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1 Is Now Part of To learn more about ON Semiconductor, please visit our website at ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

2 FOD3 3A Output Current, High Speed MOSFET Gate Driver Optocoupler Features High noise immunity characterized by 0kV/µs (Typ.) common mode V CM =,000V Guaranteed operating temperature range of -0 C to 00 C 3A peak output current Fast switching speed 0ns max. propagation delay ns max pulse width distortion Fast output rise/fall time Offers lower dynamic power dissipation 0kHz maximum switching speed Wide V DD operating range: 0V to 30V Use of P-Channel MOSFETs at output stage enables output voltage swing close to the supply rail (rail-to-rail output) 000Vrms, minute isolation Under voltage lockout protection (UVLO) with hysteresis optimized for driving MOSFETs Minimum creepage distance of.0mm Minimum clearance distance of 0mm to mm (option TV or TSV) Minimum insulation thickness of 0.mm UL and VDE*, peak working insulation voltage (V IORM ) Applications February 0 Plasma Display Panel High performance DC/DC convertor High performance switch mode power supply High performance uninterruptible power supply Isolated Power MOSFET gate drive Description The FOD3 is a 3A Output Current, High Speed MOSFET Gate Drive Optocoupler. It consists of a aluminium gallium arsenide (AlGaAs) light emitting diode optically coupled to a CMOS detector with PMOS and NMOS output power transistors integrated circuit power stage. It is ideally suited for high frequency driving of power MOSFETS used in Plasma Display Panels (PDPs), motor control inverter applications and high performance DC/DC converters. The device is packaged in an -pin dual in-line housing compatible with 0 C reflow processes for lead free solder compliance. FOD3 3A Output Current, High Speed MOSFET Gate Driver Optocoupler *Requires V ordering option Functional Block Diagram Package Outlines NC V DD ANODE 7 V O CATHODE 3 V O NC V SS Note: A 0.µF bypass capacitor must be connected between pins and. 00 Fairchild Semiconductor Corporation FOD3 Rev..0.9

3 Truth Table Pin Definitions V DD V SS Positive Going (Turn-on) V DD V SS Negative Going (Turn-off) LED V O Off 0V to 30V 0V to 30V Low On 0V to 7.V 0V to 7V Low On 7.V to 9V 7V to.v Transition On 9V to 30V.V to 30V High Pin # Name Description NC Not Connected Anode LED Anode 3 Cathode LED Cathode NC Not Connected V SS Negative Supply Voltage V O Output Voltage (internally connected to V O ) 7 V O Output Voltage V DD Positive Supply Voltage FOD3 3A Output Current, High Speed MOSFET Gate Driver Optocoupler 00 Fairchild Semiconductor Corporation FOD3 Rev..0.9

4 Safety and Insulation Ratings As per DIN EN/IEC This optocoupler is suitable for safe electrical insulation only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Symbol Parameter Min. Typ. Max. Unit Installation Classifications per DIN VDE 00/.9 Table For Rated Mains Voltage < 0Vrms I IV For Rated Mains Voltage < 300Vrms I IV For Rated Mains Voltage < 0Vrms I III For Rated Mains Voltage < 00Vrms I III For Rated Mains Voltage < 000Vrms (Option T, TS) I III Climatic Classification 0/00/ Pollution Degree (DIN VDE 00/.9) CTI Comparative Tracking Index 7 V PR Input to Output Test Voltage, Method b, V IORM x.7 = V PR, 00% Production Test with tm = sec., Partial Discharge < pc Input to Output Test Voltage, Method a, V IORM x. = V PR, Type and Sample Test with tm = 0 sec.,partial Discharge < pc V IORM Max Working Insulation Voltage, V peak V IOTM Highest Allowable Over Voltage 000 V peak External Creepage mm External Clearance 7. mm External Clearance (for Option T or TS - 0. Lead Spacing) 0. mm Insulation Thickness 0. mm Safety Limit Values Maximum Values Allowed in the Event of a Failure T Case Case Temperature 0 C I S,INPUT Input Current ma P S,OUTPUT Output Power (Duty Factor.7%) 0 mw R IO Insulation Resistance at T S, V IO = 00V 0 9 Ω FOD3 3A Output Current, High Speed MOSFET Gate Driver Optocoupler 00 Fairchild Semiconductor Corporation FOD3 Rev

5 Absolute Maximum Ratings (T A = C unless otherwise specified) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Parameter Value Units T STG Storage Temperature -0 to C T OPR Operating Temperature -0 to 00 C T J Junction Temperature -0 to C T SOL Lead Solder Temperature Wave solder 0 for 0 sec. C (Refer to Reflow Temperature Profile, pg. ) I F(AVG) Average Input Current () ma I F(tr, tf) LED Current Minimum Rate of Rise/Fall 0 ns V R Reverse Input Voltage V I OH(PEAK) High Peak Output Current () 3 A I OL(PEAK) Low Peak Output Current () 3 A V DD V SS Supply Voltage -0. to 3 V V O(PEAK) Output Voltage 0 to V DD V P O Output Power Dissipation () 0 mw P D Total Power Dissipation () 9 mw Recommended Operating Conditions The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not recommend exceeding them or designing to absolute maximum ratings. Symbol Parameter Value Units V DD V SS Power Supply 0 to 30 V I F(ON) Input Current (ON) 0 to ma V F(OFF) Input Voltage (OFF) -3.0 to 0. V FOD3 3A Output Current, High Speed MOSFET Gate Driver Optocoupler 00 Fairchild Semiconductor Corporation FOD3 Rev..0.9

6 Electrical-Optical Characteristics (DC) Apply over all recommended conditions, typical value is measured at V DD = 30V, V SS = 0V, T A = C, unless otherwise specified. Symbol Parameter Test Conditions Min. Typ. Max. Unit I OH High Level Output Current V OH = (V DD V SS V) A V OH = (V DD V SS V). I OL Low Level Output Current V OL = (V DD V SS V) 0. A V OL = (V DD V SS V). V OH High Level Output Voltage ()() I O = -00mA V DD 0. V V OL Low Level Output Voltage ()() I O = 00mA V SS 0. V I DDH High Level Supply Current Output Open,..0 ma I F = 0 to ma I DDL Low Level Supply Current Output Open,..0 ma V F = -3.0 to 0.V I FLH Threshold Input Current Low to High I O = 0mA, V O > V ma V FHL Threshold Input Voltage High to Low I O = 0mA, V O < V 0. V V F Input Forward Voltage I F = 0mA..3. V V F /T A Temperature Coefficient of Forward I F = 0mA -. mv/ C Voltage V UVLO UVLO Threshold V O > V, I F = 0mA V V UVLO V O < V, I F = 0mA V UVLO HYST UVLO Hysteresis 0. V BV R Input Reverse Breakdown Voltage I R = 0µA V C IN Input Capacitance f = MHz, V F = 0V pf FOD3 3A Output Current, High Speed MOSFET Gate Driver Optocoupler 00 Fairchild Semiconductor Corporation FOD3 Rev..0.9

7 Switching Characteristics Apply over all recommended conditions, typical value is measured at V DD = 30V, V SS = 0V, T A = C, unless otherwise specified. Symbol Parameter Test Conditions Min. Typ. Max. Unit ns t PLH Propagation Delay Time to High Output Level (7) I F = 0mA, ns t R g = 0Ω, PHL Propagation Delay Time to Low Output Level (7) 0 0 ns f = 0kHz, P WD Pulse Width Distortion () Duty Cycle = 0%, 3 ns P DD Propagation Delay Difference Between Any C g = 0nF (t PHL t PLH ) Two Parts (9) t r Rise Time C L = 0nF, 3 ns t f Fall Time R g = 0Ω ns t UVLO ON UVLO Turn On Delay.0 µs t UVLO OFF UVLO Turn Off Delay 0.3 µs CM H Output High Level Common Mode Transient T Immunity (0) () CM L Output Low Level Common Mode Transient T Immunity (0) () Isolation Characteristics *Typical values at T A = C A = C, I f = 7mA to ma, V CM = kv, V DD = 30V A = C, V f = 0V, V CM = kv, V DD = 30V 3 0 kv/µs 3 0 kv/µs Symbol Parameter Test Conditions Min. Typ.* Max. Unit V ISO Withstand Isolation Voltage (3) () T A = C, R.H. < 0%, t = min., I I-O 0µA 000 V rms R I-O Resistance (input to output) () V I-O = 00V 0 Ω C I-O Capacitance (input to output) Freq. = MHz pf FOD3 3A Output Current, High Speed MOSFET Gate Driver Optocoupler 00 Fairchild Semiconductor Corporation FOD3 Rev..0.9

8 Notes:. Derate linearly above 79 C free air temperature at a rate of 0.37mA/ C.. Maximum pulse width = 0µs, maximum duty cycle = %. 3 Derate linearly above 79 C, free air temperature at the rate of.73mw/ C.. No derating required across operating temperature range.. In this test, V OH is measured with a dc load current of 00mA. When driving capacitive load V OH will approach V DD as I OH approaches zero amps.. Maximum pulse width = ms, maximum duty cycle = 0%. 7. t PHL propagation delay is measured from the 0% level on the falling edge of the input pulse to the 0% level of the falling edge of the V O signal. t PLH propagation delay is measured from the 0% level on the rising edge of the input pulse to the 0% level of the rising edge of the V O signal.. PWD is defined as t PHL t PLH for any given device.. The difference between t PHL and t PLH between any two FOD3 parts under same operating conditions, with equal loads. 0. Pin and need to be connected to LED common.. Common mode transient immunity in the high state is the maximum tolerable dv CM /dt of the common mode pulse V CM to assure that the output will remain in the high state (i.e. V O > V).. Common mode transient immunity in a low state is the maximum tolerable dv CM /dt of the common mode pulse, V CM, to assure that the output will remain in a low state (i.e. V O <.0V). 3. In accordance with UL 77, each optocoupler is proof tested by applying an insulation test voltage > 000Vrms, 0Hz for second (leakage detection current limit I I-O < 0µA).. Device considered a two-terminal device: pins on input side shorted together and pins on output side shorted together. FOD3 3A Output Current, High Speed MOSFET Gate Driver Optocoupler 00 Fairchild Semiconductor Corporation FOD3 Rev

9 Typical Performance Curves (VOH - VDD) HIGH OUTPUT VOLTAGE DROP (V) Fig. Output High Voltage Drop vs. Output High Current 0. IOH OUTPUT HIGH CURRENT (A) I OH OUTPUT HIGH CURRENT (A) Fig. 3 Output High Current vs. Ambient Temperature Frequency = 00Hz Duty Cycle = 0.% I F = 0mA to ma V DD = V to 30V T A =00 C V O = V V O = 3V Frequency = 00Hz Duty Cycle = 0.% I F = 0mA to ma V DD = V to 30V V SS = 0V T A = -0 C T A = C T A AMBIENT TEMPERATURE ( C) (VOH - VDD) HIGH OUTPUT VOLTAGE DROP (V) Fig. Output High Voltage Drop vs. Ambient Temperature V DD = V to 30V V SS = 0V I F = 0mA to ma I O = -00mA IOH OUTPUT HIGH CURRENT (A) T A AMBIENT TEMPERATURE ( C) Fig. Output High Current vs. Ambient Temperature Frequency = 00Hz Duty Cycle = 0.% I F = 0mA to ma V DD = V to 30V V O = V V O = 3V T A AMBIENT TEMPERATURE ( C) FOD3 3A Output Current, High Speed MOSFET Gate Driver Optocoupler VOL OUTPUT LOW VOLTAGE (V) Fig. Output Low Voltage vs. Output Low Current 3 Frequency = 00Hz Duty Cycle = 99.9% V F (off) = 0.V V DD = V to 30V V SS = 0V T A =00 C T A = -0 C T A = C VOL OUTPUT LOW VOLTAGE (V) Fig. Output Low Voltage vs. Ambient Temperature V DD = V to 30V V SS = 0V V F = -3V to 0.V I O = 00mA I OL OUTPUT LOW CURRENT (A) T A AMBIENT TEMPERATURE ( C) 00 Fairchild Semiconductor Corporation FOD3 Rev..0.9

10 Typical Performance Curves (Continued) IDD SUPPLY CURRENT (ma) IFLH LOW-to-HIGH INPUT CURRENT THRESHOLD (ma) IOL OUTPUT LOW CURRENT (A) Fig. 7 Output Low Current vs. Ambient Temperature Frequency = 00Hz Duty Cycle = 99.% V F = 0.V V DD = V to 30V V O = V V O = 3V T A AMBIENT TEMPERATURE ( C) Fig. 9 Supply Current vs. Ambient Temperature V DD = V to 30V V SS = 0V I F = 0mA (for I DDL ) I F = 0mA (for I DDH ) I DDH (30V) I DDL (30V) I DDH (V) I DDL (V) T A AMBIENT TEMPERATURE ( C) Fig. Low-to-High Input Current Threshold vs. Ambient Temperature V DD = V to 30V V SS = 0V Output = Open T A AMBIENT TEMPERATURE ( C) IOL OUTPUT LOW CURRENT (A) IDD SUPPLY CURRENT (ma) tp PROPAGATION DELAY (ns) Fig. Output Low Current vs. Ambient Temperature Frequency = 00Hz Duty Cycle = 99.% V F = 0.V V DD = V to 30V V O = V V O = 3V T A AMBIENT TEMPERATURE ( C) Fig. 0 Supply Current vs. Supply Voltage I F = 0mA (for I DDL ) I F = 0mA (for I DDH ) V SS = 0V T A = C I DDH I DDL V DD SUPPLY VOLTAGE (V) Fig. Propagation Delay vs. Supply Voltage I F = 0mA to ma T A = C R G = 0Ω C G = 0nF Duty Cycle = 0% Frequency = 0kHz t PHL t PLH V DD SUPPLY VOLTAGE (V) FOD3 3A Output Current, High Speed MOSFET Gate Driver Optocoupler 00 Fairchild Semiconductor Corporation FOD3 Rev

11 Typical Performance Curves (Continued) tp PROPAGATION DELAY (ns) tp PROPAGATION DELAY (ns) Fig. 3 Propagation Delay vs. LED Forward Current V DD = V to 30V T A = C R G = 0Ω C G = 0nF Duty Cycle = 0% Frequency = 0kHz t PHL t PLH 0 0 I F FORWARD LED CURRENT (ma) Fig. Propagation Delay vs. Series Load Resistance I F = 0mA to ma V DD = V to 30V C G = 0nF Duty Cycle = 0% Frequency = 0kHz t PHL t PLH R G SERIES LOAD RESISTANCE (Ω) tp PROPAGATION DELAY (ns) tp PROPAGATION DELAY (ns) Fig. Propagation Delay vs. Ambient Temperature I F = 0mA to ma V DD = V to 30V R G = 0Ω C G = 0nF Duty Cycle = 0% Frequency = 0kHz T A AMBIENT TEMPERATURE ( C) Fig. Propagation Delay vs. Series Load Capacitance I F = 0mA to ma V DD = V to 30V R G = 0Ω Duty Cycle = 0% Frequency = 0kHz t PHL t PLH t PHL t PLH C G SERIES LOAD CAPACITANCE (nf) FOD3 3A Output Current, High Speed MOSFET Gate Driver Optocoupler VO OUTPUT VOLTAGE (V) V DD = 30V T A = C Fig. 7 Transfer Characteristics IF FORWARE CURRENT (ma) Fig. Input Forward Current vs. Forward Voltage T A =00 C C -0 C I F FORWARD LED CURRENT (ma) V R FORWARE VOLTAGE (V) 00 Fairchild Semiconductor Corporation FOD3 Rev

12 Typical Performance Curves (Continued) VO OUTPUT VOLTAGE (V) Fig. 9 Under Voltage Lockout 0 0 (.30V) (7.0) (V DD V SS ) SUPPLY VOLTAGE (V) FOD3 3A Output Current, High Speed MOSFET Gate Driver Optocoupler 00 Fairchild Semiconductor Corporation FOD3 Rev..0.9

13 Test Circuit Pulse Generator PW =.99ms Period = ms R OUT = 0Ω Test Conditions: Frequency = 00Hz Duty Cycle = 99.% V DD = 0V to 30V V SS = 0V V F(OFF) = -3.0V to 0.V Pulse Generator PW = 0µs Period = ms R OUT = 0Ω Pulse-In LED-IFmon Pulse-In LED-IFmon R 00Ω R 00Ω R 00Ω R 00Ω 3 3 Figure 0. I OL Test Circuit 7 7 V OL V OH Ioh C 0.µF Iol D C 0.µF D Current Probe C 7µF C3 0.µF To Scope C 7µF C3 0.µF To Scope C 7µF C 7µF Power Supply V DD = 0V to 30V Power Supply V = V Power Supply V DD = 0V to 30V Power Supply V = V FOD3 3A Output Current, High Speed MOSFET Gate Driver Optocoupler Test Conditions: Frequency = 00Hz Duty Cycle = 0.% V DD = 0V to 30V V SS = 0V I F = 0mA to ma Figure. I OH Test Circuit 00 Fairchild Semiconductor Corporation FOD3 Rev..0.9

14 Test Circuit (Continued) I F = 0 to ma µF V O 00mA Figure. V OH Test Circuit 7 0.µF Figure 3. V OL Test Circuit 00mA V O V DD = 0 to 30V V DD = 0 to 30V FOD3 3A Output Current, High Speed MOSFET Gate Driver Optocoupler 00 Fairchild Semiconductor Corporation FOD3 Rev

15 Test Circuit (Continued) I F = 0 to ma V F = -0.3 to 0.V µF Figure. I DDH Test Circuit 7 0.µF Figure. I DDL Test Circuit V O V O V DD = 30V V DD = 30V FOD3 3A Output Current, High Speed MOSFET Gate Driver Optocoupler 00 Fairchild Semiconductor Corporation FOD3 Rev..0.9

16 Test Circuit (Continued) IF V F = 0.3 to 0.V I F = 0mA µF V O > V Figure. I FLH Test Circuit 7 0.µF Figure 7. V FHL Test Circuit V O 7 0.µF V O = V V DD = 0 to 30V V DD = 0 to 30V 0V or 30V V DD Ramp FOD3 3A Output Current, High Speed MOSFET Gate Driver Optocoupler Figure. UVLO Test Circuit 00 Fairchild Semiconductor Corporation FOD3 Rev..0.9

17 Test Circuit (Continued) F = 0kHz DC = 0% V Probe I F V OUT I F 0Ω t PLH Figure 9. t PHL, t PLH, t r and t f Test Circuit and Waveforms A B 3 3 t r 7 7 t PHL 0.µF t f 0.µF V O Rg = 0Ω Cg = 0nF 90% 0% 0% V O V DD = 0 to 30V V DD = 30V FOD3 3A Output Current, High Speed MOSFET Gate Driver Optocoupler V CM =,000V V CM 0V t V O V OH Switch at A: I F = 0mA V O V OL Switch at B: I F = 0mA Figure 30. CMR Test Circuit and Waveforms 00 Fairchild Semiconductor Corporation FOD3 Rev..0.9

18 Ordering Information Part Number Package Packing Method FOD3 DIP -Pin Tube (0 units per tube) FOD3S SMT -Pin (Lead Bend) Tube (0 units per tube) FOD3SD SMT -Pin (Lead Bend) Tape and Reel (,000 units per reel) FOD3V DIP -Pin, IEC077-- option Tube (0 units per tube) FOD3SV SMT -Pin (Lead Bend), DIN EN/IEC option Tube (0 units per tube) FOD3SDV SMT -Pin (Lead Bend), DIN EN/IEC option Tape and Reel (,000 units per reel) FOD3TV DIP -Pin, 0. Lead Spacing, DIN EN/IEC option Tube (0 units per tube) FOD3TSV SMT -Pin, 0. Lead Spacing, DIN EN/IEC option Tube (0 units per tube) FOD3TSR SMT -Pin, 0. Lead Spacing Tape and Reel (700 units per reel) FOD3TSRV SMT -Pin, 0. Lead Spacing, DIN EN/IEC option Tape and Reel (700 units per reel) Marking Information V XX 3 YY 3 B FOD3 3A Output Current, High Speed MOSFET Gate Driver Optocoupler Definitions Fairchild logo Device number 3 VDE mark (Note: Only appears on parts ordered with DIN EN/IEC option See order entry table) Two digit year code, e.g., Two digit work week ranging from 0 to 3 Assembly package code 00 Fairchild Semiconductor Corporation FOD3 Rev

19 Carrier Tape Specifications Option S D 0 P 0 P t K E 0 F A 0 W W B 0 d User Direction of Feed P D Symbol Description Dimension in mm W Tape Width.0 ± 0.3 t Tape Thickness 0.30 ± 0.0 P 0 Sprocket Hole Pitch.0 ± 0. D 0 Sprocket Hole Diameter. ± 0.0 E Sprocket Hole Location.7 ± 0.0 F Pocket Location 7. ± 0. P.0 ± 0. P Pocket Pitch.0 ± 0. A 0 Pocket Dimensions 0.30 ±0.0 B ±0.0 K 0.90 ±0.0 W Cover Tape Width 3. ± 0. d Cover Tape Thickness 0. max Max. Component Rotation or Tilt 0 R Min. Bending Radius 30 FOD3 3A Output Current, High Speed MOSFET Gate Driver Optocoupler 00 Fairchild Semiconductor Corporation FOD3 Rev..0.9

20 Carrier Tape Specifications Option TS D 0 P 0 P t K E 0 F A 0 W W B 0 d User Direction of Feed P D Symbol Description Dimension in mm W Tape Width.0 ± 0.3 t Tape Thickness 0.0 ± 0. P 0 Sprocket Hole Pitch.0 ± 0. D 0 Sprocket Hole Diameter. ± 0.0 E Sprocket Hole Location.7 ± 0.0 F Pocket Location. ± 0. P.0 ± 0. P Pocket Pitch.0 ± 0. A 0 Pocket Dimensions.0 ± 0. B ± 0. K 0.7 ±0. W Cover Tape Width.0 ± 0. d Cover Tape Thickness 0. max Max. Component Rotation or Tilt 0 R Min. Bending Radius 30 FOD3 3A Output Current, High Speed MOSFET Gate Driver Optocoupler 00 Fairchild Semiconductor Corporation FOD3 Rev

21 Reflow Profile Temperature ( C) TP TL Profile Freature Pb-Free Assembly Profile Temperature Min. (Tsmin) 0 C Temperature Max. (Tsmax) 00 C Time (t S ) from (Tsmin to Tsmax) Ramp-up Rate (t L to t P ) Tsmax Preheat Area Tsmin 0 0 seconds 3 C/second max. Liquidous Temperature (T L ) 7 C Time (t L ) Maintained Above (T L ) Peak Body Package Temperature Time (t P ) within C of 0 C Ramp-down Rate (T P to T L ) Max. Ramp-up Rate = 3 C/S Max. Ramp-down Rate = C/S 0 ts Time C to Peak Time (seconds) tl 0 0 seconds 0 C 0 C / C 30 seconds C/second max. tp 0 30 FOD3 3A Output Current, High Speed MOSFET Gate Driver Optocoupler Time C to Peak Temperature minutes max. 00 Fairchild Semiconductor Corporation FOD3 Rev

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26 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 9 E. 3nd Pkwy, Aurora, Colorado 00 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com Semiconductor Components Industries, LLC N. American Technical Support: 00 9 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative

27 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Fairchild Semiconductor: FOD3TSR