Q825 8-PIN DIP PHOTOTRANSISTOR OPTOCOUPLER Feature: UL recognized (File # E338132) Creepage distance > 7.62mm

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Alvin Nash
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62mm VDE recognized (file # 40030457) Current transfer ratio (CTR: 600~7500% at I F =1mA, V CE =2V) Operating Temperature up to 100 ºC Available

1 Feature: Certification & Compliance: High Isolation voltage between input and output Pb free and RoHS Compliant (Viso = 5000V rms) UL recognized (File # E338132) Creepage distance > 7.62mm VDE recognized (file # ) Current transfer ratio (CTR: 600~7500% at I F =1mA, V CE =2V) Operating Temperature up to 100 ºC Available in Tube or Tape and reel Available with standard DIP-8, Wide lead bend, and SMD lead bend options. Conventional black housing package Schematic: Dimension: (Dot location indicates pin 1) 8-Pin Dip (standard): Product: Q825 Date: February 1, 2011 Page 1 of 10

2 Wide lead bend (Option W): SMD lead bend (Option S): - All Dimensions are in mm - Tolerance = +/- 0.1mm Product: Q825 Date: February 1, 2011 Page 2 of 10

3 Absolute Maximum Rating Symbol Parameter Rating Units T STG Storage Temperature -55 to +150 ºC T OPR Operating Temperature -55 to +100 ºC T SOL Lead Solder Temperature 260 for 10 sec ºC P TOT Total Power Dissipation 200 mw EMITTER I F Continuous Forward Current 60 ma I FP Peak Forward Current (1us, pulse) 1 A V R Reverse Voltage 6 V P D Power Dissipation 100 mw Power Dissipation Derated above 100ºC - mw/ ºC DETECTOR V CEO Collector Emitter Voltage 40 V V ECO Emitter-Collector Voltage 7 V I C Continuous Collector Current 80 ma P C Collector Power Dissipation 150 mw Collector Power Dissipation Derated above 100ºC 5.8 mw/ºc Product: Q825 Date: February 1, 2011 Page 3 of 10

4 Electrical Characteristic (T A =25 o C) Symbol Characteristic Device Test Condition Range Unit Emitter Min Typ Max V F Forward Voltage I f = 20mA V I R Reverse Current Q825 V R = 4V µa C in Input Capacitance V = 0, f = 1kHz pf Detector Min Typ Max I CEO BV CEO BV ECO Collector-Emitter Dark Current Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Q825 V CE = 10V, I F = 0 ma I C = 0.1mA I E = 0.01mA µa V V DC Transfer Characteristic Min Typ Max CTR V CE(SAT) Current Transfer Ratio Collector-Emitter Saturation Voltage Isolation Characteristic V ISO Q825 V CE = 2V, I F = 1mA % I C = 5mA, I F = V mA Isolation Voltage Vrms R IO Isolation Resistance Q825 V IO = 500Vdc, 40~60% R.H. 5x Ω C IO Floating Capacitance V IO = 0, f = 1MHz pf AC Characteristic Min Typ Max f c Cut-Off Frequency V CE = 5V, I C = 2mA, Q825 R L = 100 Ω, -3dB t r Rise Time V CE = 2V, t f Fall Time I C = 10mA, R L = 100 Ω khz µs µs Product: Q825 Date: February 1, 2011 Page 4 of 10

5 Characteristic Curves: Q825 8-PIN DIP PHOTOTRANSISTOR Product: Q825 Date: February 1, 2011 Page 5 of 10

6 Test Circuit for Response Time Product: Q825 Date: February 1, 2011 Page 6 of 10

7 Solder Profile & Footprint: Recommended Solder Footprint for SMD Leadform Units: mm tolerance: +/- 0.1mm Product: Q825 Date: February 1, 2011 Page 7 of 10

8 Packing & Labeling: Tape Dimensions: Product: Q825 Date: February 1, 2011 Page 8 of 10

9 Device Marking: Q = QT-Brightek Corporation Q825 = Device Part Number Y = Year WW = Week V = VDE Option Ordering Information: Part Number Q825 Orderable Part Number Options Description Quantity per packing Q825 None Standard 8pin DIP 50pcs / Tube Q825V None With VDE marking 50pcs / Tube Q825W W Wide lead bend (0.4 inch spacing) 50pcs / Tube Q825WV Q825STA Q825STAV W S S Wide lead bend (0.4 inch spacing) + VDE marking SMD lead form with tape and reel option SMD lead form with tape and reel option + VDE marking 50pcs / Tube 900pcs / reel 900pcs / reel Product: Q825 Date: February 1, 2011 Page 9 of 10

10 Revision History: Description: Revision # Revision Date Initial release of Q /23/2010 Feature, certification & compliance and ordering information updates /01/2011 Disclaimer QT-BRIGHTEK reserves the right to make changes without further notice to any products herein to improve reliability, function or design. QT-BRIGHTEK does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. Life Support Policy QT-BRIGHTEK s products are not authorized for use as critical components in life support devices or systems without the express written approval of QT-BRIGHTEK. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Product: Q825 Date: February 1, 2011 Page 10 of 10

Product: Q814 Date: February 1, 2011 Page 1 of 13 Version# 1.2

Product: Q814 Date: February 1, 2011 Page 1 of 13 Version# 1.2 Feature: High Isolation voltage between input and output (Viso = 5000V rms) Current transfer ration (CTR: Min. 20% at I F = ±1mA, V ce =5V) High collector-emitter voltage V CEO =80V Operating Temperature