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1 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR STMicroelectroics PREFERRED SALES TYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED FULLY CHARACTERISEZ AT 125 o C LOW SPREAD OF DYNAMIC PARAMETERS Figure 1: Package APPLICATIONS ELECTRONIC BALLAST FOR FLUORESCENT LIGHTING SWITCH MODE POWER SUPPLIES TO-220 Figure 2: Iteral Schematic Diagram DESCRIPTION The device is maufactured usig high voltage Multi-Epitaxial Mesa techology for cost-effective high performace. It uses a Hollow Emitter structure to ehace switchig speeds. The BUL series is desiged for use i lightig applicatios ad low cost switch-mode power supplies. Table 1: Order Codes Part Number Markig Package Packagig A or (#) B TO-220 Tube # See:ote o page 2 Table 2: Absolute Maximum Ratigs Symbol Parameter Value Uit V CES Collector-Emitter Voltage (V BE = 0) 1600 V V CEO Collector-Emitter Voltage (I B = 0) 800 V V EBO Emitter-Base Voltage (I C = 0) 9 V I C Collector Curret 6 A I CM Collector Peak Curret (t p < 5ms) 9 A I B Base Curret 5 A I BM Base Peak Curret (t p < 5ms) 8 A P tot Total Dissipatio at T C = 25 o C 110 W T stg Storage Temperature -65 to 150 C Jauary 2005 Rev. 3 1/8
2 Symbol Parameter Value Uit T J Max. Operatig Juctio Temperature 150 C Table 3: Thermal Data R thj-case Thermal Resistace Juctio-Case Max R thj-amb Thermal Resistace Juctio-Ambiet Max o C/W o C/W Table 4: Electrical Characteristics (T case = 25 o C uless otherwise specified) Symbol Parameter Test Coditios Mi. Typ. Max. Uit I CES Collector Cut-off Curret V CE = 1600 V 100 µa (V BE =0 V) V CE = 1600 V T j = 125 o C 500 µa I CEO Collector Cut-off Curret V CE = 800 V 250 µa (I B = 0) V CEO(sus) * V EBO V CE(sat) * Collector-Emitter Sustaiig Voltage (I B = 0 ) Emitter-Base Voltage (I C = 0 ) Collector-Emitter Saturatio Voltage * Pulsed: Pulsed duratio = 300 ms, duty cycle 1.5 %. I C = 100 ma L = 25 mh 800 V I E = 10 ma 9 V I C = 2 A I C = 4 A I B = 0.4 A I B = 1.33 A V BE(sat) * Base-Emitter Saturatio I C = 2 A I B = 0.4 A Voltage I C = 4 A I B = 1.33 A h FE * DC Curret Gai I C = 10 ma V CE = 5 V I C = 0.7 A V CE = 5 V Group A Group B INDUCTIVE LOAD I C = 3 A I B1 = 1 A t s Storage Time V BE(off) = -5 V R BB = 0 W t f Fall Time V clamp = 200 V L = 200 µh (see figure 12) INDUCTIVE LOAD I C = 3 A I B1 = 1 A t s Storage Time V BE(off) = -5 V R BB = 0 W t f Fall Time V clamp = 200 V L = 200 µh T j = 100 o C (see figure 12) # Note: Product is pre-selected i DC curret gai (Group A ad Group B). STMicroelectroics reserves the right to ship either groups accordig to productio availability. Please cotact your earest STMicrolectroics sales office for delivery datails V V V V µs s µs s 2/8
3 Figure 3: Safe Operatig Area Figure 6: Deratig Curve Figure 4: DC Curret Gai Figure 7: DC Curret Gai Figure 5: Collector-Emitter Saturatio Voltage Figure 8: Base-Emitter Saturatio Voltage 3/8
4 Figure 9: Iductive Load Fall Time Figure 11: Resistive Load Stoarage Time Figure 10: Reverse Biased SOA 4/8
5 Figure 12: Iductive Load Switchig Test Circuit 1) Fast electroic switch 2) No-iductive Resistor 3) Fast recovery rectifier 5/8
6 TO-220 MECHANICAL DATA DIM. mm. ich MIN. TYP MAX. MIN. TYP. MAX. A b b c D E e e F H J L L L L øp Q /8
7 Table 5: Versio Release Date Chage Desigator 14-Ja First Release. 09-Sep Secod Release. 26-Ja Third Release. 7/8
8 Iformatio furished is believed to be accurate ad reliable. However, STMicroelectroics assumes o resposibility for the cosequeces of use of such iformatio or for ay ifrigemet of patets or other rights of third parties which may result from its use. No licese is grated by implicatio or otherwise uder ay patet or patet rights of STMicroelectroics. Specificatios metioed i this publicatio are subject to chage without otice. This publicatio supersedes ad replaces all iformatio previously supplied. STMicroelectroics products are ot authorized for use as critical compoets i life support devices or systems without express writte approval of STMicroelectroics. The ST logo is a registered trademark of STMicroelectroics All other ames are the property of their respective owers 2005 STMicroelectroics - All Rights Reserved STMicroelectroics group of compaies Australia - Belgium - Brazil - Caada - Chia - Czech Republic - Filad - Frace - Germay - Hog Kog - Idia - Israel - Italy - Japa - Malaysia - Malta - Morocco - Sigapore - Spai - Swede - Switzerlad - Uited Kigdom - Uited States of America 8/8
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