PNT723T503E0-2 High EB High DC gain Ultra-Small package switch transistor
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1 Feature This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. Package: SOT-723 Emitter -Base Breakdown Voltage 11V High DC current gain typical 38 Low Saturation Voltage 8mv.15 continuous collector current NPN switch transistor 1 - Base 3 - Collector 2 - Emitter Mechanical Characteristics Lead finish:% matte Sn(Tin) Mounting position: Any Qualified max reflow temperature:26 Device meets MSL 1 requirements Pure tin plating: 7 ~ 17 um Pin flatness: 3mil Electrical characteristics per line@25 ( unless otherwise specified) Parameter Symbol Value Units Collector-Emitter Breakdown Voltage V (BR)CEO 5 V Collector-Base Breakdown Voltage V (BR)CBO 8 V Emitter -Base Breakdown Voltage V (BR)EBO 11 V Collector Current I C.15 A Total C P tot.15 W Storage Temperature T stg -65~15 C Max. Operating Junction Temperature T j 15 C Rev.6 1
2 Absolute maximum Parameter Symbol Conditions Min. Typ. Max. Units Collector-Base Breakdown Voltage BV CBO I C =5uA 8 V Collector-Emitter Breakdown Voltage BV CEO I C =1mA 5 V Emitter-Base Breakdown Voltage BV EBO I E =5uA 11 V Collector Cut-off Current (I E =) I CBO V CB =6V.1 μa Emitter Cut-off Current(I C =) I EBO V EB =7V.1 μa DC Current Gain h FE I C =1mA,V CE =6V Collector-Emitter Saturation Voltage V CE(sat) I C =5mA,I B =5mA -.8 V Transition frequency f T V CE =12V,I E =-2mA,f=MHz 2 MHz Output Capacitance Cob V CE =12V,I E =ma,f=1mhz pf Typical Characteristics h FE % Of Rated Power V CE =1V Fig1.DC Current Gain Ambient Temperature - T A ( C) Fig2. Power Derating Curve V CE(SAT) V BE(SAT) hfe= Fig 3.Collector-Emitter Saturation Voltage hfe= Fig4. Base-Emitter Saturation Voltage Rev.6 2
3 T(ns) T(ns) 5 h FE =5 5 h FE =5 4 3 td Tp=4us 4 3 ts Tp=4us 2 tr 2 tf h FE = Fig 5.Switching Times Resistive Load h FE = Fig6. Switching Times Resistive Load Solder Reflow Recommendation Peak Temp=257, Ramp Rate=.82deg. /sec Time (sec) Rev.6 3
4 Product dimension (SOT-723) R.1-R.15 9 (4x) Side View.437±.13 (.11) 1.2±.3.8±.25 Bottom View 1.2±.25 (.4) (.2) (2) (1) (3) Unit:mm Unit:mm Ordering information Device Package Shipping SOT-723 (Pb-Free) / Tape & Reel Rev.6 4
5 IMPORTANT NOTICE and are registered trademarks of Prisemi Electronics Co., Ltd (Prisemi),Prisemi reserves the right to make changes without further notice to any products herein. Prisemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Prisemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in Prisemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. Prisemi does not convey any license under its patent rights nor the rights of others. The products listed in this document are designed to be used with ordinary electronic equipment or devices, Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. Website: For additional information, please contact your local Sales Representative. Copyright 29, Prisemi Electronics is a registered trademark of Prisemi Electronics. All rights are reserved. Rev.6 5
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YM ADVANCE INFORMATION 40V COMPLEMENTARY MEDIUM POWER TRANSISTOR IN SOT26 Features NPN + PNP Combination BV CEO > 40 (-40)V BV ECO > 6 (-3)V M = 9 (-9)A Peak Pulse Current V CE(sat) < 60 (-90)mV @ 1A R
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
DATA SHEET. BC847BVN NPN/PNP general purpose transistor DISCRETE SEMICONDUCTORS Nov 07. Product specification Supersedes data of 2001 Aug 30
DISCRETE SEMICONDUCTORS DATA SHEET M3D744 NPN/PNP general purpose transistor Supersedes data of 2001 Aug 30 2001 Nov 07 FEATURES 300 mw total power dissipation Very small 1.6 mm x 1.2 mm ultra thin package
UNISONIC TECHNOLOGIES CO., LTD PN2222A NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD PN2222A NPN GENERAL PURPOSE AMPLIFIER FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. ORDERING INFORMATION
NSVF5501SK RF Transistor for Low Noise Amplifier
RF Transistor for Low Noise Amplifier 10 V, 70 ma, f T =. GHz typ. RF Transistor This RF transistor is designed for RF amplifier applications. SSFP package is contribute to down size of application because
Obsolete Product(s) - Obsolete Product(s)
High gain Low Voltage PNP power transistor Features Very low Collector to Emitter saturation voltage D.C. Current gain, h FE >100 1.5 A continuous collector current Applications Power management in portable
45 V, 800 ma PNP general-purpose transistor. General-purpose switching and amplification. Symbol Parameter Conditions Min Typ Max Unit
Rev. 1 21 April 217 Product data sheet 1 General description 2 Features and benefits 3 Applications PNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
PPMT12V4 P-Channel MOSFET
P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D(3) MOSFET Product Summary V DS (V) R DS(on) (Ω) I D (A) -2 0.045 @ V GS =-4.5V -4.3 G() S(2)
NSS40201LT1G NSV40201LT1G. 40 V, 2.0 A, Low V CE(sat) NPN Transistor. 40 VOLTS, 2.0 AMPS NPN LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 44 m
NSS42LTG, NSV42LTG 4 V, 2. A, Low V CE(sat) NPN Transistor ON Semiconductor s e 2 PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage
NSS12200WT1G. 12 V, 2 A, Low V CE(sat) PNP Transistor. 12 VOLTS 2.0 AMPS PNP LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 163 m
NSS22WTG 2, 2 A, Low CE(sat) PNP Transistor ON Semiconductor s e 2 PowerEdge family of low CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage ( CE(sat) ) and
Order codes Marking Package Packaging 2STF SOT-89 2STN2550 N2550 SOT-223. November 2008 Rev 1 1/8
2STF2550 2STN2550 Low voltage high performance PNP power transistors Preliminary Data Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Surface
MMBT6428LT1G MMBT6429LT1G NSVMMBT6429LT1G. Amplifier Transistors. NPN Silicon
MMBT648LTG, MMBT649LTG, NSVMMBT649LTG Amplifier Transistors NPN Silicon Features NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ Qualified and
BC856BDW1T1, BC857BDW1T1 Series, BC858CDW1T1 Series
BC856BDW1T1, BC857BDW1T1 Series, BC858CDW1T1 Series Preferred Devices Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed
BCR129 BCR129S BCR129W
BCR9... NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R = kω) BCR9S: Two internally isolated transistors with good matching in one