UNISONIC TECHNOLOGIES CO., LTD MPSA92/93
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1 UNISONIC TECHNOLOGIES CO., LTD /93 HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The /93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. FEATURES * High Collector-Emitter voltage: -V CEO =-300V ( ) -V CEO =-200V ( ) * Collector Dissipation: -P C (max.)=625mw ORDERING INFORMATION Ordering Number Pin Assignment Package Lead Free Halogen Free Packing L-AB3-R G-AB3-R SOT-89 B C E Tape Reel L-TN3-R G-TN3-R TO-252 B C E Tape Reel L-T92-B G-T92-B TO-92 E B C Tape Box L-T92-K G-T92-K TO-92 E B C Bulk L-T9N-B G-T9N-B TO-92NL E B C Tape Box L-T9N-K G-T9N-K TO-92NL E B C Bulk L-AB3-R G-AB3-R SOT-89 B C E Tape Reel L-TN3-R G-TN3-R TO-252 B C E Tape Reel L-T92-B G-T92-B TO-92 E B C Tape Box L-T92-K G-T92-K TO-92 E B C Bulk Note: Pin Assignment: B: Base C: Collector E: Emitter 1 of 5 Copyright 2017 Unisonic Technologies Co., Ltd
2 MARKING Package SOT-89 TO-252 TO-92 1 G: Halogen Free 1 G: Halogen Free TO-92NL G: Halogen Free - UNISONIC TECHNOLOGIES CO., LTD 2 of 5
3 ABSOLUTE MAXIMUM RATING (T A =25 С unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base -300 V V CBO Collector-Emitter -300 V V CEO Emitter-Base V EBO -5 V Collector Current I C -500 ma SOT W Collector Dissipation TO-252 P C 1.1 W 0.62 W Junction Temperature T J 150 С Storage Temperature T STG -55~ +150 С Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT SOT C/W Junction to Ambient TO-252 θ JA 110 C/W 200 C/W SOT C/W Junction to Case TO-252 θ JC 8.3 C/W 83.3 C/W ELECTRICAL CHARACTERISTICS (T A =25 С, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Collector-Base Breakdown -300 V BV CBO I C =-100µA, I E =0 Collector-Emitter Breakdown -300 V BV CEO I C =-1mA, I B =0 Emitter-Base Breakdown BV EBO I E =-100µA, I C =0-5 V Collector Cut-Off Current µa I CBO V CB =-200V, I E = µa Emitter Cut-Off Current I EBO V EB =-3V, I C = µa ON CHARACTERISTICS DC Current Gain(note) h FE V CE =-10V, I C =-1mA V CE =-10V, I C =-10mA V CE =-10V, I C =-30mA 80 Collector-Emitter Saturation V CE(SAT) I C =-20mA, I B =-2mA -0.5 V Base-Emitter Saturation V BE(SAT) I C =-20mA, I B =-2mA V SMALL SIGNAL CHARACTERISTICS Current Gain Bandwidth Product f T V CE =-20V, I C =-10mA, f=100mhz 50 MHz Output Capacitance 6 pf C ob V CB =-20V, I E =0, f=1mhz 8 pf Note: Pulse test: P W <300µs, Duty Cycle<2%, V CE(SAT) <200mV UNISONIC TECHNOLOGIES CO., LTD 3 of 5
4 TYPICAL CHARACTERISTICS Collector-Emitter Saturation, VCE(SAT)(mV), Base-Emitter Saturation, VBE(SAT) (mv) Saturation Capacitance I C =10 I B V CE(SAT) V BE(SAT) Collector Current, I C (ma) Collector-Base, BV CBO (V) CIB(pF), CCB(pF) C IB C CB Collector Current, IC (A) Active-Region Safe Operating Area TO-92 T J =25 С DC ms Collector-Emitter, B VCEO (V) Current Gain Bandwidth Product, ft(mhz) Current Gain Bandwidth Product V CE =-20V f=100mhz Collector Current, I C (ma) DC Current Gain vs. Collector Current V CE =-10V 80 Collector Current vs. Collector-Emitter I B=-2mA I B=-1mA I B=-800μA DC Current Gain, hfe C -40 C 25 C Collector Current, -IC (ma) I B=-500μA I B=-300μA I B=-100μA Collector Current, -I C (ma) 0 0 I B=-50μA Collector-Emitter, -V CE (V) UNISONIC TECHNOLOGIES CO., LTD 4 of 5
5 TYPICAL CHARACTERISTICS (Cont.), (V) (VOLTS) assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all products described or contained herein. products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD 5 of 5
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UNISONIC TECHNOLOGIES CO., LTD 15A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC is an N-channel mode power MOSFET using UTC s advanced technology to provide customers with planar stripe and DMOS technology.
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N7 UNISONIC TECHNOLOGIES CO., LTD.3A, 6V N-CHANNEL POWER MOSFET DESCRIPTION The UTC N7 uses advanced technology to provide excellent R DS(ON), low gate charge and operation with low gate voltages. This
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UNISONIC TECHNOLOGIES CO., LTD 10A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching
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