Type Marking Pin Configuration Package BCR08PN WFs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
|
|
|
- Joseph Harrison
- 5 years ago
- Views:
Transcription
1 BCR8PN NPN/PNP Silicon Digital Transistor Array Switching circuit, inverter, interface circuit, driver circuit Two (galvanic) internal isolated NPN/PNP Transistors in one package Built in bias resistor NPN and PNP (R =. kω, R =47 kω) Pb-free (RoHS compliant) package Qualified according AEC Q TR C B E R R R TR R Tape loading orientation E B C EHA776 Top iew Ws Direction of Unreeling Marking on SOT-6 package (for example Ws) corresponds to pin of device Position in tape: pin opposite of feed hole side EHA79 Type Marking Pin Configuration Package BCR8PN WFs =E =B =C 4=E 5=B 6=C SOT6 Maximum Ratings for NPN and PNP Types Parameter Symbol alue Unit Collector-emitter voltage CEO 5 Collector-base voltage CBO 5 Input forward voltage i(fwd) Input reverse voltage i(rev) 5 DC collector current ma Total power dissipation, T S = 5 C P tot 5 mw Junction temperature T j 5 C Storage temperature T stg Thermal Resistance Junction - soldering point ) R thjs 4 K/W For calculation of RthJA please refer to Application Note AN77 (Thermal Resistance Calculation) -7-8
2 BCR8PN Electrical Characteristics at T A =5 C, unless otherwise specified Parameter Symbol alues Unit min. typ. max. DC Characteristics for NPN and PNP Types Collector-emitter breakdown voltage (BR)CEO = µa, I B = Collector-base breakdown voltage (BR)CBO = µa, I E = Collector cutoff current BO - - na CB = 4, I E = Emitter cutoff current I EBO µa EB = 5, = DC current gain ) h FE = 5 ma, CE = 5 Collector-emitter saturation voltage) CEsat - -. = ma, I B =.5 ma Input off voltage i(off) = µa, CE = 5 Input on oltage i(on).5 -. = ma, CE =. Input resistor R.5..9 kω Resistor ratio R /R AC Characteristics for NPN and PNP Types Transition frequency = ma, CE = 5, f = MHz Collector-base capacitance CB =, f = MHz f T MHz C cb - - pf ) Pulse test: t < µs; D < % -7-8
3 BCR8PN NPN Type DC Current Gain h FE = f ( ) CE = 5 (common emitter configuration) Collector-Emitter Saturation oltage CEsat = f ( ), /I B =.5.4 hfe -4 C - CEsat C A A - Input on oltage i(on) = f ( ) CE =. (common emitter configuration) Input off voltage i(off) = f ( ) CE = 5 (common emitter configuration) i(on) -4 C - i(off) -4 C A A
4 BCR8PN PNP Type DC Current Gain h FE = f ( ) CE = 5 (common emitter configuration) Collector-Emitter Saturation oltage CEsat = f ( ), /I B =.5.4 hfe hfe C C A A - Input on oltage i(on) = f ( ) CE =. (common emitter configuration) Input off voltage i(off) = f ( ) CE = 5 (common emitter configuration) i(on) -4 C - i(off) -4 C A A
5 BCR8PN Total power dissipation P tot = f (T S ) mw 5 5 Ptot C 5 T S Permissible Pulse Load R thjs = f (t p ) Permissible Pulse Load P totmax / P totdc = f (t p ) RthJS K/W D = Ptotmax / PtotDC - D = s t p s t p 5-7-8
6 Package SOT6 BCR8PN Package Outline ± x. M. MAX...9 ±. A Pin marking ±.. MIN Foot Print Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Manufacturer 5, June Date code (Year/Month) Pin marking Laser marking BCR8S Type code Standard Packing Reel ø8 mm =. Pieces/Reel Reel ø mm =. Pieces/Reel For symmetric types no defined Pin orientation in reel ±.. M A Pin marking
7 BCR8PN Edition 9--6 Published by Infineon Technologies AG 876 Munich, Germany 9 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (< Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered
BCR129 BCR129S BCR129W
BCR9... NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R = kω) BCR9S: Two internally isolated transistors with good matching in one
BCR BCR183 BCR183W BCR183S BCR183U. Type Marking Pin Configuration Package BCR183 BCR183S BCR183U SOT23 SOT363 SC74 SOT323.
BCR8... PNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R = kω, R = kω) BCR8S / U: Two internally isolated transistors with good matching
BCR Type Marking Pin Configuration Package BCR133 BCR133S BCR133W Pb-containing package may be available upon special request C 3
BCR... NPN Silicon Digital Transistor Switching in circuit, inverter, interface circuit, drive circuit Built in bias resistor (R = kω, R = kω) BCRS: Two internally isolated transistors with good matching
Type Marking Pin Configuration Package BCR112 BCR112W 1=B 1=B 2=E 2=E 3=C 3=C
BCR... NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R =4.7kΩ, R =4.7kΩ) Pbfree (RoHS compliant) package Qualified according AEC
BCR BCR108/F BCR108T/W BCR108S. Type Marking Pin Configuration Package BCR108 BCR108F 2=E 2=E SOT23 TSFP-3 BCR108S BCR108W 3=C 3=C - - 1=B 1=B
BCR8... NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R =. kω, R =47 kω) BCR8S: Two internally isolated transistors with good matching
BCR BCR112/F BCR112W. Type Marking Pin Configuration Package BCR112 BCR112F BCR112W. WFs WFs WFs 3=C 3=C 3=C 2=E 2=E 2=E - - -
BCR... NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R =4.7kΩ, R =4.7kΩ) BCRU: Two internally isolated transistors with good matching
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
NPN Silicon RF Transistor* For low-distortion broadband output amplifier stages in antenna and telecommunication systems up to GHz at collector currents from 0 ma to 50 ma Power amplifiers for DECT and
Type Marking Pin Configuration Package BCR139F BCR139L3 BCR139T 2=E 2=E 2=E 1=B 1=B 1=B 3=C 3=C 3=C
BCR9... NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R = kω) BCR9F/L BCR9T C R B E EH764 Type Marking Pin Configuration Package
BFG235. NPN Silicon RF Transistor*
NPN Silicon RF Transistor* For low-distortion broadband output amplifier stages in antenna and telecommunication systems up to GHz at collector currents from 0 ma to 50 ma 4 3 Power amplifiers for DECT
Type Marking Pin Configuration Package BCR405U L5s 1 = GND 2;3;5 = I out 4 = V S 6 = R ext SC74
LED Driver Supplies stable bias current even at low battery voltage Ideal for stabilizing bias current of LEDs Negative temperature coefficient protects 4 5 6 3 LEDs against thermal overload Suitable for
BFP420. NPN Silicon RF Transistor
NPN Silicon RF Transistor For high gain low noise amplifiers For oscillators up to GHz Noise figure F =. at. GHz outstanding G ms = at. GHz Transition frequency f T = 5 GHz Gold metallization for high
BCR401R LED Driver Features Applications General Description
LED Driver Features LED drive current of ma Output current adjustable up to 60mA with external resistor Supply voltage up to 8V Easy paralleling of drivers to increase current Low voltage overhead of.v
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
NPN Silicon RF Transistor For IF amplifiers in TVsat tuners and for VCR modulators Pbfree (RoHS compliant) package 1) Qualified according AEC Q101 1 2 ESD (Electrostatic discharge) sensitive device, observe
Type Marking Pin Configuration Package BFR92P GFs 1=B 2=E 3=C SOT23
NPN Bipolar RF Transistor For broadband amplifiers up to 2 GHz and fast nonsaturated switches at collector currents from 0.5 ma to 20 ma 3 1 2 Pbfree (RoHS compliant) package Qualification report according
Type Marking Pin Configuration Package BFP520F APs 1=B 2=E 3=C 4=E - - TSFP-4
Low Noise Silicon Bipolar RF Transistor For highest gain and low noise amplifier Outstanding Gms = 22.5 db at 1.8 GHz Minimum noise figure NF min = 0.95 db at 1.8 GHz For oscillators up to 15 GHz Transition
BCR401U. LED Driver Features LED drive current of 10mA Output current adjustable up to 65mA with external resistor 4 5. Supply voltage up to 40V
BCRU LED Driver Features LED drive current of Output current adjustable up to 5 with external resistor 5 3 Supply voltage up to V Easy paralleling of drivers to increase current Low voltage overhead of.v
Type Marking Pin Configuration Package BFP196 RIs 1 = C 2 = E 3 = B 4 = E - - SOT143
Low Noise Silicon Bipolar RF Transistor For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to.5 GHz at collector currents from 4 3 0 ma to 80 ma Power amplifier
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
BFP7 NPN Silicon Germanium RF Transistor High gain ultra low noise RF transistor Provides outstanding performance for a wide range of wireless applications up to GHz and more Ideal for CDMA and WLAN applications
Type Marking Pin Configuration Package BFP540ESD AUs 1=B 2=E 3=C 4=E - - SOT343
BFPESD Low Noise Silicon Bipolar RF Transistor For ESD protected high gain low noise amplifier High ESD robustness typical value V (HBM) Outstanding G ms =. db @.8 GHz Minimum noise figure NF min =.9 db
Type Marking Pin Configuration Package BFR193 RCs 1 = B 2 = E 3 = C SOT23
Low Noise Silicon Bipolar RF Transistor For low noise, highgain amplifiers up to 2 GHz For linear broadband amplifiers f T = 8 GHz, NF min = 1 db at 900 MHz Pbfree (RoHS compliant) package Qualification
BAT68... Silicon Schottky Diodes For mixer applications in the VHF / UHF range For high-speed switching applications Pb-free (RoHS compliant) package
Silicon Schottky Diodes For mixer applications in the VHF / UHF range For high-speed switching applications Pb-free (RoHS compliant) package BAT68 BAT68- BAT68-W BAT68-6 BAT68-6W BAT68-7W BAT68-8S!!! "!
For broadband amplifiers up to 1 GHz at collector currents from 1 ma to 20 ma For mixers and oscillators in sub-ghz applications
Features Maximum collector-emitter voltage V CE0 = 15 V Maximum collector current I C = 25 ma Noise figure NF = 3.5 db 3rd order output intercept point OIP 3 = 21.5 dbm 1 db output compression point P
BF776. High Performance NPN Bipolar RF Transistor
High Performance NPN Bipolar RF Transistor High performance low noise amplifier Low minimum noise figure of typ. 0.8 db @ 1.8 GHz For a wide range of non automotive applications such as WLAN, WiMax, UWB,
Type Marking Pin Configuration Package BCR400W W4s 1=GND/E NPN 2=Contr/B NPN 3V S 4=Rext/C NPN SOT343
BCRW Active Bias Controller Characteristics Supplies stable bias current even at low battery voltage and extreme ambient temperature variation Low voltage drop of.7v Application notes Stabilizing bias
Type Marking Pin Configuration Package BFP540 ATs 1=B 2=E 3=C 4=E - - SOT343
BFP Low Noise Silicon Bipolar RF Transistor For highest gain and low noise amplifier Outstanding G ms =. at.8 GHz Minimum noise figure NF min =.9 at.8 GHz Pbfree (RoHS compliant) and halogenfree package
BFP620. Low Noise SiGe:C Bipolar RF Transistor
Low Noise SiGe:C Bipolar RF Transistor Highly linear low noise RF transistor Provides outstanding performance for a wide range of wireless applications Based on Infineon's reliable high volume Silicon
BAS70.../BAS170W BAS170W BAS70-02L BAS70-02W BAS70 BAS70-04W BAS70-04S BAS70-05W BAS70-06 BAS70-06W BAS70-07 BAS70-07W
BAS7.../BAS7W Silicon Schottky Diode General-purpose diode for high-speed switching Circuirotection Voltage clamping High-level detecting and mixing BAS7-S: For orientation in reel see package information
BAS40.../BAS140W BAS40-05 BAS40-05W BAS40-06 BAS40-06W BAS40-02L BAS40-07 BAS40-07W
BAS4.../BAS4W Silicon Schottky Diode General-purpose diode for high-speed switching Circuirotection Voltage clamping High-level detecting and mixing Pb-free (RoHS compliant) package Qualified according
BFP405. NPN Silicon RF Transistor
BFP5 NPN Silicon RF Transistor For low current applications For oscillators up to GHz Noise figure F =.5 db at. GHz outstanding G ms = db at. GHz Transition frequency f T = 5 GHz Gold metallization for
ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package Configuration L S (nh) Marking BAT15-02EL BAT15-02ELS
BAT5... Silicon Schottky Diodes Low barrier type for DBS mixer applications up to GHz, phase detectors and modulators Low noise figure Pb-free (RoHS compliant) package BAT5-EL BAT5-ELS BAT5-W BAT5-4W BAT5-5W
BFP420. NPN Silicon RF Transistor
BFP NPN Silicon RF Transistor For high gain low noise amplifiers For oscillators up to GHz Noise figure F =. db at. GHz outstanding G ms = db at. GHz Transition frequency f T = 5 GHz Gold metallization
Type Marking Pin Configuration Package BFR380F FCs 1 = B 2 = E 3 = C TSFP-3
Linear Low Noise Silicon Bipolar RF Transistor High linearity low noise driver amplifier Output compression point 9.5 m @.8 GHz Ideal for oscillators up to 3.5 GHz Low noise figure. at.8 GHz Collector
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
NPN Silicon RF Transistor* For low current applications Smallest Package 1.4 x 0.8 x 0.59 mm Noise figure F = 1.25 db at 1.8 GHz outstanding G ms = 23 db at 1.8 GHz Transition frequency f T = 25 GHz Gold
BAT17... Silicon Schottky Diode For mixer applications in VHF/UHF range For high-speed switching application Pb-free (RoHS compliant) package
Silicon Schottky Diode For mixer applications in VHF/UHF range For highspeed switching application Pbfree (RoHS compliant) package BAT17 BAT17 BAT17W BAT175 BAT175W BAT176W BAT177 " ESD (Electrostatic
BFP520. NPN Silicon RF Transistor
NPN Silicon RF Transistor For highest gain low noise amplifier at. GHz and ma / V Outstanding Gms =.5 Noise Figure F =.95 For oscillators up to 5 GHz Transition frequency f T = 5 GHz Gold metallisation
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
NPN Silicon Germanium RF Transistor High gain ultra low noise RF transistor Provides outstanding performance for a wide range of wireless applications up to GHz and more Ideal for CDMA and WLAN applications
Type Package Configuration L S (nh) Marking BB814 SOT23 common cathode 1.8 SH1/2*
Silicon Variable Capacitance Diodes For FM radio tuners with extended frequency band High tuning ratio at low supply voltage (car radio) Monolithic chip (common cathode) for perfect dual diode tracking
Type Marking Pin Configuration Package BFP520 APs 1=B 2=E 3=C 4=E - - SOT343
BFP Low Noise Silicon Bipolar RF Transistor Low noise amplifier designed for low voltage applications, ideal for. V or. V supply voltage Common e.g. in cordless phones, satellite receivers and oscillators
BAR64... BAR64-02LRH BAR64-02V BAR64-03W BAR64-06 BAR64-06W BAR64-05 BAR64-05W BAR64-04W
Silicon PIN Diode High voltage current controlled RF resistor for RF attenuator and switches Frequency range above MHz up to 6 GHz Very low capacitance at zero volt reverse bias at frequencies above GHz
The BFP840FESD is a discrete RF heterojunction bipolar transistor (HBT) with an integrated ESD protection suitable for 5 GHz band applications.
Product description The is a discrete RF heterojunction bipolar transistor (HBT) with an integrated ESD protection suitable for 5 GHz band applications. Feature list Unique combination of high end RF performance
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Product description The BFP7 is a wideband NPN RF heterojunction bipolar transistor (HBT). Feature list Low noise figure NF min =.8 db at. GHz, 3 V, 6 ma High gain G ms = 9. db at. GHz, 3 V, ma OIP 3 =.
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Product description The is a wideband NPN RF heterojunction bipolar transistor (HBT). Feature list Low noise figure NF min = 1 db at 5.5 GHz, 3 V, 6 ma High gain G ms = 21 db at 5.5 GHz, 3 V, 15 ma OIP
Robust low noise broadband pre-matched RF bipolar transistor
Product description The is a robust low noise broadband pre-matched RF heterojunction bipolar transistor (HBT). Feature list Unique combination of high end RF performance and robustness: dbm maximum RF
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Product description The is a low noise device based on a grounded emitter (SIEGET ) that is part of Infineon s established fourth generation RF bipolar transistor family. Its transition frequency f T of
ESD5V0SxUS. ESD5V0S5US E rotated in reel. Type Package Configuration Marking SOT363 SOT363 SOT363 ESD5V0S4US ESD5V0S5US
ESDV0SxUS MultiChannel TVS Diode Array ESD / transient protection of data and power lines in. V / V application according to: IEC00 (ESD): ± 0 KV (contact) IEC00 (EFT): 80 A (/0 ns) IEC00 (Surge): A (8/0
DUAL SURFACE MOUNT NPN/PNP TRANSISTORS (COMPLIMENTARY) Rating Symbol Value Units Collector-Base Voltage. 50 V Collector-Emitter Voltage
DUAL SURFACE MOUNT NPN/PNP TRANSISTORS (COMPLIMENTARY) This device contains two electrically-isolated complimentary pair (NPN and PNP) general-purpose transistors. This device is ideal for portable applications
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Product description The BFP8ESD is a high performance RF heterojunction bipolar transistor (HBT) with an integrated ESD protection suitable for. -. GHz LNA applications. Feature list Unique combination
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Product description This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage
MUN52xxDWT DEVICE MARKING, RESISTOR VALUES AND ORDERING INFORMATION Device Marking R(K) R2(K) Shipping MUN52DWT SOT-363 7A /Tape&Reel MUN522DW
MUN52xxDWT NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors;
Smart High-Side Power Switch BTS4140N
Ω Ω 4 2 1 PG-SOT-223 AEC qualified Green product (RoHS compliant) 3 VPS05163 General Description N channel vertical power MOSFET with charge pump and current controlled input, monolithically integrated
Obsolete Product(s) - Obsolete Product(s)
MMBT2222A APPLICATIONS WELL SUITABLE FOR PORTABLE EQUIPMENT SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURATION OLTAGE SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Type Marking MMBT2222A M22
MMBT2222A SMALL SIGNAL NPN TRANSISTOR
SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Type Marking M22 SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE PNP COMPLEMENTARY
Dual Bias Resistor Transistors
DATA SHEET SEMICONDUCTOR MUN5DW Series Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor
NPN Silicon Planar High Voltage Transistor
NPN Silicon Planar High Voltage Transistor FEATURES High BV CEO, BV CBO High current gain Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC Halogen-Free according to IEC 61249-2-21
Obsolete Product(s) - Obsolete Product(s)
PN2222A ABSOLUTE MAXIMUM RATINGS SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Ordering Code Marking Package / Shipment PN2222A PN2222A TO-92 / Bulk PN2222A-AP PN2222A TO-92 / Ammopack SILICON EPITAXIAL
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
PNT723T503E0-2 High EB High DC gain Ultra-Small package switch transistor
Feature This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. Package: SOT-723 Emitter -Base Breakdown Voltage 11V High DC current gain typical 38 Low Saturation Voltage 8mv.15 continuous collector
BC807-16/-25/-40 Taiwan Semiconductor Small Signal Product 0.3 Watts, PNP Plastic-Encasulate Transistor
Small Signal Product 0.3 Watts, PNP Plastic-Encasulate Transistor FEATURES - Ideally suited for automatic insertion - Epitaxial planar die construction - For switching, AF driver and amplifer applications
PEMD16; PUMD16. NPN/PNP resistor-equipped transistors; R1 = 22 kω, R2 = 47 kω. Type number Package PNP/PNP NPN/NPN complement complement
NPN/PNP resistor-equipped transistors; R = 22 kω, R2 = 47 kω Rev. 02 7 June 2005 Product data sheet. Product profile. General description NPN/PNP resistor-equipped transistors. Table : Product overview
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 207 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
PROFET ITS716G Ω Ω. Green Product (RoHS compliant) Data Sheet 1 Rev. 1.1,
Ω Ω Ω Green Product (RoHS compliant) Data Sheet 1 Rev. 1.1, 2008-10-02 Data Sheet 2 Rev. 1.1, 2008-10-02 Data Sheet 3 Rev. 1.1, 2008-10-02 Ω Ω Ω Ω Ω Ω ± ± ± Ω μ Data Sheet 4 Rev. 1.1, 2008-10-02 = Ω Ω
Data Sheet, Rev. 2.3, Sept BGA428. Gain and PCS Low Noise Amplifier. RF & Protection Devices
Data Sheet, Rev. 2.3, Sept. 2011 BGA428 Gain and PCS Low Noise Amplifier RF & Protection Devices Edition 2011-09-02 Published by Infineon Technologies AG, 81726 München, Germany Infineon Technologies AG
300mW, NPN Small Signal Transistor
300mW, NPN Small Signal Transistor FEATURES Low power loss, high efficiency Ideal for automated placement High surge current capability Compliant to RoHS directive 2011/65/EU and in accordance to WEEE
300mW, NPN Small Signal Transistor
300mW, NPN Small Signal Transistor FEATURES Low power loss, high efficiency Ideal for automated placement High surge current capability Compliant to RoHS directive 2011/65/EU and in accordance to WEEE
Fiber Optics. Plastic Fiber Optic Phototransistor Detector Plastic Connector Housing SFH350 SFH350V
Fiber Optics Plastic Fiber Optic Phototransistor Detector Plastic Connector Housing SFH350 Features 2.2 mm Aperture holds Standard 1000 Micron Plastic Fiber No Fiber Stripping Required Good Linearity Sensitive
SOT-563 Plastic-Encapsulate Transistors
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD JC T SOT-563 Plastic-Encapsulate Transistors BC847BVN DUAL TRANSISTOR (NPN+PNP) SOT-563 FEATURES Epitaxial Die Construction Two isolated NPN/PNP(BC847W+BC857W)
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
DATA SHEET. PUMF12 PNP general purpose transistor; NPN resistor-equipped transistor DISCRETE SEMICONDUCTORS. Product specification 2002 Nov 07
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 2002 Nov 07 FEATURES General purpose transistor and resistor equipped transistor in one package 100 ma collector current 50 V collector-emitter
7X = Device Marking. Symbol
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a baseemitter resistor. These digital transistors
Digital applications Cost-saving alternative to BC847/BC857 series in digital applications Control of IC inputs Switching loads
50 V, 0 ma NPN/PNP Resistor-Equipped double Transistors (RET) 29 July 207 Product data sheet. General description NPN/PNP Resistor-Equipped double Transistors (RET) in an ultra small DFN42-6 (SOT268) leadless
Data Sheet, Rev. 2.1, Sept BGA612. Silicon Germanium Broadband MMIC Amplifier. RF & Protection Devices
Data Sheet, Rev..1, Sept. 11 BGA61 Silicon Germanium Broadband MMIC Amplifier RF & Protection Devices Edition 11-9- Published by Infineon Technologies AG, 176 München, Germany Infineon Technologies AG
BC546A/B/C ~ BC550A/B/C Taiwan Semiconductor
NPN Transistor A/B/C ~ BC550A/B/C FEATURES For switching and AF amplifier applications These types are subdivided into three groups A, B and C according to their current gain Moisture sensitivity level
PEMH17; PUMH17. NPN/NPN resistor-equipped transistors; R1 = 47 kω, R2 = 22 kω. NPN/NPN Resistor-Equipped Transistors (RET).
NPN/NPN resistor-equipped transistors; R = 47 kω, R2 = 22 kω Rev. 02 3 May 2005 Product data sheet. Product profile. General description NPN/NPN Resistor-Equipped Transistors (RET). Table : Product overview
NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
Preferred Devices NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias
Dual Low Drop Voltage Regulator TLE 4476
Dual Low Drop oltage Regulator TLE 4476 Features Output 1: 350 ma; 3.3 ± 4% Output 2: 430 ma; 5.0 ± 4% Enable input for output 2 Low quiescent current in OFF state Wide operation range: up to 42 Reverse
PEMB18; PUMB18. PNP/PNP resistor-equipped transistors; R1 = 4.7 kω, R2 = 10 kω. Type number Package NPN/PNP NPN/NPN complement complement
PNP/PNP resistor-equipped transistors; R1 = 4.7 kω, R2 = 10 kω Rev. 03 8 July 2005 Product data sheet 1. Product profile 1.1 General description PNP/PNP resistor-equipped transistors. Table 1: Product
MMUN2111LT1 SERIES. PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network LESHAN RADIO COMPANY, LTD. MMUN2111LT1 Series
PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT
ESD0P2RF-02LRH ESD0P2RF-02LS
Bidirectional Ultra Low Capacitance TVS Diode ESD / transient protection of RF signal lines according to: IEC6004 (ESD): ±0kV (contact) IEC60044 (EFT): 40 A (5 / 50 ns) IEC60045 (Surge): 3 A (8 / 0 µs)
PT23T5401 Transistor. Feature. Mechanical Characteristics. Absolute maximum Top View. Parameter Symbol Value Units
PT23T54 Transistor Feature 3 - Collector PNP epitaxial planar silicon transistor - Base Top View 2 - Emitter Mechanical Characteristics Lead finish:% matte Sn(Tin) Mounting position: Any Qualified max
PEMD48; PUMD48. NPN/PNP resistor-equipped transistors; R1 = 47 kω, R2 = 47 kω and R1 = 2.2 kω, R2 = 47 kω
; R1 = 47 kω, R2 = 47 kω and R1 = 2.2 kω, R2 = 47 kω Rev. 05 13 April 20 Product data sheet 1. Product profile 1.1 General description NPN/PNP double Resistor-Equipped Transistors (RET) in small Surface-Mounted
MUN5332DW1, NSBC143EPDXV6, NSBC143EPDP6. Complementary Bias Resistor Transistors R1 = 4.7 k, R2 = 4.7 k
MUN5DW, NSBCEPDXV6, NSBCEPDP6 Complementary Bias Resistor Transistors R =.7 k, R =.7 k NPN and PNP Transistors with Monolithic Bias Resistor Network () PIN CONNECTIONS () () This series of digital transistors
Obsolete Product(s) - Obsolete Product(s)
Low voltage fast-switching PNP power transistor Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed 3 Miniature SOT-23 plastic package for surface
2STR2215. Low voltage fast-switching PNP power transistor. Features. Applications. Description
Low voltage fast-switching PNP power transistor Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Miniature SOT-23 plastic package for surface
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
STD1802T4-A. Low voltage fast-switching NPN power transistor. Features. Description. Applications
Low voltage fast-switching NPN power transistor Features This device is qualified for automotive application Very low collector to emitter saturation voltage High current gain characteristic Fast-switching
Low Drop Voltage Regulator TLE
Low Drop Voltage Regulator TLE 4266-2 Features Fixed output voltage 5. V or 3.3 V Output voltage tolerance ±2%, ±3% 15 ma current capability Very low current consumption Low-drop voltage Overtemperature
NPN Silicon Planar High Voltage Transistor
NPN Silicon Planar High Voltage Transistor FEATURES High BV CEO, BV CBO High current gain Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC Halogen-Free according to IEC 61249-2-21
ZXTD4591E6 DUAL 60V NPN/PNP SILICON MEDIUM POWER TRANSISTORS SUMMARY NPN: V CEO. = 1A; h FE =60V; I C = PNP: V CEO =
DUAL 6 NPN/PNP SILICON MEDIUM POWER TRANSISTORS SUMMARY NPN: CEO =6; I C = ; h FE =1-3 PNP: CEO =-6; I C = -; h FE =1-3 DESCRIPTION Complementary NPN and PNP medium power transistors packaged in the 6
65 V, 100 ma NPN/NPN general-purpose transistor. Type number Package PNP/PNP NPN/PNP complement complement
Rev. 01 24 August 2009 Product data sheet 1. Product profile 1.1 General description NPN/NPN general-purpose transistor pair in a very small Surface-Mounted Device (SMD) plastic package. Table 1. Product
DATA SHEET. BC847BVN NPN/PNP general purpose transistor DISCRETE SEMICONDUCTORS Nov 07. Product specification Supersedes data of 2001 Aug 30
DISCRETE SEMICONDUCTORS DATA SHEET M3D744 NPN/PNP general purpose transistor Supersedes data of 2001 Aug 30 2001 Nov 07 FEATURES 300 mw total power dissipation Very small 1.6 mm x 1.2 mm ultra thin package
NSVEMD4DXV6T5G. Dual Bias Resistor Transistors. NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias
C 2 B 1 E 1 E 2 B 2 C 1. Top View
MMDT446 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Complementary Pair One 424-Type NPN One 426-Type PNP Epitaxial Planar Die Construction Ideal for Medium Power Amplification
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 07 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and
Type Marking Pin Configuration Package BFP450 ANs 1 = B 2 = E 3 = C 4 = E SOT343
NPN Silicon RF Transistor For medium power amplifiers Compression point P = +9 m at. GHz maximum available gain G ma = 5.5 at. GHz Noise figure F =.5 at. GHz Transition frequency f T = GHz Gold metallization
BD545, BD545A, BD545B, BD545C NPN SILICON POWER TRANSISTORS
Copyright 1997, Power Innovations Limited, UK Designed for Complementary Use with the BD546 Series 85 W at 25 C Case Temperature 15 A Continuous Collector Current Customer-Specified Selections Available
Data Sheet, Rev. 2.2, April 2008 BGA622L7. Silicon Germanium Wide Band Low Noise Amplifier with 2 kv ESD Protection. Small Signal Discretes
Data Sheet, Rev. 2.2, April 2008 BGA622L7 Silicon Germanium Wide Band Low Noise Amplifier with 2 kv ESD Protection Small Signal Discretes Edition 2008-04-14 Published by Infineon Technologies AG, 81726
BC846-AU,BC847-AU,BC848-AU,BC849-AU,BC850-AU SERIES
BC846-AU,BC847-AU,BC848-AU,BC849-AU,BC85-AU SERIES NPN GENERAL PURPOSE TRANSISTORS OLTAGE 3/45/65 olt POWER 33 mwatt FEATURES General purpose amplifier applications NPN epitaxial silicon, planar design
PDTD113E series. NPN 500 ma, 50 V resistor-equipped transistors; R1 = 1 kω, R2 = 1 kω. 500 ma NPN Resistor-Equipped Transistors (RET) family.
PDTDE series NPN 500 ma, 50 V resistor-equipped transistors; R = kω, R = kω Rev. 0 4 April 005 Product data sheet. Product profile. General description 500 ma NPN Resistor-Equipped Transistors (RET) family.
NSTB1005DXV5T1, NSTB1005DXV5T5. Dual Common Base Collector Bias Resistor Transistors
NSTB005DXV5T, NSTB005DXV5T5 Preferred Devices Dual Common Base Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor
UNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD PNP PLANAR SILICON TRANSISTOR FEATURES SOT-89 * Low collector-to-emitter saturation voltage: V CE(SAT) =-0.4V max/i C =-A, I B =-0.A TO- TO-6 ORDERING INFORMATION Ordering