FOD852 4-Pin High Operating Temperature Photodarlington Optocoupler

Transcription

1 FOD852 4-Pin High Operating Temperature Photodarlington Optocoupler Features Applicable to Pb-free IR reflow soldering Compact 4-pin package High current transfer ratio: % minimum C-UL, UL, and VDE approved High input-output isolation voltage of 5Vrms High operating temperature of C Applications Power supply regulators Digital logic inputs Microprocessor inputs Functional Block Diagram Description December 28 The FOD852 consists of gallium arsenide infrared emitting diode driving a silicon photodarlington output (with integral base-emitter resistor) in a 4-pin dual in-line package. ANODE 4 COLLECTOR CATHODE 2 3 EMITTER 4 FOD852 Rev..2.

2 Absolute Maximum Ratings (T A = 25 C Unless otherwise specified.) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Parameter Value Units TOTAL DEVICE INPUT OUTPUT T STG Storage Temperature -55 to +25 C T OPR Operating Temperature -3 to + C T SOL Lead Solder Temperature 26 for sec C P TOT Total Device Power Dissipation 2 mw I F Continuous Forward Current 5 ma V R Reverse Voltage 6 V P D LED Power Dissipation 7 mw V CEO Collector-Emitter Voltage 3 V V ECO Emitter-Collector Voltage. V I C Continuous Collector Current 5 ma P C Collector Power Dissipation 5 mw FOD852 Rev..2. 2

3 Electrical Characteristics (T A = 25 C unless otherwise specified.) Individual Component Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit INPUT V F Forward Voltage I F = ma.2.4 V I R Reverse Current V R = 4V µa C t Terminal Capacitance V =, f = khz 3 25 pf OUTPUT I CEO Collector Dark Current V CE = 2V, I F = 2 na BV CEO Collector-Emitter Breakdown Voltage I C =.ma, I F = 3 V BV ECO Emitter-Collector Breakdown Voltage I E = µa, I F =. V Transfer Characteristics Symbol DC Characteristic Test Conditions Min. Typ. Max. Unit I C Collector Current I F = ma, V CE = 2V 4 f ma CTR Current Transfer Ratio (), 4, 5, % V CE (sat) Collector-Emitter Saturation I F = 2mA, I C = ma.2 V Voltage R iso Isolation Resistance DC5V 4~6% R.H. 5x x Ω C f Floating Capacitance V =, f = MHz.6 pf f C Cut-Off Frequency V CE = 2V, I C = 2mA, R L = Ω, -3dB 7 khz t r Response Time (Rise) V CE = 2V, I C = 2mA, R L = Ω 3 µs t f Response Time (Fall) 2 µs Isolation Characteristics Symbol Characteristic Test Conditions Min. Typ. Max. Units V ISO Input-Output Isolation f = 6Hz, t = min, I I-O 2µA 5 Vac(rms) Voltage R ISO Isolation Resistance V I-O = 5 VDC 5 x Ω C ISO Isolation Capacitance V I-O =, f = MHz.6. pf Note:. Current Transfer Ratio (CTR) = I C /I F x %. FOD852 Rev..2. 3

4 Typical Electrical/Optical Characteristic Curves (T A = 25 C Unless otherwise specified.) FORWARD CURRENT I F (ma) COLLECTOR-EMITTER SATURATION VOLTAGE V CE (sat) (V) Fig. Forward Current vs. Ambient Temperature AMBIENT TEMPERATURE T A ( C) Fig. 3 Collector-Emitted Saturation Voltage vs. Forward Current 5 Ic =5mA 4.5 ma 3mA 4 5mA 3.5 7mA ma FORWARD CURRENT I F (ma) 5 COLLECTOR POWER DISSIPATION PC (mw) FORWARD CURRENT I F (ma) Fig. 2 Collector Power Dissipation vs. Ambient Temperature AMBIENT TEMPERATURE T A ( C) Fig. 4 Forward Current vs. Forward Voltage C 8 C 4 C 6 C 2 C FORWARD VOLTAGE V F (V).9 CURRENT TRANSFER RATIO CTR ( %) V CE = 2V Fig. 5 Current Transfer Ratio vs. Forward Current FORWARD CURRENT I F (ma) COLLECTOR CURRENT I C (ma) Fig. 6 Collector Current vs. Collector-Emitter Voltage m A 2.5mA 5m A 2mA 8 3m A mA ma PC (MAX.) I F =.5mA COLLECTOR-EMITTER VOLTAGE V CE (V) FOD852 Rev..2. 4

5 Typical Electrical/Optical Characteristic Curves (T A = 25 C Unless otherwise specified.) RELATIVE CURRENT TRANSFER RATIO (%) COLLECTOR DARK CURRENT I CEO (na) Fig. 7. Relative Current Transfer Ratio vs. Ambient Temperature VCE = 2V IF = ma VCE = 2V AMBIENT TEMPERATURE T A ( C) Fig. 9 Collector Dark Current vs. Ambient Temperature AMBIENT TEMPERATURE T A ( C) COLLECTOR-EMITTER SATURATION VOLTAGE V CE (sat) (V) RESPONSE TIME (µs) Fig. 8 Collector-Emitter Saturation Voltage vs. Ambient Temperature.2 IF = 2mA. IC = ma AMBIENT TEMPERATURE T A ( C) VCE = 2V IC = 2mA Fig.. Response Time vs. Load Resistance. LOAD RESISTANCE R L (kω) tr tf td ts Fig.. Frequency Response Test Circuit for Response Time VOLTAGE GAIN A V (db) VCE = 2V IC = 2mA RL=kΩ Ω Ω Input Vcc Output R R D L Input Output td tr Test Circuit for Frequency Response Vcc ts % 9% tf. FREQUENCY f (khz) 5 R D R L Output FOD852 Rev..2. 5

6 Package Dimensions Through Hole SEATING PLANE.5 (3.8). (2.8).3 (3.3).9 (2.3). (2.79).9 (2.29).2 (5.).6 (4.).4" Lead Spacing SEATING PLANE.2 (5.).6 (4.).3 (3.3).9 (2.3).5 (3.8). (2.8).24 (.6).6 (.4).57 (4.).8 (3.).2 (.5) TYP.24 (.6).6 (.4).57 (4.).8 (3.). (2.79).9 (2.29).32 (7.92).288 (7.32).276 (7.).236 (6.). (.26).393 (9.98).3 (7.62).32 (7.92).288 (7.32).276 (7.).236 (6.). (2.8). (.8).42 (.66).38 (9.66).29 (7.4).252 (6.4). (.26) Surface Mount SEATING PLANE.5 (.3).43 (.). (2.79).9 (2.29).2 (5.).6 (4.).57 (4.).8 (3.).24 (.6).4 (.) Lead Coplanarity.4 (.) MAX.32 (7.92).288 (7.32).276 (7.).236 (6.).49 (.25).3 (.76).42 (.46).388 (9.86) Surface Mount (Footprint Dimensions) (.26) Note: All dimensions are in inches (millimeters) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor s online packaging area for the most recent package drawings: FOD852 Rev..2. 6

7 Ordering Information Option Order Entry Identifier Description S.S Surface Mount Lead Bend SD.SD Surface Mount; Tape and reel W.W.4" Lead Spacing 3.3 VDE Approved 3W.3W VDE Approved,.4" Lead Spacing 3S.3S VDE Approved, Surface Mount 3SD.3SD VDE Approved, Surface Mount, Tape & Reel Marking Information 3 V 4 X Definitions Fairchild logo 2 Device number 3 VDE mark (Note: Only appears on parts ordered with VDE option See order entry table) 4 One digit year code 5 Two digit work week ranging from to 53 6 Assembly package code 5 ZZ 852 Y 6 2 FOD852 Rev..2. 7

8 Carrier Tape Specifications Ø.55±.5 Note: All dimensions are in millimeters. Symbol Description Dimensions in mm (inches) W Tape wide 6 ±.3 (.63) P Pitch of sprocket holes 4 ±. (.5) F P 2 Distance of compartment 7.5 ±. (.295) 2 ±. (.79) P Distance of compartment to compartment 2 ±. (.472) A Compartment.45 ±. (.4) B 5.3 ±. (.29) K 4.25 ±. (.67) P 2 P A P.75±. F B W.3±.5 K FOD852 Rev..2. 8

9 Lead Free Recommended IR Reflow Condition Temperature ( C) Profile Feature Pb-Sn solder assembly Lead Free assembly Preheat condition (Tsmin-Tsmax / ts) C ~ 5 C 6 ~ 2 sec Melt soldering zone 83 C 6 ~ 2 sec Recommended Wave Soldering condition 5 C ~ 2 C 6 ~2 sec 27 C 3 ~ 9 sec Peak temperature (Tp) 24 +/-5 C 26 +/-5 C Ramp-down rate 6 C/sec max. 6 C/sec max. Profile Feature Tp Tsmax Tsmin 25 C Peak temperature (Tp) ts (Preheat) Time (sec) For all solder assembly Max 26 C for sec Ramp-down Soldering zon FOD852 Rev..2. 9

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