Obsolete Product(s) - Obsolete Product(s)

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1 BYW8F/FP- HIGH EFFICIENCY FS RECOVERY RECIFIER DIODES MIN PRODUCS CHRCERISICS FEURES Suited for SMPS Very low forward losses Negligible switching losses High surge current capability Insulated packages: ISOWC / O-FPC: Insulation voltage = V DC Capacitance = 1 pf DESCRIPION Single chip rectifier suited for Switch Mode Power Supplies and high frequency DC to DC converters. Packaged in O-C, ISOWC and O-FPC this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. O-C BYW8- ISOWC BYW8F- Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage V I F(RMS) RMS forward current I F(V) I F(V) V RRM BSOLUE MXIMUM RINGS V j (max) 15 C V F (max) trr (max).85 V 35 ns verage forward current δ =.5 I FSM Surge non repetitive forward current tp=1ms sinusoidal K K O-C c=1 C 1 ISOWC O-FPC c=95 C 1 1 stg Storage and junction temperature range - 65 to + 15 C j Maximum operating temperature range + 15 C K O-FPC BYW8FP- January - Ed: 3G 1/7

2 BYW8F/FP- HERML RESISNCE Symbol Parameter Value Unit Rth (j-c) Junction to case O-C.5 C/W ISOWC / O-FPC 4.7 ELECRICL CHRCERISICS SIC CHRCERISICS Symbol est Conditions Min. yp. Max. Unit I R * j = 5 C V R =V RRM 1 µ j = 1 C 1 m V F** j = 15 C I F =7.85 V j = 15 C I F = j = 5 C I F = Pulse test :*tp=5ms,duty cycle <% ** tp = 38 µs, duty cycle <% o evaluate the conduction losses use the following equation : P=.65xI F(V) +.7 x I F (RMS) RECOVERY CHRCERISICS Symbol est Conditions Min. yp. Max. Unit trr j = 5 C I F =.5 I R =1 I F =1 V R = 3V Irr =.5 5 ns di F /dt = -5/µs 35 tfr j =5 C I F =1 tr=1ns 15 ns V FR =1.1xV F V FP j = 5 C I F =1 tr=1ns V /7

3 BYW8F/FP- Fig. 1: verage forward power dissipation versus average forward current Fig. : Peak current versus form factor P F(av)(W) I F(av)() =tp/ tp Fig. 3: Forward voltage drop versus forward current (maximum values) VFM(V) =.5 j=15 o C =.1 =. IFM() =.5 = Fig. 5: Relative variation of thermal impedance junction to case versus pulse duration. (ISOWC / O-FPC) K 1 Zth(j-c) (tp. ) K = Rth(j-c).8 I M() =.1 =. =.5 Single pulse tp(s) =tp/ tp 1.E-3 1.E- 1.E-1 1.E+ 1.E P=1W P=5W K 1. Zth(j-c) (tp. ) K = Rth(j-c) =. =.1 =.5 Single pulse P=15W =tp/ Fig. 4: Relative variation of thermal impedance junction to case versus pulse duration (O-C) =tp/ tp.1 tp(s) 1.E-3 1.E- 1.E-1 1.E+ Fig. 6: Non repetitive surge peak forward current versus overload duration (O-C) I M() c=5 o C IM c=75 oc c=1 C 1 t =.5 t(s) tp I M 3/7

4 BYW8F/FP- Fig. 7: Non repetitive surge peak forward current versus overload duration (ISOWC / O-FPC) Fig. 8: verage current versus ambient temperature (duty cycle :.5) (O-C) I M() c=5 o C 3 IM c=5 C 1 c=95oc t =.5 t(s) Fig. 9: verage current versus ambient temperature (duty cycle:.5) (ISOWC / O-FPC) I F(av)() Rth(j-a)=Rth(j-c) Rth(j-a)=15 oc/w 6 5 = =tp/ tp amb( oc) Fig. 11: Recovery charges versus di F /dt. QRR(nC) 9% CONFIDENCE j=15 oc IF=IF(av) I F(av)() 1 11 Rth(j-a)=Rth(j-c) Rth(j-a)=15 oc/w 6 5 = =tp/ tp amb( oc) Fig. 1: Junction capacitance versus reverse voltage applied (ypical values) C(pF) VR(V) Fig. 1: Peak reverse current versus di F /dt. I RM() 9% CONFIDENCE j=15 oc IF=IF(av) dif/dt(/us) dif/dt(/us) 4/7

5 BYW8F/FP- Fig. 13: Dynamic parameters versus junction temperature QRR;IRM[j]/QRR;IRM[j=15 C] O IRM QRR j( oc) PCKGE MECHNICL D O-C (JEDEC outline) L F H G Ø I F1 L5 L9 L6 L4 C D M E L7 REF. Millimeters DIMENSIONS Inches Min. Max. Min. Max C D E F F G H L 16.4 typ..645 typ. L L L L L M.6 typ..1 typ. Diam. I /7

6 Diam BYW8F/FP- PCKGE MECHNICL D ISOWC (JEDEC outline) L F H G PCKGE MECHNICL D O-FPC L3 L H F1 L6 L3 B D E L7 L4 G1 G F F1 L6 L5 Dia D B E L7 REF. Millimeters DIMENSIONS Inches Min. Max. Min. Max B D E F F G H L 16. typ..63 typ. L L L Diam REF. DIMENSIONS Millimeters Inches Min. Max. Min. Max B D E F F G G H L 16 yp..63 yp. L L L L L Dia /7

7 BYW8F/FP- ype Marking Package Weight Base Qty Delivery mode BYW8- BYW8- O-C.3 g 5 ube BYW8F- BYW8F- ISOWC g 5 ube BYW8FP- BYW8FP- O-FPC 1.8 g 5 ube Cooling method: by conduction (C) Recommended torque value (ISOWC, O-FPC):.55 nm Maximum torque value (ISOWC, O-FPC):.7 Nm Recommended torque value (O-C):.8 Nm Maximum torque value (O-C): 1. Nm Epoxy meets UL94, V Information furnished is believed to be accurate and reliable. However, SMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SMicroelectronics. Specifications mentioned in this publication are subject to change without notice. his publication supersedes and replaces all information previously supplied. SMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SMicroelectronics. he S logo is a registered trademark of SMicroelectronics SMicroelectronics - Printed in Italy - ll rights reserved. SMicroelectronics GROUP OF COMPNIES ustralia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. 7/7