STTA2006P/PI TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) 20A V RRM 600V. t rr (typ) 30ns. VF (max) 1.

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1 STTA26P/PI TURBOSWITCH ULTRA-FAST HIGH OLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF(A) RRM 2A 6 t rr (typ) 3ns F (max) 1.5 K FEATURES AND BENEFITS SPECIFIC TO FREEWHEEL MODE OPERA- TIONS: FREEWHEEL OR BOOSTER DIODE. ULTRA-FAST AND SOFT RECOERY. ERY LOW OERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR. HIGH FREQUENCY OPERATIONS. INSULATED PACKAGE: DOP3I Electrical insulation : 25 RMS Capacitance < 12 pf K STTA26P A Isolated DOP3I K STTA26PI A DESCRIPTION The TURBOSWITCH is a very high performance series of ultra-fast high voltage power diodes from 6 to 12. TURBOSWITCH family, drastically cuts losses in both the diode and the associated switching IGBT or MOSFET in all freewheel mode operations and is particularly suitable and efficient in Motor control freewheelapplicationsand in booster diode applications in power factor control circuitries. Packaged either in or in DOP3I, these 6 devices are particularly intended for use on 24 domestic mains. ABSOLUTE RATINGS (limiting values) Symbol Parameter alue Unit RRM Repetitive peak reverse voltage 6 RSM Non repetitive peak reverse voltage 6 I F(RMS) RMS forward current 5 A IFRM Repetitive peak forward current tp = 5 µs F = 5kHz square 27 A IFSM Surge non repetitive forward current tp=1 ms sinusoidal 18 A Tj Maximum operating junction temperature 15 C Tstg Storage temperature range -65 to 15 C TM : TURBOSWITCH is a trademark of STMicroelectronics November Ed: 3D 1/8

2 THERMAL AND POWER DATA Symbol Parameter Test conditions alue Unit Rth(j-c) P 1 P max Junction to case thermal resistance Conduction power dissipation I F(A) = 2A δ =.5 Total power dissipation Pmax = P1 + P3 (P3 = 1% P1) DOP3I DOP3I DOP3I Tc= 96 C Tc= 74 C Tc= 9 C Tc= 66 C C/W 36 W 4 W STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter Test conditions Min Typ Max Unit F * Forward voltage drop I F =2A Tj = 25 C Tj = 125 C 1.25 IR ** Reverse leakage current R =.8 x RRM Tj=25 C Tj = 125 C 2.5 to Threshold voltage Ip < 3.IA Tj = 125 C 1.15 rd Dynamic resistance 17 mω Test pulse : * tp = 38 µs, δ <2% ** tp = 5 ms, δ <2% To evaluate the maximum conduction losses use the following equation : P= to xi F(A) +rdxi F 2 (RMS) µa ma DYNAMIC ELECTRICAL CHARACTERISTICS TURN-OFF SWITCHING Symbol Parameter Test conditions Min Typ Max Unit t rr IRM Reverse recovery time Maximum reverse recovery current Tj = 25 C I F =.5 A I R = 1A Irr =.25A IF =1A dif/dt =-5A/µs R =3 3 Tj = 125 C R = 4 IF =2A di F /dt = -16 A/µs di F /dt = -5 A/µs 17.5 S factor Softness factor Tj = 125 C R = 4 I F =2A dif/dt = -5 A/µs ns A / TURN-ON SWITCHING Symbol Parameter Test conditions Min Typ Max Unit tfr Forward recovery time Tj = 25 C I F =2A, di F /dt = 16 A/µs measured at, 1.1 Fmax Fp Peak forward voltage Tj = 25 C IF =2A, dif/dt = 16 A/µs 12 6 ns 2/8

3 Fig. 1: Conduction losses versus average current. P1(W) 5 T 4 =.1 =.2 =tp/t tp 3 2 =1 =.5 1 IF(av)(A) Fig. 2: Forward voltage drop versus forward current. FM() MAXIMUM ALUES Tj=125 o C.5 IFM(A) Fig. 3: Relative variation of thermal transient impedance junction to case versus pulse duration. Fig. 4: Peak reverse recovery current versus di F /dt. IRM(A) % CONFIDENCE Tj=125 o C 35. R= IF=4A IF=2A IF=1A Fig. 5: Reverse recovery time versus dif/dt. Fig. 6: Softness factor (tb/ta) versus dif/dt. trr(ns) 25 9% CONFIDENCE Tj= o C 2 R= IF=4A 125 IF=2A IF=1A S factor Typical values Tj=125 o C 1. IF<2xIF(av).9 R= /8

4 Fig. 7: Relative variation of dynamic parameters versus junction temperature (reference Tj=125 C) S factor IRM.75 Tj(oC) Fig. 9: Transient peak forward voltage versus dif/dt. FP() % CONFIDENCE Tj=125 o C IF=IF(av) Fig. 9: Forward recovery time versus dif/dt. tfr(ns) % CONFIDENCE Tj=125 o C 5 Fr=1.1*F max. 45 IF=IF(av) /8

5 APPLICATION DATA The TURBOSWITCH is especially designed to provide the lowest overall power losses in any FREEWHEEL Mode application (Fig.A) considering both the diode and the companion transistor, thus optimizing the overall performance in the end application. The way of calculating the power losses is given below: TOTAL LOSSES due to the diode P = P1+ P2+ P3+ P4+ P5 Watts CONDUCTION LOSSES in the diode REERSE LOSSES in the diode SWITCHING LOSSES in the diode SWITCHING LOSSES in the tansistor due to the diode Fig. A : FREEWHEEL MODE. SWITCHING TRANSISTOR DIODE: TURBOSWITCH IL R t T F=1/T =t/t LOAD 5/8

6 APPLICATION DATA (Cont d) Fig. B: STATIC CHARACTERISTICS I Conduction losses : P1 = t.if(a) +Rd.IF 2 (RMS) I F Rd R I R to F Reverse losses: P2 = R.IR.(1-δ) Fig. C: TURN-OFF CHARACTERISTICS IL Turn-on losses : (in the transistor, due to the diode) I TRANSISTOR t P5 = R I RM 2 ( S ) F 6 xdi F dt R IRM IL ( S + 2 ) F + 2 x di F dt I di F/dt DIODE Turn-off losses(in the diode) : ta tb t di R/dt I RM R trr = ta + tb S = tb / ta P3 = R IRM 2 S F 6 xdi F dt P3 and P5 are suitable for power MOSFET and IGBT Fig. D: TURN-ON CHARACTERISTICS I F di F /dt I Fmax Fp F t Turn-on losses : P4 =.4 (FP -F).IFmax.tfr.F 1.1 F F t tfr 6/8

7 PACKAGE MECHANICAL DATA DIMENSIONS REF. Millimeters Inches Min. Typ. Max. Min. Typ. Max. A C D D E F F G H L L L L L O Cooling method : by conduction(c) Recommended torque value :.8 m.n Maximum torque value : 1. m.n 7/8

8 PACKAGE DATA DOP3I ISOLATED DIMENSIONS REF. Millimeters Inches Min. Typ. Max. Min. Typ. Max. A B C D E F G H K L N P R Cooling method : by conduction (C) Recommended torque value :.8 m.n. Maximum torque value : 1. m.n. Ordering type Marking Package Weight Base qty Delivery mode STTA26P STTA26P 3.79g 3 Tube STTA26PI STTA26PI DOP3I 4.52g 3 Tube Epoxy meets UL94, Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor forany infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. 8/8

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