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1 STPS3L4CG/CT/CW MAIN PRODUCTS CHARACTERISTICS FEATURES AND BENEFITS I F(AV) 2x15A V RRM 4 V Tj (max) 15 C V F (max).5 V VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD VOLTAGE DROP LOW THERMAL RESISTANCE AVALANCHE CAPABILITY SPECIFIED DESCRIPTION Dual ceter tap schottky rectifiers suited for Switched Mode Power Supplies ad high frequecy DC to DC coverters. Packaged i TO-247, TO-22AB ad D 2 PA these devices are iteded for use i low voltage, high frequecy iverters, free-wheelig ad polarity protectio applicatios. ABSOLUTE RATINGS (limitig values, per diode) LOW DROP POWER SCHOTTY RECTIFIER Symbol Parameter Value Uit V RRM Repetitive peak reverse voltage 4 V I F(RMS) RMS forward curret 3 A I F(AV) Average forward curret Tc = 135 C Per diode 15 A δ =.5 Per device 3 I FSM Surge o repetitive forward curret tp = 1 ms Siusoidal 22 A I RRM Repetitive peak reverse curret tp =2µs square F=1kHz 1 A I RSM No repetitive peak reverse curret tp = 1 µs square 3 A P ARM Repetitive peak avalache power tp = 1µs Tj = 25 C 6 W T stg Storage temperature rage - 65 to + 15 C Tj Maximum operatig juctio temperature * 15 C dv/dt Critical rate of rise of reverse voltage 1 V/µs TO-22AB STPS3L4CT D 2 PA STPS3L4CG TO-247 STPS3L4CW *: dptot 1 < dtj Rth( j a) July 23 - Ed: 4A thermal ruaway coditio for a diode o its ow heatsik 1/6

2 STPS3L4CG/CT/CW THERMAL RESISTANCES Symbol Parameter Value Uit R th (j-c) Juctio to case Per diode Total C/W R th (c) Couplig.1 C/W Whe the diodes 1 ad 2 are used simultaeously : Tj(diode 1) = P(diode1) x R th(j-c) (Per diode) + P(diode 2) x R th(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter Tests Coditios Mi. Typ. Max. Uit I R * Reverse leakage curret Tj = 25 C V R =V RRM 36 µa Tj = 1 C 2 5 ma V F * Forward voltage drop Tj = 25 C I F =15A.55 V Pulse test : * tp = 38 µs, δ <2% To evaluate the coductio losses use the followig equatio : 2 P =.33 x I F(AV) +.11 I F (RMS) Fig. 1: Average forward power dissipatio versus average forward curret (per diode). Tj = 125 C I F =15A.42.5 Tj = 25 C I F =3A.74 Tj = 125 C I F =3A Fig. 2: Average curret versus ambiet temperature (δ=.5) (per diode). PF(av)(W) 12 δ =.2 δ =.1 δ =.5 1 δ =.5 8 δ = T 2 δ=tp/t tp IF(av)A IF(av)(A) Rth(j-a)=Rth(j-c) Rth(j-a)=15 C/W T 2 δ=tp/t tp Tamb( C) /6

3 STPS3L4CG/CT/CW Fig. 3: Normalized avalache power deratig versus pulse duratio. Fig. 4: Normalized avalache power deratig versus juctio temperature. P ARM(t p) P ARM(1µs) 1 P ARM(t p) P ARM(25 C) Fig. 5: No repetitive surge peak forward curret versus overload duratio (maximum values) (per diode). IM(A) Tc=25 C 1 8 Tc=75 C 6 Tc=125 C 4 IM 2 t t(s) δ=.5 1E-3 1E-2 1E-1 1E+ Fig. 7: Reverse leakage curret versus reverse voltage applied (typical values) (per diode). 2E+2 IR(mA) 1E+2 Tj=15 C t p(µs) T j( C) Fig. 6: Relative variatio of thermal trasiet impedace juctio to case versus pulse duratio. 1. Zth(j-c)/Rth(j-c) δ =.5 δ =.2 δ =.1 Sigle pulse tp(s). 1.E-4 1.E-3 1.E-2 1.E-1 1.E+ C(pF) 2 δ=tp/t Fig. 8: Juctio capacitace versus reverse voltage applied (typical values) (per diode). T tp F=1MHz Tj=25 C 1E+1 1E+ Tj=1 C Tj=75 C 1 5 1E-1 Tj=25 C 2 VR(V) 1E VR(V) /6

4 STPS3L4CG/CT/CW Fig. 9: Forward voltage drop versus forward curret (maximum values) (per diode). Fig. 1: Thermal resistace juctio to ambiet versus copper surface uder tab (Epoxy prited circuit board FR4, copper thickess: 35µm) (STPS3L4CG oly). 2 IFM(A) 1 1 PACAGE MECHANICAL DATA TO-22AB L2 F2 F1 F G1 Typical values Tj=15 C Tj=25 C VFM(V) H2 Dia Tj=125 C G L5 L9 L6 L4 C D M A E L7 Rth(j-a) ( C/W) S(Cu) (cm²) DIMENSIONS REF. Millimeters Iches Mi. Max. Mi. Max. A C D E F F F G G H L typ..645 typ. L L L L L M 2.6 typ..12 typ. Diam COOLING METHOD : C RECOMMENDED TORQUE VALUE :.55 M.N MAXIMUM TORQUE VALUE :.7 M.N 4/6

5 STPS3L4CG/CT/CW PACAGE MECHANICAL DATA D 2 PA L L2 L3 E G B2 B C2 M C * A R V2 * FLAT ZONE NO LESS THAN 2mm COOLING METHOD : BY CONDUCTION (METHOD C) FOOT PRINT (i millimeters) D 2 PA D DIMENSIONS REF. Millimeters Iches Mi. Max. Mi. Max. A B B C C D E G L L L M R.4 typ..16 typ. V /6

6 STPS3L4CG/CT/CW PACAGE MECHANICAL DATA TO-247 L L5 F1 V V V2 F(x3) H G = = COOLING METHOD : C RECOMMENDED TORQUE VALUE :.8M.N MAXIMUM TORQUE VALUE : 1.M.N F2 F3 F4 L2 L1 L3 Dia. L4 M D A E DIMENSIONS REF. Millimeters Iches Mi. Typ. Max. Mi. Typ. Max. A D E F F F F F G H L L L L L L M V 5 5 V2 6 6 Dia Orderig type Markig Package Weight Base qty Delivery mode STPS3L4CT STPS3L4CT TO-22AB 2g 5 Tube STPS3L4CG STPS3L4CG D 2 PA 1.8g 5 Tube STPS3L4CG-TR STPS3L4CG D 2 PA 1.8g 5 Tape & reel STPS3L4CW STPS3L4CW TO g 3 Tube EPOXY MEETS UL94,V Iformatio furished is believed to be accurate ad reliable. However, STMicroelectroics assumes o resposibility for the cosequeces of use of such iformatio or for ay ifrigemet of patets or other rights of third parties which may result from its use. No licese is grated by implicatio or otherwise uder ay patet or patet rights of STMicroelectroics. Specificatios metioed i this publicatio are subject to chage without otice. This publicatio supersedes ad replaces all iformatio previously supplied. STMicroelectroics products are ot authorized for use as critical compoets i life support devices or systems without express writte approval of STMicroelectroics. The ST logo is a registered trademark of STMicroelectroics 23 STMicroelectroics - Prited i Italy - All rights reserved. STMicroelectroics GROUP OF COMPANIES Australia - Brazil - Caada - Chia - Filad - Frace - Germay Hog og - Idia - Israel - Italy - Japa - Malaysia - Malta - Morocco - Sigapore Spai - Swede - Switzerlad - Uited igdom - Uited States. 6/6