STPS20L45CF/CW/CT/CFP/CG

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1 STPS2L45CF/CW/CT/CFP/CG LOW DROP POWER SCHOTTY RECTIFIER MAJOR PRODUCTS CHARACTERISTICS I F(AV) V RRM 2x1A 45 V Tj (max) 15 C V F (max).5 V FEATURES AND BENEFITS LOW FORWARD VOLTAGE DROP MEANING VERY SMALL CONDUCTION LOSSES LOW SWITCHING LOSSES ALLOWING HIGH FREQUENCY OPERATION INSULATED PACAGE: ISOWATT22AB, TO-22FPAB Insulating voltage = 2V DC Capacitance = 12pF AVALANCHE CAPABILITY SPECIFIED DESCRIPTION Dual center tap Schottky rectifiers designed for high frequency switched mode power supplies and DC to DC converters. These devices are intended for use in low voltage, high frequency inverters, free-wheeling and polarity protection applications. ABSOLUTE RATINGS (limiting values, per diode) D 2 PA STPS2L45CG TO-22FPAB STPS2L45CFP ISOWATT22AB STPS2L45CF TO-22AB STPS2L45CT TO-247 STPS2L45CW Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 45 V I F(RMS) RMS forward current 3 A I F(AV) Average forward TO-22AB / D 2 PA Tc = 135 C Per diode 1 A current TO-247 δ =.5 Per device 2 ISOWATT22AB Tc = 115 C Per diode 1 A TO-22FPAB δ =.5 Per device 2 I FSM Surge non repetitive forward current tp = 1 ms Sinusoidal 18 A I RRM Peak repetitive reverse current tp=2 µs square F=1kHz 1 A I RSM Non repetitive peak reverse current tp = 1 µs square 2 A P ARM Repetitive peak avalanche power tp = 1µs Tj = 25 C 4 W T stg Storage temperature range - 65 to + 15 C Tj Maximum operating junction temperature * 15 C dv/dt Critical rate of rise of reverse voltage 1 V/µs *: dptot 1 < dtj Rth( j a) July 23 - Ed: 3C thermal runaway condition for a diode on its own heatsink 1/9

2 STPS2L45CF/CW/CT/CFP/CG THERMAL RESISTANCES Symbol Parameter Value Unit R th(j-c) Junction to case ISOWATT22AB TO-22FPAB STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter Tests Conditions Min. Typ. Max. Unit I R * Reverse leakage Tj = 25 C V R =V RRM.2 ma current Tj = 125 C ma V F * Forward voltage drop Tj = 25 C I F =1A.55 V Tj = 125 C I F =1A.44.5 Tj=25 C I F =2A.73 Tj = 125 C I F =2A Pulse test : * tp = 38 µs, δ <2% To evaluate the conduction losses use the following equation : P=.28xI F(AV) +.22 I F 2 (RMS) Per diode Total Coupling R th(j-c) Junction to case TO-247 Per diode Total Coupling R th(j-c) Junction to case TO-22AB D 2 PA When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1) x R th(j-c) (Per diode) + P(diode 2) x R th(c) Per diode Total Coupling C/W C/W C/W Fig. 1: Average forward power dissipation versus average forward current (per diode) PF(av)(W) δ =.5 δ =.1 δ =.2 δ =.5 δ = 1 1 IF(av) (A) δ=tp/t tp T Fig. 2: Average forward current versus ambient temperature(δ =.5, per diode). 12 IF(av)(A) 11 TO-22AB/TO-247 Rth(j-a)=Rth(j-c) ISOWATT22AB 7 6 Rth(j-a)=15 C/W T 2 1 δ=tp/t tp Tamb( C) /9

3 STPS2L45CF/CW/CT/CFP/CG Fig. 3: Normalized avalanche power derating versus pulse duration. P ARM(t p) P ARM(1µs) 1 Fig. 4: Normalized avalanche power derating versus junction temperature. P ARM(t p) P ARM(25 C) t p(µs) T j( C) Fig. 5-1: Non repetitive surge peak forward current versus overload duration (maximum values, per diode, TO-22AB, TO-247, D 2 PA). Fig. 5-2: Non repetitive surge peak forward current versus overload duration (maximum values, per diode, ISOWATT22AB, TO-22FPAB). 14 IM(A) IM Tc=25 C Tc=75 C Tc=125 C 2 t δ=.5 t(s) 1E-3 1E-2 1E-1 1E+ 1 IM(A) IM 2 1 t δ=.5 t(s) Tc=25 C Tc=5 C Tc=1 C 1E-3 1E-2 1E-1 1E+ Fig. 6-1: Relative variation of thermal impedance junction to case versus pulse duration (TO-22AB, TO-247, D 2 PA). Fig. 6-2: Relative variation of thermal impedance junction to case versus pulse duration (ISOWATT22AB, TO-22FPAB). Zth(j-c)/Rth(j-c) Zth(j-c)/Rth(j-c).6 δ =.5.6 δ = δ =.2 δ =.1 T Single pulse tp(s) δ=tp/t tp. 1E-3 1E-2 1E-1 1E+.4 δ =.2 T δ =.1.2 Single pulse tp(s) δ=tp/t tp. 1E-3 1E-2 1E-1 1E+ 1E+1 3/9

4 STPS2L45CF/CW/CT/CFP/CG Fig. 7: Reverse leakage current versus reverse voltage applied (typical values, per diode). Fig. 8: Junction capacitance versus reverse voltage applied (typical values, per diode). 2E+2 1E+2 IR(mA) Tj=15 C 2 C(pF) F=1MHz Tj=25 C 1E+1 Tj=125 C 1 1E+ Tj=75 C 1E-1 Tj=25 C 1E-2 VR(V) 1E VR(V) Fig. 9: Forward voltage drop versus forward current (maximum values) (per diode). 1. IFM(A) Tj=125 C Typical values Tj=15 C Tj=25 C Tj=75 C VFM(V) Fig. 1: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35µm) (D 2 PA). Rth(j-a) ( C/W) S(Cu) (cm²) /9

5 STPS2L4CF/CW/CT PACAGE MECHANICAL DATA ISOWATT22AB REF. Millimeters Inches Min. Max. Min. Max. A B D E F F F G G H L2 16. typ..63 typ. L L L L Diam Cooling method : C Recommended torque value :.55 m.n Maximum torque value :.7 m.n 5/9

6 STPS2L45CF/CW/CT/CFP/CG PACAGE MECHANICAL DATA TO-22FPAB L3 L2 L4 G1 H G L6 L5 F1 F2 F Dia D A B E L7 REF. Millimeters Inches Min. Max. Min. Max. A B D E F F F G G H L2 16 Typ..63 Typ. L L L L L Dia Cooling method : C Recommended torque value :.55 m.n Maximum torque value :.7 m.n 6/9

7 STPS2L45CF/CW/CT/CFP/CG PACAGE MECHANICAL DATA TO-22AB REF. Millimeters Inches L2 F2 F1 F G1 H2 Dia G L5 L9 L6 L4 A C D M E L7 Min. Max. Min. Max. A C D E F F F G G H L typ..645 typ. L L L L L M 2.6 typ..12 typ. Diam Cooling method : C Recommended torque value :.55 m.n Maximum torque value :.7 m.n 7/9

8 STPS2L45CF/CW/CT/CFP/CG PACAGE MECHANICAL DATA D 2 PA REF. Millimeters Inches L2 E C2 A Min. Max. Min. Max. A L D B B L3 C C B2 B C R D E G G L L M * V2 L M * FLAT ZONE NO LESS THAN 2mm R.4 typ..16 typ. V2 8 8 FOOTPRINT /9

9 PACAGE MECHANICAL DATA TO-247 STPS2L45CF/CW/CT/CFP/CG V REF. Millimeters Inches L L5 V F1 V2 F(x3) H G = = F2 F3 F4 Dia. L2 L4 L1 L3 M D A E Min. Typ. Max. Min. Typ. Max. A D E F F F F F G H L L L L L L M V 5 5 V2 6 6 Dia Cooling method : C Recommended torque value :.8m.N Maximum torque value : 1.m.N Ordering type Marking Package Weight Base qty Delivery mode STPS2L45CF STPS2L45CF ISOWATT22AB 2.1g 5 Tube STPS2L45CFP STPS2L45CFP TO-22FPAB 2g 5 Tube STPS2L45CT STPS2L45CT TO-22AB 2g 5 Tube STPS2L45CW STPS2L45CW TO g 3 Tube STPS2L45CG STPS2L45CG D 2 PA 1.48g 5 Tube STPS2L45CG-TR STPS2L45CG D 2 PA 1.48g 1 Tape & Reel Epoxy meets UL94,V Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 23 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong ong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United ingdom - United States. 9/9

STPS2045CT/CF/CG/CFP/CR

STPS2045CT/CF/CG/CFP/CR STPS245CT/CF/CG/CFP/CR MAIN PRODUCT CHARACTERISTICS I F(AV) 2x1A V RRM 45 V Tj (max) 175 C V F (max).57 V FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING