FOD3125 High Temperature, 2.5 A Output Current, Gate Drive Optocoupler

Transcription

1 High Temperature,. A Output Current, Gate Drive Optocoupler Description The is a. A Output Current Gate Drive Optocoupler, capable of driving most medium IGBTs or MOSFETs across extended industrial temperature range, 0 C to C. It is ideally suited for fast switching driving of power IGBTs and MOSFETs used in motor control inverter applications, and high performance power system. It utilizes ON Semiconductor patented coplanar packaging technology, Optoplanar, and optimized IC design to achieve high noise immunity, characterized by high common mode rejection. It consists of a gallium aluminum arsenide (AlGaAs) light emitting diode optically coupled to an integrated circuit with a high speed driver for push pull MOSFET output stage. Features Extended Industrial Temperate Range, 0 C to C High Noise Immunity characterized by kv/ s minimum Common Mode Rejection. A Peak Output Current Driving Capability for Most 00 V/ 0 A IGBT Use of P channel MOSFETs at Output Stage Enables Output Voltage Swing close to the Supply Rail Wide Supply Voltage Range from V to 0 V Fast Switching Speed 00 ns maximum Propagation Delay 00 ns maximum Pulse Width Distortion Under Voltage LockOut (UVLO) with Hysteresis Safety and Regulatory Approvals UL, 000 V RMS for minute DIN EN/IEC0 (pending approval) >.0 mm Clearance and Creepage Distance (Option T or TS ), V Peak Working Insulation Voltage (VIORM) This is a Pb Free Device Applications Industrial Inverter Uninterruptible Power Supply Induction Heating Isolated IGBT/Power MOSFET Gate Drive NC ANODE CATHODE PDIP GW CASE 09AD PDIP.x.,.P CASE BW FUNCTIONAL BLOCK DIAGRAM NC Note: A 0. F bypass capacitor must be connected between pins and. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page of this data sheet. PDIP GW CASE 09AC PDIP 9.x.,.P CASE CQ V DD V O V O V SS Table. TRUTH TABLE LED V DD V SS Positive Going (Turn on) V DD V SS Negative Going (Turn off) V O Off 0 V to 0 V 0 V to 0 V Low On 0 V to V 0 V to 9. V Low On V to V 9. V to. V Transition On V to 0 V. V to 0 V High Semiconductor Components Industries, LLC, 0 February, 09 Rev. Publication Order Number: /D

2 Table. PIN DEFINITIONS Pin # Name Description NC Not Connected Anode LED Anode Cathode LED Cathode NC Not Connected VSS Negative Supply Voltage VO Output Voltage (internally connected to V O ) VO Output Voltage VDD Positive Supply Voltage Table. SAFETY AND INSULATION RATINGS As per IEC 0 (pending approval). This optocoupler is suitable for safe electrical insulation only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Symbol Parameter Min. Typ. Max. Unit Installation Classifications per DIN VDE 00/.9 Table For Rated Main Voltage < 0 Vrms IIV For Rated Main Voltage < 00 Vrms For Rated Main Voltage < 0 Vrms For Rated Main Voltage < 00 Vrms For Rated Main Voltage < 000 Vrms (option T, TS) Climatic Classification 0/00/ Pollution Degree (DIN VDE 00/.9) CTI Comparative Tracking Index V PR Input to Output Test Voltage, Method b, V IORM x. = V PR, 00% Production Test with tm = second, Partial Discharge < pc Input to Output Test Voltage, Method a, V IORM x. = V PR, Type and Sample Test with tm = 0 second, Partial Discharge < pc V IORM Max Working Insulation Voltage Vpeak V IOTM Highest Allowable Over Voltage 000 Vpeak External Creepage mm External Clearance. mm External Clearance (for Option T or TS, 0. Lead Spacing) 0. mm Insulation Thickness 0. mm T Case Case Temperature Maximum Values Allowed in the Event of a Failure C I S,INPUT Input Current Maximum Values Allowed in the Event of a Failure 00 ma P S,OUTPUT R IO Output Power (Duty Factor. %) Maximum Values Allowed in the Event of a Failure Insulation Resistance at T S, V IO = 00 V Maximum Values Allowed in the Event of a Failure IIV IIII IIII IIII 00 mw > 0 9

3 Table. ABSOLUTE MAXIMUM RATINGS (T A = C unless otherwise specified.) Symbol Parameter Value Units T STG Storage Temperature to C T OPR Operating Temperature 0 to C T J Junction Temperature 0 to C T SOL Lead Wave Solder Temperature (refer to page for reflow solder profile) 0 for 0 sec C I F(AVG) Average Input Current ma f Operating Frequency () 0 khz V R Reverse Input Voltage V I O(PEAK) Peak Output Current () A V DD V SS Supply Voltage 0 to V T A 90 C 0 to 0 V O(PEAK) Peak Output Voltage 0 to V DD V t R(IN), t F(IN) Input Signal Rise and Fall Time 00 ns PD I Input Power Dissipation () () mw PD O Output Power Dissipation () () 0 mw Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.. Exponential Waveform, I O(PEAK). A 0. s. Maximum pulse width = 0 s, maximum duty cycle =. %.. Derate linearly above C, free air temperature at a rate of 0. mw/ C.. Derate linearly above 00 C, free air temperature at a rate of. mw/ C.. Functional operation under these conditions is not implied. Permanent damage may occur if the device is subjected to conditions outside these ratings. Table. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Value Units T A Ambient Operating Temperature 0 to C V DD V SS Power Supply to 0 V I F(ON) Input Current (ON) to ma V F(OFF) Input Voltage (OFF) 0 to 0. V Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. Table. ISOLATION CHARACTERISTICS Apply over all recommended conditions, typical value is measured at T A = C Symbol Parameter Conditions Min. Typ. Max. Units V ISO Input Output Isolation Voltage T A = C, R.H.< 0 %, t =.0 minute, I I O 0 A, 0 Hz () () 000 V RMS R ISO Isolation Resistance V I O = 00 V () 0 C ISO Isolation Capacitance V I O = 0 V, Frequency =.0 MHz () pf. Device is considered a two terminal device: pins and are shorted together and pins,, and are shorted together..,000 V RMS for minute duration is equivalent to,000 VAC RMS for second duration. Table. ELECTRICAL CHARACTERISTICS Symbol Parameter Conditions Min. Typ. Max. Units V F Input Forward Voltage I F = 0 ma... V (V F / T A ) Temperature Coefficient of Forward Voltage. mv/ C BV R Input Reverse Breakdown Voltage I R = 0 A V

4 Table. ELECTRICAL CHARACTERISTICS (continued) Symbol Parameter Conditions Min. Typ. Max. Units CIN Input Capacitance f = MHz, V F = 0 V 0 pf IOH High Level Output Current () V O = V DD V.0.0 A V O = V DD V.0 IOL Low Level Output Current () V O = V SS V.0.0 A V O = V SS V.0 VOH High Level Output Voltage I F = 0 ma, I O =. A V DD. V V DD. V V I F = 0 ma, I O = 00 ma V DD 0. V V DD 0. V VOL Low Level Output Voltage I F = 0 ma, I O =. A V SS. V V SS. V V I F = 0 ma, I O = 00 ma V SS 0. V V SS 0. V IDDH High Level Supply Current V O = Open, I F = to ma.. ma IDDL Low Level Supply Current V O = Open, V F = 0 to 0. V.. ma IFLH Threshold Input Current Low to High I O = 0 ma, V O > V..0 ma VFHL Threshold Input Voltage High to Low I O = 0 ma, V O < V 0. V VUVLO Under Voltage Lockout Threshold I F = 0mA, V O > V. V VUVLO I F = 0 ma, V O < V 9... V UVLOHYS Under Voltage Lockout Threshold Hysteresis. V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.. Maximum pulse width = 0 s, maximum duty cycle =. %. Table. SWITCHING CHARACTERISTICS Apply over all recommended conditions, typical value is measured at V DD = 0 V, V SS = Ground, T A = C unless otherwise specified. Symbol Parameter Conditions Min. Typ. Max. Units tphl Propagation Delay Time to Logic Low Output I F = ma to ma, 0 00 ns tplh Propagation Delay Time to Logic High Output Rg = 0, Cg = 0 nf, f = 0 khz, Duty Cycle = 0 % 0 00 ns PWD Pulse Width Distortion, tphl tplh 0 00 ns PDD (Skew) Propagation Delay Difference Between Any 0 0 ns Two Parts or Channels, (t PHL t PLH ) (9) t r Output Rise Time (0% 90%) 0 ns t f Output Fall Time (90% 0%) 0 ns tuvlo ON UVLO Turn On Delay I F = 0 ma, V O > V. s tuvlo OFF UVLO Turn Off Delay I F = 0 ma, V O < V 0. s CM H Common Mode Transient Immunity at Output High T A = C, V DD = 0 V, 0 kv/ s I F = to ma, V CM = 000 V (0) CM L Common Mode Transient Immunity at Output Low T A = C, V DD = 0 V, V F = 0 V, 0 kv/ s V CM = 000 V () 9. The difference between t PHL and t PLH between any two parts under same test conditions. 0. Common mode transient immunity at output high is the maximum tolerable negative dvcm/dt on the trailing edge of the common mode impulse signal, Vcm, to assure that the output will remain high (i.e., V O >.0 V).. Common mode transient immunity at output low is the maximum tolerable positive dvcm/dt on the leading edge of the common pulse signal, Vcm, to assure that the output will remain low (i.e., V O <.0 V).

5 TYPICAL PERFORMANCE CURVES (V OH V DD ) - OUTPUT HIGH VOLTAGE DROP (V) T A = 0 o C T A = o C Frequency = 0 Hz,.0 Duty Cycle = 0.% I F = ma to ma. V DD = V to 0 V V T A = o C SS = 0 V I OH OUTPUT HIGH CURRENT (A) Figure. Output High Voltage Drop vs. Output High Current (V OH V DD ) - HIGH OUTPUT VOLTAGE DROP (V) V DD = V to 0 V 0. V SS = 0V I F = ma to ma I O = 00 ma T A AMBIENT TEMPERATURE ( o C) Figure. Output High Voltage Drop vs. Ambient Temperature I OH - OUTPUT HIGH CURRENT (A) f = 00 Hz Duty Cycle = 0.% V DD V SS = V to 0 V I F = ma to ma V O = V DD V V O = V DD V T A AMBIENT TEMPERATURE ( o C) Figure. Output High Current vs. Ambient Temperature (V OL V SS ) - OUTPUT LOW VOLTAGE (V) Frequency = 0 Hz, Duty Cycle = 99.9% V F (off) = V to 0. V V DD = V to 0 V V SS = 0 V T A = o C T A = 0 o C o T A = C I OL OUTPUT LOW CURRENT (A) Figure. Output Low Voltage vs. Output Low Current

6 V OL - OUTPUT LOW VOLTAGE (V) 0. VDD = V to 0 V V SS = 0V 0.0 V F = V to 0. V I O = 00 ma I OL - OUTPUT LOW CURRENT (A) f = 00 Hz Duty Cycle = 99.% V DD V SS = V to 0 V I F = ma to ma V O V SS = V V O V SS = V I DD - SUPPLY CURRENT (ma ) T A AMBIENT TEMPERATURE ( o C) Figure. Output Low Voltage vs. Ambient Temperature V DD = 0 V V SS = 0V I F = 0 ma (for I DDL ) I F = 0 ma (for I DDH ) I DDH I DDL T A AMBIENT TEMPERATURE ( o C) Figure. Supply Current vs. Ambient Temperature I DD - SUPPLY CURRENT (ma ) T A AMBIENT TEMPERATURE ( o C) Figure. Output Low Current vs. Ambient Temperature I DDH I DDL. I F = 0 ma (for I DDL ) I F = 0 ma (for I DDH ) V SS = 0 V T A = C V DD SUPPLY VOLTAGE (V) Figure. Supply Current vs. Supply Voltage

7 I FLH LOW TO HIGH CURRENT THRESHOLD (ma).0 VDD = V to 0V. V SS = 0 V Output = Open t P PROPAGATION DELAY (ns) I F = 0 ma T A = C R g = 0, C g = 0 nf f = 0 KHz, Duty Cycle = 0% t PHL t PLH T A AMBIENT TEMPERATURE ( C) Figure 9. Low to High Input Current Threshold vs. Ambient Temperature 00 0 V DD SUPPLY VOLTAGE (V) Figure 0. Propagation Delay vs. Supply Voltage t P PROPAGATION DELAY (ns) 00 V DD = 0 V, V SS = 0 V R g = 0, C g = 0 nf T A = C f = 0 KHz, 00 Duty Cycle = 0% 00 t PHL t PLH t P PROPAGATION DELAY (ns) 00 I F = 0 ma V DD = 0 V, V SS = 0 V R g = 0, C g = 0 nf 00 f = 0 KHz, Duty Cycle = 0% t PHL t PLH 00 0 I F LED FORWARD CURRENT (ma) Figure. Propagation Delay vs. LED Forward Current T A AMBIENT TEMPERATURE ( C) Figure. Propagation Delay vs. Ambient Temperature t P PROPAGATION DELAY (ns) I F = 0 ma V DD = 0 V, V SS = 0 V C g = 0 nf T A = C Duty Cycle = 0% f = 0 khz t PHL t PLH t P PROPAGATION DELAY (ns) I F = 0 ma V DD = 0 V, V SS = 0 V R g = 0 T A = C Duty Cycle = 0% f = 0 khz t PHL t PLH R g SERIES LOAD RESISTANCE ( ) Figure. Propagation Delay vs. Series Load Resistance C g SERIES LOAD CAPACITANCE (nf) Figure. Propagation Delay vs. Load Capacitance

8 V O OUTPUT VOLTAGE (V) V DD = 0 V T A = C 0 0 I F FORWARD CURRENT (ma) Figure. Transfer Characteristics I F INPUT FORWARD CURRENT (ma) 00 0 T A = C 0. T A = 0 C 0.0 T A = C V F FORWARD VOLTAGE (V) Figure. Input Forward Current vs. Forward Voltage V O OUTPUT VOLTAGE (V) 0 (.0V,.0V) (.90V,.9 V) (.V, 0V) (.V,0 V) V DD V SS FORWARD VOLTAGE (V) Figure. Under Voltage Lockout

9 TEST CIRCUIT C 0. F C F Power Supply V DD = V to 0 V Pulse Generator PW =.99 ms Period = ms R OUT = 0 Pulse In LED IFmon R 00 V OL Iol D C 0. F C F Power Supply V = V R 00 To Scope Test Conditions: Frequency = 00 Hz Duty Cycle = 99. % V DD = V to 0 V VSS = 0 V VF(OFF) =.0 V to 0. V Figure. I OL Test Circuit C 0. F C F Power Supply V DD = V to 0 V Pulse Generator PW = 0 s Period = ms R OUT = 0 Pulse In LED IFmon R 00 R 00 V OH Ioh D Current Probe C 0. F To Scope C F Power Supply V = V Test Conditions: Frequency = 00 Hz Duty Cycle = 0. % V DD = V to 0 V VSS = 0 V IF = ma to ma Figure 9. I OH Test Circuit 9

10 I F = to ma 0. F V DD = to 0 V V O 00 ma Figure 0. V OH Test Circuit 0. F 00 ma V DD = to 0 V V O Figure. V OL Test Circuit I F = to ma 0. F V DD = 0 V V O Figure. I DDH Test Circuit V F = 0 to 0. V 0. F V DD = 0 V V O Figure. I DDL Test Circuit 0

11 IF 0. F V O > V V DD = to 0 V Figure. I FLH Test Circuit V F = 0 to 0. V 0. F V DD = to 0 V V O Figure. V FHL Test Circuit I F = 0 ma 0. F V O = V V or 0 V V DD Ramp Figure. UVLO Test Circuit

12 0. F F = 0 khz DC = 0 % Probe 0 V O Rg = 0 Cg = 0 nf V DD = to 0 V I F t r t f 90 % 0 % V OUT 0 % t PLH t PHL Figure. t PHL, t PLH, t R and t F Test Circuit and Waveforms I F A B 0. F V DD = 0V V V O V CM =,000 V V CM 0V t V O V OH Switch at A: I F = 0 ma V O V OL Switch at B: I F = 0 ma Figure. CMR Test Circuit and Waveforms

13 REFLOW PROFILE 00 C, 00 s Temperature (ºC) C peak Time above C, <0 sec Ramp up = 0C/sec Time (Minute) Notes: Peak reflow temperature: 0 C (package surface temperature) Time of temperature higher than C for 0 seconds or less One time soldering reflow is recommended Figure 9. Reflow Profile ORDERING INFORMATION Part Number Package Shipping DIP Pin 0 / Tube S SMT Pin (Lead Bend) 0 / Tube SD SMT Pin (Lead Bend),000 / Tape & Reel V DIP Pin, IEC0 option (pending approval) 0 / Tube SV SMT Pin (Lead Bend), DIN EN/IEC0 option (pending approval) 0 / Tube SDV SMT Pin (Lead Bend), DIN EN/IEC0 option (pending approval),000 / Tape & Reel TV DIP Pin, 0. Lead Spacing, DIN EN/IEC0 option (pending approval) 0 / Tube TSV SMT Pin, 0. Lead Spacing, DIN EN/IEC0 option (pending approval) 0 / Tube TSRV SMT Pin, 0. Lead Spacing, DIN EN/IEC0 option (pending approval),000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD0/D MARKING INFORMATION V XX YY ON B Figure 0. Device Marking Company logo Device number Definitions DIN EN/IEC0 Option (pending approval) (only appears on component ordered with this option) Two digit year code, e.g., 9 Two digit work week ranging from 0 to Assembly package code

14 CARRIER TAPE SPECIFICATIONS K 0 t P 0 P D 0 E W B 0 A 0 W F d UserDirectionofFeed P D Figure. Carrier Tape Specifications Symbol Description Dimension in mm W Tape Width.0 ± 0. t Tape Thickness 0.0 ± 0.0 P 0 Sprocket Hole Pitch.0 ± 0. D 0 Sprocket Hole Diameter. ± 0.0 E Sprocket Hole Location. ± 0.0 F Pocket Location. ± 0. P.0 ± 0. P Pocket Pitch.0 ± 0. A 0 Pocket Dimensions 0.0 ± 0.0 B ± 0.0 K 0.90 ± 0.0 W Cover Tape Width. ± 0. d Cover Tape Thickness 0. max Max. Component Rotation or Tilt 0 R Min. Bending Radius 0 OPTOPLANAR is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.

15 PACKAGE DIMENSIONS PDIP GW CASE 09AC ISSUE O

16 PACKAGE DIMENSIONS PDIP GW CASE 09AD ISSUE O

17 PACKAGE DIMENSIONS PDIP.x.,.P CASE BW ISSUE O

18 PACKAGE DIMENSIONS PDIP 9.x.,.P CASE CQ ISSUE O ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at /site/pdf/patent Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 9 E. nd Pkwy, Aurora, Colorado 00 USA Phone: 0 or 00 0 Toll Free USA/Canada Fax: 0 or 00 Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: 00 9 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative /D