STPS40L15CW/CT. LOW DROP OR-ing POWER SCHOTTKY DIODE MAJOR PRODUCT CHARACTERISTICS. 2x20A 15 V Tj (max) 125 C FEATURES AND BENEFITS

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1 SPS4L5CW/C LOW DROP OR-ig POWER SCHOKY DIODE MAJOR PRODUC CHARACERISICS I F(AV) V RRM 2x2A 5 V j (max) 25 C V F (max).33 V A A2 K FEAURES AND BENEFIS VERY LOW FORWARD VOLAGE DROP FOR LESS POWER DISSIPAION AND REDUCED HEASINK SIZE REVERSE VOLAGE SUIED O OR-ig OF 3V, 5V ad 2V RAILS AVALANCHE CAPABILIY SPECIFIED DESCRIPION Dual ceter tap schottky rectifier packaged i O-22AB ad O-247, this device is especially iteded for use as OR-ig diode i fault tolerat power supply equipmets. O-22AB SPS4L5C A K A2 A2 K A O-247 SPS4L5CW ABSOLUE RAINGS (limitig values, per diode) Symbol Parameter Value Uit V RRM Repetitive peak reverse voltage 5 V I F(RMS) RMS forward curret 3 A I F(AV) Average forward curret case = 4 C otal 4 A δ = Per diode 2 I FSM Surge o repetitive forward curret tp = ms Siusoidal 3 A I RRM Peak repetitive reverse curret tp =2µs F=kHz 2 A I RSM No repetitive peak reverse curret tp = µs 3 A P ARM Repetitive peak avalache power tp = µs j = 25 C 34 W stg Storage temperature rage -65 to+5 C j Maximum operatig juctio temperature * 25 C dv/dt Critical rate of rise of reverse voltage V/µs *: dptot < dj Rth( j a) thermal ruaway coditio for a diode o its ow heatsik July 23 - Ed: 5A /5

2 SPS4L5CW/C HERMAL RESISANCES Symbol Parameter Value Uit R th (j-c) Juctio to case Per diode.6 C/W otal.85 R th (c) Couplig. C/W SAIC ELECRICAL CHARACERISICS (Per diode) Symbol Parameter ests Coditios Mi. yp. Max. Uit I R * Reverse leakage j = 25 C V R =V RRM 6 ma curret j = C 2 5 V F * Forward voltage drop j = 25 C I F =9A.4 V I F =4A.52 j = 25 C I F =9A j = 25 C I F =4A.42.5 Pulse test : * tp = 38 µs, δ <2% o evaluate the coductio losses use the followig equatio : P=.8xI F(AV) +.8 I F 2 (RMS) Fig. : Average forward power dissipatio versus average forward curret (per diode). 8 PF(av)(W) δ =.5 δ =. δ =.2 δ =.5 δ = IF(av) (A) δ=tp/ tp Fig. 3: Normalized avalache power deratig versus pulse duratio. P ARM(t p) P ARM(µs) Fig. 2: Average forward curret versus ambiet temperature (δ=, per diode). IF(av)(A) 22 2 Rth(j-a)=Rth(j-c) Rth(j-a)=5 C/W δ=tp/ tp amb( C) Fig. 4: Normalized avalache power deratig versus juctio temperature. P ARM(t p) P ARM(25 C) t p(µs).2 j( C) /5

3 SPS4L5CW/C Fig. 5: No repetitive surge peak forward curret versus overload duratio (maximum values per diode). IM(A) IM t δ=.5 t(s) c=5 C c=75 C c= C E-3 E-2 E- E+ Fig. 6: Relative variatio of thermal impedace juctio to case versus pulse duratio (per diode) Zth(j-c)/Rth(j-c) δ =.5 δ =.2 δ =. Sigle pulse tp (s) δ=tp/..e-4.e-3.e-2.e-.e+ tp Fig. 7: Reverse leakage curret versus reverse voltage applied (typical values per diode). Fig. 8: Juctio capacitace versus reverse voltage applied (typical values per diode). 5E+2 IR(mA) j= C E+2 5. C(F) F=MHz E+. E+ VR(V) E VR(V) Fig. 9: Forward voltage drop versus forward curret (typical values per diode). 2.. IFM(A) j=5 C Fig. : Forward voltage drop versus forward curret (typical maximum per diode). 2 IFM(A) j= C.. j=75 C VFM(V) VFM(V) /5

4 SPS4L5CW/C PACKAGE MECHANICAL DAA O-22AB DIMENSIONS REF. Millimeters Iches L2 F2 F F G H2 Dia G L5 L9 L6 L4 A C D M E L7 Mi. Max. Mi. Max. A C D E F F F G G H L2 6.4 typ..645 typ. L L L L L M 2.6 typ..2 typ. Diam Coolig method: C Recommeded torque value:.55 m.n Maximum torque value:.7 m.n 4/5

5 SPS4L5CW/C PACKAGE MECHANICAL DAA O-247 DIMENSIONS V REF. Millimeters Iches Mi. yp. Max. Mi. yp. Max. L L5 V F V2 F(x3) H G = = F2 F3 F4 Dia. L2 L4 L L3 M D A E A D E F F 3..8 F F F G H L L L L L L M V 5 5 V2 6 6 Dia Coolig method: C Recommeded torque value:.8 m.n Maximum torque value:. m.n Orderig type Markig Package Weight Base qty Delivery mode SPS4L5CW SPS4L5CW O g. 3 ube SPS4L5C SPS4L5C O-22AB 2g 5 ube Epoxy meets UL94,V Iformatio furished is believed to be accurate ad reliable. However, SMicroelectroics assumes o resposibility for the cosequeces of use of such iformatio or for ay ifrigemet of patets or other rights of third parties which may result from its use. No licese is grated by implicatio or otherwise uder ay patet or patet rights of SMicroelectroics. Specificatios metioed i this publicatio are subject to chage without otice. his publicatio supersedes ad replaces all iformatio previously supplied. SMicroelectroics products are ot authorized for use as critical compoets i life support devices or systems without express writte approval of SMicroelectroics. he S logo is a registered trademark of SMicroelectroics 23 SMicroelectroics - Prited i Italy - All rights reserved. SMicroelectroics GROUP OF COMPANIES Australia - Brazil - Caada - Chia - Filad - Frace - Germay Hog Kog - Idia - Israel - Italy - Japa - Malaysia - Malta - Morocco - Sigapore Spai - Swede - Switzerlad - Uited Kigdom - Uited States. 5/5