FOD819 Series. FOD819 4-Pin DIP High Speed Phototransistor Optocouplers
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1 FOD89 4-Pin DIP High Speed Phototransistor Optocouplers Description The FOD89 consists of a gallium arsenide (GaAs) infra red emitting diode, driving a high speed photo detector with integrated base to emitter resistor, R BE, in a 4 pin dual in line package. It is designed to be an improved replacement to the popular FOD87 Series when higher speed performance is required in isolated data signal transmission. Features High Speed Performance ~ 3 khz Current Transfer Ratio: % to 6% Minimum BV CEO of 8 V Guaranteed Safety and Regulatory Approvals: UL577, 5, VAC RMS for Minute DIN EN/IEC , 85 V Peak Working Insulation Voltage Typical Applications Digital Logic Inputs Microprocessor Inputs Power Supply Monitor Twisted Pair Line Receiver Telephone Line Receiver DIP 4 PINS MARKING DIAGRAM ON ON = Company Logo 89 = Device Number V = DIN EN/IEC Option X = One Digit Year Code ZZ = Digit Work Week Y = Assembly Package Code PIN CONNECTIONS ORDERING INFORMATION See detailed ordering and shipping information on page 7 of this data sheet. Semiconductor Components Industries, LLC, 27 April, 28 Rev. Publication Order Number: FOD89/D
2 Safety and Insulation Ratings As per DIN EN/IEC , this optocoupler is suitable for safe electrical insulation only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Table. SAFETY AND INSULATION RATINGS Parameter Characteristics Installation Classifications per DIN VDE < 5 V RMS I IV /.89 Table, For Rated Mains Voltage < 3 V RMS I III Climatic Classification 55/5/2 Pollution Degree (DIN VDE /.89) 2 Comparative Tracking Index 75 Table 2. Symbol Parameter Value Unit VPR Input to Output Test Voltage, Method A, V IORM x.6 = V PR, Type and Sample Test with t m = s, Partial Discharge < 5 pc Input to Output Test Voltage, Method B, V IORM x.875 = V PR, % Production Test with t m = s, Partial Discharge < 5 pc 36 Vpeak 36 Vpeak VIORM Maximum Working Insulation Voltage 85 Vpeak VIOTM Highest Allowable Over Voltage 8 Vpeak External Creepage 7 mm External Clearance 7 mm External Clearance (for Option W,.4 Lead Spacing) mm DTI Distance Through Insulation (Insulation Thickness).4 mm T S Case Temperature (Note ) 75 C IS,INPUT Input Current (Note ) 4 ma PS,OUTPUT Output Power (Note ) 7 mw RIO Insulation Resistance at T S, V IO = 5 V (Note ) > Ω. Safety limit values maximum values allowed in the event of a failure. Table 3. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit TOTAL PACKAGE T STG Storage Temperature 55 to +25 C T OPR Operating Temperature 55 to + C T J Junction Temperature 55 to +25 C T SOL Lead Solder Temperature 26 for seconds C θ JC Junction to Case Thermal Resistance 2 C/W P TOT Total Device Power Dissipation 2 mw EMITTER Continuous Forward Current 5 ma V R Reverse Voltage 6 V P Power Dissipation 7 mw D Derate Above C.7 mw/ C 2
3 Table 3. ABSOLUTE MAXIMUM RATINGS (continued) Symbol Parameter Value Unit DETECTOR V CEO Collector Emitter Voltage 8 V V ECO Emitter Collector Voltage 2 V I C Continuous Collector Current 3 ma P Collector Power Dissipation 5 mw C Derate Above 9 C 2.9 mw/ C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Electrical Characteristics Table 4. INDIVIDUAL COMPONENT CHARACTERISTICS ( = 25 C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit EMITTER V F Forward Voltage =.5 ma.2.4 V I R Reverse Current V R = 4. V μa C t Terminal Capacitance V =, f = khz 3 pf DETECTOR I CEO Collector Dark Current V CE = 4 V, = na BV CEO Collector Emitter Breakdown Voltage I C =. ma, = 8 5 V BV ECO Emitter Collector Breakdown Voltage I E =. ma, = 2 7 V DC TRANSFER CHARACTERISTICS CTR Current Transfer Ratio (Note 2) =.5 ma, V CE 6 % V CE(SAT) Saturation Voltage =.5 ma, I C =.2 ma.3 V I C(OFF) OFF state collector current V F =.7 V, V CE = 4 V μa AC TRANSFER CHARACTERISTICS t R Rise Time (Saturated) =.5 ma,, R L = kω 2 μs t F Fall Time (Saturated) (Note 3) 2 μs t PHL Propagation Delay Time High to Low =.5 ma,, R L = kω 9 3 μs t PLH Propagation Delay Time Low to High (Note 3) 8 3 μs 2. Current Transfer Ratio (CTR) = I C / x %. 3. Refer to test circuit setup. Table 5. ISOLATION CHARACTERISTICS ( = 25 C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit V ISO Input Output Isolation Voltage (Note 4) f = 6 Hz, t = minutes, I I O 2 μa 5 VAC RMS R ISO Isolation Resistance V I O = 5 V DC x Ω C ISO Isolation Capacitance V I O =, f = MHz.6. pf 4. For this test, Pins and 2 are common, and Pins 3 and 4 are common. 3
4 Typical Performance Curves P LED LED POWER DISSIPATION (mw) P C COLLECTOR POWER DISSIPATION (mw) Figure. LED Power Dissipation Figure 2. Collector Power Dissipation FORWARD CURRENT (ma) = C 75 C 5 C 25 C C -3 C -4 C -55 C V CE COLLECTOR EMITTER VOLTAGE (V) I C =.5 ma ma 3 ma 5 ma 7 ma = 25 C V F FORWARD VOLTAGE (V) FORWARD CURRENT (ma) Figure 3. Forward Current vs. Forward Voltage Figure 4. Collector-Emitter Voltage vs. Forward Current CTR CURRENT TRANSFER RATION (%) V CE = 25 C RELATIVE CURRENT TRANSFER RATIO (%) V CE =.5 ma FORWARD CURRENT (ma) Figure 5. Current Transfer Ratio vs. Forward Current Figure 6. Relative Current Transfer Ratio 4
5 I C COLLECTOR CURRENT (ma) P C (MAX) = 25 C = 3 ma 2 ma ma 5 ma.5 ma V CE(SAT) COLLECTOR EMITTER SATURATION VOLTAGE (V) = 8 ma, I C = 2.4 ma =.5 ma, I C =.2 ma V CE COLLECTOR EMITTER VOLTAGE (V) Figure 7. Collector Current vs. Collector-Emitter Voltage Figure 8. Collector-Emitter Saturation Voltage I CEO COLLECTOR DARK CURRENT (na).. V CE = 4 V t P - PROPAGATION DELAY TIME (μs) =.5 ma R L = kω Frequency = khz t PHL t PLH Figure 9. Collector Dark Current Figure. Propagation Delay t R / t F - SATURATED RISE/FALL TIME (μs) =.5 ma R L = kω Frequency = khz t R t F t P - PROPAGATION DELAY TIME (μs) = 2 ma R L = kω Frequency = khz t PLH t PHL Figure. Saturated Rise / Fall Time Figure 2. Propagation Delay 5
6 t R / t F - SATURATED RISE/FALL TIME (μs) = 2 ma R L = kω Frequency = khz t F t R t P - PROPAGATION DELAY TIME (μs) =.5 ma = 25 C Frequency = KHz t PLH t PHL R L - LOAD RESISTANCE (k ) Figure 3. Collector Dark Current Figure 4. Propagation Delay Test Circuit PW = ms Duty Cycle = 5% 4 R L V O t R t F Monitor R M 2 3 V O 2V 9% % t PHL t PLH Figure 5. Test Circuit for Response Time Figure 6. Timing Diagram 6
7 Reflow Profile Figure 7. Reflow Profile Table 6. Profile Freature Pb Free Assembly Profile Temperature Min. (Tsmin) 5 C Temperature Max. (Tsmax) 2 C Time (t S ) from (Tsmin to Tsmax) 6 2 seconds Ramp up Rate (t L to t P ) 3 C/second max. Liquidous Temperature (T L ) 27 C Time (t L ) Maintained Above (T L ) 6 5 seconds Peak Body Package Temperature 26 C + C / 5 C Time (t P ) within 5 C of 26 C 3 seconds Ramp down Rate (T P to T L ) 6 C / second max. Time 25 C to Peak Temperature 8 minutes max. Table 7. ORDERING INFORMATION Part Number Package Packing Method FOD89 DIP 4 Pin Tube ( units per tube) FOD89S SMT 4 Pin (Lead Bend) Tube ( units per tube) FOD89SD SMT 4 Pin (Lead Bend) Tape and Reel (, units per reel) FOD893 DIP 4 Pin, DIN EN/IEC option Tube ( units per tube) FOD893S SMT 4 Pin (Lead Bend), DIN EN/IEC option Tube ( units per tube) FOD893SD SMT 4 Pin (Lead Bend), DIN EN/IEC option Tape and Reel (, units per reel) FOD893W DIP 4 Pin,.4 Lead Spacing, DIN EN/IEC option Tube ( units per tube) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8/D. 7
8 PACKAGE DIMENSIONS PDIP4 4.6 x 6.5, 2.54P CASE 646CD ISSUE O 8
9 PDIP4 4.6 x 6.5, 2.54P CASE 646CA ISSUE O 9
10 PDIP4 GW CASE 79AH ISSUE A
11 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at /site/pdf/patent Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 952 E. 32nd Pkwy, Aurora, Colorado 8 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative FOD89/D
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More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
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