BYW81G-200 BYW81P-200 / BYW81PI-200
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1 BYW81G-2 BYW81P-2 / BYW81PI-2 HIGH EFFICIENCY FS RECOVERY RECIFIER DIODES FEURES SUIED FOR SMPS VERY LOW FORWRD LOSSES NEGLIGIBLE SWICHING LOSSES HIGH SURGE CURREN CPBILIY HIGH VLNCHE ENERGY CPBILIY INSULED VERSION : Insulating voltage = 25 V RMS Capacitance = 7 pf NC D 2 P (Plastic) BYW81G-2 DESCRIPION Single chip rectifier suited for switchmode power supply and high frequency DC to DC converters. Packaged in O-22C and D²P, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. BSOLUE MXIMUM RINGS O-22C (Plastic) BYW81P-2 O-22C Ins. (Plastic) BYW81PI-2 Symbol Parameter Value Unit I F(RMS) RMS forward current 35 I F(V) verage forward current δ =.5 BYW81P c=115 C 15 BYW81PI/G c=9 C 15 I FSM Surge non repetitive forward current tp=1ms sinusoidal stg j Storage and junction temperature range 2-4to+15-4to+15 C C Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 2 V July 22 - Ed: 3E 1/6
2 BYW81P-2 / BYW81PI-2 / BYW81G-2 HERML RESISNCE Symbol Parameter Value Unit Rth (j-c) Junction to case BYW81P 2. C/W BYW81PI / G 3.5 ELECRICL CHRCERISICS SIC CHRCERISICS Symbol est Conditions Min. yp. Max. Unit I R * j = 25 C V R =V RRM 2 µ j = 1 C 1.5 m V F** j = 125 C I F =12.85 V Pulse test : * tp = 5 ms, duty cycle <2% ** tp = 38 µs, duty cycle <2% j = 125 C I F = j = 25 C I F = RECOVERY CHRCERISICS Symbol est Conditions Min. yp. Max. Unit trr j = 25 C I F =.5 I R =1 I F =1 V R = 3V Irr = ns di F /dt = -5/µs 4 tfr j = 25 C I F =1 V FR =1.1xV F tr=1ns 15 ns V FP j = 25 C I F =1 tr=1ns 2 V 2/6
3 BYW81P-2 / BYW81PI-2 / BYW81G-2 Fig. 1: verage forward power dissipation versus average forward current. Fig. 2: Peak current versus form factor. P F(av)(W) =.5 =.1 =.2 =.5 = I F(av)() =tp/ tp I M() P=1W P=2W P=3W =tp/ tp I M Fig. 3: Forward voltage drop versus forward current (maximum values). Fig. 4: Relative variation of thermal impedance junction to case versus pulse duration VFM(V) j=125 o C 1. Zth(j-c) (tp. ) = Rth(j-c).5 =.2 =.1 = Single pulse.2 IFM() =tp/ tp.1 tp(s) 1.E-3 1.E-2 1.E-1 1.E+ Fig. 5: Non repetitive surge peak forward current versus overload duration. (BYW81P) Fig. 6: Non repetitive surge peak forward current versus overload duration. (BYW81PI / BYW81G) I M() IM t =.5 t(s) c=25 o C c=75oc c=115 o C I M() c=25 o C 5 c=6oc 4 3 IM c=9oc 2 t 1 t(s) = /6
4 BYW81P-2 / BYW81PI-2 / BYW81G-2 Fig. 7: verage current versus ambient temperature. (duty cycle :.5) (BYW81P) Fig. 8: verage current versus ambient temperature. (duty cycle :.5) (BYW81PI / BYW81G) I F(av)() = =tp/ Rth(j-a)=15 tp oc/w Rth(j-a)=Rth(j-c) amb( oc) I F(av)() = =tp/ Rth(j-a)=15 tp oc/w amb( oc) Rth(j-a)=Rth(j-c) Fig. 9: Junction capacitance versus reverse voltage applied (ypical values). Fig. 1: Recovery charges versus di F /dt. C(pF) F=1Mhz j=25oc QRR(nC) 6 9%CONFIDENCE 5 IF=IF(av) 4 j=1 OC VR(V) j=25 C 2 1 dif/dt(/us) O Fig. 11: Peak reverse current versus di F /dt. Fig. 12: Dynamic parameters versus junction temperature. 3. IRM() %CONFIDENCE IF=IF(av). 1 1 j=1 O C j=25 O C dif/dt(/us) QRR;IRM[j]/QRR;IRM[j=125oC] IRM.75 QRR.5.25 j( oc) /6
5 PCGE MECHNICL D O-22C (JEDEC outline) BYW81P-2 / BYW81PI-2 / BYW81G-2 L2 F H2 G Ø I F1 Marking : ype number Cooling method : C Weight : 1.9 g L5 L9 L6 L4 Recommended torque value :.8m.N Maximum torque value : 1.m.N C D M E L7 DIMENSIONS REF. Millimeters Inches Min. Max. Min. Max C D E F F G H L typ..645 typ. L L L L L M 2.6 typ..12 typ. Diam. I PCGE MECHNICL D O-22C (isolated) B C DIMENSIONS I a2 e l2 b1 L F a1 b2 c1 c2 REF. Millimeters Inches Min. Max. Min. Max a a B b b C c c e F I L l Marking : ype number Cooling method : C Weight : 2.2 g Recommended torque value :.8m.N Maximum torque value : 1.m.N 5/6
6 BYW81P-2 / BYW81PI-2 / BYW81G-2 PCGE MECHNICL D D 2 P (Plastic) DIMENSIONS L L2 L3 E G B2 B C2 D 1 C 2 M * R V2 * FL ZONE NO LESS HN 2mm REF. Millimeters Inches Min. Max. Min. Max B B C C D E G L L L M R.4 typ..16 typ. V2 8 8 Cooling method: by conduction (method C) FOO PRIN DIMENSIONS (in millimeters) D²P Information furnished is believed to be accurate and reliable. However, SMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SMicroelectronics. Specifications mentioned in this publication are subject to change without notice. his publication supersedes and replaces all information previously supplied. SMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SMicroelectronics. he S logo is a registered trademark of SMicroelectronics 22 SMicroelectronics - Printed in Italy - ll rights reserved. SMicroelectronics GROUP OF COMPNIES ustralia - Brazil - Canada - China - Finland - France - Germany Hong ong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United ingdom - United States. 6/6
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