HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
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1 SPS315C HIH VOL POWR SCHOY RCIFIR MIN PROUC CHRCRISICS I F(V) V RRM x15 15 V j 175 C V F (max).75 V FURS N BNFIS HIH JUNCION MPRUR CPBILIY OO R OFF BWN L CURRN N FORWR VOL ROP LOW L CURRN INSUL PC: O-FPB Insulating voltage: V C Capacitance: 45pF VLNCH CPBILIY SPCIFI SCRIPION ual center tap schottky rectifier designed for high frequency Switched Mode Power Supplies. O-FPB SPS315CFP O-47 SPS315CW P SPS315C O-B SPS315C BSOLU RINS (limiting values, per diode) Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 15 V I F(RMS) RMS forward current 3 I F(V) verage forward current O-FPB c = 1 C per diode 15 δ =.5 O-B/ P c = 155 C per device O-47 3 I FSM Surge non repetitive forward current tp = 1 ms sinusoidal P RM Repetitive peak avalanche power tp = 1µs j = 5 C 15 W stg Storage temperature range - 65 to C j Maximum operating junction temperature * 175 C dv/dt Critical rate of rise of reverse voltage 1 V/µs * : dptot 1 < dj Rth( j a) thermal runaway condition for a diode on its own heatsink February 4 - d: 7 1/7
2 SPS315C HRML RSISNCS Symbol Parameter Value Unit R th (j-c) Junction to case O-FPB Per diode otal O-B/ P Per diode otal O-47 Per diode otal R th (c) O-FPB Coupling.6 O-B/ P Coupling.1 O-47 Coupling C/W When the diodes 1 and are used simultaneously : j(diode 1) = P(diode1) x R th(j-c) (Per diode) + P(diode ) x R th(c) SIC LCRICL CHRCRISICS (per diode) Symbol Parameter ests conditions Min. yp. Max. Unit I R * Reverse leakage current j = 5 C V R =V RRM 6.5 µ j = 15 C 8 m V F ** Forward voltage drop j = 5 C I F = 15.9 V j = 15 C I F = j = 5 C I F = 3 1 j = 15 C I F = Pulse test : * tp = 5 ms, δ <% ** tp = 38 µs, δ <% o evaluate the conduction losses use the following equation: P =.64 x I F(V) +.73 I F (RMS) Fig. 1: verage forward power dissipation versus average forward current (per diode). Fig. : verage forward current versus ambient temperature (δ =.5, per diode). 14 P F(V) (W) δ =.1 δ =. δ = I F(V) () Rth(j-a)=Rth(j-c) O-B / O-47 / P 1 δ = δ = 1 1 Rth(j-a)=15 C/W O-FP 8 1 Rth(j-a)=Rth(j-c) I F(V) () δ=tp/ tp δ=tp/ tp amb( C) /7
3 SPS315C Fig. 3: Normalized avalanche power derating versus pulse duration. Fig. 4: Normalized avalanche power derating versus junction temperature. P RM(t p) P RM(1µs) 1 P RM(t p) P RM(5 C) t p(µs) j( C) Fig. 5-1: Non repetitive surge peak forward current versus overload duration (maximum values, per diode) (O-B, O-47, P) I () M IM t δ=.5 t(s) c=5 C c=75 C c=15 C Fig. 5-: Non repetitive surge peak forward current versus overload duration (maximum values, per diode) (O-FPB) I () M IM t δ=.5 t(s) c=5 C c=75 C c=15 C Fig. 6-1: Relative variation of thermal impedance junction to case versus pulse duration (per diode) (O-B, O-47, P) Z th(j-c) /Rth(j-c) δ =.5 δ =. δ =.1 Single pulse t (s) p δ=tp/ tp Fig. 6-: Relative variation of thermal impedance junction to case versus pulse duration. (O-FPB) Z th(j-c) /Rth(j-c) δ =.5 δ =. δ =.1 Single pulse t (s) p δ=tp/ tp 3/7
4 SPS315C Fig. 7: Reverse leakage current versus reverse voltage applied (typical values, per diode). Fig. 8: Junction capacitance versus reverse voltage applied (typical values, per diode) I (µ) R j=175 C j=15 C 1 C(pF) F=1MHz V OSC=3mVRMS j=5 C 1+3 j=15 C j=1 C j=5 C V (V) R V (V) R Fig. 9: Forward voltage drop versus forward current (maximum values, per diode). I FM() 1. j=15 C (maximum values) Fig. 1: hermal resistance junction to ambient versus copper surface under tab (poxy printed circuit board, copper thickness: 35µm) (O-FPB). 8 7 R th(j-a) ( C/W) j=15 C (typical values) j=5 C (maximum values) V FM(V) S(Cu)(cm²) /7
5 PC MCHNICL P SPS315C IMNSIONS RF. Millimeters Inches Min. Max. Min. Max. L C L L3 B B C R B B C C L L M * V L M * FL ZON NO LSS HN mm R.4 typ..16 typ. V 8 8 FOO PRIN IMNSIONS (in millimeters) /7
6 SPS315C PC MCHNICL O-B IMNSIONS L F F1 F 1 H ia L5 L9 L6 L4 C M L7 RF. Millimeters Inches Min. Max. Min. Max C F F F H L 16.4 typ..645 typ. L L L L L M.6 typ..1 typ. iam PC MCHNICL O-FPB L3 L L4 1 H L6 L5 F1 F F ia B L7 IMNSIONS RF. Millimeters Inches Min. Max. Min. Max B F F F H L 16 yp..63 yp. L L L L L ia /7
7 SPS315C PC MCHNICL O-47 L L5 V V F1 V F(x3) H = = F F3 F4 ia. L L4 L1 L3 M IMNSIONS RF. Millimeters Inches Min. yp. Max. Min. yp. Max F F F..78 F F H L L L L L L M V 5 5 V 6 6 ia Cooling method : C Recommended torque value :.8m.N Maximum torque value : 1.m.N Ordering ype Marking Package Weight Base qty elivery mode SPS315C SPS315C O-B g 5 ube SPS315CFP SPS315CFP O-FPB 1.9 g 5 ube SPS315CW SPS315CW O g 3 ube SPS315C SPS315C P 1.48 g 5 ube SPS315C-R SPS315C P 1.48 g 1 ape & reel poxy meets UL94, V Information furnished is believed to be accurate and reliable. However, SMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SMicroelectronics. Specifications mentioned in this publication are subject to change without notice. his publication supersedes and replaces all information previously supplied. SMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SMicroelectronics. he S logo is a registered trademark of SMicroelectronics. ll other names are the property of their respective owners. 4 SMicroelectronics - ll rights reserved. SMicroelectronics ROUP OF COMPNIS ustralia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - ermany - Hong ong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United ingdom - United States 7/7
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