Obsolete Product(s) - Obsolete Product(s)
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1 TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS I F(AV) V RRM FEATURES AND BENEFITS SPECIFIC TO FREEWHEEL MODE OPERA- TIONS: FREEWHEEL OR BOOSTER DIODE. ULTRA-FAST AND SOFT RECOVERY. VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR. HIGH FREQUENCY OPERATIONS. INSULATED PACKAGE : DOP3I Electrical insulation : 25V RMS Capacitance < 12 pf DESCRIPTION 2A 6V t rr (typ) 3ns V F (max) 1.5V The TURBOSWITCH is a very high performance series of ultra-fast high voltage power diodes from 6V to 12V. TURBOSWITCH family, drastically cuts losses in both the diode and the associated switching IGBT or MOSFET in all freewheel mode operations ABSOLUTE RATINGS (limiting values) and is particularly suitable and efficient in Motor control freewheel applications and in booster diode applications in power factor control circuitries. Packaged either in or in DOP3I, these Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 6 V V RSM Non repetitive peak reverse voltage 6 V I F(RMS) RMS forward current 5 A I FRM Repetitive peak forward current tp = 5 µs F = 5kHz square 27 A I FSM Surge non repetitive forward current tp=1 ms sinusoidal 18 A T j Maximum operating junction temperature 15 C T stg Storage temperature range -65 to 15 C TM : TURBOSWITCH is a trademark of STMicroelectronics K STTA26P K A Isolated DOP3I K STTA26PI A May 22 - Ed: 4D 1/8
2 THERMAL AND POWER DATA Symbol Parameter Test conditions Value Unit R th(j-c) P 1 P max Junction to case thermal resistance Conduction power dissipation I F(AV) = 2A δ =.5 Total power dissipation Pmax = P1 + P3 (P3 = 1% P1) DOP3I DOP3I DOP3I Tc= 96 C Tc= 74 C Tc= 9 C Tc= 66 C C/W 36 W 4 W STATIC ELECTRICAL CHARACTERISTICS Tj = 25 C Symbol Parameter Test conditions Min Typ Max Unit V F* Forward voltage drop I F =2A Tj = 25 C 1.75 V Tj = 125 C V I R ** Reverse leakage current V R =.8 x 1 µa V RRM Tj = 125 C ma V to Threshold voltage Ip < 3.I AV Tj = 125 C 1.15 V rd Dynamic resistance 17 mω Test pulse : * tp = 38 µs, δ <2% ** tp = 5 ms, δ <2% To evaluate the maximum conduction losses use the following equation : P=V to xi F(AV) +rdxi 2 F (RMS) DYNAMIC ELECTRICAL CHARACTERISTICS TURN-OFF SWITCHING Symbol Parameter Test conditions Min Typ Max Unit t rr Reverse recovery Tj = 25 C ns time I F =.5 A I R = 1A Irr =.25A 3 I F =1A di F /dt =-5A/µs V R =3V 6 I RM Maximum reverse recovery current Tj = 125 C VR = 4V I F =2A di F /dt = -16 A/µs di F /dt = -5 A/µs 17.5 S factor Softness factor Tj = 125 C V R = 4V I F =2A di F /dt = -5 A/µs.42 TURN-ON SWITCHING Symbol Parameter Test conditions Min Typ Max Unit t fr Forward recovery time Tj = 25 C I F = 2A, di F /dt = 16 A/µs measured at, 1.1 V F max V Fp Peak forward voltage Tj = 25 C I F =2A, di F /dt = 16 A/µs A / ns V 2/8
3 Fig. 1: Conduction losses versus average current. Fig. 2: Forward voltage drop versus forward current. P1(W) 5 4 =tp/t 3 T tp =.1 =.2 VFM(V) MAXIMUM VALUES Tj=125 o C 2 1 =.5 IF(av)(A) Fig. 3: Relative variation of thermal transient impedance junction to case versus pulse duration. Fig. 5: Reverse recovery time versus di F /dt. trr(ns) 25 9% CONFIDENCE Tj= o C 2 VR=4V IF=4A 125 IF=2A IF=1A =1.5 IFM(A) Fig. 4: Peak reverse recovery current versus di F /dt. IRM(A) % CONFIDENCE Tj=125 o C 35. VR=4V IF=4A IF=2A IF=1A Fig. 6: Softness factor (tb/ta) versus di F /dt. Sfactor Typical values Tj=125 o C 1. IF<2xIF(av).9 VR=4V /8
4 Fig. 7: Relative variation of dynamic parameters versus junction temperature (reference Tj=125 C). Fig. 9: Transient peak forward voltage versus di F /dt Sfactor 1. IRM.75 Tj(oC) Fig. 9: Forward recovery time versus di F /dt. tfr(ns) % CONFIDENCE Tj=125 o C 5 VFr=1.1*VF max. 45 IF=IF(av) VFP(V) % CONFIDENCE Tj=125 o C IF=IF(av) /8
5 APPLICATION DATA The TURBOSWITCH is especially designed to provide the lowest overall power losses in any FREEWHEEL Mode application (Fig.A) considering both the diode and the companion transistor, thus optimizing the overall performance in the end application. The way of calculating the power losses is given below: CONDUCTION LOSSES in the diode Fig. A : FREEWHEEL MODE. TOTAL LOSSES due to the diode P = P1+ P2+ P3+ P4+ P5 REVERSE LOSSES in the diode SWITCHING TRANSISTOR Watts SWITCHING LOSSES in the diode DIODE: TURBOSWITCH SWITCHING LOSSES in the tansistor due to the diode V R t T IL F=1/T =t/t LOAD 5/8
6 APPLICATION DATA (Cont d) Fig. B: STATIC CHARACTERISTICS I Conduction losses : P1=V t.i F(AV) +R d.i F 2 (RMS) I F Rd V I VR I R VtO V F Fig. C: TURN-OFF CHARACTERISTICS I V di F/dt I RM ta tb trr = ta + tb IL TRANSISTOR di R/dt DIODE S = tb / ta Fig. D: TURN-ON CHARACTERISTICS I F t t VR V Turn-on losses : (in the transistor, due to the diode) P5 = V I S F R 2 ( ) RM 6 xdif dt VR IRM IL ( S + 2 ) F + 2 xdi dt Turn-off losses (in the diode) : P3 = V I S F R 2 RM 6 xdi dt P3 and P5 are suitable for power MOSFET and IGBT V Fp di F /dt V F I Fmax t Reverse losses : P2=V R.I R.(1-δ) Turn-on losses : P4 =.4 (V FP -V F ).I Fmax.t fr.f F F 1.1V F V F t tfr 6/8
7 PACKAGE MECHANICAL DATA DIMENSIONS REF. Millimeters Inches Min. Typ. Max. Min. Typ. Max. A C D D E F F G H L L L L L O Cooling method : by conduction (C) Recommended torque value :.8 m.n Maximum torque value : 1. m.n 7/8
8 PACKAGE DATA DOP3I ISOLATED Cooling method : by conduction (C) Recommended torque value :.8 m.n. Maximum torque value : 1. m.n. DIMENSIONS REF. Millimeters Inches Min. Typ. Max. Min. Typ. Max. A B C D E F G H K L N P R Ordering type Marking Package Weight Base qty Delivery mode STTA26P STTA26P 3.79g 3 Tube STTA26PI STTA26PI DOP3I 4.52g 12 Bulk Epoxy meets UL94,V Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 22 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. 8/8
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