Silicon Bipolar Low Noise Microwave Transistors
|
|
|
- Jessica Lambert
- 5 years ago
- Views:
Transcription
1 Silicon Bipolar Low Noise Microwave Transistors MP42141 Features Case Styles Low Intrinsic Noise Figure (2.3dB 1.0 GHz) High Power Gain At 1.0 GHz 18.0 db Typical Gold Metalization Hermetic and Surface Mount Packages Available Can be Screened to JANTX, JANTXV Equivalent Levels ION Implanted arsenic Emitter for Consistent Performance Description This NPN Silicon transistor finds applications in low noise and medium power microwave amplifier circuitry. The MP42141 exhibits an excellent noise figure characteristic over the frequency range of.5 to 2 GHz. This transistor also features good high frequency current gain at medium current levels. Applications RF amplifiers and low level oscillators. M-Pulse Microwave 1
2 Absolute Maximum Ratings Collector-Base Voltage V CBO 27 V Collector-Emitter Voltage V CEO 20 V Emitter-Base Voltage V EBO 1.5 V Collector Current I C 50 ma Junction Operating Temperature T j 200 C Storage Temperature Chip or Ceramic Packages Plastic Packages Total Power Dissipation at 25 C -65 C to +200 C -65 C to +125 C 509 Case Style 400 mw 510 Case Style 700 mw 35 Case Style 700 mw Electrical 25 C Parameter of Test Condition Symbol Units MP Chip TO-72 Gain Bandwidth Product V CE = 10 volts f T GHz 4.1 typ Fm =1.0 GHz Ic = 15 ma Insertion Power Gain V CE = 15 volts S 21E 2 db I C = 15 ma f = 1 GHz 13 typ 13 typ 11 typ f = 2 GHz 7 typ 7 min 5 typ Noise Figure V CE = 10 volts NF db I C = 5 ma f = 1 GHz 2.0 typ 2.0 typ 2.3 typ f = 2 GHz 3.4 typ 3.4 typ 3.6 typ Unilateral Gain V CE = 10 volts GTU (max) db I C = 15 ma f = 1 GHz 17 typ 17 typ 14 typ Power Out at 1 db V CE = 10 volts P 1dB dbm Compression I C = 10 ma Z=OPT f = 1 GHz N/A +7 typ +4 typ M-Pulse Microwave 2
3 Electrical 25 C Parameter Condition Symbol Min Typical Max Units Collector Cut-off Current V CB = 10 volts I CBO 100 na I E = 0 µa Emitter Cut-off Current V EB = 1 volt I EBO 1 µa I C = 0 µa Forward Current Gain V CE = 10 volts h FE I C = 5 ma Collector-Base Junction Capacitance V CB = 15 volts f = 1 MHz C CB pf (35) Typical Scattering Parameters MP , V CE = 10 Volts, I C = 5 ma Frequency S11E S21E S12E S22E (MHz) Mag. Angle Mag. Angle Mag. Angle Mag Angle MP , V CE = 15 Volts, I C = 15 ma Frequency S11E S21E S12E S22E (MHz) Mag. Angle Mag. Angle Mag. Angle Mag Angle M-Pulse Microwave 3
4 M-Pulse Microwave 4
5 Emitter G E Collector Emitter A B F 4 PLCS. Base D H C INCHES MILLIMETERS DIM. MIN. MAX. MIN. MAX. A B C D E F G H TO-72 INCHES MILLIMETERS DIM MIN. MAX. MIN. MAX. A ,89 9,40 B ,11 6,60 C ,00 8,51 D ,02 E ,70 F ,41 0,53 G ,83 5,33 H 89 DEG 91 DEG 89 DEG 91 DEG J ,74 1,09 K 43 DEG 47 DEG 43 DEG 47 DEG L ,71 0,86 M-Pulse Microwave 5
Silicon Bipolar High f T Low Noise Medium Power 12 Volt Transistors
Silicon Bipolar High f T Low Noise Medium Power 1 Volt Transistors Features Low Phase Noise Oscillator Transistor mw Driver Amplifier Transistor Operation to GHz Available as Available in Hermetic Surface
3 Volt, Low Noise High ft Silicon Transistor. MP4T6310 Series. Features SOT-23. Description SOT-143. Chip
3 Volt, Low Noise High ft Silicon Transistor Features High Performance at VCE = 3V Low Noise Figure at Small Currents (.3- ma) High Gain (14 db) at 1mA Collector Current High ft (14 GHz) Available on Tape
AT Up to 6 GHz Medium Power Silicon Bipolar Transistor. Data Sheet
AT-86 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Description Avago s AT-86 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-86 is
Data Sheet. AT Up to 6 GHz Medium Power Silicon Bipolar Transistor. Features. Description. 100 mil Package. High Output Power:
AT-1 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Description Avago s AT-1 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-1 is housed
Up to 6 GHz Medium Power Silicon Bipolar Transistor. Technical Data AT Plastic Package
Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-286 Features High Output Power: 2.5 dbm Typical P 1 db at 2. GHz High Gain at 1 db Compression: 13.5 db Typical G 1 db at 2. GHz Low
techniques, and gold metalization in the fabrication of this device.
Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Technical Data AT-42 Features High Output Power: 21. dbm Typical P 1 db at 2. GHz 2.5 dbm Typical P 1 db at 4. GHz High Gain at 1 db Compression:
Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip. Technical Data AT-41400
Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Technical Data AT-1 Features Low Noise Figure: 1.6 db Typical at 3. db Typical at. GHz High Associated Gain: 1.5 db Typical at 1.5 db Typical at. GHz
Data Sheet. AT Up to 6 GHz Medium Power Silicon Bipolar Transistor. Description. Features. 85 Plastic Package
AT-85 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Description Avago s AT-85 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-85 is
Surface Mount Low Noise Silicon Bipolar Transistor Chip. Technical Data AT-41411
Surface Mount Low Noise Silicon Bipolar Transistor Chip Technical Data AT-111 Features Low Noise Figure: 1. db Typical at 1. GHz 1.8 db Typical at 2. GHz High Associated Gain: 18. db Typical at 1. GHz
Agilent AT Up to 6 GHz Low Noise Silicon Bipolar Transistor Data Sheet
Agilent AT-135 Up to GHz Low Noise Silicon Bipolar Transistor Data Sheet Description Agilent s AT-135 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-135
RF and MICROWAVE DISCRETE LOW POWER TRANSISTORS Qualified per MIL-PRF-19500/343
Available on commercial versions RF and MICROWAVE DISCRETE LOW POWER TRANSISTORS Qualified per MIL-PRF-19500/343 DESCRIPTION The 2N2857UB is a military qualified silicon NPN transistor (also available
Type Marking Pin Configuration Package BFP520F APs 1=B 2=E 3=C 4=E - - TSFP-4
Low Noise Silicon Bipolar RF Transistor For highest gain and low noise amplifier Outstanding Gms = 22.5 db at 1.8 GHz Minimum noise figure NF min = 0.95 db at 1.8 GHz For oscillators up to 15 GHz Transition
SS8050. V CE =1V, I C =5mA V CE =1V, I C =100mA. 9.0 pf f=1mhz f T Current Gain Bandwidth Product V CE =10V, I C =50mA MHz
SS8050 SS8050 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. Complimentary to Collector Current: I C =.5A Collector Power Dissipation: P C =2W (T C =25 C). Emitter 2. Base 3. Collector
AT General Purpose, Low Current NPN Silicon Bipolar Transistor. Data Sheet
AT-4532 General Purpose, Low Current NPN Silicon Bipolar Transistor Data Sheet Description Avago s AT-4532 is a general purpose NPN bipolar transistor that has been optimized for maximum f t at low voltage
DATA SHEET. BFR93AW NPN 5 GHz wideband transistor DISCRETE SEMICONDUCTORS Sep 18
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of November 99 File under Discrete Semiconductors, SC4 99 Sep 8 FEATURES High power gain Gold metallization ensures excellent reliability SOT33 (S-mini)
Type Marking Pin Configuration Package BFR193 RCs 1 = B 2 = E 3 = C SOT23
Low Noise Silicon Bipolar RF Transistor For low noise, highgain amplifiers up to 2 GHz For linear broadband amplifiers f T = 8 GHz, NF min = 1 db at 900 MHz Pbfree (RoHS compliant) package Qualification
LM3046 Transistor Array
Transistor Array General Description The LM3046 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to form a differentiallyconnected
Part Number Order Number Package Quantity Supplying Form. (Pb-Free)
NESGM NPN SiGe RF Transistor for Low Noise, High-in Amplification Flat-Lead -Pin Thin-Type Super Minimold (M) FEATURES The device is an ideal choice for low noise, high-gain at low current amplifications.
General Purpose Transistors
General Purpose Transistors PNP Silicon FEATURE Collector current capability I C = -5 ma. LBC87-6LTG LBC87-25LTG LBC87-4LTG Collector-emitter voltage V CEO (max) = -45 V. General purpose switching and
NPN/PNP Silicon Complementary Small Signal Dual Transistor Qualified per MIL-PRF-19500/421
Available on commercial versions NPN/PNP Silicon Complementary Small Signal Dual Transistor Qualified per MIL-PRF-19500/421 DESCRIPTION Qualified Levels: JAN, JANTX, and JANTXV This 2N4854U device in a
DISCRETE SEMICONDUCTORS DATA SHEET. BFR520 NPN 9 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14
DISCRETE SEMICONDUCTORS DATA SHEET BFR File under Discrete Semiconductors, SC4 September 99 BFR FEATURES High power gain Low noise figure High transition frequency Gold metallization ensures excellent
Dual General Purpose Transistors
DATA SHEET SEMICONDUCTOR Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT 363/SC 88 which is designed for
Type Marking Pin Configuration Package BFP196 RIs 1 = C 2 = E 3 = B 4 = E - - SOT143
Low Noise Silicon Bipolar RF Transistor For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to.5 GHz at collector currents from 4 3 0 ma to 80 ma Power amplifier
NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)
SEMICONDUCTOR TECHNICAL DATA Order this document by /D NPN Silicon COLLECTOR 2 BASE EMITTER MAXIMUM RATINGS Rating Symbol 546 547 548 Unit Collector Emitter oltage CEO 65 45 dc Collector Base oltage CBO
LM3046 Transistor Array
LM3046 Transistor Array General Description The LM3046 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to form
TO-92 SOT-23 Mark: 3B. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
PN98 Discrete POWER & Signal Technologies MMBT98 C C B E TO-92 SOT-23 Mark: 3B B E This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the.0 ma to 30
BFR91. Silicon NPN Planar RF Transistor. Vishay Semiconductors
Silicon NPN Planar RF Transistor Features High power gain Low noise figure High transition frequency Lead (Pb)-free component Component in accordance to RoHS 22/95/EC and WEEE 22/96/EC e3 3 2 1 2 E 3 1
BFG235. NPN Silicon RF Transistor*
NPN Silicon RF Transistor* For low-distortion broadband output amplifier stages in antenna and telecommunication systems up to GHz at collector currents from 0 ma to 50 ma 4 3 Power amplifiers for DECT
RF-amplifier up to GHz range specially for wide band antenna amplifier.
Silicon NPN Planar RF Transistor Applications Electrostatic sensitive device. Observe precautions for handling. RF-amplifier up to GHz range specially for wide band antenna amplifier. Features High power
Silicon NPN Planar RF Transistor
TELEFUNKEN Semiconductors BFR 9 Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features High power gain Low noise figure High transition
Type Marking Pin Configuration Package BFR92P GFs 1=B 2=E 3=C SOT23
NPN Bipolar RF Transistor For broadband amplifiers up to 2 GHz and fast nonsaturated switches at collector currents from 0.5 ma to 20 ma 3 1 2 Pbfree (RoHS compliant) package Qualification report according
DISCRETE SEMICONDUCTORS DATA SHEET. BFT92 PNP 5 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14
DISCRETE SEMICONDUCTORS DATA SHEET File under Discrete Semiconductors, SC14 November 1992 DESCRIPTION PINNING PNP transistor in a plastic SOT23 envelope. It is primarily intended for use in RF wideband
Cascadable Silicon Bipolar MMIC Amplifier. Technical Data MSA-0686
Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-686 Features Cascadable Ω Gain Block Low Operating Voltage:. V Typical V d db Bandwidth: DC to.8 GHz High Gain: 8. db Typical at. GHz Low Noise
BFP420. NPN Silicon RF Transistor
NPN Silicon RF Transistor For high gain low noise amplifiers For oscillators up to GHz Noise figure F =. at. GHz outstanding G ms = at. GHz Transition frequency f T = 5 GHz Gold metallization for high
DISCRETE SEMICONDUCTORS DATA SHEET. BFQ68 NPN 4 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14
DISCRETE SEMICONDUCTORS DATA SHEET File under Discrete Semiconductors, SC4 September 995 DESCRIPTION PINNING NPN transistor mounted in a four-lead dual-emitter SOTA envelope with a ceramic cap. All leads
Parameter Test Conditions Symbol Value Unit Junction ambient on glass fibre printed board (40 x 25 x 1.5) mm 3 plated with 35m Cu
Silicon NPN Planar RF Transistor BFW92 Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range. Features High power gain Low noise figure 3 2 94 9308
LM3046 Transistor Array
Transistor Array General Description The LM3046 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to form a differentiallyconnected
Part Ordering code Marking Remarks Package BFR91A BFR91AGELB-GS08 BFR91A Packed in Bulk TO-50(3)
Silicon NPN Planar RF Transistor Features High power gain Low noise figure High transition frequency Lead (Pb)-free component Component in accordance to RoHS 22/95/EC and WEEE 22/96/EC e3 3 2 1 2 E 3 1
BFR 93 / BFR 93 R. Silicon NPN Planar RF Transistor. Applications. Features. Absolute Maximum Ratings. Maximum Thermal Resistance
TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor BFR 93 / BFR 93 R Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features High power gain Low noise figure
Obsolete Product(s) - Obsolete Product(s)
PN2222A ABSOLUTE MAXIMUM RATINGS SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Ordering Code Marking Package / Shipment PN2222A PN2222A TO-92 / Bulk PN2222A-AP PN2222A TO-92 / Ammopack SILICON EPITAXIAL
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
NPN Silicon RF Transistor* For low-distortion broadband output amplifier stages in antenna and telecommunication systems up to GHz at collector currents from 0 ma to 50 ma Power amplifiers for DECT and
Type Marking Pin Configuration Package BFP540ESD AUs 1=B 2=E 3=C 4=E - - SOT343
BFPESD Low Noise Silicon Bipolar RF Transistor For ESD protected high gain low noise amplifier High ESD robustness typical value V (HBM) Outstanding G ms =. db @.8 GHz Minimum noise figure NF min =.9 db
NPN SILICON HIGH FREQUENCY TRANSISTOR 2.0 ± ± 0.1
FEATURES SMALL PACKAGE STYLE: NE686 Die in a mm x 1.5 mm package LOW NOISE FIGURE: NF = 1.5 db TYP at GHz HIGH GAIN: S1E = 9 db TYP at GHz HIGH GAIN BANDWIDTH: ft = 13 GHz LOW CURRENT OPERATION DESCRIPTION
BFR93A/BFR93AR/BFR93AW. Silicon NPN Planar RF Transistor. Vishay Semiconductors. Applications. Features. Absolute Maximum Ratings
Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band amplifier up to GHz range. Features High power gain High transition frequency Low
CA3045, CA3046. General Purpose NPN Transistor Arrays. Features. Description. Ordering Information. Applications. Pinout.
SEMICONDUCTOR CA4, CA46 November 996 General Purpose NPN Transistor Arrays Features Description Two Matched Transistors - V BE Match.............................. ±mv - I IO Match...........................
SD1731 (TH562) RF POWER BIPOLAR TRANSISTORS HF SSB APPLICATIONS. Figure 1. Package
RF POWER BIPOLAR TRANSISTORS HF SSB APPLICATIONS FEATURES SUMMARY OPTIMIZED FOR SSB 30 MHz 50 VOLTS EFFICIENCY 40% COMMON EMITTER GOLD METALLIZATION P OUT = 220 W PEP WITH 13 db GAIN Figure 1. Package
MMBT2222A SMALL SIGNAL NPN TRANSISTOR
SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Type Marking M22 SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE PNP COMPLEMENTARY
NPN Silicon RF Twin Transistor (with 2 Different Elements) in a 6-pin Lead-less Minimold. Part Number Order Number Quantity Package Supplying Form
Preliminary NPN Silicon RF Twin Transistor (with Different Elements) in a -pin Lead-less Minimold FEATURES Low voltage operation different built-in transistors (SC, SC) : Built-in high gain
NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/366
Available on commercial versions NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/366 Qualified Levels: JAN, JANTX, JANTXV and JANS DESCRIPTION This family of 2N3498 thru 2N3501 epitaxial planar transistors
Midium Power Transistors (±50V / ±3A)
Midium Power Transistors (±50V / ±3A) MP6Z3 Structure NPN/PNP Silicon epitaxial planar transistor Dimensions (Unit : mm) MPT6 (Dual) Features ) Low saturation voltage, typically V CE (sat) = 0.35V (Max.)
Obsolete Product(s) - Obsolete Product(s)
MMBT2222A APPLICATIONS WELL SUITABLE FOR PORTABLE EQUIPMENT SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURATION OLTAGE SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Type Marking MMBT2222A M22
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
NPN Silicon RF Transistor For IF amplifiers in TVsat tuners and for VCR modulators Pbfree (RoHS compliant) package 1) Qualified according AEC Q101 1 2 ESD (Electrostatic discharge) sensitive device, observe
SD1488 RF POWER BIPOLAR TRANSISTORS UHF MOBILE APPLICATIONS
RF POWER BIPOLAR TRANSISTORS UHF MOBILE APPLICATIONS FEATURES SUMMARY 470 MHz 12.5 VOLTS EFFICIENCY % COMMON EMITTER P OUT = 38 W MIN. WITH 5.8 db GAIN DESCRIPTION The SD1488 is a 12.5 V Class C epitaxial
NPN MEDIUM POWER SILICON TRANSISTOR
Available on commercial versions NPN MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 DESCRIPTION This family of high-frequency, epitaxial planar transistors feature low saturation voltage.
CA3018, CA3018A. General Purpose Transistor Arrays. Features. Applications. Part Number Information. Pinout. [ /Title () /Autho.
[ /Title /Subject /Autho /Keyords ) /Cretor /DOCI FO dfark /Pageode /Useutines /DOC- IEW dfark Semiconductor General Purpose Transistor Arrays The CA8 and CA8A consist of four general purpose silicon NPN
NPN 5 GHz wideband transistor. The transistor is encapsulated in a 3-pin plastic SOT23 envelope.
BFTA Rev. 4 6 July 4 Product data sheet. Product profile. General description The BFTA is a silicon NPN transistor, primarily intended for use in RF low power amplifiers, such as pocket telephones and
2SC1923 2SC1923. High Frequency Amplifier Applications FM, RF, MIX, IF Amplifier Applications. Maximum Ratings (Ta 25 C)
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC1923 High Frequency Amplifier Applications FM, RF, MIX, IF Amplifier Applications Unit: mm Small reverse transfer capacitance: Cre
Part Type differentiation Ordering code Remarks 2N3904 2N3904-BULK or 2N3904-TAP Bulk / Ammopack
Small Signal Transistor (NPN) Features NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary type, the PNP transistor 2N3906 is recommended. On special request,
OBSOLETE PRODUCT RECOMMENDED REPLACEMENT PART
CA-46 General Purpose NPN Transistor Array OBSOLETE PRODUCT RECOMMENDED REPLACEMENT PART HFA46 DATASHEET FN4 Rev 6. December, The CA46 consists of five general purpose silicon NPN transistors on a common
Silicon NPN Planar RF Transistor
Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise applications such as preamplifiers, mixers and oscillators in analog and digital
MRF581 MRF581G MRF581A MRF581AG
G RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS *G Denotes RoHS Compliant, Pb free Terminal Finish Features Low Noise - 2.5 db @ 500 MHZ Gain at Optimum Noise Figure = 15.5 db @ 500 MHz Ftau - 5.0 GHz
Type Marking Pin Configuration Package BFP520 APs 1=B 2=E 3=C 4=E - - SOT343
BFP Low Noise Silicon Bipolar RF Transistor Low noise amplifier designed for low voltage applications, ideal for. V or. V supply voltage Common e.g. in cordless phones, satellite receivers and oscillators
BF776. High Performance NPN Bipolar RF Transistor
High Performance NPN Bipolar RF Transistor High performance low noise amplifier Low minimum noise figure of typ. 0.8 db @ 1.8 GHz For a wide range of non automotive applications such as WLAN, WiMax, UWB,
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Product description The is a wideband NPN RF heterojunction bipolar transistor (HBT). Feature list Low noise figure NF min = 1 db at 5.5 GHz, 3 V, 6 ma High gain G ms = 21 db at 5.5 GHz, 3 V, 15 ma OIP
C 2 B 1 E 1 E 2 B 2 C 1. Top View
MMDT446 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Complementary Pair One 424-Type NPN One 426-Type PNP Epitaxial Planar Die Construction Ideal for Medium Power Amplification
LM3146 High Voltage Transistor Array
LM3146 High Voltage Transistor Array General Description The LM3146 consists of five high voltage general purpose silicon NPN transistors on a common monolithic substrate Two of the transistors are internally
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF5943, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features Low Cost SO-8 Plastic Surface Mount Package.
MMBT3904. REVERSE VOLTAGE 60 Volts FORWARD CURRENT 0.2 Amperes NPN GENERAL PURPOSE TRANSISTOR SOT-23
MMBT394 NPN GENERAL PURPOSE TRANSISTOR REVERSE VOLTAGE 6 Volts FORWARD CURRENT.2 Amperes FEATURES For switching and amplifier applications. Complementary PNP type available (MMBT396) SOT-23 MECHANICAL
UNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD PNP PLANAR SILICON TRANSISTOR FEATURES SOT-89 * Low collector-to-emitter saturation voltage: V CE(SAT) =-0.4V max/i C =-A, I B =-0.A TO- TO-6 ORDERING INFORMATION Ordering
Part Ordering code Marking Remarks Package BFR90A BFR90AGELB-GS08 BFR90A Packed in Bulk TO-50(3)
Silicon NPN Planar RF Transistor Features High power gain Low noise figure High transition frequency Lead (Pb)-free component Component in accordance to RoHS 22/95/EC and WEEE 22/96/EC e3 3 2 1 2 E 3 1
Part Ordering code Marking Remarks MMBT2222A MMBT2222A-GS18 or MMBT2222A-GS08 1P Tape and Reel
Small Signal Transistor (NPN) Features NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. This transistor is also available in the TO-92 case with the type designation MPS2222A.
MULTIPLE (QUAD) NPN SILICON DUAL IN-LINE AND FLATPACK SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/559 JANTXV JANS
MULTIPLE (QUAD) NPN SILICON DUAL IN-LINE AND FLATPACK SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/559 DEVICES LEVELS 2N6989 2N6989U JAN 2N6990 JANTX JANTXV JANS ABSOLUTE MAXIMUM RATINGS (T C = +25
300mW, NPN Small Signal Transistor
300mW, NPN Small Signal Transistor FEATURES Low power loss, high efficiency Ideal for automated placement High surge current capability Compliant to RoHS directive 2011/65/EU and in accordance to WEEE
PD Characteristic Symbol Min Typ Max Unit. V(BR)CEO 15 Vdc. V(BR)CBO 20 Vdc. V(BR)EBO 3.0 Vdc. ICBO 100 nadc. ft 4.5 GHz. Ccb
SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line The transistor uses the same state of the art microwave transistor chip which features fine line geometry, ion implanted arsenic emitters
2SC2735 NPN. ADJ (Z) 1st. Edition UHF/VHF MPAK Emitter 2. Base 3. Collector
NPN ADJ-28-1244 (Z) 1st. Edition 2.12 UHF/VHF VHF MPAK 3 2 1 1. Emitter 2. Base 3. Collector (Ta = 25 ) V CBO 3 V V CEO 2 V V EBO 3 V I C 5 ma P C 15 mw Tj 15 Tstg 55 +15 Min Typ Max V (BR)CBO 3 V I C
NPN 9 GHz wideband transistor. High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability.
BFR52 Rev. 3 1 September 24 Product data sheet 1. Product profile 1.1 General description The BFR52 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package. 1.2 Features High power gain
UNISONIC TECHNOLOGIES CO., LTD MMBT5088/MMBT5089
UNISONIC TECHNOLOGIES CO., LTD MMBT5088/ NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION 3 The devices are designed for low noise, high gain, general purpose amplifier applications at collector currents from
UNISONIC TECHNOLOGIES CO., LTD PN2222A NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD PN2222A NPN GENERAL PURPOSE AMPLIFIER FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. ORDERING INFORMATION
NPN/PNP Silicon Complementary Small Signal Dual Transistor Qualified per MIL-PRF-19500/421
Available on commercial versions NPN/PNP Silicon Complementary Small Signal Dual Transistor Qualified per MIL-PRF-19500/421 DESCRIPTION Qualified Levels: JAN, JANTX, and JANTXV This 2N4854 device in a
MULTI CHIP ARRAY COMPLEMENTARY 4x 2N2222A 4x 2N2907A COMMON EMITTER BIPOLAR TRANSISTORS MCABT8E2207C6
MULTI CHIP ARRAY COMPLEMENTARY 4x 2N2222A 4x 2N2907A Hermetic MO-042AA (LCC6) Silicon Planar Epitaxial 4x 2N2222A NPN & 4x 2N2907A PNP Transistors In A Common Emitter High Speed Low Saturation Switching
COLLECTOR BASE EMITTER BC 557 BC556. mw mw/ C PD PD Characteristic Symbol Min Typ Max Unit V(BR)CEO BC557 BC558 V(BR)CBO BC557 BC558
SEMICONDUCTOR TECHNICAL DATA Order this document by /D PNP Silicon COLLECTOR 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol BC 556 BC 557 BC 558 Unit Collector Emitter oltage CEO 65 45 3 dc Collector Base
BFP420. NPN Silicon RF Transistor
BFP NPN Silicon RF Transistor For high gain low noise amplifiers For oscillators up to GHz Noise figure F =. db at. GHz outstanding G ms = db at. GHz Transition frequency f T = 5 GHz Gold metallization
LM3045 LM3046 LM3086 Transistor Arrays
LM3045 LM3046 LM3086 Transistor Arrays General Description The LM3045 LM3046 and LM3086 each consist of five general purpose silicon NPN transistors on a common monolithic substrate Two of the transistors
DISCRETE SEMICONDUCTORS DATA SHEET. BFG97 NPN 5 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14
DISCRETE SEMICONDUCTORS DATA SHEET File under Discrete Semiconductors, SC14 September 1995 DESCRIPTION NPN planar epitaxial transistor mounted in a plastic SOT223 envelope. It features excellent output
ZXT849K 30V NPN LOW SATURATION TRANSISTOR IN D-PAK. SUMMARY BV CEO = 30V : R SAT = 33m. typical; I C = 7A DESCRIPTION FEATURES APPLICATIONS PINOUT
30V NPN LOW SATURATION TRANSISTOR IN D-PAK SUMMARY BV CEO = 30V : R SAT = 33m typical; I C = 7A DESCRIPTION Packaged in the D-Pak outline this high current high performance 30V NPN transistor offers low
UNISONIC TECHNOLOGIES CO., LTD MPSA92/93
UNISONIC TECHNOLOGIES CO., LTD /93 HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The /93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. FEATURES * High
MARKING: FULL PART NUMBER
2N2060M SILICON DUAL NPN TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2060M is a silicon dual NPN transistor utilizing two individual chips mounted in a hermetically sealed metal case designed for
UNISONIC TECHNOLOGIES CO., LTD PN2222A NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD PN2222A NPN GENERAL PURPOSE AMPLIFIER FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. ORDERING INFORMATION
TIP120, 121, 122, 125, 126, 127
Features: Collector - emitter sustaining voltage - V CEO (sus) = 60 V (minimum) - TIP120, TIP125 80 V (minimum) - TIP121, TIP126 100 V (minimum) - TIP122, TIP127 Collector - emitter saturation voltage
Darlington Transistors
Features: Designed for general-purpose amplifier and low speed switching applications Collector-emitter sustaining voltage - V CEO (sus) = 60 V (minimum) - TIP120, TIP125 80 V (minimum) - TIP121, TIP126
Bias Resistor Transistor
SEMICONDUCTOR TECHNICAL DATA DTC ~ 8 DTC ~ / /7 DTC / Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed
BFQ67 / BFQ67R / BFQ67W
Not for new design, this product will be obsoleted soon Silicon NPN Planar RF Transistor BFQ67 / BFQ67R / BFQ67W Features Small feedback capacitance Low noise figure High transition frequency Lead (Pb)-free
Features. Description. Table 1. Device summary. Quality Level. Engineering Model
Hi-Rel NPN bipolar transistor 60 V, 50 ma Features Datasheet - production data 3 1 2 TO-18 1 2 3 3 4 1 2 LCC-3 LCC-3UB Figure 1. Internal schematic diagram Parameter Value BV CEO 60 V I C (max) 50 ma h
UNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator.
BFP620. Low Noise SiGe:C Bipolar RF Transistor
Low Noise SiGe:C Bipolar RF Transistor Highly linear low noise RF transistor Provides outstanding performance for a wide range of wireless applications Based on Infineon's reliable high volume Silicon
2N2219A 2N2222A HIGH SPEED SWITCHES
2N2219A 2N2222A HIGH SPEED SWITCHES PRELIMINARY DATA DESCRIPTION The 2N2219A and 2N2222A are silicon Planar Epitaxial NPN transistors in Jedec TO-39 (for 2N2219A) and in Jedec TO-18 (for 2N2222A) metal
UNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD NPN GENERAL PURPOSE AMPLIFIER FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. ORDERING INFORMATION Ordering
Type Marking Pin Configuration Package BFR380F FCs 1 = B 2 = E 3 = C TSFP-3
Linear Low Noise Silicon Bipolar RF Transistor High linearity low noise driver amplifier Output compression point 9.5 m @.8 GHz Ideal for oscillators up to 3.5 GHz Low noise figure. at.8 GHz Collector
2SC2873 2SC2873. Power Amplifier Applications Power Switching Applications. Maximum Ratings (Ta = 25 C)
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2873 Power Amplifier Applications Power Switching Applications Unit: mm Low saturation voltage: VCE (sat) =. V (max) (IC = A) High-speed switching
Type Marking Pin Configuration Package BFP450 ANs 1 = B 2 = E 3 = C 4 = E SOT343
NPN Silicon RF Transistor For medium power amplifiers Compression point P = +9 m at. GHz maximum available gain G ma = 5.5 at. GHz Noise figure F =.5 at. GHz Transition frequency f T = GHz Gold metallization