DESCRIPTION. DTV16 50 A tp = 10ms half sine wave

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1 DTVseries (CRT HORIZONTAL DEFLECTION) HIGH VOLTAGE DAMPER DIODE MAIN PRODUCTS CHARACTERISTICS IF(AV) VRRM VF 5 A to 1 A 15 V 1.3 V to 1.5 V A FEATURES AND BENEFITS K A K HIGH BREAKDOWN VOLTAGE CAPABILITY VERY FAST RECOVERY DIODE SPECIFIED TURN ON SWITCHING CHARACTERISTICS LOW STATIC AND PEAK FORWARD VOLTAGE DROP FOR LOW DISSIPATION SUITED TO 32-11kHz MONITORS AND 16kHz TV DEFLECTION INSULATED VERSION (ISOWATT22AC): Insulating voltage = 2V DC Capacitance = 12pF PLANAR TECHNOLOGY ALLOWING HIGH QUALITY AND BEST ELECTRICAL CHARACTERISTICS TO-22AC DTVxxxD DESCRIPTION ISOWATT22AC DTVxxxF High voltage diode with high current capability dedicated to horizontal deflection. is optimized to TV meanwhile to DTV11 are covering the full range of monitors from the low end to the professional hi-definition SXGA CAD display units. These devices are packaged either in TO22-AC or in ISOWATT22AC. ABSOLUTE RATINGS Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 15 V IF(RMS) RMS forward current 15 A IFSM Surge non repetitive forward current 5 A tp = 1ms half sine wave DTV11 8 Tstg Storage temperature range -65 to 15 C Tj operating junction temperature 15 C August Ed: 2B 1/1

2 THERMAL RESISTANCES Symbol Rth(j-c) Parameter Junction to case thermal resistance Value TO-22AC ISOWATT22AC Unit C/W DTV STATIC ELECTRICAL CHARACTERISTICS Value Symbol Test Conditions Tj = 25 C Tj = 125 C Unit Typ Max Typ Max VF * IF = 5 A V IF = 6 A IF = 6 A IF = 6 A IF = 6 A IF = 1 A DTV IR ** VR = VRRM µa DTV pulse test : * tp = 38 µs, δ < 2% ** tp = 5 ms, δ < 2% 2/1

3 RECOVERY CHARACTERISTICS Symbol Test Conditions Typ Max Unit trr IF = 1m A Tj = 25 C 15 ns IR = 1mA 85 IRR = 1mA DTV trr IF = 1 A Tj = 25 C 2 3 ns dif/dt =-5A/µs VR =3V DTV TURN-ON SWITCHING CHARACTERISTICS Symbol Test Conditions Typ Max Unit tfr IF = 6 A Tj = 1 C 35 ns dif/dt = 8 A/µs 57 VFR =3V DTV11 25 VFP IF = 6A Tj = 1 C V dif/dt = 8 A/µs DTV To evaluate the maximum conduction losses use the following equation : P= 1.14 x IF(AV) +.72 x IF 2 (RMS) 2 P= 69 x I F(AV) +.47 x I F (RMS) P= 1.15 x IF(AV) +.59 x IF 2 (RMS) 2 P= 6 x I F(AV) +.53 x I F (RMS) 2 P= 1 x I F(AV) +.48 x I F (RMS) DTV11 P= 1.12 x IF(AV) +.38 x IF 2 (RMS) 3/1

4 Fig. 1-1: Power dissipation versus peak forward current (triangular waveform, δ=.45). 3.5 PF(av)(W) Fig. 1-2: Power dissipation versus peak forward current (triangular waveform, δ=.45). 2. PF(av)(W) DTV Ip(A) Ip(A) Fig. 1-3: Power dissipation versus peak forward current (triangular waveform, δ=.45). 2. PF(av)(W) Ip(A) Fig. 2-1: Average current versus case temperature (δ=.5) (TO-22AC). Fig. 2-2: Average current versus case temperature (δ=.5) (ISOWATT22AC). 12 IF(av)(A) 12 IF(av)(A) 1 8 DTV DTV T 2 δ=tp/t tp Tcase( C) T 2 δ=tp/t tp Tcase( C) /1

5 Fig. 3-1: Forward voltage drop versus forward current (D/F). Fig. 3-2: Forward voltage drop versus forward current (D/F) VFM(V) VFM(V) Fig. 3-3: Forward voltage drop versus forward current (D/F). Fig. 3-4: Forward voltage drop versus forward current (D/F) VFM(V) VFM(A) Fig. 3-5: Forward voltage drop versus forward current (D/F). Fig. 3-6: Forward voltage drop versus forward current (DTV11D/F) VFM(V) VFM(V) /1

6 Fig. 4-1: Non repetitive surge peak forward current versus overload duration (TO-22AC) (D / D / D). 55 Tc=1 C 6 IM(A) 5 45 D & D D IM 1 5 t δ=.5 t(s) 1E-3 1E-2 1E-1 1E+ Fig. 4-2: Non repetitive surge peak forward current versus overload duration (ISOWATT22AC) (F / F / F). IM(A) 45 4 Tc=1 C 35 F & F 3 25 F IM 5 t δ=.5 t(s) 1E-3 1E-2 1E-1 1E+ Fig. 4-3: Non repetitive surge peak forward current versus overload duration (TO-22AC) (D / D / DTV11D). IM(A) 1 9 Tc=1 C 8 DTV11D 7 D 6 5 D 4 3 IM 2 t 1 δ=.5 t(s) 1E-3 1E-2 1E-1 1E+ Fig. 4-4: Non repetitive surge peak forward current versus overload duration (ISOWATT22AC) (F / F / DTV11F). 6 IM(A) 55 Tc=1 C DTV11F 5 45 F F IM 1 t 5 δ=.5 t(s) 1E-3 1E-2 1E-1 1E+ Fig. 5.1: Reverse recovery charges versus dif/dt (D/F) Qrr(µC) 9% confidence Fig. 5.2: Reverse recovery charges versus dif/dt. Qrr(nc) % confidence /1

7 Fig. 5.3: Reverse recovery charges versus dif/dt. 12 Qrr(nc) % confidence DTV Fig. 6.1: Reverse recovery current versus dif/dt. 3. IRM(A) % confidence Fig. 6.2: Reverse recovery current versus dif/dt. 2.2 IRM(A) % confidence DTV Fig. 6.3: Reverse recovery current versus dif/dt. 2.2 IRM(A) % confidence Fig. 7-1: Transient peak forward voltage versus dif/dt. 45 VFP(V) % confidence Fig. 7.2: Transient peak forward voltage versus dif/dt. 3 VFP(V) % confidence DTV /1

8 Fig. 8.1: Forward recovery time versus dif/dt. Fig. 8-2: Forward recovery time versus dif/dt. tfr(ns) % confidence tfr(ns) % confidence 4 DTV Fig. 9: Dynamic parameters versus junction temperature. Fig. 1: Junction capacitance versus reverse voltage applied (typical values). 1.2 VFP,IRM,Qrr[Tj]/VFP,IRM,Qrr[] 2 1 C(pF) DTV11 F=1MHz VFP IRM Qrr.2 Tj( C) VR(V) Fig. 11-1: Relative variation of thermal impedance junction to case versus pulse duration (ISOWATT22AC). Fig. 12-2: Relative variation of thermal impedance junction to case versus pulse duration (TO-22AC). K=[Zth(j-c)/Rth(j-c)] K=[Zth(j-c)/Rth(j-c)] δ =.5.5 δ =.2.5 δ =.5 δ =.2.2 δ =.1 T Single pulse tp(s) δ=tp/t tp.1 1E-2 1E-1 1E+ 1E+1.2 δ =.1 T Single pulse tp(s) δ=tp/t tp.1 1E-3 1E-2 1E-1 1E+ 8/1

9 PACKAGE DATA TO-22AC (plastic) (JEDEC outline) DIMENSIONS REF. Millimeters Inches L2 H2 Ø I L5 L6 C A L7 Min. Max. Min. Max. A C D E F F L9 F1 L4 D G H L typ..645 typ. F M E L L G L L L M 2.6 typ..12 typ. Diam. I Cooling method : c. Torque value :.55 m.n typ (.7 m.n max). 9/1

10 Diam DTVseries PACKAGE DATA ISOWATT22AC (plastic) H A B REF. DIMENSIONS Millimeters Inches Min. Typ. Max. Min. Typ. Max. A B L6 D L2 L7 E L3 F F F1 G H L L F D E L G L Diam Cooling method : C. Torque value :.55 m.n typ (.7 m.n max). Electrical isolation : 2V DC Capacitance : 12 pf Ordering code Marking Package Weight Base qty Delivery mode D D D D D DTV11D F F F F F DTV11F Epoxy meets UL94, V D D D D D DTV11D F F F F F DTV11F TO-22AC 1.86g 5 Tube ISOWATT22AC 2g 5 Tube Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. 1/1