FOD814 Series, FOD617 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers
|
|
- Jason Houston
- 5 years ago
- Views:
Transcription
1 FOD84 Series, FOD67 Series, FOD87 Series 4-Pin High Operating Temperature Phototransistor Optocouplers Features AC input response (FOD84 only) Applicable to Pb-free IR reflow soldering Compact 4-pin package Current transfer ratio in selected groups: FOD67A: 4 8% FOD87: 5 6% FOD67B: 63 25% FOD87A:8 6% FOD67C: 2% FOD87B: 3 26% FOD67D: 6 32% FOD87C:2 4% FOD84: 2 3% FOD87D:3 6% FOD84A: 5 5% C-UL, UL and VDE approved High input-output isolation voltage of 5Vrms Minimum BV CEO of 7V guaranteed Higher operating temperatures (versus HAXXX counterparts) Applications FOD84 Series AC line monitor Unknown polarity DC sensor Telephone line interface FOD67 and FOD87 Series Power supply regulators Digital logic inputs Microprocessor inputs Functional Block Diagram ANODE, CATHODE CATHODE, ANODE 2 FOD84 4 COLLECTOR 3 EMITTER ANODE CATHODE 2 Description May 26 The FOD84 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD67/87 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package. FOD67/87 4 COLLECTOR 3 EMITTER 4 tm 26 Fairchild Semiconductor Corporation
2 Absolute Maximum Ratings (T A = 25 C Unless otherwise specified.) Symbol TOTAL DEVICE Parameter Value FOD84 FOD67/87 Units T STG Storage Temperature -55 to +5 C T OPR Operating Temperature -55 to to + C T SOL Lead Solder Temperature 26 for sec C P TOT Total Power Dissipation 2 mw EMITTER I F Continuous Forward Current ±5 5 ma V R Reverse Voltage 6 P D Power Dissipation Derate above C 7.7 mw mw/ C DETECTOR V CEO Collector-Emitter Voltage 7 V V ECO Emitter-Collector Voltage 6 6 (FOD87) 7 (FOD67) V I C Continuous Collector Current 5 ma P C Collector Power Dissipation 5 mw Derate above 9 C 2.9 mw/ C 2
3 Electrical Characteristics (T A = 25 C Unless otherwise specified.) Individual Component Characteristics Symbol Parameter Device Test Conditions Min. Typ.* Max. Unit EMITTER V F Forward Voltage FOD84 I F = ±2mA.2.4 V FOD67 I F = 6mA FOD87 I F = 2mA.2.4 I R Reverse Leakage Current FOD67 V R = 6.V. µa FOD87 V R = 4.V C t Terminal Capacitance FOD84 V =, f = khz 5 25 pf FOD67 V =, f = khz 3 25 FOD87 V =, f = khz 3 25 DETECTOR I CEO Collector Dark Current FOD84 V CE = 2V, I F = na FOD67C/D V CE = V, I F = FOD67A/B V CE = V, I F = 5 FOD87 V CE = 2V, I F = BV CEO Collector-Emitter Breakdown FOD84 I C =.ma, I F = 7 V Voltage FOD67 I C = µa, I F = 7 FOD87 I C =.ma, I F = 7 BV ECO Emitter-Collector Breakdown FOD84 I E = µa, I F = 6 V Voltage FOD67 I E = µa, I F = 7 FOD87 I E = µa, I F = 6 Transfer Characteristics (T A = 25 C Unless otherwise specified.) Symbol DC Characteristic Device Test Conditions Min. Typ.* Max. Unit CTR V CE (sat) Current Transfer Ratio Collector-Emitter Saturation Voltage *Typical values at T A = 25 C FOD84 I F = ±ma, V CE = 5V () 2 3 % FOD84A 5 5 FOD67A I F = ma, V CE = 5V () 4 8 FOD67B FOD67C 2 FOD67D 6 32 FOD67A I F = ma, V CE = 5V () 3 FOD67B 22 FOD67C 34 FOD67D 56 FOD87 I F = 5mA, V CE = 5V () 5 6 FOD87A 8 6 FOD87B 3 26 FOD87C 2 4 FOD87D 3 6 FOD84 I F = ±2mA, I C = ma..2 V FOD67 I F = ma, I C = 2.5mA.4 FOD87 I F = 2mA, I C = ma
4 Transfer Characteristics (Continued) (T A = 25 C Unless otherwise specified.) Symbol AC Characteristic Device Test Conditions Min. Typ.* Max. Unit f C Cut-Off Frequency FOD84 V CE = 5V, I C = 2mA, R L = Ω, 5 8 khz -3dB t r Response Time (Rise) FOD84 V CE = 2 V, I C = 2mA, R L = Ω (2) 4 8 µs FOD67 FOD87 t f Response Time (Fall) FOD µs FOD67 FOD87 Isolation Characteristics Symbol Characteristic Device Test Conditions Min. Typ.* Max. Units V ISO Input-Output Isolation FOD84 f = 6Hz, t = min, 5 Vac(rms) Voltage (3) FOD67 FOD87 I I-O 2µA R ISO Isolation Resistance FOD84 V I-O = 5VDC 5x x Ω FOD67 FOD87 C ISO Isolation Capacitance FOD84 V I-O =, f = MHz.6. pf FOD67 FOD87 *Typical values at T A = 25 C Notes:. Current Transfer Ratio (CTR) = I C /I F x %. 2. For test circuit setup and waveforms, refer to page For this test, Pins and 2 are common, and Pins 3 and 4 are common. 4
5 Typical Electrical/Optical Characteristics (T A = 25 C Unless otherwise specified.) COLLECTOR POWER DISSIPATION PC (mw) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) FORWARD CURRENT IF (ma) Fig. Collector Power Dissipation vs. Ambient Temperature (FOD84) Fig. 3 Collector-Emitter Saturation Voltage vs. Forward Current Ic =.5mA m A 3m A 5m A 7m A Ta = 25 C FORWARD CURRENT I F (ma) 5. Fig. 5 Forward Current vs. Forward Voltage (FOD67/87) T A = o C 75 o C 5 o C 25 o C o C -3 o C -55 o C FORWARD VOLTAGE V F (V) COLLECTOR POWER DISSIPATION PC (mw) FORWARD CURRENT IF (ma) CURRENT TRANSFER RATIO CTR ( %) Fig. 2 Collector Power Dissipation vs. Ambient Temperature (FOD67/87) Fig. 4 Forward Current vs. Forward Voltage (FOD84) T A = 5 o C 75 o C 5 o C V = 5V Ta= 25 C FORWARD VOLTAGE V F (V) Fig. 6 Current Transfer Ratio vs. Forward Current FOD67/87 FOD84 25 o C o C -3 o C -55 o C FORWARD CURRENT I F (ma) 5
6 Typical Electrical/Optical Characteristics (Continued) (T A = 25 C Unless otherwise specified.) COLLECTOR CURRENT IC (ma) RELATIVE CURRENT TRANSFER RATIO (%) LED POWER DISSIPATION PLED (mw) Fig. 7 Collector Current vs. Collector-Emitter Voltage (FOD84) I F = 3mA 2 ma Fig. 9 Relative Current Transfer Ratio vs. Ambient Temperature FOD67/87 I F = 5mA V CE = 5V m A FOD84 I F = ma V CE = 5V 5m A Pc(MAX.) m A Ta= 25 C COLLECTOR-EMITTER VOLTAGE V CE (V) Fig. LED Power Dissipation vs. Ambient Temperature (FOD84) COLLECTOR-EMITTER SATURATION VOLTAGE V CE (sat) (V) LED POWER DISSIPATION PLED (mw) COLLECTOR CURRENT IC (ma) Fig. Collector-Emitter Saturation Voltage vs. Ambient Temperature.2 I = 2mA F I. C = ma I I F = 3mA Fig. 8 Collector Current vs. Collector-Emitter Voltage (FOD67/87) 5 2mA ma 5m A Ta = 25 C Pc(MAX.) COLLECTOR-EMITTER VOLTAGE V CE (V) Fig. 2 LED Power Dissipation vs. Ambient Temperature (FOD67/87)
7 Typical Electrical/Optical Characteristics (Continued) (T A = 25 C Unless otherwise specified.) RESPONSE TIME (µs) Test Circuit for Response Time Input R D Fig. 3 Response Time vs. Load Resistance V CE = 2V Ic= 2mA Ta= 25 C tr LOAD RESISTANCE R L (kω) td ts tf COLLECTOR DARK CURRENT I CEO (na) Vcc Input Output RL Output td. tr ts tf % 9% VOLTAGE GAIN A V (db) Fig. 5 Collector Dark Current vs. Ambient Temperature V CE = 2V Fig. 4 Frequency Response R L=k k FREQUENCY f (khz) Test Circuit for Frequency Response Vcc R D V CE = 2V Ic = 2mA Ta = 25 C RL Output 7
8 Package Dimensions (Through Hole) SEATING PLANE.5 (3.8). (2.8).3 (3.3).9 (2.3). (2.79).9 (2.29) SEATING PLANE.2 (5.).6 (4.).2 (5.).6 (4.).3 (3.3).9 (2.3).5 (3.8). (2.8).24 (.6).6 (.4).57 (4.).8 (3.).2 (.5) TYP.24 (.6).6 (.4).32 (7.92).288 (7.32).276 (7.).236 (6.).3 (7.62) typ Package Dimensions (.4 Lead Spacing).57 (4.).8 (3.). (2.79).9 (2.29).32 (7.92).288 (7.32).276 (7.).236 (6.). (2.8). (.8).42 (.66).38 (9.66) Note: All dimensions are in inches (millimeters).. (.26).29 (7.4).252 (6.4). (.26) Package Dimensions (Surface Mount) SEATING PLANE.5 (.3).43 (.).2 (5.).6 (4.).57 (4.).8 (3.).24 (.6).4 (.). (2.79).9 (2.29) Lead Coplanarity.4 (.) MAX.32 (7.92).288 (7.32).276 (7.).236 (6.).49 (.25).3 (.76).42 (.46).388 (9.86) Footprint Dimensions (Surface Mount) (.26) 8
9 Ordering Information Option Part Number Example Description S FOD84S Surface Mount Lead Bend SD FOD84SD Surface Mount; Tape and reel W FOD84W.4" Lead Spacing 3 FOD843 VDE Approved 3W FOD843W VDE Approved,.4" Lead Spacing 3S FOD843S VDE Approved, Surface Mount 3SD FOD843SD VDE Approved, Surface Mount, Tape & Reel Marking Information 3 V 4 X Definitions Fairchild logo 2 Device number 3 VDE mark (Note: Only appears on parts ordered with VDE option See order entry table) 4 One digit year code 5 Two digit work week ranging from to 53 6 Assembly package code 5 ZZ 84 Y
10 Carrier Tape Specifications Ø.55±.5 Note: All dimensions are in millimeters. Description Symbol Dimensions in mm (inches) Tape wide W 6 ±.3 (.63) Pitch of sprocket holes P 4 ±. (.5) Distance of compartment F P ±. (.295) 2 ±. (.79) Distance of compartment to compartment P 2 ±. (.472) Compartment A.45 ±. (.4) B 5.3 ±. (.29) K 4.25 ±. (.67) P 2 P A P.75±. F B W.3±.5 K
11 Lead Free Recommended IR Reflow Condition Temperature ( C) Profile Feature Pb-Sn solder assembly Lead Free assembly Preheat condition (Tsmin-Tsmax / ts) Tp Tsmax Tsmin 25 C C ~ 5 C 6 ~ 2 sec Melt soldering zone 83 C 6 ~ 2 sec Recommended Wave Soldering condition 5 C ~ 2 C 6 ~2 sec 27 C 3 ~ 9 sec Peak temperature (Tp) 24 +/-5 C 26 +/-5 C Ramp-down rate 6 C/sec max. 6 C/sec max. Profile Feature Peak temperature (Tp) ts (Preheat) Time (sec) For all solder assembly Max 26 C for sec Ramp-down Soldering zon
12 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx ActiveArray Bottomless Build it Now CoolFET CROSSVOLT DOME EcoSPARK E 2 CMOS EnSigna FACT FAST FASTr FPS FRFET GlobalOptoisolator GTO HiSeC I 2 C i-lo ImpliedDisconnect IntelliMAX FACT Quiet Series Across the board. Around the world. The Power Franchise Programmable Active Droop DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILDíS WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILDíS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms ISOPLANAR LittleFET MICROCOUPLER MicroFET MicroPak MICROWIRE MSX MSXPro OCX OCXPro OPTOLOGIC OPTOPLANAR PACMAN POP Power247 PowerEdge PowerSaver PowerTrench QFET QS QT Optoelectronics Quiet Series RapidConfigure RapidConnect µserdes ScalarPump SILENT SWITCHER SMART START SPM Stealth SuperFET SuperSOT -3 SuperSOT -6 SuperSOT -8 SyncFET TCM TinyLogic TINYOPTO TruTranslation UHC UniFET UltraFET VCX Wire 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I9 2
FOD816 Series 4-Pin Phototransistor Optocouplers
FOD86 Series 4-Pin Phototransistor Optocouplers Features AC input response Applicable to Pb-free IR reflow soldering Compact 4-pin package High current transfer ratio: 6% minimum Safety agency approvals
More informationH11AA814 Series, H11A617 Series, H11A817 Series 4-Pin Phototransistor Optocouplers
HAA84 Series, HA67 Series, HA87 Series 4-Pin Phototransistor Optocouplers Features AC input response (HAA84 only) Compatible to Pb-free IR reflow soldering Compact 4-pin dual in-line package Current transfer
More informationMOCD223-M Dual Channel Phototransistor Small Outline Surface Mount Optocouplers
MOCD223-M Dual Channel Phototransistor Small Outline Surface Mount Optocouplers Features U.L. Recognized (File #E90700, Volume 2) VDE Recognized (File #13616) (add option V for VDE approval, i.e, MOCD223V-M)
More information6-PIN PHOTOTRANSISTOR OPTOCOUPLERS
-PIN PHOTOTRANSISTOR CNX8A.W,, SL8.W & DESCRIPTION The CNX8A.W,, SL8.W AND, consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a -pin dual in-line package. PACKAGE
More informationMCT6, MCT61, MCT62 Dual Phototransistor Optocouplers
MCT6, MCT6, MCT62 Dual Phototransistor Optocouplers Features Two isolated channels per package Two packages fit into a 6 lead DIP socket Choice of three current transfer ratios Underwriters Laboratory
More informationGENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS
DESCRIPTION The device consists of a gallium arsenide infrared emitting diode optically coupled to a high voltage, silicon, phototransistor detector in a standard 6-pin DIP package. It is designed for
More informationGENERAL PURPOSE 6-PIN PHOTODARLINGTON OPTOCOUPLERS
DESCRIPTION The 4N29, 4N30, 4N3, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. 4N29 4N30 4N3 4N32 4N33 FEATURES High sensitivity to low input
More informationFOD814 Series, FOD617 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers
FOD84 Series, FOD67 Series, FOD87 Series 4-Pin High Operating Temperature Phototransistor Optocouplers Features AC input response (FOD84 only) Applicable to Pb-free IR reflow soldering Compact 4-pin package
More informationFOD814 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers
FOD84 Series, Series 4-Pin High Operating Temperature Phototransistor Optocouplers Features AC input response (FOD84 only) Applicable to Pb-free IR reflow soldering Compact 4-pin package Current transfer
More informationKSC2881 NPN Epitaxial Silicon Transistor
KSC288 NPN Epitaxial Silicon Transistor Power Amplifier Collector-Emitter Voltage : O =20V Current Gain Bandwidth Productor : f T =20MHz Collector Dissipation : P C =~2W in Mounted on Ceramic Board Complement
More informationFOD852 4-Pin High Operating Temperature Photodarlington Optocoupler
FOD852 4-Pin High Operating Temperature Photodarlington Optocoupler Features Applicable to Pb-free IR reflow soldering Compact 4-pin package High current transfer ratio: % minimum C-UL, UL, and VDE approved
More informationFODB100, FODB101, FODB102 Single Channel Microcoupler
FODB, FODB, FODB2 Single Channel Microcoupler Features Low profile package (.2mm maximum mounted height) Land pattern allows for optimum board space savings High Current Transfer Ratio (CTR) at low IF
More informationFJC1386 PNP Epitaxial Silicon Transistor FJC1386 PNP Epitaxial Silicon Transistor
FJC1386 PNP Epitaxial Silicon Transistor Low Saturation Transistor Medium Power Amplifier Complement to FJC2098 High Collector Current Low Collector-Emitter Saturation Voltage Marking 1 3 8 6 July 2005
More informationBAV23S Small Signal Diode
BAV2S Small Signal Diode 2 L0 September 2006 tm Connection Diagram 1 1 2 SOT-2 1 2 Absolute Maximum Ratings * T a = 25 C unless otherwise noted Symbol Parameter Value Unit V RRM Maximum Repetitive Reverse
More informationQEE213 Plastic Infrared Light Emitting Diode
QEE213 Plastic Infrared Light Emitting Diode Features Wavelength = 940 nm, GaAs Package Type: Sidelooker Medium Beam Angle, 50 Clear Plastic Package Matched Photosensors: QSE213 and QSE243 Package Dimensions
More informationMID400 AC Line Monitor Logic-Out Device
MID400 AC Line Monitor Logic-Out Device Features Direct operation from any line voltage with the use of an external resistor. Externally adjustable time delay Externally adjustable AC voltage sensing level
More informationKSB798 PNP Epitaxial Silicon Transistor
KSB798 PNP Epitaxial Silicon Transistor Audio Frequency Power Amplifier Collector Current : I C = -A Collector Power Dissipation : P C = 2W Marking 7 9 8 P Y W W July 2005 SOT-89. Base 2. Collector 3.
More informationMID400 AC Line Monitor Logic-Out Device
MID400 AC Line Monitor Logic-Out Device Features Direct operation from any line voltage with the use of an external resistor. Externally adjustable time delay Externally adjustable AC voltage sensing level
More informationDistributed by: www.jameco.com -8-8-4242 The content and copyrights of the attached material are the property of its owner. Connection Diagram 448 448SE SOT-2 2 5H MARKING MMBD448 5H MMBD448CA MMBD448CC
More informationFJN965 FJN965. NPN Epitaxial Silicon Transistor
For Output Amplifier of Electronic Flash Unit Low Collector-Emitter Saturation Voltage High Performance at Low Supply Voltage TO-92. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute
More informationMPSW01 NPN General Purpose Amplifier
MPSW01 NPN General Purpose Amplifier Features This device is designed for general purpose medium power amplifiers Sourced from process 37 Absolute Maximum Ratings * T a = 25 C unless otherwise noted *
More informationFDN359BN N-Channel Logic Level PowerTrench TM MOSFET
N-Channel Logic Level PowerTrench TM MOSFET January 26 General Description This N-Channel Logic Level MOSFET is produced using Fairchild s Semiconductor s advanced PowerTrench process that has been especially
More informationFJE3303 High Voltage Fast-Switching NPN Power Transistor
FJE3303 High oltage Fast-Switching NPN Power Transistor High oltage Capability High Switching Speed Suitable for Electronic Ballast and Switching Regulator TO-26. Emitter 2.Collector 3.Base Absolute Maximum
More informationFeatures. Symbol Description FGA25N120AN Units V CES Collector-Emitter Voltage 1200 V V GES Gate-Emitter Voltage ± 20 V Collector T
FGA25N2AN General Description Employing NPT technology, Fairchild s AN series of IGBTs provides low conduction and switching losses. The AN series offers an solution for application such as induction heating
More informationFDP75N08A 75V N-Channel MOSFET
FDP75N08A 75V N-Channel MOSFET Features 75A, 75V, R DS(on) = 0.011Ω @ = 10 V Low gate charge ( typical 145nC) Low Crss ( typical 86pF) Fast switching Improved dv/dt capability Description July 2006 UniFET
More informationDistributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. LM741 Single Operational Amplifier Features Short Circuit Protection Excellent
More informationKSP13/14. V CE =5V, I C =10mA
KSP3/4 KSP3/4 Darlington Transistor Collector-Emitter Voltage: V CES =30V Collector Power Dissipation: P C (max)=625mw TO-92. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Darlington Transistor Absolute
More informationKSA1013 KSA1013 PNP EPITAXIAL SILICON TRANSISTOR. Color TV Audio Output Color TV Vertical Deflection Output
KSA03 KSA03 Color TV Audio Output Color TV Vertical Deflection Output TO-92L. Emitter 2. Collector 3. Base PNP EPITAXIAL SILICON TRANSISTOR Absolute Maximum Ratings T a =25 C unless otherwise noted Symbol
More informationDescription. TO-220 FCP Series. Symbol Parameter FDP61N20 Unit. Maximum Lead Temperature for Soldering Purpose, 300 C 1/8 from Case for 5 Seconds
FDP61N20 200V N-Channel MOSFET Features 61A, 200V, R DS(on) = 0.041Ω @ = 10 V Low gate charge ( typical 58 nc) Low C rss ( typical 80 pf) Fast switching 100% avalanche tested Improved dv/dt capability
More informationFJP5027 FJP5027. NPN Silicon Transistor. High Voltage and High Reliability High Speed Switching Wide SOA
High Voltage and High Reliability High Speed Switching Wide SOA TO-220.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings =25 C unless otherwise noted Symbol Parameter Value Units
More informationNC7WZ17 TinyLogic UHS Dual Buffer with Schmitt Trigger Inputs
April 2006 NC7WZ17 TinyLogic UHS Dual Buffer with Schmitt Trigger Inputs General Description The NC7WZ17 is a dual buffer with Schmitt trigger inputs from Fairchild s Ultra High Speed Series of TinyLogic
More informationKSH112 KSH112. NPN Silicon Darlington Transistor
D-PAK for Surface Mount Applications High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, - I Suffix) Electrically Similar to
More informationKSC1845. h FE2 V CE =6V, I C =1mA. Classification P F E U h FE2 200 ~ ~ ~ ~ 1200
KSC845 KSC845 Audio Frequency Low Noise Amplifier Complement to KSA992 TO-92. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T a =25 C unless otherwise noted Symbol
More informationHCPL-0700, HCPL-0701, HCPL-0730, HCPL-0731 Low Input Current High Gain Split Darlington Optocouplers
HCPL-0700, HCPL-070, HCPL-070, HCPL-07 Low Input Current High Gain Split Darlington Optocouplers Single Channel:HCPL-0700, HCPL-070 Dual Channel:HCPL-070, HCPL-07 Features Low input current 0.5 ma Superior
More informationFeatures. 13 A, 30 V. R DS(ON) = 11.3 V GS = 10 V R DS(ON) = 14.4 V GS = 4.5 V. RoHS Compliant. Symbol Parameter Ratings Units
3V N-Channel Fast Switching PowerTrench MOSFET February 27 tm General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either
More informationFFA30UP20DN Ultrafast Recovery Power Rectifier
FFA3UP2DN Ultrafast Recovery Power Rectifier Features Ultrafast with Soft Recovery : < 45 (@I F = 5A) High Reverse Voltage : V RRM = 2V Avalanche Energy Rated Planar Cotruction Applicatio Output Rectifiers
More informationFQA8N100C 1000V N-Channel MOSFET
FQA8N100C 1000V N-Channel MOSFET Features 8A, 1000V, R DS(on) = 1.45Ω @ = 10 V Low gate charge (typical 53 nc) Low C rss (typical 16 pf) Fast switching 100% avalanche tested Improved dv/dt capability Description
More informationDescription. TO-3P FDA Series. Symbol Parameter FDA70N20 Unit. Maximum Lead Temperature for Soldering Purpose, 300 C 1/8 from Case for 5 Seconds
FDA70N20 200V N-Channel MOSFET Features 70A, 200V, R DS(on) = 0.035Ω @ = 10 V Low gate charge ( typical 66 nc) Low C rss ( typical 89 pf) Fast switching 100% avalanche tested Improved dv/dt capability
More informationDescription. Symbol Parameter FDAF69N25 Unit. (Note 2) Maximum Lead Temperature for Soldering Purpose, 300 C 1/8 from Case for 5 Seconds
FDAF69N25 250V N-Channel MOSFET Features 34A, 250V, R DS(on) = 0.041Ω @ = 10 V Low gate charge ( typical 77 nc) Low Crss ( typical 84 pf) Fast switching Improved dv/dt capability Description September
More informationRHRP A, 600V Hyperfast Diodes
RHRP3060 30A, 600V Hyperfast Diodes Features Hyperfast with Soft Recovery...
More informationFDMS8690 N-Channel PowerTrench MOSFET
FDMS869 N-Channel PowerTrench MOSFET 3V, 9.8A, 9mΩ General Description This device has been designed specifically to improve the efficiency of DC-DC converters. Using new techniques in MOSFET construction,
More informationFFPF20UP20DP Ultrafast Recovery Power Rectifier
FFPF20UP20DP Ultrafast Recovery Power Rectifier Features Ultrafast with Soft Recovery : < 45 (@I F = A) High Reverse Voltage : V RRM = 200V Enhanced Avalanche Energy Rated Planar Cotruction Applicatio
More informationKSP10 KSP10. NPN Epitaxial Silicon Transistor. VHF/UHF transistor. Absolute Maximum Ratings T a =25 C unless otherwise noted
KSP KSP VHF/UHF transistor NPN Epitaxial Silicon Transistor TO-9. Base. Emitter. Collector Absolute Maximum Ratings T a =5 C unless otherwise noted Symbol Parameter Value Units V CBO Collector-Base Voltage
More information2N5551- MMBT5551 NPN General Purpose Amplifier
2N5551- MMBT5551 NPN General Purpose Amplifier Features This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Suffix -C means Center Collector in 2N5551
More informationFQPF12N60CT 600V N-Channel MOSFET
FQPF12N60CT 600V N-Channel MOSFET Features 12A, 600V, R DS(on) = 0.65Ω @ = 10 V Low gate charge ( typical 48 nc) Low Crss ( typical 21 pf) Fast switching 100% avalanche tested Improved dv/dt capability
More informationFeatures. TA=25 o C unless otherwise noted
Dual N-Channel.V Specified PowerTrench MOSFET July 3 General Description These N-Channel.V specified MOSFETs use Fairchild Semiconductor s advanced PowerTrench process. It has been optimized for power
More informationFDD V P-Channel PowerTrench MOSFET 40V, 32A, 27mΩ Features
FDD4685 V P-Channel PowerTrench MOSFET V, 3A, 7mΩ Features Max r DS(on) = 7mΩ at V GS = V, I D = 8.4A Max r DS(on) = 35mΩ at V GS = 4.5V, I D = 7A High performance trench technology for extremely low r
More informationFeatures. Symbol Description FGA25N120AND Units V CES Collector-Emitter Voltage 1200 V V GES Gate-Emitter Voltage ± 20 V Collector T
FGA25N2AND General Description Employing NPT technology, Fairchild s AND series of IGBTs provides low conduction and switching losses. The AND series offers an solution for application such as induction
More informationFFA60UP30DN Ultrafast Recovery Power Rectifier
FFA60UP30DN Ultrafast Recovery Power Rectifier Features Ultrafast with Soft Recovery : < 55 High Reverse Voltage : V RRM = 300V Avalanche Energy Rated Planar Cotruction Applicatio General purpose Switching
More informationFeatures. = 25 C unless otherwise noted
Dual N & P-Channel PowerTrench MOSFET October 4 General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor s advanced PowerTrench
More informationFQA11N90 900V N-Channel MOSFET
FQA11N90 900V N-Channel MOSFET Features 11.4A, 900V, R DS(on) = 0.96Ω @ = 10 V Low gate charge ( typical 72 nc) Low Crss ( typical 30pF) Fast switching 100% avalanche tested Improved dv/dt capability Description
More informationFDD8778/FDU8778 N-Channel PowerTrench MOSFET 25V, 35A, 14mΩ Features
E N FDD8778/FDU8778 N-Channel PowerTrench MOSFET 25V, 35A, 4mΩ Features Max r DS(on) = 4.mΩ at V GS = V, I D = 35A Max r DS(on) = 2.mΩ at V GS = 4.5V, I D = 33A Low gate charge: Q g(tot) = 2.6nC(Typ),
More informationFeatures. 175 C maximum junction temperature rating. T A =25 o C unless otherwise noted
FDB62P 2V P-Channel.8V Specified PowerTrench MOSFET January 24 FDB62P General Description This P-Channel power MOSFET uses Fairchild s low voltage PowerTrench process. It has been optimized for power management
More informationFDB V N-Channel PowerTrench MOSFET
FDB264 200V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored to minimize
More informationFDB5800 N-Channel Logic Level PowerTrench MOSFET
FDB58 N-Channel Logic Level PowerTrench MOSFET 6V, 8A, 7mΩ Features r DS(ON) = 5.5mΩ (Typ.), V GS = 5V, I D = 8A High performance trench technology for extermely low Rdson Low Gate Charge High power and
More informationFeatures. TO-220F IRFS Series
500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar, DMOS technology. This advanced technology has
More informationN-Channel Logic Level Enhancement Mode Field Effect Transistor. Features. TA=25 o C unless otherwise noted
September BSS38 BSS38 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild s proprietary,
More informationRFP12N10L. Features. 12A, 100V, Ohm, Logic Level, N-Channel Power MOSFET. Ordering Information. Symbol. Packaging. Data Sheet April 2005
RFP12N1L Data Sheet April 25 12A, 1V,.2 Ohm, Logic Level, N-Channel Power MOSFET These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic
More informationISL9V2540S3S EcoSPARK TM N-Channel Ignition IGBT 250mJ, 400V Features
ISL9V24S3S EcoSPARK TM N-Channel Ignition IGBT 2mJ, 4V Features! SCIS Energy = 2mJ at T J = 2 o C! Logic Level Gate Drive Applications! Automotive Ignition Coil Driver Circuits! Coil - On Plug Applications
More informationFDD8782/FDU8782 N-Channel PowerTrench MOSFET 25V, 35A, 11mΩ General Description
E N FDD878/FDU878 N-Channel PowerTrench MOSFET 5V, 35A, mω General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous
More informationNDS0605 P-Channel Enhancement Mode Field Effect Transistor
NDS65 P-Channel Enhancement Mode Field Effect Transistor July NDS65 General Description These P-Channel enhancement mode field effect transistors are produced using Fairchild s proprietary, high cell density,
More informationFDP V, 80A, 2.7mΩ. N-Channel PowerTrench MOSFET. FDP8441 N-Channel PowerTrench MOSFET. Applications. Features.
M E N FDP844 N-Channel PowerTrench MOSFET 4V, 8A, 2.7mΩ Features Typ r DS(on) = 2.mΩ at V GS = V, I D = 8A Typ Q g() = 25nC at V GS = V Low Miller Charge Low Q rr Body Diode UIS Capability (Single Pulse
More informationFDP3651U N-Channel PowerTrench MOSFET 100V, 80A, 15mΩ Features
FDP365U N-Channel PowerTrench MOSFET V, 8A, 5mΩ Features r DS(on) =3 mω(typ.), V GS = V, I D = 4A Q g(tot) =49 nc(typ.), V GS = V Low Miller Charge Low Q rr Body Diode UIS Capability (Single Pulse/Repetitive
More informationFeatures. TA=25 o C unless otherwise noted
FDS667A Single N-Channel, Logic Level, PowerTrench MOSFET June 23 FDS667A General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process
More informationFDP79N15 / FDPF79N15 150V N-Channel MOSFET
FDP79N15 / FDPF79N15 150V N-Channel MOSFET Features 79A, 150V, R DS(on) = 0.03Ω @V GS = 10 V Low gate charge ( typical 56 nc) Low Crss ( typical 96pF) Fast switching Improved dv/dt capability Description
More informationKSP42/43. Symbol Parameter Value Units V CBO V V V CEO
High oltage Transistor Collector-Emitter oltage: CEO =KSP42: KSP43: Collector Power Dissipation: P C (max)=625mw NPN Epitaxial Silicon Transistor TO-92. Emitter 2. Base 3. Collector Absolute Maximum Ratings
More informationFDD8780/FDU8780 N-Channel PowerTrench MOSFET 25V, 35A, 8.5mΩ General Description
E N FDD878/FDU878 N-Channel PowerTrench MOSFET 5V, 35A, 8.5mΩ General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either
More informationFGPF7N60RUFD 600V, 7A RUF IGBT CO-PAK
FGPF7N6RUFD 6V, 7A RUF IGBO-PAK Features High speed switching Low saturation voltage : V CE(sat) =.95 V @ High input impedance CO-PAK, IGBT with FRD : t rr = 5 ns (typ.) Short Circuit rated, us @ = C,
More informationQFET FQE10N20LC. Features. TO-126 FQE Series
200V Logic N-Channel MOSFET QFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced
More informationFDB8447L 40V N-Channel PowerTrench MOSFET 40V, 50A, 8.5mΩ Features
FDB8447L V N-Channel PowerTrench MOSFET V, 5A, 8.5mΩ Features Max r DS(on) = 8.5mΩ at, I D = 4A Max r DS(on) = mω at V GS = 4.5V, I D = A Fast Switching RoHS Compliant D General Description February 7
More informationFJA4310. Symbol Parameter Value Units
FJA43 FJA43 Audio Power Amplifier High Current Capability : =A High Power Dissipation Wide S.O.A Complement to FJA42 TO-3P.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings
More informationMOCD213M Dual Channel Phototransistor Small Outline Surface Mount Optocouplers
MOCD23M Dual Channel Phototransistor Small Outline Surface Mount Optocouplers Features U.L. recognized (File #E90700, Volume 2) VDE recognized (File #3666) (add option V for VDE approval, i.e, MOCD23VM)
More informationFDP V, 80A, 3.1mΩ. N-Channel PowerTrench MOSFET. FDP8442 N-Channel PowerTrench MOSFET. Features. Applications. June 2007
M E N FDP8442 N-Channel PowerTrench MOSFET 4V, 8A, 3.mΩ Features Applications June 27 Typ r DS(on) = 2.3mΩ at V GS = V, I D = 8A Automotive Engine Control Typ Q g() = 8nC at V GS = V Powertrain Management
More informationFQP10N60C / FQPF10N60C 600V N-Channel MOSFET
FQP10N60C / FQPF10N60C 600V N-Channel MOSFET Features 9.5A, 600V, R DS(on) = 0.73Ω @ = 10 V Low gate charge ( typical 44 nc) Low Crss ( typical 18 pf) Fast switching 100% avalanche tested Improved dv/dt
More informationSOT-23 MARK: U92. Absolute Maximum Ratings *T a = 25 C unless otherwise noted Symbol Parameter Value Units
BSR17A NPN General Purpose Amplifier C B E June 2007 NPN General Purpose Amplifier SOT-23 MARK: U92 Features This device is designed as a general purpose amplifier and switch. The useful dynamic range
More informationFJN13003 FJN NPN Silicon Transistor Planar Silicon Transistor
FJN3003 FJN3003 High Voltage Switch Mode Application High Speed Switching Suitable for Electronic Ballast up to 2W NPN Silicon Transistor Planar Silicon Transistor Absolute Maximum Ratings T C =25 C unless
More information74VHC4316 Quad Analog Switch with Level Translator
74VHC4316 Quad Analog Switch with Level Translator Features Typical switch enable time: 20ns Wide analog input voltage range: ±6V Low ON resistance: 50 Typ. (V CC V EE = 4.5V) 30 Typ. (V CC V EE = 9V)
More informationFAN7547A LCD Backlight Inverter Drive IC
FAN7547A LCD Backlight Inverter Drive IC Features Backlight Lamp Ballast and Soft Dimming Reduced Number of Components Wide Range of Operating Voltage (6 to 30V) Precision Voltage Reference Reduced to
More informationISL9R860P2, ISL9R860S2, ISL9R860S3ST
ISL9RP, ISL9RS, ISL9RS3ST A, V Stealth Diode General Description The ISL9RP, ISL9RS and ISL9RS3S are Stealth diodes optimized for low loss performance in high frequency hard switched applications. The
More informationFeatures. Max r DS(on) = 50 V GS = -10 V, I D = -4A. Max r DS(on) = 75 V GS = -4.5 V, I D = -3.4A. RoHS Compliant
FC58AP Single P-Channel Logic Level PowerTrench MOSFET -3V, -A, 5mΩ General escription This P-Channel Logic Level MOSFET is produced using Fairchild's advanced PowerTrench process. It has been optimized
More informationFeatures I-PAK (TO-251AA) TA=25 o C unless otherwise noted
FDD73BL/FDU73BL 3V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or
More informationFJL6820. Symbol Parameter Typ Max Units R θjc Thermal Resistance, Junction to Case C/W
High Voltage Color Display Horizontal Deflection Output High Collector-Base Breakdown Voltage : BV CBO = 5V Low Saturation Voltage : (sat) = 3V (Max.) For Color Monitor NPN Triple Diffused Planar Silicon
More informationUniFET TM. FDP18N50 / FDPF18N50 500V N-Channel MOSFET. FDP18N50 / FDPF18N50 500V N-Channel MOSFET. Description. Features. Absolute Maximum Ratings
FDP18N50 / FDPF18N50 500V N-Channel MOSFET Features 18A, 500V, R DS(on) = 0.265Ω @V GS = 10 V Low gate charge ( typical 45 nc) Low C rss ( typical 25 pf) Fast switching 100% avalanche tested Improved dv/dt
More informationQ1 D1 D2 Q P D (Note 1b) Power Dissipation for Single Operation (Note 1a)
FDG8850NZ Dual N-Channel PowerTrench MOSFET 30V,0.75A,0.4Ω Features Max r DS(on) = 0.4Ω at V GS = 4.5V, I D = 0.75A Max r DS(on) = 0.5Ω at V GS = 2.7V, I D = 7A Very low level gate drive requirements allowing
More informationQFET FQP9N25C/FQPF9N25C
250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology
More informationFEATURES BV DSS. Characteristic Value Units Drain-to-Source Voltage. 115 Continuous Drain Current (T C =100 )
NChannel Small Signal MOSFET 2N7002MTF FEATURES B DSS = 60! Lower R DS(on)! Improved Inductive Ruggedness! Fast Switching Times! Lower Input Capacitance! Extended Safe Operating Area! Improved High Temperature
More informationQFET FQA36P15. Features
150V P-Channel MOSFET QFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced
More informationFQA11N90C FQA11N90C. 900V N-Channel MOSFET. Absolute Maximum Ratings T C = 25 C unless otherwise noted. Thermal Characteristics.
900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology
More informationApplication TOP. Symbol Parameter Ratings Units V DS Drain to Source Voltage 20 V V GS Gate to Source Voltage ±12 V Drain Current -Continuous T
FDZ93P P-Channel.5V Specified PowerTrench BGA MOSFET V,.6A, 6mΩ Features Max r DS(on) = 6mΩ at V GS =.5V, I D =.6A Max r DS(on) = 7mΩ at V GS =.5V, I D = 3.6A Occupies only.5 mm of PCB area. Less than
More informationISL9R3060G2, ISL9R3060P2
ISL9R36G2, ISL9R36P2 3A, 6V Stealth Diode General Description The ISL9R36G2 and ISL9R36P2 are Stealth diodes optimized for low loss performance in high frequency hard switched applications. The Stealth
More informationELECTRICAL CHARACTERISTICS (25 Degrees C Ambient Temperature unless otherwise stated)
FLLD261 HIGH CONDUCTANCE LOW LEAKAGE DIODE PD....50 mw @ TA = 25 Deg C BV....200 V (MIN) @ IR = 5 ua ABSOLUTE MAXIMUM RATINGS (NOTE 1) TEMPERATURES Storage Temperature Operating Junction Temperature -55
More informationJ108/J109/J110/MMBFJ108
N-Channel Switch This device is designed for digital switching applications where very low on resistance is mandatory. Sourced from Process 8. J8/J9/J/MMBFJ8 TO-92. Drain 2. Source 3. Gate 3 2 SuperSOT-3
More informationQFET TM FQP17P10. Features. TO-220 FQP Series
100V P-Channel MOSFET QFET TM General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced
More informationFeatures. TO-220F SSS Series
600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar, DMOS technology. This advanced technology has
More informationFQP3N80C/FQPF3N80C 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are
800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology
More informationFJAF6810. h FE2 V CE =5V, I C =6A. Symbol Parameter Typ Max Units R θjc Thermal Resistance, Junction to Case 2.08 C/W
FJAF68 FJAF68 High Voltage Color Display Horizontal Deflection Output High Collector-Base Breakdown Voltage : BV CBO = 5V High Switching Speed : (typ.) =.µs For Color Monitor TO-3PF.Base 2.Collector 3.Emitter
More informationQFET TM FQP13N50C/FQPF13N50C
500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology
More information74F161A, 74F163A Synchronous Presettable Binary Counter
74F161A, 74F163A Synchronous Presettable Binary Counter Features Synchronous counting and loading High-speed synchronous expansion Typical count frequency of 120MHz Ordering Information Order Number Package
More informationKSA539 KSA539. PNP Epitaxial Silicon Transistor
Low Frequency Amplifier Complement to KSC815 Collector-Base Voltage: V CBO = -60V Collector Power Dissipation: P C = 400mW Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base) 1 TO-92 1.
More information74F191 Up/Down Binary Counter with Preset and Ripple Clock
74F191 Up/Down Binary Counter with Preset and Ripple Clock Features High-Speed 125MHz typical count frequency Synchronous counting Asynchronous parallel load Cascadable Ordering Information Order Number
More information