NXH160T120L2Q2F2SG. Split T-Type NPC Power Module 1200 V, 160 A IGBT, 600 V, 100 A IGBT
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1 NXH6TLQFSG Split T-Type NPC Power Module V, 6 A IGBT, 6 V, A IGBT The NXH6TLQFSG is a power module containing a split T type neutral point clamped three level inverter, consisting of two 6 A / V Half Bridge IGBTs with inverse diodes, two Neutral Point A / 6 V rectifiers, two A / 6 V Neutral Point IGBTs with inverse diodes, two Half Bridge 6 A / V rectifiers and a negative temperature coefficient thermistor (NTC). Features Split T type Neutral Point Clamped Three level Inverter Module V IGBT Specifications: V CE(SAT) =.5 V, E SW = 3 J 6 V IGBT specifications: V CE(SAT) =.7 V, E SW = 56 J Baseplate Solderable Pins Thermistor Typical Applications Solar Inverters Uninterruptible Power Supplies QPACK CASE 8AK MARKING DIAGRAM NXH6TLQFSG ATYYWW 7 3 HALF BRIDGE FREEWHEEL DIODE D5 NEUTRAL POINT INVERSE DIODE D 6 T HALF BRIDGE IGBT D HALF BRIDGE INVERSE DIODE NXH6TLQFSG = Device Code YYWW = Year and Work Week Code A = Assembly Site Code T = Test Site Code G = Pb Free Package 7 D6 9 NEUTRAL POINT FREEWHEEL DIODE 5 T NEUTRAL POINT IGBT 5 5 PIN CONNECTIONS NEUTRAL POINT IGBT T3 35 NEUTRAL POINT FREEWHEEL DIODE 38 3 D7 D3 NEUTRAL POINT INVERSE DIODE T HALF BRIDGE IGBT 36 D HALF BRIDGE INVERSE DIODE D8 HALF BRIDGE FREEWHEEL DIODE NTC 7 6 Figure. NXH6TLQFSG Schematic Diagram ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. Semiconductor Components Industries, LLC, 6 December, 7 Rev. Publication Order Number: NXH6TLQ/D
2 NXH6TLQFSG Table. ABSOLUTE MAXIMUM RATINGS (Note ) T J = unless otherwise noted Rating Symbol Value Unit HALF BRIDGE IGBT Collector Emitter Voltage V CES V Gate Emitter Voltage V GE ± V Continuous Collector T h = 8 C ( T J = 75 C) I C 8 A Pulsed Collector Current (T J = 75 C) I Cpulse 53 A Maximum Power T h = 8 C (T J = 75 C) P tot 5 W Short Circuit Withstand V GE = 5 V, V CE = 6 V, T J 5 C T sc 5 s Minimum Operating Junction Temperature T JMIN C Maximum Operating Junction Temperature T JMAX 5 C NEUTRAL POINT IGBT Collector Emitter Voltage V CES 6 V Gate Emitter Voltage V GE ± V Continuous Collector T h = 8 C (T J = 75 C) I C 6 A Pulsed Collector Current (T J = 75 C) I Cpulse 38 A Maximum Power T h = 8 C (T J = 75 C) P tot 3 W Short Circuit Withstand V GE = 5 V, V CE = V, T J 5 C T sc 5 s Minimum Operating Junction Temperature T JMIN C Maximum Operating Junction Temperature T JMAX 5 C HALF BRIDGE FREEWHEEL DIODE Peak Repetitive Reverse Voltage V RRM V Continuous Forward T h = 8 C (T J = 75 C) I F 56 A Repetitive Peak Forward Current (T J = 75 C, t p limited by T Jmax ) I FRM 5 A Maximum Power T h = 8 C (T J = 75 C) P tot W Minimum Operating Junction Temperature T JMIN C Maximum Operating Junction Temperature T JMAX 5 C HALF BRIDGE INVERSE DIODE Peak Repetitive Reverse Voltage V RRM V Continuous Forward T h = 8 C (T J = 75 C) I F 9 A Repetitive Peak Forward Current (T J = 75 C, t p limited by T Jmax ) I FRM 5 A Maximum Power T h = 8 C (T J = 75 C) P tot 63 W Minimum Operating Junction Temperature T JMIN C Maximum Operating Junction Temperature T JMAX 5 C NEUTRAL POINT FREEWHEEL DIODE Peak Repetitive Reverse Voltage V RRM 6 V Continuous Forward T h = 8 C (T J = 75 C) I F 3 A Repetitive Peak Forward Current (T J = 75 C, t p limited by T Jmax ) I FRM 3 A Maximum Power T h = 8 C (T J = 75 C) P tot 98 W Minimum Operating Junction Temperature T JMIN C Maximum Operating Junction Temperature T JMAX 5 C NEUTRAL POINT INVERSE DIODE Peak Repetitive Reverse Voltage V RRM 6 V Continuous Forward T h = 8 C (T J = 75 C) I F 38 A Repetitive Peak Forward Current (T J = 75 C, t p limited by T Jmax ) I FRM A Maximum Power T h = 8 C (T J = 75 C) P tot 79 W Minimum Operating Junction Temperature T JMIN C
3 NXH6TLQFSG Table. ABSOLUTE MAXIMUM RATINGS (Note ) T J = unless otherwise noted Rating Symbol NEUTRAL POINT INVERSE DIODE Maximum Operating Junction Temperature T JMAX 5 C THERMAL PROPERTIES Storage Temperature range T stg to 5 C INSULATION PROPERTIES Isolation test voltage, t = sec, 6Hz V is 3 V RMS Creepage distance.7 mm Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe Operating parameters. Table. RECOMMENDED OPERATING RANGES Value Rating Symbol Min Max Unit Module Operating Junction Temperature T J (T jmax 5) C Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. Table 3. ELECTRICAL CHARACTERISTICS T J = unless otherwise noted Parameter Test Conditions Symbol Min Typ Max Unit HALF BRIDGE IGBT CHARACTERISTICS Collector Emitter Cutoff Current V GE = V, V CE = V I CES 5 A Collector Emitter Saturation Voltage V GE = 5 V, I C = 6 A, T J = V CE(sat).5.7 V V GE = 5 V, I C = 6 A, T J = 5 C.8 Gate Emitter Threshold Voltage V GE = V CE, I C = 6 ma V GE(TH) V Gate Leakage Current V GE = V, V CE = V I GES 5 na Turn on Delay Time T J = t d(on) 5 ns Rise Time V CE = 35 V, I C = A, t r 5 Turn off Delay Time t d(off) 7 Fall Time t f 55 Turn on Switching Loss per Pulse E on 7 J Turn off Switching Loss per Pulse E off 6 Turn on Delay Time T J = t d(on) 95 ns Rise Time V CE = 35 V, I C = A, t r 55 Turn off Delay Time t d(off) 85 Fall Time t f 5 Turn on Switching Loss per Pulse E on 3 J Turn off Switching Loss per Pulse E off 6 Input Capacitance V CE = 5 V. V GE = V. f = khz C ies 388 pf Output Capacitance C oes 8 Reverse Transfer Capacitance C res 68 Total Gate Charge V CE = 6 V, I C = 6 A, V GE = 5 V Q g 6 nc Thermal Resistance chip to heatsink Thermal grease, Thickness < m, =.8 W/mK Unit R thjh.9 C/W 3
4 NXH6TLQFSG Table 3. ELECTRICAL CHARACTERISTICS T J = unless otherwise noted Parameter Test Conditions Symbol NEUTRAL POINT FREEWHEEL DIODE CHARACTERISTICS Diode Reverse Leakage Current V R = 6 V I R A Diode Forward Voltage I F = A, T J = V F..5 V Min Typ I F = A, T J = 5 C. Reverse Recovery Time T J = t rr 5 ns Reverse Recovery Charge V CE = 35 V, I C = A, Q rr 7 nc Peak Reverse Recovery Current I RRM 59 A Peak Rate of Fall of Recovery Current di/dt 5 A/ s Reverse Recovery Energy E rr 38 J Reverse Recovery Time T J = t rr 77 ns Reverse Recovery Charge V CE = 35 V, I C = A, Q rr 36 nc Peak Reverse Recovery Current I RRM 77 A Peak Rate of Fall of Recovery Current di/dt 9 A/ s Reverse Recovery Energy E rr 78 J Thermal Resistance chip to heatsink Thermal grease, Thickness < m, =.8 W/mK Max Unit R thjh.8 C/W NEUTRAL POINT IGBT CHARACTERISTICS Collector Emitter Cutoff Current V GE = V, V CE = 6 V I CES 3 A Collector Emitter Saturation Voltage V GE = 5 V, I C = A, T J = V CE(sat).7.8 V V GE = 5 V, I C = A, T J = 5 C.5 Gate Emitter Threshold Voltage V GE = V CE, I C =. ma V GE(TH) V Gate Leakage Current V GE = V, V CE = V I GES 3 na Turn on Delay Time T J = t d(on) 5 ns Rise Time V CE = 35 V, I C = A, t r 35 Turn off Delay Time t d(off) 35 Fall Time t f Turn on Switching Loss per Pulse E on 87 J Turn off Switching Loss per Pulse E off 69 Turn on Delay Time T J = t d(on) 5 ns Rise Time V CE = 35 V, I C = A, t r 37 Turn off Delay Time t d(off) 5 Fall Time t f 65 Turn on Switching Loss per Pulse E on 3 J Turn off Switching Loss per Pulse E off 5 Input Capacitance V CE = 5 V, V GE = V, f = khz C ies 88 pf Output Capacitance C oes 56 Reverse Transfer Capacitance C res 5 Total Gate Charge V CE = 8 V, I C = 8 A, V GE = 5 V Q g 79 nc Thermal Resistance chip to heatsink Thermal grease, Thickness < m, =.8 W/mK R thjh. C/W
5 NXH6TLQFSG Table 3. ELECTRICAL CHARACTERISTICS T J = unless otherwise noted Parameter Test Conditions Symbol HALF BRIDGE FREEWHEEL DIODE CHARACTERISTICS Diode Reverse Leakage Current V R = V I R A Diode Forward Voltage I F = 6 A, T J = V F V Min Typ I F = 6 A, T J = 5 C. Reverse Recovery Time T J = t rr 3 ns Reverse Recovery Charge V CE = 35 V, I C = A, Q rr 37 nc Peak Reverse Recovery Current I RRM 68 A Peak Rate of Fall of Recovery Current di/dt 3 A/ s Reverse Recovery Energy E rr 5 J Reverse Recovery Time T J = t rr 5 ns Reverse Recovery Charge V CE = 35 V, I C = A, Q rr 9 nc Peak Reverse Recovery Current I RRM A Peak Rate of Fall of Recovery Current di/dt 6 A/ s Reverse Recovery Energy E rr 75 J Thermal Resistance chip to heatsink Thermal grease, Thickness < m, =.8 W/mK Max Unit R thjh.67 C/W HALF BRIDGE INVERSE DIODE CHARACTERISTICS Diode Forward Voltage I F = 7 A, T J = V F.9.8 V I F = 7 A, T J = 5 C.37 Thermal Resistance chip to heatsink Thermal grease, Thickness < m, =.8 W/mK R thjh.5 C/W NEUTRAL POINT INVERSE DIODE CHARACTERISTICS Diode Forward Voltage I F = 3 A, T J = V F..75 V I F = 3 A, T J = 5 C.6 Thermal Resistance chip to heatsink THERMISTOR CHARACTERISTICS Thermal grease, Thickness m, =.8 W/mK R thjh. C/W Nominal resistance R 5 k Nominal resistance T = C R 86 Deviation of R5 R/R 5 5 % Power dissipation P D mw Power dissipation constant mw/k B value B(5/5), tolerance ±3% 395 K B value B(5/), tolerance ±3% 3998 K ORDERING INFORMATION Device Marking Package Shipping NXH6TLQFSG QPACK NXH6TLQFSG QPACK Case 8AK (Pb Free and Halide Free) Units / Blister Tray 5
6 NXH6TLQFSG TYPICAL CHARACTERISTICS Half Bridge IGBT and Neutral Point Diode V to V V T J = V CE, COLLECTOR EMITTER VOLTAGE (V) Figure. IGBT Typical Output Characteristics 3 9 V 8 V 7 V T J = 5 C 7 V to V V V CE, COLLECTOR EMITTER VOLTAGE (V) Figure. IGBT Typical Output Characteristics 3 9 V 8 V 7 V T J = 5 C T J = 6 8 I F, FORWARD CURRENT (A) 5 5 T J = 5 C.5 T J = V GE, GATE EMITTER VOLTAGE (V) V F, FORWARD VOLTAGE (V) Figure 3. IGBT Typical Transfer Characteristics Figure. Diode Forward Characteristic E ON, TURN ON LOSS ( J) V CE = 35 V E OFF, TURN OFF LOSS ( J) V CE = 35 V Figure 5. Typical Turn On Loss vs. IC Figure 6. Typical Turn Off Loss vs. IC 6
7 NXH6TLQFSG TYPICAL CHARACTERISTICS Half Bridge IGBT and Neutral Point Diode TIME (ns) T T t t 5 V CE = 35 V Figure 7. Typical Turn On Loss vs. IC TIME (ns) 8 6 T T t t V CE = 35 V Figure 8. Typical Turn Off Loss vs. IC t rr, REVERSE RECOVERY TIME (ns) V CE = 35 V 5 5 Figure 9. Typical Reverse Recovery Time vs. IC Q rr, REVERSE RECOVERY CHARGE (nc) V CE = 35 V Figure. Typical Reverse Recovery Charge vs. IC I rrm, REVERSE RECOVERY CURRENT (A) V CE = 35 V 5 di/dt, DIODE CURRENT SLOPE (A/ s) V CE = 35 V 5 5 Figure. Typical Reverse Recovery Peak Current vs. IC Figure. Typical Diode Current Slope vs. IC 7
8 NXH6TLQFSG TYPICAL CHARACTERISTICS Half Bridge IGBT and Neutral Point Diode E rr, REVERSE RECOVERY ENERGY ( J) 8 6 V CE = 35 V 5 5 V GE, GATE VOLTAGE (V) V CE = 6 V I C = 6 A 5 5 Q G, GATE CHARGE (nc) Figure 3. Typical Reverse Recovery Energy vs. IC Figure. Gate Voltage vs. Gate Charge R(t), SQUARE WAVE PEAK ( C/W).... DUT = 5% 3% % 5% % % Single Pulse..E 6.E 5.E.E 3.E.E.E+.E+ ON PULSE WIDTH (s) Figure 5. IGBT Transient Thermal Impedance R(t), SQUARE WAVE PEAK ( C/W).... DUT = 5% 3% % 5% % % Single Pulse..E 6.E 5.E.E 3.E.E.E+.E+ ON PULSE WIDTH (s) Figure 6. Diode Transient Thermal Impedance 8
9 NXH6TLQFSG TYPICAL CHARACTERISTICS Neutral Point IGBT and Half Bridge Diode T J = 7 V to V V V 9 V 8 V T J = 5 C 7 V to V 9 V 8 V 7 V 3 7 V V CE, COLLECTOR EMITTER VOLTAGE (V) Figure 7. IGBT Typical Output Characteristics V CE, COLLECTOR EMITTER VOLTAGE (V) Figure 8. IGBT Typical Output Characteristics T J = 5 C T J = 6 8 I F, FORWARD CURRENT (A) 5 5 T J = 5 C T J = V GE, GATE EMITTER VOLTAGE (V) Figure 9. IGBT Typical Transfer Characteristics V F, FORWARD VOLTAGE (V) Figure. Diode Forward Characteristic E ON, TURN ON LOSS ( J) V CE = 35 V 5 5 E OFF, TURN OFF LOSS ( J) V CE = 35 V 5 5 Figure. Typical Turn On Loss vs. IC Figure. Typical Turn Off Loss vs. IC 9
10 NXH6TLQFSG TYPICAL CHARACTERISTICS Neutral Point IGBT and Half Bridge Diode TIME (ns) T T t t 5 V CE = 35 V Figure 3. Typical Turn On Loss vs. IC TIME (ns) T T t t V CE = 35 V Figure. Typical Switching Times vs. IC t rr, REVERSE RECOVERY TIME (ns) V CE = 35 V 5 5 Figure 5. Typical Reverse Recovery Time vs. IC Q rr, REVERSE RECOVERY CHARGE (nc),,, 8 6 V CE = 35 V 5 5 Figure 6. Typical Reverse Recovery Charge vs. IC I rrm, REVERSE RECOVERY CURRENT (A) V CE = 35 V Figure 7. Typical Reverse Recovery Peak Current vs. IC di/dt, DIODE CURRENT SLOPE (A/ s) V CE = 35 V 5 5 Figure 8. Typical Diode Current Slope vs. IC
11 NXH6TLQFSG TYPICAL CHARACTERISTICS Neutral Point IGBT and Half Bridge Diode E rr, REVERSE RECOVERY ENERGY ( J) V CE = 35 V 5 5 V GE, GATE VOLTAGE (V) V CE = 8 V I C = 8 A 6 8 Q G, GATE CHARGE (nc) Figure 9. Typical Reverse Recovery Energy vs. IC Figure 3. Gate Voltage vs. Gate Charge R(t), SQUARE WAVE PEAK ( C/W).... DUT = 5% 3% % 5% % %..E 6 Single Pulse.E 5.E.E 3.E.E.E+.E+ ON PULSE WIDTH (s) Figure 3. IGBT Transient Thermal Impedance R(t), SQUARE WAVE PEAK ( C/W)... DUT = 5% 3% % 5% % % Single Pulse..E 6.E 5.E.E 3.E.E.E+.E+ ON PULSE WIDTH (s) Figure 3. Diode Transient Thermal Impedance
12 NXH6TLQFSG TYPICAL CHARACTERISTICS Half Bridge IGBT Protection Diode 5 C I F, FORWARD CURRENT (A) V F, FORWARD VOLTAGE (V) Figure 33. Diode Forward Characteristic 6 R(t), SQUARE WAVE PEAK ( C/W) DUT = 5% 3%. % 5% %. %. Single Pulse..E 6.E 5.E.E 3.E.E.E+.E+ ON PULSE WIDTH (s) Figure 3. Diode Transient Thermal Impedance
13 NXH6TLQFSG TYPICAL CHARACTERISTICS Neutral Point IGBT Protection Diode 9 5 C I F, FORWARD CURRENT (A) V F, FORWARD VOLTAGE (V) Figure 35. Diode Forward Characteristic R(t), SQUARE WAVE PEAK ( C/W) DUT = 5% 3%. % 5% %. %. Single Pulse..E 6.E 5.E.E 3.E.E.E+.E+ ON PULSE WIDTH (s) Figure 36. Diode Transient Thermal Impedance TYPICAL CHARACTERISTICS Thermistor K K RESISTANCE ( ) 6K K 8K K TEMPERATURE ( C) Figure 37. Thermistor Characteristics 5 3
14 NXH6TLQFSG PACKAGE DIMENSIONS PIM56, 93x7 (SOLDER PIN) CASE 8AK ISSUE B ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at /site/pdf/patent Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 95 E. 3nd Pkwy, Aurora, Colorado 8 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative NXH6TLQ/D
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More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
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