STPS10L45CT/CG/CF/CFP
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- Laureen Bond
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1 SPSL45C/CG/CF/CFP LOW DROP POWER SCHOY RECIFIER MIN PRODUCS CHRCERISICS I F(V) 2x5 V RRM 45 V j (max) 15 C V F (max).46 V FEURES ND BENEFIS LOW FORWRD VOLGE DROP MENING VERY SMLL CONDUCION LOSSES LOW SWICHING LOSSES LLOWING HIGH FREQUENCY OPERION INSULED PCGE: ISOW22B, Insulating voltage = 2V DC Capacitance = 12pF VLNCHE CPBILIY SPECIFIED SPSL45CFP D 2 P SPSL45CG DESCRIPION Dual center tap Schottky rectifiers suited for Switched Mode Power Supplies and high frequency DC to DC converters. Packaged in O-22B, ISOW22B, and D 2 P, these devices are intended for use in low voltage, high frequency inverters, free-wheeling and polarity protection applications. BSOLUE RINGS (limiting values, per diode) Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 45 V I F(RMS) RMS forward current 2 I F(V) July 23 - Ed: 3B verage forward current O-22B D 2 P ISOW22B O-22B SPSL45C c =135 C δ =.5 Per diode Per device c =115 C Per diode 5 δ =.5 Per device I FSM Surge non repetitive forward current tp = ms Sinusoidal 15 I RRM Repetitive peak reverse current tp =2µssquare F=1kHz 1 I RSM Non repetitive peak reverse current tp = µs square 2 P RM Repetitive peak avalanche power tp = 1µs j = 25 C 27 W stg Storage temperature range - 65 to + 15 C j Maximum operating junction temperature * 15 C dv/dt Critical rate of rise of reverse voltage V/µs *: dptot 1 < thermal runaway condition for a diode on its own heatsink dj Rth( j a) 5 ISOW22B SPSL45CF 1/7
2 SPSL45C/CG/CF/CFP HERML RESISNCES Symbol Parameter Value Unit R th (j-c) Junction to case O-22B Per diode 3 C/W D 2 P otal 1.7 R th (c) Coupling.35 R th (j-c) Junction to case ISOW22B Per diode 5 C/W otal 3.8 R th (c) Coupling 2.5 When the diodes 1 and 2 are used simultaneously : j(diode 1) = P(diode1) x R th(j-c) (Per diode) + P(diode 2) x R th(c) SIC ELECRICL CHRCERISICS (per diode) Symbol Parameter ests Conditions Min. yp. Max. Unit I R * Reverse leakage j = 25 C V R =V RRM.15 m current j = 125 C 45 9 m V F * Forward voltage drop j = 25 C I F =5.53 V Pulse test : * tp = 38 µs, δ <2% o evaluate the conduction losses use the following equation : P=.33xI F(V) +.26 I F 2 (RMS) j = 125 C I F = j=25 C I F =.67 j = 125 C I F = Fig. 1: verage forward power dissipation versus average forward current (per diode) PF(av)(W) δ =.5 δ =.1 δ =.2 δ =.5 δ = 1.5 IF(av) () δ=tp/ tp Fig. 2: verage forward current versus ambient temperature (δ=.5, per diode). 6 IF(av)() O-22B/D²P ISOW22B Rth(j-a)=Rth(j-c) Rth(j-a)=15 C/W 1 δ=tp/ tp amb( C) /7
3 SPSL45C/CG/CF/CFP Fig. 3: Normalized avalanche power derating versus pulse duration. Fig. 4: Normalized avalanche power derating versus junction temperature. P RM(t p) P RM(1µs) 1 P RM(t p) P RM(25 C) t p(µs).2 j( C) Fig. 5-1: Non repetitive surge peak forward current versus overload duration (maximum values, per diode) (O-22B and D 2 P) IM() IM t δ=.5 t(s) c=25 C c=75 C c=125 C 1E-3 1E-2 1E-1 1E+ Fig. 5-2: Non repetitive surge peak forward current versus overload duration (maximum values, per diode) (ISOW22B, ). IM() c=25 C 4 c=75 C 3 2 c=125 C IM t δ=.5 t(s) 1E-3 1E-2 1E-1 1E+ Fig. 6-1: Relative variation of thermal impedance junction to case versus pulse duration. (O-22B and D 2 P) Zth(j-c)/Rth(j-c) Fig. 6-2: Relative variation of thermal impedance junction to case versus pulse duration. (ISOW22B, ) Zth(j-c)/Rth(j-c).6 δ =.5.6 δ = δ =.2 δ =.1 Single pulse tp(s) δ=tp/ tp. 1E-3 1E-2 1E-1 1E+.4 δ =.2.2 δ =.1 Single pulse tp(s) δ=tp/ tp. 1E-3 1E-2 1E-1 1E+ 1E+1 3/7
4 SPSL45C/CG/CF/CFP Fig. 7: Reverse leakage current versus reverse voltage applied (typical values, per diode). Fig. 8: Junction capacitance versus reverse voltage applied (typical values, per diode). IR(m) 1E+2 1E+1 j=15 C j=125 C C(pF) F=1MHz j=25 C 1E+ 1E-1 j= C 1E-2 j=25 C VR(V) 1E VR(V) Fig. 9: Forward voltage drop versus forward current (maximum values, per diode).. IFM(). 1. j=15 C ypical values j=25 C j=125 C VFM(V) Fig. : hermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35µm)( D 2 P). Rth(j-a) ( C/W) S(Cu) (cm²) /7
5 SPSL45C/CG/CF/CFP PCGE MECHNICL D O-22B L2 F2 F1 F G1 H2 Dia G L5 L9 L6 L4 C D M E L7 REF. Millimeters Inches C D E F F F G G H L typ..645 typ. L L L L L M 2.6 typ..2 typ. Diam PCGE MECHNICL D L3 L2 L4 G1 H G L6 L5 F1 F2 F Dia D B E L7 REF. Millimeters Inches B D E F F F G G H L2 16 yp..63 yp. L L L L L Dia /7
6 SPSL45C/CG/CF/CFP PCGE MECHNICL D D 2 P L L2 L3 E G B2 B C2 D C R M * V2 * FL ZONE NO LESS HN 2mm REF. Millimeters Inches B B C C D E G L L L M R.4 typ..16 typ. V2 8 8 FOO PRIN (in millimeters) /7
7 SPSL45C/CG/CF/CFP PCGE MECHNICL D ISOW22B REF. Millimeters Inches B D E F F F G G H L2 16. typ..63 typ. L L L L Diam Ordering type Marking Package Weight Base qty Delivery mode SPSL45C SPSL45C O-22B 2.23g 5 ube SPSL45CFP SPSL45CFP 2 g 5 ube SPSL45CG SPSL45CG D²P 1.48g 5 ube SPSL45CG-R SPSL45CG D²P 1.48g ape & reel SPSL45CF SPSL45CF ISOW22B 2.8g 5 ube Cooling method : by conduction (C) Recommended torque value :.55 N.m. Maximum torque value :.7 N.m. Epoxy meets UL94,V Information furnished is believed to be accurate and reliable. However, SMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SMicroelectronics. Specifications mentioned in this publication are subject to change without notice. his publication supersedes and replaces all information previously supplied. SMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SMicroelectronics. he S logo is a registered trademark of SMicroelectronics 23 SMicroelectronics - Printed in Italy - ll rights reserved. SMicroelectronics GROUP OF COMPNIES ustralia - Brazil - Canada - China - Finland - France - Germany Hong ong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United ingdom - United States. 7/7
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