HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS

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1 DESCRIPTION The HGX series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor which has an integral base-emitter resistor to optimize elevated temperature characteristics. HG HG2 HG3 FEATURES High BV CEO - Minimum 00 V for HG - Minimum 80 V for HG2 - Minimum 55 V for HG3 High sensitivity to low input current Minimum 500 percent CTR at I F = ma Low leakage current at elevated temperature (maximum 00 µa at 80 C) Underwriters Laboratory (UL) recognized File# E90700 APPLICATIONS CMOS logic interface Telephone ring detector Low input TTL interface Power supply isolation Replace pulse transformer ANODE CATHODE 2 6 BASE 5 COLLECTOR N/C 3 4 EMITTER NOTE All dimensions are in inches (millimeters) ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Units TOTAL DEVICE Storage Temperature T STG -55 to +50 C Operating Temperature T OPR -55 to +00 C Lead Solder Temperature T SOL 260 for 0 sec C Total Device Power T A = 25 C 260 mw P Derate above 25 C D 3.5 mw/ C Input-Output Isolation Voltage V ISO 5300 Vac(rms) EMITTER Forward Input Current I F 60 ma Reverse Input Voltage V R 6.0 V Forward Current - Peak (µs pulse, 300pps) I F (pk) 3.0 A LED Power T A = 25 C 00 mw P Derate above 25 C D.8 mw/ C DETECTOR Collector-Emitter Voltage HG V CEO 00 V HG2 80 HG3 55 Detector Power T A = 25 C 200 mw P Derate above 25 C D 2.67 mw/ C

2 HG, HG2, HG3 ELECTRICAL CHARACTERISTICS (T A = 25 C Unless otherwise specified.) INDIVIDUAL COMPONENT CHARACTERISTICS Characteristic Test Conditions Symbol Device Min Typ** Max Unit EMITTER Forward Voltage Forward Voltage Temp. Coefficient (I F = 0 ma) V F ALL.3.50 V VF TA ALL -.8 mv/ C Reverse Breakdown Voltage (I R = 0 µa) BV R ALL V Junction Capacitance (V F = 0 V, f = MHz) ALL 50 pf C (V J F = V, f = MHz) ALL 65 pf Reverse Leakage Current (V R = 3.0 V) I R ALL µa DETECTOR HG 00 Breakdown Voltage (I C =.0 ma, I F = 0) BV CEO HG2 80 Collector to Emitter HG3 55 Collector to Base (I C = 00 µa) HG 00 V BV CBO HG2 80 HG3 55 Emitter to Base BV EBO ALL 7 0 Leakage Current Collector to Emitter TRANSFER CHARACTERISTICS (V CE = 80 V, I F = 0) HG (V CE = 60 V, I F = 0) HG2 00 na (V CE = 30 V, I F = 0) I CEO HG3 (V CE = 80 V, I F = 0, T A = 80 C) HG (V CE = 60 V, I F = 0, T A = 80 C) HG2 00 µa DC Characteristic Test Conditions Symbol Device Min Typ** Max Unit EMITTER Current Transfer Ratio Collector to Emitter (I F = 0 ma, V CE = V) HG/2 00 (000) (I F = ma, V CE = 5 V) CTR ma (%) HG/2 5 (500) HG3 2 (200) (I F = 6 ma, I C = 50 ma) HG/ Saturation Voltage (I F = ma, I C = ma) V CE (SAT) HG/ V (I F = 20 ma, I C = 50 ma) HG TRANSFER CHARACTERISTICS Characteristic Test Conditions Symbol Device Min Typ** Max Unit SWITCHING TIMES (R L = 00, I F = 0 ma) t on ALL 5 Turn-on Time µs Turn-off Time (V CE = 5 V) Pulse Width 300 µs, f 30 Hz) t off ALL 00 ** All typical values at T A = 25 C

3 HG, HG2, HG3 Fig. Output Current vs. Input Current Fig. 2 Normalized Output Current vs. Temperature 0 00 IC - NORMALIZED OUTPUT CURRENT V CE = 5 V I F = ma IC - NORMALIZED OUTPUT CURRENT 0 0. I F = 50 ma I F = 5 ma I F = ma I F = 0.5 ma V CE = 5 V I F = ma T A = 25 C I F - LED INPUT CURRENT(mA) T A - AMBIENT TEMPERATURE ( C) Fig. 3 Output Current vs. Collector - Emitter Voltage Fig. 4 Collector-Emitter Dark Current vs. Ambient Temperature IC - NORMALIZED OUTPUT CURRENT 0 0. V CE = 5 V I F = ma T A = 25 C I F = 50 ma I F = 0 ma I F = 2 ma I F = ma I F = 0.5 ma ICEO - DARK CURRENT (na) V CE = 30V V CE = 80V V CE = 0V V CE - COLLECTOR - EMITTER VOLTAGE (V) T A - AMBIENT TEMPERATURE ( C) Fig. 5 Input Current vs. Total Switching Speed (Typical Values) 0 IF - FORWARD CURRENT (ma) V CC = 5 V I F = 0 ma R L = 00 Ω R L = 0 Ω R L = 00 Ω R L = k Ω t on + t off - TOTAL SWITCHING SPEED (NORMALIZED)

4 HG, HG2, HG3 Package Dimensions (Through Hole) Package Dimensions (Surface Mount) 3 2 PIN ID (8.89) (8.38) 2 PIN ID (6.86) (6.0) (6.86) (6.0) SEATING PLANE (.78) (.4) (8.89) (8.38) (.78) (.4) (7.62) (5.08) 0.35 (3.43) (5.08) 0.65 (4.8) 0.06 (0.4) (0.20) 0.54 (3.90) 0.00 (2.54) (0.56) 0.06 (0.4) 0.00 (2.54) (0.5) 0.06 (0.40) (0.20) 0 to (7.62) (0.56) 0.06 (0.4) (0.5) 0.00 (2.54) Lead Coplanarity : (0.0) MAX 0.06 (0.40) 0.35 (8.00) (0.30) MAX Package Dimensions (0.4 Lead Spacing) 3 2 PIN ID. Recommended Pad Layout for Surface Mount Leadform (6.86) (6.0) (.78) (.52) SEATING PLANE (5.08) 0.35 (3.43) (8.89) (8.38) (.78) (.4) (0.0) 0.45 (0.54) (7.49) 0.00 (2.54) (0.76) 0.54 (3.90) 0.00 (2.54) 0.06 (0.40) (0.20) (0.56) 0.06 (0.4) 0.00 (2.54) (0.6) 0 to 5 NOTE All dimensions are in inches (millimeters)

5 HG, HG2, HG3 ORDERING INFORMATION Option Order Entry Identifier Description S.S Surface Mount Lead Bend SD.SD Surface Mount; Tape and reel W.W 0.4 Lead Spacing VDE W.300W VDE 0884, 0.4 Lead Spacing 3S.3S VDE 0884, Surface Mount 3SD.3SD VDE 0884, Surface Mount, Tape & Reel QT Carrier Tape Specifications ( D Taping Orientation) 4.85 ± ± ± ± ± 0. Ø.55 ± ± ± ± ± ± MAX 0.30 ± 0.20 Ø.6 ± 0. User Direction of Feed NOTE All dimensions are in millimeters

6 DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness Fairchild Semiconductor Corporation

HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS

HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS DESCRIPTION The HDX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage