4.8 V NPN Common Emitter Output Power Transistor for GSM Class IV Phones. Technical Data AT-36408
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1 4.8 V NPN Common Emitter Output Power Transistor for GSM Class IV Phones Technical Data AT-3648 Features 4.8 Volt Pulsed Operation (pulse width = 577 µsec, duty cycle = 12.5%) +. dm P 9 MHz, Typ. 65% Collector 9 MHz, Typ. 9 d Power 9 MHz, Typ. Internal Input Pre-Matching Facilitates Cascading Applications Output Power Device for GSM Class IV Handsets SOIC-8 Surface Mount Plastic Package Outline P8 Pin Configuration ASE EMITTER EMITTER COLLECTOR ASE EMITTER COLLECTOR EMITTER Description Hewlett Packard s AT-3648 combines internal input prematching with low cost, NPN power silicon bipolar junction transistors in a SOIC-8 surface mount plastic package. This device is designed for use as the output device for GSM Class IV handsets. At 4.8 volts, the device features + dm pulsed output power, superior power added efficiency, and excellent gain, making the AT-3648 an excellent choice for battery powered systems. The AT-3648 is fabricated with Hewlett Packard s 1 GHz Ft Self- Aligned-Transistor (SAT) process. The die are nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, selfalignment techniques, and gold metalization in the fabrication of these devices E
2 AT-3648 Absolute Maximum Ratings Absolute Symbol Parameter Units Maximum [1] V EO Emitter-ase Voltage V 1.4 V CO Collector-ase Voltage V 16. V CEO Collector-Emitter Voltage V 9.5 I C Collector Current [2] A 1.7 P T Peak Power Dissipation [2, 3] W 8.6 T j Junction Temperature C 15 T STG Storage Temperature C -65 to 15 Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. Pulsed operation, pulse width = 577 µsec, duty cycle = 12.5%. 3. Derate at mw/ C for T C > 85 C. T C is defined to be the temperature of the collector pins 3 and 6, where the lead contacts the circuit board. 4. Using the liquid crystal technique, V CE =4.5 V, I c =1 ma, T j =15 C, 1-2 µm hot-spot resolution. Thermal Resistance [4] : θ jc = 6 C/W Electrical Specifications, T C = 25 C Symbol Parameters and Test Conditions Units Min. Typ. Max. Freq. = 9 MHz, V CE = 4.8 V, I CQ = 5 ma, pulsed operation, pulse width = 577 µsec, duty cycle = 12.5%, Test Circuit A,unless otherwise specified P out Output Power [1] P in = +26 dm dm η C Collector Efficiency [1] P in = +26 dm % H2 2nd Harmonic [1] F = 9 MHz dc -5 H3 3rd Harmonic [1] F = 9 MHz dc -4 Mismatch Tolerance, No Damage [1] P out = + dm 7:1 any phase, 2 sec duration V EO Emitter-ase reakdown Voltage I E =.8 ma, open collector V 1.4 V CO Collector-ase reakdown Voltage I C = 4. ma, open emitter V 16. V CEO Collector-Emitter reakdown Voltage I C = 2. ma, open base V 9.5 h FE Forward Current Transfer Ratio V CE = 3 V, I C = 18 ma I CEO Collector Leakage Current V CEO = 5 V µa 5 Note: 1. With external matching on input and output, tested in a 5 ohm environment. Refer to Test Circuit A (GSM). 4-82
3 AT-3648 Typical Performance, T C = 25 C Frequency = 9 MHz, V CE = 4.8 V, I CQ = 5 ma, pulsed operation, pulse width = 577 µsec, duty cycle = 12.5%, Test Circuit A (GSM), unless otherwise specified. OUTPUT POWER (dm) Γ source = Γ load = P out η c INPUT POWER (dm) Figure 1. Output Power and Collector Efficiency vs. Input Power COLLECTOR EFFICIENCY (%) OUTPUT POWER (dm) Γ source = Γ load = V 4.8 V 6. V INPUT POWER (dm) Figure 2. Output Power vs. Input Power Over ias Voltage. COLLECTOR EFFICIENCY (%) Γ source = Γ load = V 4.8 V 6. V INPUT POWER (dm) Figure 3. Collector Efficiency vs. Input Power Over ias Voltage. OUTPUT POWER (dm) Γ source = Γ load = T C = +85 C 28 T C = +25 C T C = 4 C INPUT POWER (dm) Figure 4. Output Power vs. Input Power Over Temperature. OUTPUT POWER (dm) Pin = +26 dm Γ source = Γ load = η c P out FREQUENCY (MHz) Figure 5. Output Power and Collector Efficiency vs. Frequency. Note: Tuned at 9 MHz, then swept over frequency COLLECTOR EFFICIENCY (%) RETURN LOSS (d) Output R.L. -2 Γ source = Γ load = FREQUENCY (MHz) Input R.L. Figure 6. Input and Output Return Loss vs. Frequency. 4-83
4 AT-3648 Typical Large Signal Impedances V CE = 4.8 V, I CQ = 5 ma, Pulsed Operation, P out = +. dm Freq. Γ source Γ load MHz Mag. Ang. Mag. Ang Ccb (pf) Vcb (V) Figure 7. Collector-ase Capacitance vs. Collector-ase Voltage (DC Test). SPICE Model Parameters Die Model Packaged Model Label F IKF ISE NE VAF NF TF XTF VTF ITF PTF XT R IKR ISC NC VAR NR CPad Die Area = 1.2 CPad =.3 pf Value E E E E1 Label TR EG IS XTI CJC VJC MJC XCJC FC CJE VJE MJE R IR RM RE RC CPad Value 1E E E E E2 C CPad E1 C Cpkg1 Cpkg1 Cpkg1 E2 Label Rwire Lwire Cpkg1 Cpkg2 LE1 Cpkg2 Cpkg2 Cpkg2 Value.63 Ω 1.45 nh 1.3 Ω.52 nh.4 pf 1.2 pf.3 nh Lwire Rwire Lwire Rwire Label LE2 Cbase Rwbase Rwbb Lwbb Rwbase Cbase Rwbase L= Rwbase R= 1 Ω Rwbase Cbase L= R=1 Ω Value.64 nh 46. pf.2 Ω 1.19 nh.1 Ω.1 nh Lwbb Rwbb Lwbb Rwbb Lwbb Rwbb Die LE1 LE2 Die LE1 LE2 Die LE1 LE2 Die LE1 LE2 4-84
5 AT-3648 Typical Scattering Parameters, Common Emitter, Z O = 5 Ω V CE = 3.6 V, I c = 2 ma, T c = 25 C Freq. S 11 S 21 S 12 S 22 GHz Mag. Ang. d Mag. Ang. d Mag. Ang. Mag. Ang V CE = 4.8 V, I c = 2 ma, T c = 25 C V CE = 6. V, I c = 2 ma, T c = 25 C Typical Performance MAG MAG MAG GAIN (d) S 21 2 GAIN (d) S 21 2 GAIN (d) S FREQUENCY (GHz) Figure 8. Insertion Power Gain, Maximum Available Gain, and Maximum Stable Gain vs. Frequency. V CE = 3.6V, Ic = 2 ma FREQUENCY (GHz) Figure 9. Insertion Power Gain, Maximum Available Gain, and Maximum Stable Gain vs. Frequency. V CE = 4.8V, Ic = 2 ma FREQUENCY (GHz) Figure 1. Insertion Power Gain, Maximum Available Gain, and Maximum Stable Gain vs. Frequency. V CE = 6.V, Ic = 2 ma. 4-85
6 Test Circuit A: Test Circuit oard 9 MHz (GSM) V V CC 38.1 (1.5) V T1 C1 INPUT C3 R2 R1 R3 C2 PA2 DEMO L1 R4 C4 C6 L2 R5 C7 C5 MFG14 C8 C9 V CC 9/96 C1 OUTPUT C1 C2 C3 C4 C5 C6 C7 C8 C9 C1 R1 R2 R3 R4 R5 T1 L1 L2 39. pf 39. pf 1. nf 12.5 pf 11.5 pf 1. nf 39. pf 1.5 µf 1. µf 39. pf 2.2 Ω 619. Ω 2.2 Ω 1. Ω 1. Ω MT 2222A 18. µh 18. µh Pulse Test V CE = 4.8 V I CQ = 5 ma Freq. = 9 MHz NOTE: Dimensions are shown in millimeters (inches) (3.) Test Circuit: FR-4 Microstrip, glass epoxy board Dielectric Constant = 4.5 Thickness =.79 (.31) Test Circuit A: Test Circuit Schematic 9 MHz (GSM) 2.2 Ω V 619 Ω Pulse Test V CE = 4.8 V I CQ = 5 ma Freq. = 9 MHz V CC C E DC Transistor 2.2 Ω 1 nf 1 Ω 1 Ω 18 µh 39 pf 39 pf 8 Ω 8 Ω 9 MHz 9 MHz 1 nf 1.5 µf 1 µf 18 µh RF IN 39 pf 5 Ω 5 Ω = 4.88 (.192) 11.5 pf 39 pf RF OUT 12.5 pf = 1.52 (.6) 4-86
7 Part Number Ordering Information Part Number No. of Devices Container AT-3648-TR1 1 7" Reel AT-3648-LK 25 Carrier Tape Package Dimensions SOIC-8 Surface Mount Plastic Package 1.27 (.5) 6x 3.8/4. (.1497/.1574) 5.84/6.2 (.23/.244) Pin 1 1./1.75 (.532/.688) 4.72/5. (.186/.197).38 ±.1 (.15 ±.4) x 45 /8.33/.51 (.13/.2) 8X.1/.25 (.4/.98) Note: 1. Dimensions are shown in millimeters (inches)..1 (.4).41/1.27 (.16/.5).19/.25 (.75/.98) 4-87
8 Tape Dimensions and Product Orientation For Package SOIC-8 REEL CARRIER TAPE USER FEED DIRECTION COVER TAPE t COVER TAPE D P 2 P 1 PITCHES CUMULATIVE TOLERANCE ON TAPE ±.2 MM (±.8) EMOSSMENT E K C A F W USER FEED DIRECTION T CENTER LINES OF CAVITY P 1 D 1 CAVITY PERFORATION DESCRIPTION SYMOL SIZE (mm) SIZE (INCHES) LENGTH WIDTH DEPTH PITCH OTTOM HOLE DIAMETER DIAMETER PITCH POSITION A K P 1 D 1 D P E 6.45 ± ± ±.1 8. ± min /- 4. ± ± ±.4.22 ±.4.83 ± ±.4.59 min /-.157 ±.4.69 ±.4 CARRIER TAPE WIDTH THICKNESS W t 8. ± ± ±.12.1 ±.5 COVER TAPE WIDTH TAPE THICKNESS C T 9.19 ±.1.51 ± ±.4.2 ±.4 DISTANCE ETWEEN CENTERLINE CAVITY TO PERFORATION (WIDTH DIRECTION) CAVITY TO PERFORATION (LENGTH DIRECTION) F P ±.5 2. ± ±.2.79 ±
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NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT
SD1488 RF POWER BIPOLAR TRANSISTORS UHF MOBILE APPLICATIONS
RF POWER BIPOLAR TRANSISTORS UHF MOBILE APPLICATIONS FEATURES SUMMARY 470 MHz 12.5 VOLTS EFFICIENCY % COMMON EMITTER P OUT = 38 W MIN. WITH 5.8 db GAIN DESCRIPTION The SD1488 is a 12.5 V Class C epitaxial
NPN SILICON HIGH FREQUENCY TRANSISTOR 2.0 ± ± 0.1
FEATURES SMALL PACKAGE STYLE: NE686 Die in a mm x 1.5 mm package LOW NOISE FIGURE: NF = 1.5 db TYP at GHz HIGH GAIN: S1E = 9 db TYP at GHz HIGH GAIN BANDWIDTH: ft = 13 GHz LOW CURRENT OPERATION DESCRIPTION
Surface Mount Package SOT-363 (SC-70) Pin Connections and Package Marking. OUTPUT and V d 5 GND 4 V CC
3. GHz Low Noise Silicon MMIC Amplifier Technical Data INA-5463 Features Ultra-Miniature Package Single 5 V Supply (29 ma) 21.5 db Gain (1.9 GHz) 8. dbm P 1dB (1.9 GHz) Positive Gain Slope Unconditionally
Features. Specifications. Applications
ATF-531P8 High Linearity Enhancement Mode [1] Pseudomorphic HEMT in 2x2 mm 2 LPCC [3] Package Data Sheet Description Avago Technologies ATF 531P8 is a single-voltage high linearity, low noise E phemt housed
HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS
DESCRIPTION The HDX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage
8Fx. Data Sheet ATF Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package. Description. Features.
ATF-58143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package Data Sheet Description Avago Technologies ATF-58143 is a high dynamic range, low noise E-PHEMT housed in a 4-lead
Surface Mount RF PIN Low Distortion Attenuator Diodes. Technical Data. HSMP-381x Series and HSMP-481x Series. Features
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LMUN2211LT1 SERIES. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LESHAN RADIO COMPANY, LTD.
NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT
MOC215-M MOC216-M MOC217-M
DESCRIPTION These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package.
DATA SHEET P D * mw C/W. Packing. Packing SOT-23 SOT /Reel 3000/Reel SOT-23 SOT /Reel 3000/Reel SOT-23.
DATA SHEET SEMICONDUCTOR NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor
Data Sheet ATF-511P8. High Linearity Enhancement Mode [1] Pseudomorphic HEMT in 2x2 mm 2 LPCC [3] Package. 1Px. Features.
![Data Sheet ATF-511P8. High Linearity Enhancement Mode [1] Pseudomorphic HEMT in 2x2 mm 2 LPCC [3] Package. 1Px. Features.](/thumbs/84/89103363.jpg "Data Sheet ATF-511P8. High Linearity Enhancement Mode [1] Pseudomorphic HEMT in 2x2 mm 2 LPCC [3] Package. 1Px. Features.")
ATF-511P8 High Linearity Enhancement Mode [1] Pseudomorphic HEMT in 2x2 mm 2 LPCC [3] Package Data Sheet Description Avago Technologies s ATF-511P8 is a single-voltage high linearity, low noise E-pHEMT
Bias Resistor Transistor
SEMICONDUCTOR TECHNICAL DATA DTC ~ 8 DTC ~ / /7 DTC / Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed
MGA GHz 3 V, 17 dbm Amplifier. Data Sheet
MGA-853.1 GHz 3 V, 17 dbm Amplifier Data Sheet Description Avago s MGA-853 is an economical, easy-to-use GaAs MMIC amplifier that offers excellent power and low noise figure for applications from.1 to
NPN SiGe RF IC IN A 8-PIN LEAD-LESS MINIMOLD
NPN SiGe RF ANALOG INTEGRATED CIRCUIT PA901TU NPN SiGe RF IC IN A 8-PIN LEAD-LESS MINIMOLD DESCRIPTION The PA901TU is a silicon germanium HBT IC designed for the power amplifier of 5.8 GHz cordless phone
HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS
DESCRIPTION The HGX series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor
IRG7R313UPbF. Key Parameters V CE min 330 V V CE(ON) I C = 20A 1.35 V I RP T C = 25 C 160 A T J max 150 C
PDP TRENCH IGBT PD - 97484 Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications l Low V CE(on) and Energy per Pulse (E PULSE TM ) for improved
MA02303GJ-R13. RF Power Amplifier IC for 2.4 GHz ISM. Features. Functional Schematic. PIN Configuration. Description. Ordering Information
RF Power Amplifier C for 2.4 GHz SM Features Perfect for 82.11, HOP, SWAP, HOMERF, luetooth, WDECT, MDS, MMDS Single Positive Supply Power Added Efficiency As High As Percent P 3 = +43 dm Output Power
DISCRETE SEMICONDUCTORS DATA SHEET. BLT70 UHF power transistor. Product specification 1996 Feb 06
DISCRETE SEMICONDUCTORS DATA SHEET 1996 Feb 6 FEATURES Very high efficiency Low supply voltage. APPLICATIONS 4 Hand-held radio equipment in common emitter class-ab operation in the 9 MHz communication
MGA Current Adjustable Low Noise Amplifier
Products > RF ICs/Discretes > RF ICs > GaAs Amplifiers, Mixers, Switches > MGA-68563 MGA-68563 Current Adjustable Low Noise Amplifier Description The MGA-68563 is an easy to use, economical GaAs MMIC amplifier
BFP420. NPN Silicon RF Transistor
NPN Silicon RF Transistor For high gain low noise amplifiers For oscillators up to GHz Noise figure F =. at. GHz outstanding G ms = at. GHz Transition frequency f T = 5 GHz Gold metallization for high
DISCRETE SEMICONDUCTORS DATA SHEET. BLV58 UHF linear push-pull power transistor
DISCRETE SEMICONDUCTORS DATA SHEET UHF linear push-pull power transistor September 1991 FEATURES High power gain Double stage internal input matching for high input impedance Diffused emitter-ballasting
HMPP-386x Series MiniPak Surface Mount RF PIN Diodes
HMPP-86x Series MiniPak Surface Mount RF PIN Diodes Data Sheet Description/Applications These ultra-miniature products represent the blending of Avago Technologies proven semiconductor and the latest in
Transistor Output SMALL OUTLINE OPTOISOLATORS TRANSISTOR OUTPUT SCHEMATIC. MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Rating Symbol Value Unit
Transistor Output These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic
Data Sheet. MGA GHz 3 V, 14 dbm Amplifier. Description. Features. Applications. Simplified Schematic
MGA-8153.1 GHz 3 V, 1 dbm Amplifier Data Sheet Description Avago s MGA-8153 is an economical, easy-to-use GaAs MMIC amplifier that offers excellent power and low noise figure for applications from.1 to
SD1731 (TH562) RF POWER BIPOLAR TRANSISTORS HF SSB APPLICATIONS. Figure 1. Package
RF POWER BIPOLAR TRANSISTORS HF SSB APPLICATIONS FEATURES SUMMARY OPTIMIZED FOR SSB 30 MHz 50 VOLTS EFFICIENCY 40% COMMON EMITTER GOLD METALLIZATION P OUT = 220 W PEP WITH 13 db GAIN Figure 1. Package
Surface Mount RF PIN Diodes. Technical Data. HSMP-383x Series. Features. Package Lead Code Identification (Top View)
Surface Mount RF PIN Diodes Technical Data HSMP-383x Series Features Diodes Optimized for: Low Capacitance Switching Low Current Attenuator Surface Mount SOT-23 Package Single and Dual Versions Tape and
Features. Specifications. Applications. Vcc
AVT-55689 50 6000 MHz InGaP HBT Gain Block Data Sheet Description Avago Technologies AVT-55689 is an economical, easy-touse, general purpose InGaP HBT MMIC gain block amplifier utilizing Darlington pair
Surface Mount Package SOT-363 (SC-70) Pin Connections and Package Marking GND 1 5 GND. Note: Package marking provides orientation and identification.
.1 6 GHz 3 V, 1 dbm Amplifier Technical Data MGA-81563 Features +1.8 dbm P 1dB at. GHz +17 dbm P sat at. GHz Single +3V Supply.8 db Noise Figure at. GHz 1. db Gain at. GHz Ultra-miniature Package Unconditionally
Data Sheet. MGA-632P8 Low Noise, High Linearity Active Bias Low Noise Amplifier. Features. Description. Specifications.
MGA-632P8 Low Noise, High Linearity Active Bias Low Noise Amplifier Data Sheet Description Avago Technologies MGA-632P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier (LNA) with active bias.
DISCRETE SEMICONDUCTORS DATA SHEET. BLT53 UHF power transistor
DISCRETE SEMICONDUCTORS DATA SHEET May 99 FEATURES Emitter-ballasting resistors for an optimum temperature profile Gold metallization ensures excellent reliability Withstands full load mismatch. DESCRIPTION
PD A IRG4PC60F. Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR. Features. n-channel TO-247AC. 1
PD - 94442A INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features C Fast: Optimized for medium operating frequencies ( -5 khz in hard switching, >20 khz in resonant mode). Generation 4 IGBT design
Features. Specifications. Notes: Package marking provides orientation and identification 53 = Device Code X = Month of Manufacture = Pin 1
AVT-53663 DC 6000 MHz InGaP HBT Gain Block Data Sheet Description Avago Technologies AVT-53663 is an economical, easyto-use, general purpose InGaP HBT MMIC gain block amplifier utilizing Darlington pair