DARLINGTON POWER TRANSISTORS NPN

Transcription

1 TO-5 TO-5 - Google 08//9 : TO-5 DARLINGTON POWER TRANSISTORS NPN Silico DESCRIPTION The STCompoet is a NPN silico epitaxial trasistor. It is maufactured i moolithic Darligto cofiguratio. The resultig trasistor show exceptioal high gai performace coupled with very low saturatio voltage. It is desiged for TO-5 geeral-purpose amplifier ad low frequecy switchig applicatios. TO-0 TO-5 TO-5 TO-0 Figure : Iteral Schematic Diagram Collector FEATURES ed=0ahukewjjl8w_wopyahwjjlwkhybkakwqsaqilw&biw= Collector- Voltage, VCE = 80V High Collector Curret, IC = 0A Low Collector- Saturatio Voltage Six Curret Gai Selectios DEVICE SUMMARY hfe Rage () Package Type k TO-5 Tapig reel A k ~ k TO-5 Tapig reel B K ~ 4K TO-5 Tapig reel C 4k ~ 5k TO-5 Orderig Code Markig () Shippig YM Tapig reel D 5k ~ 6k TO-5 TIP Tapig reel YM E 6K ~ 7K TO-5 Tapig reel F 7k ~ 9k TO-5 Tapig reel : Iteral Schem Figure Note : DC curret IC = A, VCE = 4V. Pulse duratio = 00µs, duty cycle.5%. Collector Note : Y: Year expressio. M: Moth expressio. V.0 Collector of 5

2 ABSOLUTE MAXIMUM RATINGS T A = 5 C, uless otherwise specified. () PARAMETER SYMBOL RATINGS UNIT Collector- Voltage V CBO 80 V Collector- Voltage V CEO 80 V - Voltage V EBO 5 V Collector Curret (DC) I C 0 A Collector Peak Curret (4) I CM 5 A Curret (DC) I B 500 ma Total Power T C 5 C P C T A 5 C.75 W Maximum Juctio Temperature T JMAX 50 C Storage Temperature Rage T stg -55 ~ +50 C Solderig Temperature & Time T solder 60 C, 0 sec. Note : Absolute Maximum Ratigs are stress ratigs oly ad fuctioal device operatio is ot implied. The device could be permaetly damaged beyod absolute maximum ratigs. Note 4:PW 0ms, duty cycle 50%. Thermal Data PARAMETER SYMBOL RATINGS UNIT Thermal Resistace, Juctio-to-Case R θjc 6.5 C/W Thermal Resistace, Juctio-to-Ambiet R θja 74 C/W V.0 of 5

3 ELECTRICAL CHARACTERISTICS T A = 5 C, uless otherwise oted. PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector- Breakdow Voltage V (BR)CEO I B = 0, I C = 0mA 80 V Collector- Breakdow Voltage V (BR)CBO I E = 0, I C = 00µA 80 V - Breakdow Voltage V (BR)EBO I C = 0, I E = 0mA 5 V Collector Cut-Off Curret V BE = 0 I CES V CE = 80V 00 µa I B = 0 I CBO V CE = 80V 00 µa Cut-Off Curret I EBO V EB = 5V, I C = 0 0 ma DC Curret Gai (5) h FE() V CE = 4V, I C = 0mA k 9k h FE() V CE = 4V, I C = 5A k 9k h FE() V CE = 4V, I C = 0A k 9k Collector- Saturatio Voltage (5) I C = A, I B = 0mA. V CE(sat) I C = 4A, I B = 6mA V I C = 0A, I B = 40mA 4 - Saturatio Voltage (5) V BE I C = 4A, I B = 6mA.5 V Note 5:Pulse duratio = 00µs, duty cycle.5%. CLASSIFICATION OF h FE() RANK A B C D E F h FE() RANGE k ~ k k ~ 4k 4k ~ 5k 5k ~ 6k 6k ~ 7k 7k ~ 9k V.0 of 5

4 ELECTRICAL CHARACTERISTICS CURVES Figure : DC Curret Gai DC Curret Gai V CE = 4V PW=00µs, duty cycle < %.0 Collector Curret (A) T C =-40 C T C =5 C T C =00 C 0 Figure : V CE(sat) vs. I C Collector- Saturatio Voltage (V) PW=00µs, duty cycle < % I C /I B = 00 T J = -40 C T C = -40 C T J = T5 C C = 5 C T C J = 00 C 5 C.0 0 Collector Curret (A) Figure 4: V BE(sat) vs. I C - O Voltage (V) T C = -40 C T C = 5 C T C = 00 C I C /I B = 00 PW=00µs, duty cycle < %.0 0 Collector Curret (A) Figure 5: Deratig Curve Total Power Dissipatio (W) Case Temperature ( C) 75 V.0 4 of 5

5 PACKAGE DIMENSION TO-5 Uit: Iches [Millimeters] NOTICE Iformatio furished by STCompoet is believed to be accurate ad reliable. However, o resposibility is assumed for its use. Customers are resposible for their products ad applicatios usig STCompoet compoets. To miimize the risks associated with customer products ad applicatios, customers should provide adequate desig ad operatig safeguards. STCompoet reserves the right to make chages to their products or specificatio without otice. Customers are advised to obtai the latest versio of relevat iformatio to verify, before placig orders, that iformatio beig relied o is curret ad complete. V.0 5 of 5