3 Volt, Low Noise High ft Silicon Transistor. MP4T6310 Series. Features SOT-23. Description SOT-143. Chip
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1 3 Volt, Low Noise High ft Silicon Transistor Features High Performance at VCE = 3V Low Noise Figure at Small Currents (.3- ma) High Gain (14 db) at 1mA Collector Current High ft (14 GHz) Available on Tape and Reel Description The MP4T631 series of low current, high ft silicon NPN bipolar transistors provides low noise figure at a bias of 3 volts and small collector current. These inexpensive surface mount NPN transistors are well suited for usage in protable battery operated wireless systems from 5 MHz through.5 GHz where low noise figure at small current is important. The MP4T631 transistors series has high ft and low noise when operated with.3 to. milliamperes current, and 3 volt bias. The associated gain is approximately 14 db at 1 GHz with 1 ma collector current. The MP4T631 also has low phase noise while operating in a low power 3-5 volt battery operated VCO in the frequency range of.5 to 3 GHz. SOT-3 SOT-143 Chip The MP4T631 transistor is designed for wireless communication systems from VHF through L-band where good noise figure and high gain at 3 volt bias and low DC current are key system requirements. Suggested uses include, 9 MHz portable phones, pagers, PCN subscriber phones and.4 GHz cordless and cellular hand held receivers. The MP4T631 family of transistors is available in chip (MP4T631), SOT-3 (MP4T63133), SOT-143 (MP4T63139), and in Micro-X (MP4T63135) packages. Surface mount packages are available on tape and reel. 1
2 Electrical Specifications at 5 C Symbol Parameters Test Conditions ft Gain Bandwidth V CE = 3V Product I C = 6 ma S 1E Insertion Power V CE = 3V Gain I C = 4 ma f = 1 GHz f = GHz NF Noise Figure V CE = 3V I C =.5 ma I C = 1 ma f = 1 GHz GTU (max) Unilateral Gain V CE = 3V I C = 4 ma f = 1 GHz MAG P 1dB R TH (J-A) Maximum Available Gain Power Out at 1dB Compression Thermal Resistance 1. Junction/Heat Sink R TH (J-C). Free Air f = GHz V CE = 3V I C = 4 ma f = GHz V CE = 3V I C = ma f = 1 GHz Junction/ Ambient Units MP4T631 MP4T63133 MP4T63135 MP4T63139 Chip SOT-3 Micro-X SOT-143 GHz 14 typ. 1 typ. 14 typ. 1 typ. db db db db dbm 1 typ. typ. 11 typ. 7 typ. 1 typ. typ. 11 typ. 7 typ. 1.5 typ. 1.5 typ. 1.5 typ. 1.5 typ typ. 9 typ. 13 typ. typ typ. 9 typ. 13 typ. typ. 1 typ. 1 typ. 1 typ. 1 typ. 1.5 typ. 1.5 typ. 1.5 typ. 1.5 typ. C/W 75 max 1 7 typ. 6 typ. 7 typ. Maximum Ratings at 5 C Parameter Symbol Maximum Rating Collector Base Voltage V CBO V Collector-Emitter Voltage V CEO 6 V Emitter-Base Voltage V EBO 1.5 V Collector Current I C 1 ma Junction Temperature T j C Storage Temperature Chips or Ceramic Packages T STG -65 C to + C Plastic Packages -65 C to +15 C Power Dissiapation P D -6mW 1 1. See Typical Performance Curves for power derating. Electrical Specifications at 5 C Parameters Conditions Symbol Min. Typ. Max. Units Collector Cut-off Current V CB = 3 V I CBO 1 na I E = Emitter Cut-off Current V EB = 1 V I EBO 1 µa I C = Forward Current Gain V CE = 3 V h FE 1 I C = 3 ma Collector Base Junction Capacitance V CB = 3 V I E = f = 1 MHz C OB.4.55 pf
3 MP4T63135 Typical Scattering Parameters in the MIcro-X Package V CE = 3 Volts, I C = ma Frequency S11E S1E S1E SE (MHz) Mag. Angle Mag. Angle Mag. Angle Mag Angle V CE = 3 Volts, I C = 4 ma Frequency S11E S1E S1E SE (MHz) Mag. Angle Mag. Angle Mag. Angle Mag Angle V CE = 3 Volts, I C = 6 ma Frequency S11E S1E S1E SE (MHz) Mag. Angle Mag. Angle Mag. Angle Mag Angle
4 Typical Performance Curves (MP4T63135) POWER DISSIPATION (mw) POWER DERATING CURVES M P4T631 (CHIP) ON INFINITE HEAT SINK M P4T63133, 39 (SOT-3, 143) FREE AIR M P4T63135 (M ICRO-X) AMBIENT TEMPERATURE (C) NOISE FIGURE (db) ASSOCIATED GAIN (db) NOISE FIGURE and ASSOCIATED GAIN at VCE = 3 V, 1 GHz vs COLLECTOR CURRENT ASSOCIATED GAIN NOISE FIGURE GAIN (db) GAIN BANDWIDTH (GHz) GAIN vs FREQUENCY at VCE=3 V and IC = 4 ma S 1E GTU (MAX) 1 1 FREQUENCY (GHz) GAIN BANDWIDTH PRODUCT (ft) vs COLLECTOR CURRENT at VCE=3 V 1 1 COLL.-BASE CAPACITANCE (pf) GAIN (db) COLLECTOR-BASE CAPACITANCE (C OB ) vs COLLECTOR-BASE VOLTAGE 1 1 COLLECTOR-BASE VOLTAGE (Volts) GAIN vs COLLECTOR CURRENT at 3 GHz, VCE=3 V S 1E MAG GTU (MAX) 1 1 4
5 Typical Performance Curves (MP4T63135) Cont. DC CURRENT GAIN (hfe) vs COLLECTOR CURRENT at VCE = 3 V DC CURRENT GAIN OUTPUT POWER at 1 db COMPRESSION POINT vs COLLECTOR CURRENT VCE=3V P OUT - 1dB (dbm) f = 9 MHz f = GHz
6 Case Styles Chip - MP4T631 BASE MP4T6315 DIM. INCHES (Nominal) MM (Nominal) A B C.16.4 D B D THICKNESS EMITTER A C PLCS. SOT-3 - MP4T63133 F D Collector H G L M A N B K E MP4T63133 INCHES MILLIMETERS DIM. MIN. MAX. MIN. MAX. A.4 1. B.. C.4 1. D E F G H.37 typical.95 typical J.75 typical 1.9 typical K.13.6 L.4.6 Base J Emitter C DIM. GRADIENT M 1 max. 1 N... 3 NOTE: 1. Applicable on all sides 6
7 Case Styles (Con t) Micro-X - MP4T63135 Emitter E Collector B F 4 PLCS. Base H MP4T63135 INCHES MILLIMETERS DIM. MIN. MAX. MIN. MAX. A B C D E F G H Emitter A C G D SOT MP4T63139 Emitter Base G J H M N A B P L MP4T63139 INCHES MILLIMETERS DIM. MIN. MAX. MIN. MAX. A B C.4 1. D E F G H J.75 typical 1.9 typical K.75 typical 1.9 typical L.13.6 M.4.6 E K D Collector Emitter C F DIM. GRADIENT N 1 max. 1 P... 3 NOTE: 1. Applicable on all sides 7
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