SOT-563 Plastic-Encapsulate Transistors

Transcription

1 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD JC T SOT-563 Plastic-Encapsulate Transistors BC847BVN DUAL TRANSISTOR (NPN+PNP) SOT-563 FEATURES Epitaxial Die Construction Two isolated NPN/PNP(BC847W+BC857W) Transistors in one package MAKING: KAW MAXIMUM RATINGS TR ( unless otherwise noted) Symbol Parameter Value Units V CBO Collector-Base Voltage 5 V O Collector-Emitter Voltage 45 V V EBO Emitter-Base Voltage 6 V Collector Current Continuous. A Collector Power Dissipation 5 mw T J Junction Temperature 5 T stg Storage Temperature CHARACTERISTICS of TR (NPN Transistor) (Ta unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO =μa,i E = 5 V Collector-emitter breakdown voltage V (BR)CEO =ma,i B = 45 V Emitter-base breakdown voltage V (BR)EBO I E =μa, = 6 V Collector cut-off current BO V CB =3V,I E = 5 na Emitter cut-off current I EBO V EB =5V, = 5 na DC current gain h FE =5V, =2mA 2 45 Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage (sat) =ma,i B =.5mA.25 V (sat) =ma,i B =5mA.6 V V BE(sat) =ma,i B =.5mA.7 V V BE(sat) =ma,i B =5mA.9 V V BE(on) =5V, =2mA.58.7 V V BE(on) =5V, =ma.72 V Collector output capacitance V CB =V,I E =,f=mhz 6. pf Transition frequency f T =5V, =ma,f=mhz MHz Noise figure NF =5V,I c =.2mA, f=khz,rg=2kω, f=2hz db A,Jun,24 A-,Jul,28

2 MAXIMUM RATINGS TR2 ( unless otherwise noted) Symbol Parameter Value Units V CBO Collector-Base Voltage -5 V O Collector-Emitter Voltage -45 V V EBO Emitter-Base Voltage -5 V Collector Current Continuous -. A * Collector Power Dissipation 5 mw T J Junction Temperature 5 T stg Storage Temperature CHARACTERISTICS of TR2 (PNP Transistor) (Ta unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V (BR)CBO =-μa,i E = -5 V Collector-emitter breakdown voltage V (BR)CEO =-ma,i B = -45 V Emitter-base breakdown voltage V (BR)EBO I E =-μa, = -5 V Collector cut-off current BO V CB =-3V,I E = -5 na Emitter cut-off current I EBO V EB =-5V, = -5 na DC current gain h FE =-5V, =-2mA Collector-emitter saturation voltage (sat) =-ma,i B =-.5mA -.3 V (sat) =-ma,i B =-5mA -.65 V Base-emitter saturation voltage V BE(sat) =-ma,i B =-.5mA -.7 V V BE(sat) =-ma,i B =-5mA -.95 V Base-emitter voltage V BE(on) =-5V, =-2mA V V BE(on) =-5V, =-ma -.82 V Collector output capacitance V CB =-V,I E =,f=mhz 4.5 pf Transition frequency f T =-5V, =-ma,f=mhz MHz Noise figure NF =-5V,I c =-.2mA, f=khz,rg=2kω, f=2hz db 2 A,Jun,24 A-,Jul,28

3 Typical Characteristics BC847BVN/TR COLLECTOR CURRENT Static Characteristic ua 9.uA 8.uA 7.uA 6.uA 5.uA 4.uA COMMON EMITTER 3.uA 2.uA DC CURRENT GAIN h FE h FE = = 5V I B =ua COLLECTOR-EMITTER VOLTAGE (V). COLLECTOR CURRENT sat 2 V BEsat COLLECTOR-EMITTER SATURATION VOLTAGE sat = BASE-EMITTER SATURATION VOLTAGE V BEsat = β=2. COLLECTOR CURREMT β=2. COLLECTOR CURREMT COLLECTOR CURRENT = V BE CAPACITANCE C (pf) /C ib V CB /V EB C ib f=mhz I E =/ = =25 = 5V BASE-EMMITER VOLTAGE V BE.. REVERSE VOLTAGE V (V) 2 35 f T 2 TRANSITION FREQUENCY f T (MHz) =5V =25 o C COLLECTOR POWER DISSIPATION (mw) COLLECTOR CURRENT AMBIENT TEMPERATURE ( ) 3 A,Jun,24 A-,Jul,28

4 Typical Characteristics BC847BVN/TR2 COLLECTOR CURRENT Static Characteristic -ua -9.uA -8.uA -7.uA -6.uA -5.uA COMMON EMITTER -4.uA -3.uA -2.uA I B =-.ua DC CURRENT GAIN h FE h FE = = -5V COLLECTOR-EMITTER VOLTAGE (V) COLLECTOR CURRENT - sat - V BEsat COLLECTOR-EMITTER SATURATION VOLTAGE sat - = BASE-EMITTER SATURATION VOLTAGE V BEsat = β= COLLECTOR CURREMT β= COLLECTOR CURREMT COLLECTOR CURRENT = V BE CAPACITANCE C (pf) /C ib C ib V CB /V EB f=mhz I E =/ = =25 = -5V BASE-EMMITER VOLTAGE V BE REVERSE VOLTAGE V (V) -2 3 f T 2 75 TRANSITION FREQUENCY f T (MHz) 2 =-5V =25 o C COLLECTOR POWER DISSIPATION (mw) COLLECTOR CURRENT AMBIENT TEMPERATURE ( ) 4 A,Jun,24 A-,Jul,28

5 SOT-563 Package Outline Dimensions SOT-563 Suggested Pad Layout 5 A,Jun,24 A-,Jul,28

6 SOT-563 Tape and Reel 6 A,Jun,24 A-,Jul,28