FODM3011, FODM3012, FODM3022, FODM3023, FODM3052, FODM Pin Full Pitch Mini-Flat Package Random-Phase Triac Driver Output Optocouplers

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1 FODM3, FODM3, FODM3, FODM33, FODM35, FODM353 -Pin Full Pitch Mini-Flat Package Random-Phase Triac Driver Output Optocouplers Features Compact -pin Surface Mount Package (. mm Maximum Standoff Height) Peak Blocking Voltage 5V (FODM3X) V (FODM3X) 6V (FODM35X) Safety and Regulatory Approvals: UL577, 3,75 VAC RMS for Minute DIN-EN/IEC , 565 V Peak Working Insulation Voltage Applications Industrial Controls Traffic Lights Vending Machines Solid State Relay Lamp Ballasts Solenoid/Valve Controls Static AC Power Switch Incandescent Lamp Dimmers Motor Control Functional Schematic ANODE CATHODE 3 MAIN TERMINAL MAIN TERMINAL Description The FODM3X, FODM3X, and FODM35X series consists of a GaAs infrared emitting diode driving a silicon bilateral switch housed in a compact -pin miniflat package. The lead pitch is.5 mm. They are designed for interfacing between electronic controls and power triacs to control resistive and inductive loads for 5 V/ V operations. Package Outlines FODM3XX -Pin Full Pitch Mini-Flat Package Random-Phase Triac Driver Output Optocouplers Figure. Functional Schematic Figure. Package Outlines 3 Semiconductor Components Industries, LLC. October-7, Rev. Publication Order Number: FODM353-NF98/D

2 Safety and Insulation Ratings As per DIN EN/IEC , this optocoupler is suitable for safe electrical insulation only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Parameter Characteristics Installation Classifications per DIN VDE < 5 V RMS I IV /.89 Table, For Rated Mains Voltage < 3 V RMS I III Climatic Classification // Pollution Degree (DIN VDE /.89) Comparative Tracking Index 75 Symbol Parameter Value Unit V PR Input-to-Output Test Voltage, Method A, V IORM x.6 = V PR, Type and Sample Test with t m = s, Partial Discharge < 5 pc 9 V peak Input-to-Output Test Voltage, Method B, V IORM x.875 = V PR, % Production Test with t m = s, Partial Discharge < 5 pc 6 V peak V IORM Maximum Working Insulation Voltage 565 V peak V IOTM Highest Allowable Over-Voltage 6 V peak External Creepage 5 mm External Clearance 5 mm DTI Distance Through Insulation (Insulation Thickness). mm T S Case Temperature () 5 C I S,INPUT Input Current () ma P S,OUTPUT Output Power () 3 mw R IO Insulation Resistance at T S, V IO = 5 V () > 9 Note:. Safety limit values maximum values allowed in the event of a failure. FODM3XX -Pin Full Pitch Mini-Flat Package Random-Phase Triac Driver Output Optocouplers

3 Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. = 5 C unless otherwise specified. Symbol Parameter Value Unit EMITTER T STG Storage Temperature -55 to +5 C T OPR Operating Temperature - to + C T J Junction Temperature - to +5 C T SOL Lead Solder Temperature 6 for sec C I F (avg) Continuous Forward Current 6 ma I F (pk) Peak Forward Current ( μs pulse, 3 pps.) A DETECTOR V R Reverse Input Voltage 3 V P D Power Dissipation (No derating required over operating temp. range) mw I T(RMS) On-State RMS Current 7 FODM3, FODM3 5 ma (RMS) V DRM Off-State Output Terminal Voltage FODM3, FODM33 V FODM35, FODM353 6 P D Power Dissipation (No derating required over operating temp. range) 3 mw FODM3XX -Pin Full Pitch Mini-Flat Package Random-Phase Triac Driver Output Optocouplers 3

4 Electrical Characteristics = 5 C unless otherwise specified. Individual Component Characteristics Symbol Parameter Test Conditions Device Min. Typ. Max. Unit EMITTER V F Input Forward Voltage I F = ma All..5 V I R Reverse Leakage Current V R = 3 V, = 5 C All. μa DETECTOR I DRM dv/dt Peak Blocking Current Either Direction Critical Rate of Rise of Off-State Voltage Rated V DRM, I F = () All na I F = (Figure 8) (3) FODM3, FODM3, FODM3, FODM33 FODM35, FODM353 Notes:. Test voltage must be applied within dv/dt rating. 3. This is static dv/dt. See Figure for test circuit Commutating dv/dt is function of the load-driving thyristor(s) only. Transfer Characteristics Symbol Parameter Test Conditions Device Min. Typ. Max. Unit I T I H LED Trigger Current Main Terminal Voltage = 3 V () FODM3, FODM3, FODM35 V Peak On-State Voltage Either TM Direction I TM = ma peak All. 3 V Notes:. All devices are guaranteed to trigger at an I F value of less than or equal to the max I FT specification. For optimum operation over temperature and lifetime of the device, the LED should be biased with an I F that is at least 5% higher than the maximum I FT specification. The I FT should not exceed the absolute maximum rating of 6 ma. Example: For FODM353M, the minimum I F bias should be 5 ma x 5% = 7.5 ma Isolation Characteristics Symbol Parameter Test Conditions Device Min. Typ. Max. Unit V ISO Holding Current, Either Direction Steady State Isolation Voltage Minute, R.H. = % to 6% FODM3, FODM33, FODM353, 5 V/μs ma All 5 µa All 3,75 VAC RMS FODM3XX -Pin Full Pitch Mini-Flat Package Random-Phase Triac Driver Output Optocouplers

5 Typical Performance Characteristics (V) V F - FORWARD VOLTAGE D) I H ( ) / I H ( = 5 C) I H (NORMALIZE = - C 5 C C.9 I F - FORWARD CURRENT (ma) Fig 3. LED Forward Voltage vs. Forward Current NORMALIZED TO = 5 C AMBIENT TEMPERATURE ( C) Fig 5. Normalized Holding Current vs. Ambient Temperature - LEAKAGE CURRENT ( na) DRM I I FT (NORMALIZE D) I FT ( ) / I FT ( = 5 C) V DRM = 6 V AMBIENT TEMPERATURE ( C) Fig. Leakage Current vs. Ambient Temperature. V TM = 3 V NORMALIZED TO = 5 C AMBIENT TEMPERATURE ( C) Fig 6. Normalized Trigger Current vs. Ambient Temperature FODM3XX -Pin Full Pitch Mini-Flat Package Random-Phase Triac Driver Output Optocouplers 5

6 Typical Performance Characteristics (Continued) I FT (NORMALIZED) = I FT (PW IN ) / I FT (PW A >> µs) = 5 C NORMALIZED TO PW IN >> µs 8 6 PW IN - LED TRIGGER PULSE WIDTH (µs) Fig 7. LED Current Required to Trigger vs. LED Pulse Width I TM - ON-STATE CURRENT (ma) = 5 C V TM - ON-STATE VOLTAGE (V) Fig 9. On-State Characteristics V DRM (NORMALIZED) = V DRM ( ) / V DRM ( = 5 C). NORMALIZED TO = 5 C AMBIENT TEMPERATURE ( C) Fig 8. Normalized Off-State Output Terminal Voltage vs. Ambient Temperature FODM3XX -Pin Full Pitch Mini-Flat Package Random-Phase Triac Driver Output Optocouplers 6

7 Typical Application Information 6 V (FODM35) (FODM353) V (FODM3) (FODM33) 5 V (FODM3) (FODM3) Vdc PULSE INPUT APPLIED VOLTAGE WAVEFORM VOLTS V CC R in MERCURY WETTED RELAY τ RC R TEST C TEST 378 V (FODM35, FODM353) 5 V (FOMD3, FODM33) 58 V (FODM3, FODM3) D.U.T. Figure. Resistive Load 3. μf R = kω X SCOPE PROBE NOTE: This optoisolator should not be used to drive a load directly. It is intended to be a trigger device only. V CC R in FODM3 FODM3 FODM3 FODM33 FODM35 FODM353 FODM3 FODM3 FODM3 FODM33 FODM35 FODM Ω Vmax = 6 V (FODM35, FODM353) = V (FODM3, FODM33) = 5 V (FODM3, FODM3).63 Vmax dv/dt = τ = RC Figure. Static dv/dt Test Circuit R L 8 Ω. kω C. The mercury wetted relay provides a high speed repeated pulse to the D.U.T.. x scope probes are used, to allow high speeds and voltages. 3. The worst-case condition for static dv/dt is established by triggering the D.U.T. with a normal LED input current, then removing the current. The variable R TEST allows the dv/dt to be gradually increased until the D.U.T. continues to trigger in response to the applied voltage pulse, even after the LED current has been removed. The dv/dt is then decreased until the D.U.T. stops triggering. τ RC is measured at this point and recorded. V 6 Hz Z L V 6 Hz = = 378 τ (FODM353) RC (FODM35) 5 τ (FODM33) RC (FODM3) 58 τ (FODM3) RC (FODM3) FODM3XX -Pin Full Pitch Mini-Flat Package Random-Phase Triac Driver Output Optocouplers Figure. Inductive Load with Sensitive Gate Triac (I GT 5 ma) 7

8 Typical Application Information (Continued) V CC R in FODM3 FODM33 FODM35 FODM Ω 7 Ω.5 μf Figure 3. Typical Application Circuit 39 Ω In this circuit the hot side of the line is switched and the load connected to the cold or ground side.. μf LOAD VAC HOT GROUND The 39 Ω resistor and.μf capacitor are for snubbing of the triac, and the 7 Ω resistor and.5 μf capacitor are for snubbing the coupler. These components may or may not be necessary depending upon the particular and load used. FODM3XX -Pin Full Pitch Mini-Flat Package Random-Phase Triac Driver Output Optocouplers 8

9 Reflow Profile Temperature ( C) TP TL Tsmax Tsmin Profile Freature Pb-Free Assembly Profile Temperature Min. (Tsmin) 5 C Temperature Max. (Tsmax) C Time (t S ) from (Tsmin to Tsmax) Ramp-up Rate (t L to t P ) 6 seconds 3 C/second max. Liquidous Temperature (T L ) 7 C Time (t L ) Maintained Above (T L ) Peak Body Package Temperature Time (t P ) within 5 C of 6 C Ramp-down Rate (T P to T L ) Time 5 C to Peak Temperature Max. Ramp-up Rate = 3 C/S Max. Ramp-down Rate = 6 C/S Preheat Area t s Time 5 C to Peak Time (seconds) t L 6 5 seconds 6 C + C / 5 C 3 seconds 6 C/second max. 8 minutes max. tp 36 FODM3XX -Pin Full Pitch Mini-Flat Package Random-Phase Triac Driver Output Optocouplers 9

10 Ordering Information Part Number Package Packing Method FODM3 Full Pitch Mini-Flat -Pin Tube ( units) FODM3R Full Pitch Mini-Flat -Pin Tape and Reel (5 Units) FODM3V Full Pitch Mini-Flat -Pin, DIN EN/IEC Option Tube ( Units) FODM3RV Full Pitch Mini-Flat -Pin, DIN EN/IEC Option Tape and Reel (5 Units) Note: The product orderable part number system listed in this table also applies to the FODM3, FODM3, FODM33, FODM35, and FODM353 products. Marking Information Table. Top Mark Definitions 3 Figure. Top Mark ON Semiconductor Logo Device Number 3 DIN EN/IEC Option (only appears on component ordered with this option) One-Digit Year Code, e.g., 6 5 Digit Work Week, Ranging from to 53 6 Assembly Package Code 5 3 V X YY R 6 FODM3XX -Pin Full Pitch Mini-Flat Package Random-Phase Triac Driver Output Optocouplers

11 Tape Specifications K t W d Tape Width Tape Thickness Sprocket Hole Pitch Sprocket Hole Dia. Sprocket Hole Location Pocket Location Pocket Pitch Pocket Dimension Pocket Hole Dia. Cover Tape Width Cover Tape Thickness Max. Component Rotation or Tilt Devices Per Reel Reel Diameter P.5 Pitch Description Symbol Dimensions W t P E F P A B D K D W A P P B P 8.±. D.±..35±..±..55±..75±. 5.5±..±..75±. 7.3±..3±..55±. 9. d.65±. max 5 33 mm (3") D F E W FODM3XX -Pin Full Pitch Mini-Flat Package Random-Phase Triac Driver Output Optocouplers

12 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at /site/pdf/patent Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 95 E. 3nd Pkwy, Aurora, Colorado 8 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com Semiconductor Components Industries, LLC N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative

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