Data Sheet. AT Up to 6 GHz Medium Power Silicon Bipolar Transistor. Features. Description. 100 mil Package. High Output Power:

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1 AT-1 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Description Avago s AT-1 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-1 is housed in a hermetic, high reliability 1 mil ceramic package. The micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The emitter finger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium power applications. This device is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies. An optimum noise match near 5Ω up to 1 GHz, makes this device easy to use as a low noise amplifier. The AT-1 bipolar transistor is fabricated using Avago s 1 GHz ft Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, self-alignment techniques, and gold metalization in the fabrication of this device. Features High Output Power: 21. dbm Typical P 1 db at 2. GHz.5 dbm Typical P 1 db at. GHz High Gain at 1 db Compression: 1. db Typical G 1 db at 2. GHz 9.5 db Typical G 1 db at. GHz Low Noise Figure: 1.9 db Typical NF O at 2. GHz High Gain-Bandwidth Product: 8. GHz Typical f T Hermetic Gold-ceramic Microstrip Package 1 mil Package

2 AT-1 Absolute Maximum Ratings [1] Absolute Symbol Parameter Units Maximum V EBO Emitter-Base Voltage V 1.5 V CBO Collector-Base Voltage V V CEO Collector-Emitter Voltage V I C Collector Current ma 8 P T Power Dissipation [2,] mw 6 T j Junction Temperature C T STG Storage Temperature C -65 to Thermal Resistance [2,] : θ jc = 15 C/W 1. Permanent damage may occur if any of these limits are exceeded. 2. Tcase = 25 C.. Derate at 6.7 mw/ C for Tc > 11 C.. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. See MEASUREMENTS section Thermal Resistance for more information. Electrical Specifications, T A = 25 C Symbol Parameters and Test Conditions [1] Units Min. Typ. Max. S 21E 2 Insertion Power Gain; V CE = 8 V, I C = 5 ma f = 2. GHz db f =. GHz 5.5 P 1 db Power 1 db Gain Compression f = 2. GHz dbm 1. V CE = 8 V, I C = 5 ma f=. GHz.5 G 1 db 1 db Compressed Gain; V CE = 8 V, I C = 5 ma f = 2. GHz db 1. f =. GHz 9.5 NF O Optimum Noise Figure: V CE = 8 V, I C = 1 ma f = 2. GHz db 1.9 f =. GHz. G A NF O ; V CE = 8 V, I C = 1 ma f = 2. GHz db 1.5 f =. GHz 1. f T Gain Bandwidth Product: V CE = 8 V, I C = 5 ma GHz 8. h FE Forward Current Transfer Ratio; V CE = 8 V, I C = 5 ma I CBO Collector Cutoff Current; V CB = 8 V µa.2 I EBO Emitter Cutoff Current; V EB = 1 V µa. C CB Collector Base Capacitance [1] : V CB = 8 V, f = 1 MHz pf For this test, the emitter is grounded.

3 AT-1 Typical Performance, T A = 25 C S21E 2 GAIN (db) 8 1. GHz 2. GHz. GHz G1 db (db) P1 db (dbm) 2 8 P 1dB G 1dB 2. GHz. GHz 2. GHz. GHz G1 db (db) P1 db (dbm) 2 1 P 1dB G 1dB 1 V 6 V V 1 V 6 V V 1 5 Figure 1. Insertion Power Gain vs. Collector Current and Frequency. V CE = 8 V. 1 5 Figure 2. Output Power and 1 db Compressed Gain vs. Collector Current and Frequency. V CE = 8 V Figure. Output Power and 1 db Compressed Gain vs. Collector Current and Voltage. f = 2. GHz. 2 GAIN (db) MSG S 21E 2 MAG GAIN (db) G A NF O 2 1 NFO (db) FREQUENCY (GHz) Figure. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. V CE = 8 V, I C = 5 ma FREQUENCY (GHz) Figure 5. Noise Figure and Associated Gain vs. Frequency. V CE = 8 V, I C = 1 ma.

4 AT-1 Typical Scattering Parameters, Common Emitter, Z O = 5 Ω, T A = 25 C, V CE = 8 V, I C = 1 ma Freq. S 11 S 21 S S 22 GHz Mag. Ang. db Mag. Ang. db Mag. Ang. Mag. Ang AT-1 Typical Scattering Parameters, Common Emitter, Z O = 5 Ω, T A = 25 C, V CE = 8 V, I C = 5 ma Freq. S 11 S 21 S S 22 GHz Mag. Ang. db Mag. Ang. db Mag. Ang. Mag. Ang AT-1 Noise Parameters: V CE = 8 V, I C = 1 ma Freq. NF O Γ opt GHz db Mag Ang R N /

5 Ordering Information Part Number No. of Devices AT mil Package Dimensions. 1.2 EMITTER..58 BASE COLLECTOR 1. ±.2.1 ± EMITTER (unless otherwise specified) 1. Dimensions are in 2. Tolerances mm in.xxx = ±.5 mm.xx = ±.1.95 ±..57 ± For product information and a complete list of distributors, please go to our web site: Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries. Data subject to change. Copyright 8 Avago Technologies Limited. All rights reserved. Obsoletes AV1-22EN AV2-17EN April 29, 8

Data Sheet. AT Up to 6 GHz Medium Power Silicon Bipolar Transistor. Description. Features. 85 Plastic Package

Data Sheet. AT Up to 6 GHz Medium Power Silicon Bipolar Transistor. Description. Features. 85 Plastic Package AT-85 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Description Avago s AT-85 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-85 is