RF and MICROWAVE DISCRETE LOW POWER TRANSISTORS Qualified per MIL-PRF-19500/343

Transcription

1 Available on commercial versions RF and MICROWAVE DISCRETE LOW POWER TRANSISTORS Qualified per MIL-PRF-19500/343 DESCRIPTION The 2N2857UB is a military qualified silicon NPN transistor (also available in commercial version), designed for UHF equipment and other high-reliability applications. Common applications include low noise amplifier; oscillator, and mixer applications. Microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. Qualified Levels: JAN, JANTX, and JANTXV Important: For the latest information, visit our website FEATURES Surface mount equivalent to JEDEC registered 2N2857. Silicon NPN, UB packaged UHF transistor. Maximum unilateral gain = 13 db 500 MHz. JAN, JANTX, and JANTXV military qualified versions available per MIL-PRF-19500/343. RoHS compliant version available (commercial grade only). APPLICATIONS / BENEFITS UB Package Also available in: TO-72 Package (axial-leaded) 2N2857 Low-power, ultra-high frequency transistor. Low-profile ceramic surface mount package. MAXIMUM T A = +25 o C Parameters/ Unit Junction and Storage Temperature T J and T STG -65 to +200 o C Collector-Emitter Voltage V CEO 15 V Collector-Base Voltage V CBO 30 V Emitter-Base Voltage V EBO 3 V Thermal Resistance Junction-to-Ambient R ӨJA 400 o C/W Thermal Resistance Junction-to-Solder Pad R ӨJSP 210 o C/W Steady-State Power Dissipation (1) P D 200 mw Collector Current I C 40 ma Notes: 1. Derate linearly 1.14 mw/ C for T A > +25 C. MSC Lawrence 6 Lake Street, Lawrence, MA Tel: or (978) Fax: (978) MSC Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) Fax: +353 (0) Website: T4-LDS , Rev. 1 (120178) 2011 Microsemi Corporation Page 1 of 5

2 MECHANICAL and PACKAGING CASE: Ceramic. TERMINALS: Gold plating over nickel underplate. RoHS compliant matte/tin available on commercial grade only. MARKING: Part number, date code, manufacturer s ID. TAPE & REEL option: Standard per EIA-418D. Consult factory for quantities. WEIGHT: < 0.04 Grams. See Package Dimensions on last page. PART NOMENCLATURE JAN 2N2857 UB (e3) Reliability Level JAN=JAN level JANTX=JAN level JANTXV=JANTXV level Blank = Commercial JEDEC type number (See Electrical Characteristics table) RoHS Compliance e3 = RoHS compliant (available on commercial grade only) Blank = non-rohs compliant Surface Mount package I C I B T A T C V CB V EB Collector current (dc). Base current (dc). Ambient or free air temperature. Case temperature. Collector to base voltage (dc). Emitter to base voltage (dc). SYMBOLS & DEFINITIONS Definition T4-LDS , Rev. 1 (120178) 2011 Microsemi Corporation Page 2 of 5

3 ELECTRICAL T C = +25 o C OFF CHARACTERISTICS Min. Typ. Max. Unit Collector-Emitter Breakdown Voltage (I C = 3.0 ma, Bias condition D) Collector to Emitter Cutoff Current (V CE = 16 V, Bias condition C) Emitter to Base Cutoff Current (V EB = 3 V, Bias condition D) Collector to Base Cutoff Current (V CB = 15 V, Bias condition D) V (BR)CEO V I CES na I EBO µa I CBO na ON CHARACTERISTICS Min. Typ. Max. Unit Forward Current transfer ratio (I C = 3.0 ma, V CE = 1.0 V) Collector-Emitter Saturation Voltage (I C = 10 ma, I B = 1 ma) Base-Emitter Saturation Voltage (I C = 10 ma, I B = 1 ma) h FE V CE(sat) V V BE(sat) V DYNAMIC CHARACTERISTICS Magnitude of common emitter small signal short circuit forward current transfer ratio (V CE = 6 V, Ic = 5 ma, f = 100 MHz) Collector-base time constant (I E = 2.0 ma, V CB = 6.0 V, f = 31.9 MHz) Collector to Base feedback capacitance (I E = 0 ma, V CB = 10 V, 100 khz < f < 1 MHz Noise Figure (50 Ohms) (I C = 1.5 ma, V CE = 6 V, f = 450 MHz, R g = 50 Ω) Small Signal Power Gain (common emitter) (I E = 1.5 ma, V CE = 6 V, f = 450 MHz Min. Typ. Max. Unit h fe r b C c 4-15 pf C cb 1.0 pf F 4.5 db G pe db T4-LDS , Rev. 1 (120178) 2011 Microsemi Corporation Page 3 of 5

4 GRAPHS Theta ( o CW) Time (sec) FIGURE 1 Maximum Thermal Impedance T4-LDS , Rev. 1 (120178) 2011 Microsemi Corporation Page 4 of 5

5 PACKAGE DIMENSIONS Dimensions Dimensions inch millimeters Note inch millimeters Min Max Min Max Min Max Min Max BH LS BL LS BW LW CL r CW r LL r LL Note NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Hatched areas on package denote metallized areas. 4. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid. 5. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. T4-LDS , Rev. 1 (120178) 2011 Microsemi Corporation Page 5 of 5