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1 Is Now Part of To learn more about ON Semiconductor, please visit our website at ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

2 FOD0 High Noise Immunity,. A Output Current, Gate Drive Optocoupler Features High Noise Immunity Characterized by kv/μs Minimum Common Mode Rejection. A Peak Output Current Driving Capability for Most 00 V/0 A IGBT Use of P-channel MOSFETs at Output Stage Enables Output Voltage Swing Close to The Supply Rail Wide Supply Voltage Range from V to 0 V Fast Switching Speed 00 ns max. Propagation Delay 00 ns max. Pulse Width Distortion Under Voltage LockOut (UVLO) with Hysteresis Extended Industrial Temperate Range, -0 C to 00 C Temperature Range Safety and Regulatory Approved UL77, 000 V RMS for min. DIN EN/IEC077-- R DS(ON) of Ω (typ.) Offers Lower Power Dissipation >.0 mm Clearance and Creepage Distance (Option T or TS ), V Peak Working Insulation Voltage (V IORM ) Applications Industrial Inverter Uninterruptible Power Supply Induction Heating Isolated IGBT/Power MOSFET Gate Drive Description February 0 The FOD0 is a. A Output Current Gate Drive Optocoupler, capable of driving most medium power IGBT/MOSFET. It is ideally suited for fast switching driving of power IGBT and MOSFETs used in motor control inverter applications, and high performance power system. It utilizes Fairchild s coplanar packaging technology, Optoplanar, and optimized IC design to achieve high noise immunity, characterized by high common mode rejection. It consists of a gallium aluminum arsenide (AlGaAs) light emitting diode optically coupled to an integrated circuit with a high-speed driver for push-pull MOSFET output stage. Related Resources FOD0, A Output Current, Gate Drive Optocoupler Datasheet FOD0 High Noise Immunity,. A Output Current, Gate Drive Optocoupler Functional Block Diagram Package Outlines NC V DD ANODE 7 V O CATHODE V O NC Figure. Functional Block Diagram () Note:. 0. μf bypass capacitor must be connected between pins and. V SS Figure. Package Outlines FOD0 Rev..

3 Truth Table LED Pin Definitions V DD V SS Positive Going (Turn-on) V DD V SS Negative Going (Turn-off) Off 0 V to 0 V 0 V to 0 V Low On 0 V to. V 0 V to 0 V Low On. V to. V 0 V to V Transition On. V to 0 V V to 0 V High Pin # Name Description NC Not Connected Anode LED Anode Cathode LED Cathode NC Not Connected V SS Negative Supply Voltage V O Output Voltage (internally connected to V O ) 7 V O Output Voltage V DD Positive Supply Voltage V O FOD0 High Noise Immunity,. A Output Current, Gate Drive Optocoupler FOD0 Rev..

4 Safety and Insulation Ratings As per DIN EN/IEC 077--, this optocoupler is suitable for safe electrical insulation only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Parameter Note:. Safety limit value - maximum values allowed in the event of a failure. Characteristics < 0 V RMS I IV < 00 V RMS I IV Installation Classifications per DIN VDE 00/.9 Table, For Rated Mains Voltage < 0 V RMS I III < 00 V RMS I III < 000 V RMS (Option T, TS) I III Climatic Classification 0/00/ Pollution Degree (DIN VDE 00/.9) Comparative Tracking Index 7 Symbol Parameter Value Unit Input-to-Output Test Voltage, Method A, V IORM x. = V PR, Type and Sample Test with t m = 0 s, Partial Discharge < pc, V peak V PR Input-to-Output Test Voltage, Method B, V IORM x.7 = V PR, 00% Production Test with t m = s, Partial Discharge < pc, V peak V IORM Maximum Working Insulation Voltage, V peak V IOTM Highest Allowable Over-Voltage,000 V peak External Creepage.0 mm External Clearance 7. mm External Clearance (for Option T or TS, 0." Lead Spacing) 0. mm DTI Distance Through Insulation (Insulation Thickness) 0. mm T S Case Temperature () 7 C I S,INPUT Input Current () 00 ma P S,OUTPUT Output Power (Duty Factor.7%) () 700 mw R IO Insulation Resistance at T S, V IO = 00 V () > 0 9 Ω FOD0 High Noise Immunity,. A Output Current, Gate Drive Optocoupler FOD0 Rev..

5 Absolute Maximum Ratings (T A = ºC unless otherwise specified) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Parameter Value Unit T STG Storage Temperature - to + ºC T OPR Operating Temperature -0 to +00 ºC T J Junction Temperature -0 to + ºC T SOL Lead Wave Solder Temperature (refer to page for reflow solder profile) 0 for 0sec ºC I F(AVG) Average Input Current ma I F(PEAK) Peak Transient Forward Current () A f Operating Frequency () 0 khz V R Reverse Input Voltage V I O(PEAK) Peak Output Current ().0 A V DD V SS Supply Voltage 0 to T A 90 C 0 to 0 V V O(PEAK) Peak Output Voltage 0 to V DD V t R(IN), t F(IN) Input Signal Rise and Fall Time 00 ns PD I Input Power Dissipation ()() mw PD O Output Power Dissipation (7)() 0 mw Notes:. Pulse Width, P W μs, 00 pps. Exponential Waveform, I O(PEAK). A ( 0. μs). Maximum pulse width = 0 μs, maximum duty cycle =.%. Derate linearly above 7 C, free air temperature at a rate of 0.77 mw/ C 7. No derating required across temperature range.. Functional operation under these conditions is not implied. Permanent damage may occur if the device is subjected to conditions outside these ratings. FOD0 High Noise Immunity,. A Output Current, Gate Drive Optocoupler Recommended Operating Conditions The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not recommend exceeding them or designing to absolute maximum ratings. Symbol Parameter Value Unit T A Ambient Operating Temperature -0 to +00 C V DD V SS Power Supply to 0 V I F(ON) Input Current (ON) 7 to ma V F(OFF) Input Voltage (OFF) 0 to 0. V FOD0 Rev..

6 Isolation Characteristics Apply over all recommended conditions, typical value is measured at T A = ºC Symbol Parameter Conditions Min. Typ. Max. Unit V ISO Input-Output Isolation Voltage Notes: 9. Device is considered a two terminal device: Pins and are shorted together and Pins,, 7 and are shorted together. 0.,000 V RMS for minute duration is equivalent to,000 VAC RMS for second duration. Electrical Characteristics T A = ºC, R.H.< 0%, t =.0min,,000 V RMS I I-O 0 μa, 0 Hz (9)(0) R ISO Isolation Resistance V I-O = 00 V (9) 0 Ω C ISO Isolation Capacitance V I-O = 0 V, Freq =.0 MHz (9) pf Apply over all recommended conditions, typical value is measured at V DD = 0 V, V SS = Ground, T A = C unless otherwise specified. Symbol Parameter Conditions Min. Typ. Max. Unit V F Input Forward Voltage I F = 0 ma... V Δ(V F / T A ) Temperature Coefficient of Forward Voltage -. mv/ºc BV R Input Reverse Breakdown Voltage I R = 0 μa V C IN Input Capacitance f = MHz, V F = 0V 0 pf I OH High Level Output V O = V DD V Current () V O = V DD V A I OL Low Level Output V O = V SS + V.0.0. Current () V O = V SS + V.0. A V OH High Level Output Voltage I F = 0 ma, I O = -. A V DD. V V DD. V I F = 0 ma, I O = -00 ma V DD 0. V V DD 0. V V V OL Low Level Output Voltage I F = 0 ma, I O =. A V SS +. V V SS +. V I F = 0 ma, I O = 00 ma V SS + 0. V V SS + 0. V V I DDH High Level Supply Current V O = Open, I F = 7 to ma.. ma I DDL Low Level Supply Current V O = Open, V F = 0 to 0. V.. ma I FLH Threshold Input Current Low to High I O = 0 ma, V O > V..0 ma V FHL Threshold Input Voltage High to Low I O = 0 ma, V O < V 0. V V UVLO+ Under Voltage Lockout I F = 0 ma, V O > V..7. V V UVLO Threshold I F = 0 ma, V O < V V UVLO HYS Under Voltage Lockout Threshold Hysteresis. V FOD0 High Noise Immunity,. A Output Current, Gate Drive Optocoupler FOD0 Rev..

7 Switching Characteristics Apply over all recommended conditions, typical value is measured at V DD = 0 V, V SS = Ground, T A = C unless otherwise specified. Symbol Parameter Conditions Min. Typ. Max. Unit t PHL t PLH PWD Propagation Delay Time to Logic Low Output Propagation Delay Time to Logic High Output Pulse Width Distortion, t PHL t PLH I F = 7 ma to ma, Rg = 0 Ω, Cg =0 nf, f = 0 khz, Duty Cycle = 0% ns 0 00 ns Notes:. The difference between t PHL and t PLH between any two FOD0 parts under same test conditions ns Propagation Delay Difference PDD Between Any Two Parts or (Skew) Channels, (t PHL t PLH ) () -0 0 ns t R Output Rise Time (0% 90%) 0 ns t F Output Fall Time (90% 0%) 0 ns t UVLO ON UVLO Turn On Delay I F = 0 ma, V O > V. μs t UVLO OFF UVLO Turn Off Delay I F = 0 ma, V O < V 0. μs CM H CM L Common Mode Transient Immunity at Output High Common Mode Transient Immunity at Output Low T A = C, V DD = 0 V, I F = 7 to ma, V CM = 000 V () 0 kv/μs T A = C, V DD = 0 V, V F = 0 V, V CM = 000 V () 0 kv/μs. Common mode transient immunity at output high is the maximum tolerable negative dvcm/dt on the trailing edge of the common mode impulse signal, Vcm, to assure that the output will remain high (i.e. V O >.0 V).. Common mode transient immunity at output low is the maximum tolerable positive dvcm/dt on the leading edge of the common pulse signal, Vcm, to assure that the output will remain low (i.e. V O <.0 V). FOD0 High Noise Immunity,. A Output Current, Gate Drive Optocoupler FOD0 Rev..

8 Typical Performance Characteristics (V OH -V DD ) - OUTPUT HIGH VOLTAGE DROP (V) I OH OUTPUT HIGH CURRENT (A) f = 00 Hz DUTY CYCLE = 0.% I F = 7 to ma R g =Ω to GND T A = C V DD = 0V V DD = V T A =-0 C T A =00 C I OH - OUTPUT HIGH CURRENT (A) Frequency = 0Hz Duty Cycle = 0.% I F = 7 to ma V DD =to0v V SS =0V Fig. Output High Voltage Drop vs. Output High Current T A AMBIENT TEMPERATURE ( C) Fig. Output High Current vs. Ambient Temperature (V OH -V DD ) - HIGH OUTPUT VOLTAGE DROP (V) V DD = V to 0V V SS =0V I F = 7mA to ma I O = -00mA I OH OUTPUT HIGH CURRENT (A) f=00hz DUTY CYCLE = 0.% I F = 7 t o ma R g =0Ω to GND T A - AMBIENT TEMPERATURE ( C) Fig. Output High Voltage Drop vs. Ambient Temperature V DD = 0V V DD = V T A AMBIENT TEMPERATURE ( C) Fig. Output High Current vs. Ambient Temperature FOD0 High Noise Immunity,. A Output Current, Gate Drive Optocoupler V OL - OUTPUT LOW VOLTAGE (V) Frequency = 0Hz Duty Cycle = 99.9% V F(OFF) = -.0V to 0.V V DD = V to 0V V SS =0V T A = C T A = 00 C T A =-0 C V OL - OUTPUT LOW VOLTAGE (V) V DD =Vto0V V SS =0V V F(OFF) =-Vto0.V I O = 00mA I OL - OUTPUT LOW CURRENT (A) Fig. 7 Output Low Voltage vs. Output Low Current T A -AMBIENTTEMPERATURE( C) Fig. Output Low Voltage vs. Ambient Temperature FOD0 Rev.. 7

9 Typical Performance Characteristics (Continued) I DD - SUPPLY CURRENT (ma) I OL OUTPUT LOW CURRENT (A) f=00hz D UTY CYCLE = 99.% I F = 7 to ma R g =Ω to V DD V DD =0V V SS =0V I F =0mA(forI DDL ) I F =0mA(forI DDH ) V DD =0V V DD =V T AMBIENT TEMPERATURE ( C) Fig. 9 Output Low Current vs. Ambient Temperature I DDH I DDL T A - AMBIENT TEMPEATURE ( C) Fig. Supply Current vs. Ambient Temperature I OL OUTPUT LOW CURRENT (A) I DD - SUPPLY CURRENT (ma) f=00hz DUTY CYCLE = 99.% I F =7tomA R g =0Ω to V DD I F =0mA(forI DDH ) I F =0mA(forI DDL ) V SS =0,T A = C V DD = 0V V DD = V T A AMBIENT TEMPERATURE ( C) Fig. 0 Output Low Current vs. Ambient Temperature I DDH I DDL V-SUPPLYVOLTAGE(V) Fig. Supply Current vs. Supply Voltage FOD0 High Noise Immunity,. A Output Current, Gate Drive Optocoupler I FLH - LOW TO HIGH CURRENT THRESHOLD (ma) V DD = V to 0V V SS =0V Output = Open T A - AMBIENT TEMPERATURE ( C) Fig. Low to High Input Current Threshold vs. Ambient Temperature t P - PROPAGATOIN DELAY (ns) I F = 0mA T A = C Rg = 0Ω, Cg = 0nF DUTY CYCLE = 0% f=0khz tphl t PLH V DD SUPPLY VOLTAGE (V) Fig. Propagation Delay vs. Supply Voltage FOD0 Rev..

10 Typical Performance Characteristics (Continued) t P PROPOGATION DELAY (ns) t P PROPOGATION DELAY (ns) V DD =0V,V SS =0V Rg = 0Ω, Cg = 0nF T A = C DUTY CYCLE = 0% f=0khz 00 0 I F FORWARD LED CURRENT (ma) Fig. Propagation Delay vs. LED Forward Current I F = 0mA V DD = 0V, V SS =0V Cg = 0nF T A = C DUTY CYCLE = 0% f=0khz t PHL t PLH t PHL t PLH R g -SERIESLOAD RESISTANCE (Ω) Fig. 7 Propagation Delay vs. Sereies Load Resistance T A = C V DD = 0V t P PROPOGATION DELAY (ns) t P PROPOGATION DELAY (ns) I F = 0mA V DD = 0V, V SS =0V Rg = 0Ω, Cg = 0nF DUTY CYCLE = 0% f=0khz t PHL t PLH I F = 0mA V DD =0V,V SS =0V Rg = 0Ω T A = C 00 DUTY CYCLE = 0% f=0khz T A AMBIENT TEMPERATURE ( C) t PHL t PLH C g -LOAD CAPACITANCE (nf) 00 Fig. Propagation Delay vs. Ambient Temperature Fig. Propagation Delay vs. Load Capacitance FOD0 High Noise Immunity,. A Output Current, Gate Drive Optocoupler 0 V O OUTPUT VOLTAGE (V) 0 0 I F -FORWARD CURRENT (ma) T A =00 C T A =-0 C T A = C 0 0 I F FOR WA RD LE D CURR EN T ( ma ) Fig. 9 Transfer Characteristics V F -FORWARD VOLTAGE (V) Fig. 0 Input Forward Current vs. Forward Voltage FOD0 Rev.. 9

11 Typical Performance Characteristics (Continued) V O OUTPUTVOLTAGE (V) (.7,.0) (.,.0) 0 (.0,0.00) (.70, 0.00) (V DD -V SS ) SUPPLYVOLTAGE (V) Fig. Under Voltage Lockout FOD0 High Noise Immunity,. A Output Current, Gate Drive Optocoupler FOD0 Rev.. 0

12 Test Circuit Pulse Generator PW =.99 ms Period = ms R OUT = 0 Ω Test Conditions: Frequency = 00 Hz Duty Cycle = 99.% V DD = V to 0 V V SS = 0 V V F(OFF) = -.0 V to 0. V Pulse Generator PW = 0 μs Period = ms R OUT = 0 Ω Pulse-In LED-IFmon Pulse-In LED-IFmon R 00 Ω R 00 Ω R 00 Ω R 00 Ω Figure. I OL Test Circuit 7 7 V OL V OH Ioh C 0. μf Iol D C 0. μf D Current Probe + + C 7 μf C 0. μf + To Scope C 7 μf C 0. μf + To Scope C 7 μf C 7 μf Power Supply V DD = V to 0 V Power Supply V = V Power Supply V DD = V to 0 V Power Supply V = V FOD0 High Noise Immunity,. A Output Current, Gate Drive Optocoupler Test Conditions: Frequency = 00 Hz Duty Cycle = 0.% V DD = V to 0 V V SS = 0 V I F = 7 ma to ma Figure. I OH Test Circuit FOD0 Rev..

13 Test Circuit (Continued) I F = 7 to ma 7 0. μf V O 00 ma Figure. V OH Test Circuit 7 0. μf Figure. V OL Test Circuit 00 ma V O + V DD = to 0 V + V DD = to 0 V FOD0 High Noise Immunity,. A Output Current, Gate Drive Optocoupler FOD0 Rev..

14 Test Circuit (Continued) + I F = 7 to ma V F = -0. to 0. V 7 0. μf Figure. I DDH Test Circuit 7 0. μf Figure 7. I DDL Test Circuit V O V O + V DD = 0 V + V DD = 0 V FOD0 High Noise Immunity,. A Output Current, Gate Drive Optocoupler FOD0 Rev..

15 Test Circuit (Continued) IF + V F = 0. to 0. V I F = 0 ma 7 0. μf V O > V Figure. I FLH Test Circuit 7 0. μf Figure 9. V FHL Test Circuit V O 7 0. μf V O = V + V DD = to 0 V + V DD = to 0 V + V or 0 V V DD Ramp FOD0 High Noise Immunity,. A Output Current, Gate Drive Optocoupler Figure 0. UVLO Test Circuit FOD0 Rev..

16 Test Circuit (Continued) F = 0 khz DC = 0% + V + Probe I F V OUT Figure. t PHL, t PLH, t R and t F Test Circuit and Waveforms I F 0 Ω A B t PLH t r 7 7 t PHL 0. μf t f 0. μf V O Rg = 0 Ω Cg = 0 nf 90% 0% 0% V O + + V DD = to 0 V V DD = 0 V FOD0 High Noise Immunity,. A Output Current, Gate Drive Optocoupler + V CM =,000 V V CM 0V Δt V O V OH Switch at A: I F = 0 ma V O V OL Switch at B: I F = 0 ma Figure. CMR Test Circuit and Waveforms FOD0 Rev..

17 Reflow Profile Temperature ( C) T P TL Tsmax Tsmin Max. Ramp-up Rate = C/S Max. Ramp-down Rate = C/S Preheat Area 0 Time C to Peak Time (seconds) Profile Freature Pb-Free Assembly Profile Temperature Min. (Tsmin) 0 C Temperature Max. (Tsmax) 00 C Time (t S ) from (Tsmin to Tsmax) 0 0 seconds Ramp-up Rate (t L to t P ) C/second max. Liquidous Temperature (T L ) 7 C Time (t L ) Maintained Above (T L ) 0 0 seconds Peak Body Package Temperature 0 C +0 C / C Time (t P ) within C of 0 C 0 seconds Ramp-down Rate (T P to T L ) C/second max. ts t L t P 0 0 FOD0 High Noise Immunity,. A Output Current, Gate Drive Optocoupler Time C to Peak Temperature minutes max. FOD0 Rev..

18 Ordering Information Part Number Package Packing Method FOD0 DIP -Pin Tube (0 units per tube) FOD0S SMT -Pin (Lead Bend) Tube (0 units per tube) FOD0SD SMT -Pin (Lead Bend) Tape and Reel (,000 units per reel) FOD0V DIP -Pin, DIN_EN/IEC077-- option Tube (0 units per tube) FOD0SV SMT -Pin (Lead Bend), DIN_EN/IEC077-- option Tube (0 units per tube) FOD0SDV SMT -Pin (Lead Bend), DIN_EN/IEC077-- option Tape and Reel (,000 units per reel) FOD0TV DIP -Pin, 0. Lead Spacing, DIN_EN/IEC077-- option Tube (0 units per tube) FOD0TSV SMT -Pin, 0. Lead Spacing, DIN_EN/IEC077-- option Tube (0 units per tube) FOD0TSRV SMT -Pin, 0. Lead Spacing, DIN_EN/IEC077-- option Tape and Reel (700 units per reel) Marking Information Definitions V XX 0 YY Figure. Top Mark Fairchild logo Device number DIN_EN/IEC077-- Option (only appears on component ordered with this option) Two digit year code, e.g., Two digit work week ranging from 0 to Assembly package code B FOD0 High Noise Immunity,. A Output Current, Gate Drive Optocoupler FOD0 Rev.. 7

19 Carrier Tape Specifications (Option SD) D 0 P 0 P t K E 0 F A 0 W W B 0 d User Direction of Feed P D Symbol Description Dimension in mm W Tape Width.0 ± 0. t Tape Thickness 0.0 ± 0.0 P 0 Sprocket Hole Pitch.0 ± 0. D 0 Sprocket Hole Diameter. ± 0.0 E Sprocket Hole Location.7 ± 0.0 F Pocket Location 7. ± 0. P.0 ± 0. P Pocket Pitch.0 ± 0. A 0 Pocket Dimensions 0.0 ±0.0 B ±0.0 K 0.90 ±0.0 W Cover Tape Width. ± 0. d Cover Tape Thickness 0. max Max. Component Rotation or Tilt 0 R Min. Bending Radius 0 FOD0 High Noise Immunity,. A Output Current, Gate Drive Optocoupler FOD0 Rev..

20 Carrier Tape Specifications (Option TSR) D 0 P 0 P t K E 0 F A 0 W W B 0 d User Direction of Feed P D Symbol Description Dimension in mm W Tape Width.0 ± 0. t Tape Thickness 0.0 ± 0. P 0 Sprocket Hole Pitch.0 ± 0. D 0 Sprocket Hole Diameter. ± 0.0 E Sprocket Hole Location.7 ± 0.0 F Pocket Location. ± 0. P.0 ± 0. P Pocket Pitch.0 ± 0. A 0 Pocket Dimensions.0 ± 0. B 0 0. ± 0. K 0.7 ±0. W Cover Tape Width.0 ± 0. d Cover Tape Thickness 0. max Max. Component Rotation or Tilt 0 R Min. Bending Radius 0 FOD0 High Noise Immunity,. A Output Current, Gate Drive Optocoupler FOD0 Rev.. 9

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25 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 9 E. nd Pkwy, Aurora, Colorado 00 USA Phone: or 00 0 Toll Free USA/Canada Fax: or 00 7 Toll Free USA/Canada orderlit@onsemi.com Semiconductor Components Industries, LLC N. American Technical Support: 00 9 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative

26 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Fairchild Semiconductor: FOD0TSR