOW VOLTAGE 4Ω SPDT SWITCH
LOW VOLTAGE 4Ω SPDT SWITCH HIGH SPEED: t PD = 0.3ns (TYP.) at V CC = 5V t PD = 0.4ns (TYP.) at V CC = 3.3V LOW POWER DISSIPATION: I CC = 1µA(MAX.) at T A =25 C LOW "ON" RESISTANCE: R ON = 4Ω (MAX. T A
THBTxxx11D TRIPOLAR OVERVOLTAGE PROTECTION FOR TELECOM LINE. Application Specific Discretes A.S.D. 8 TIP 7 GND 6 GND 5 RING GND 3 RING FEATURES
Application Specific Discretes A.S.D. THBTxxx11D TRIPOLAR OEROLTAGE PROTECTION FOR TELECOM LINE FEATURES n BIDIRECTIONAL CROWBAR PROTECTION BETWEEN TIP AND, AND AND BETWEEN TIP AND. n PEAK PULSE CURRENT
Obsolete Product(s) - Obsolete Product(s)
High gain Low Voltage PNP power transistor Features Very low Collector to Emitter saturation voltage D.C. Current gain, h FE >100 1.5 A continuous collector current Applications Power management in portable
Obsolete Product(s) - Obsolete Product(s)
Low power single inverter gate Features High speed: t PD = 4.3 ns (max.) at V CC = 2.3 V Power down protection on inputs and outputs Balanced propagation delays: t PLH t PHL Operating voltage range: V
EMIF08-LCD04M16. 8-line L-C IPAD, EMI filter and ESD protection in Micro QFN. Features. Description. Applications
8-line L-C IPAD, EMI filter and ESD protection in Micro QFN Features High cut off frequency low-pass filter: F C = 400 MHz at -6 db High efficiency in EMI filtering: better than -35 db from 900 MHz to
74VHC08 QUAD 2-INPUT AND GATE
QUAD 2-INPUT AND GATE HIGH SPEED: t PD = 4.3 ns (TYP.) at V CC = 5V LOW POWER DISSIPATION: I CC = 2 µa (MAX.) at T A =25 C HIGH NOISE IMMUNITY: V NIH = V NIL = 28% V CC (MIN.) POWER DOWN PROTECTION ON
74VHC132 QUAD 2-INPUT SCHMITT NAND GATE
QUAD 2-INPUT SCHMITT NAND GATE HIGH SPEED: t PD = 3.9 ns (TYP.) at V CC = 5V LOW POWER DISSIPATION: I CC = 2 µa (MAX.) at T A =25 C TYPICAL HYSTERESIS: V h = 1V at V CC = 4.5V POWER DOWN PROTECTION ON
ST2111FX HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR. Features. Applications. Internal Schematic Diagram. Description.
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Features NEW SERIES, ENHANCED PERFORMANCE FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING HIGH VOLTAGE CAPABILITY (1500V) HIGH SWITCHING SPEED
STTH High frequency secondary rectifier. Features. Description
STTH163 High frequency secondary rectifier Features Combines highest recovery and reverse voltage performance Ultra-fast, soft and noise-free recovery Insulated package: ISOTOP insulated voltage: 25 V
STTH6112TV. Ultrafast recovery V diode. Main product characteristics. Features and benefits. Order codes. Description STTH6112TV2 STTH6112TV1
Ultrafast recovery - 12 V diode Main product characteristics I F(AV) 2 x 3 A K2 A2 A2 K1 V RRM 12 V T j 15 C V F (typ) t rr (typ) 1.3 V 45 ns K1 A1 STTH6112TV1 K2 A1 STTH6112TV2 Features and benefits A1
Obsolete Product(s) - Obsolete Product(s)
QUAD 2-INPUT AND GATE HIGH SPEED: t PD = 4.7 ns (TYP.) at V CC = 5V LOW POWER DISSIPATION: I CC = 2 µa (MAX.) at T A =25 C COMPATIBLE WITH TTL OUTPUTS: V IH = 2V (MIN.), V IL = 0.8V (MAX) POWER DOWN PROTECTION
Obsolete Product(s) - Obsolete Product(s)
P-channel 20V - 0.065Ω - 4.2A - SOT-223 2.5V - Drive STripFET II Power MOSFET General features Type V DSS R DS(on) I D STN5PF02V 20V
ESDCAN03-2BWY. Automotive dual-line Transil, transient voltage suppressor (TVS) for CAN bus. Application. Description. Features
Automotive dual-line Transil, transient voltage suppressor (TVS) for CAN bus Application Datasheet - production data Automotive controller area network (CAN) bus lines where electrostatic discharge and
Inverting Input 1. Non-inverting Input 1
Micropower Dual CMOS Voltage Comparators Extremely low supply current: 9µa typ/comp. Wide single supply range 2.7V to 6V or dual supplies (±.35V to ±8V) Extremely low input bias current: pa typ. Extremely
74VHCT00ATTR QUAD 2-INPUT NAND GATE
QUAD 2-INPUT NAND GATE HIGH SPEED: t PD = 5 ns (TYP.) at V CC = 5V LOW POWER DISSIPATION: I CC = 2 µa (MAX.) at T A =25 C COMPATIBLE WITH TTL OUTPUTS: V IH = 2V (MIN.), V IL = 0.8V (MAX) POWER DOWN PROTECTION
ESDAL. Dual Transil array for ESD protection
Dual Transil array for ESD protection Datasheet - production data Applications Where transient overvoltage protection in ESD sensitive equipment is required, such as: Entertainment Signal communications
ESDAxxSCxY. Automotive quad-line Transil transient voltage suppressor (TVS) for ESD protection. Applications. Description. Features.
Automotive quad-line Transil transient voltage suppressor (TVS) for ESD protection Applications Datasheet - production data Where ESD and EOS transient overvoltage protection in susceptible equipment is
STTH20003TV. Ultrafast high voltage rectifier. Mian product characteristics. Features and benefits. Description. Order codes
Ultrafast high voltage rectifier Mian product characteristics I F(AV) up to 2 x 1 A V RRM 3 V A1 K1 T j (max) 15 C A2 K2 V F (typ).95 V K1 t rr (max) 9 ns A1 Features and benefits K2 Combines highest recovery