FOD A Output Current, High-Speed, MOSFET/IGBT Gate Drive Optocoupler in Optoplanar Wide-Body SOP 5-Pin

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1 June 2 FOD88 2. A Output Current, High-Speed, MOSFET/IGBT Gate Drive Optocoupler in Optoplanar Wide-Body SOP -Pin Features Reliable and High-Voltage Insulation with Greater than 8 mm Creepage and Clearance Distance and. mm Internal Insulation Distance 2. A Output Current Driving Capability for Medium- Power IGBT/MOSFET P-Channel MOSFET at Output Stage Enables Output Voltage Swing Close to Supply Rail kv/µs Minimum Common Mode Rejection Wide Supply Voltage Range: V to V Fast Switching Speed Over Full Operating Temperature Range 2 ns Maximum Propagation Delay ns Maximum Pulse-Width Distortion Under-Voltage Lockout (UVLO) with Hysteresis Extended Industrial Temperate Range: - C to C Safety and Regulatory Approvals: UL77,, VAC RMS for Minute DIN-EN/IEC77--,, V Peak Working Insulation Voltage Applications AC and Brushless DC Motor Drives Industrial Inverter Uninterruptible Power Supply Induction Heating Isolated IGBT/Power MOSFET Gate Drive Related Resources FOD8 A Output Current, High-Speed MOSFET/IGBT Gate Drive Optocoupler Datasheet Description The FOD88 is a 2. A output current gate drive optocoupler capable of driving medium-power IGBT/ MOSFETs. It is ideally suited for fast-switching driving of power IGBT and MOSFET used in motor-control inverter applications and high-performance power systems. The FOD88 utilizes Fairchild s Optoplanar coplanar packaging technology and optimized IC design to achieve reliable high-insulation voltage and high-noise immunity. It consists of an Aluminum Gallium Arsenide (AlGaAs) Light-Emitting Diode (LED) optically coupled to an integrated circuit with a high-speed driver for push-pull MOSFET output stage. The device is housed in a wide body, -pin, small-outline, plastic package. Functional Schematic ANODE CATHODE Figure. Schematic Figure 2. Package Outline V DD V SS FOD88 2. A Output Current, High-Speed, MOSFET/IGBT Gate Drive Optocoupler in Optoplanar Wide-Body SOP -Pin 2 Fairchild Semiconductor Corporation FOD88 Rev...

2 Truth Table LED Pin Configuration Pin Definitions V DD V SS Positive Going (Turn-on) Figure. Pin Configuration V DD V SS Positive Going (Turn-off) Off V to V V to V LOW On V to. V V to V LOW On. V to. V V to V Transition On. V to V V to V HIGH ANODE CATHODE Pin # Name Description Anode LED Anode Cathode LED Cathode V SS Negative Supply Voltage Output Voltage V DD Positive Supply Voltage V DD V SS FOD88 2. A Output Current, High-Speed, MOSFET/IGBT Gate Drive Optocoupler in Optoplanar Wide-Body SOP -Pin 2 Fairchild Semiconductor Corporation FOD88 Rev... 2

3 Safety and Insulation Ratings As per DIN EN/IEC77--, this optocoupler is suitable for safe electrical insulation only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Symbol Parameter Min. Typ. Max. Unit Installation Classifications per DIN VDE /.89 Table For Rated Mains Voltage < V RMS IIV For Rated Mains Voltage < V RMS IIV For Rated Mains Voltage < V RMS IIIII For Rated Mains Voltage < V RMS IIII Climatic Classification //2 Pollution Degree (DIN VDE /.89) 2 CTI Comparative Tracking Index 7 V PR Input-to-Output Test Voltage, Method b, V IORM x.87 = V PR, 2 % Production Test with t m = s, Partial Discharge < pc Input-to-Output Test Voltage, Method a, V IORM x. = V PR, 222 Type and Sample Test with t m = s, Partial Discharge < pc V IORM Maximum Working Insulation Voltage V peak V IOTM Highest Allowable Over Voltage 8 V peak External Creepage 8. mm External Clearance 8. mm Insulation Thickness. mm Safety Limit Values Maximum Values Allowed in the Event of a Failure T S Case Temperature C I S,INPUT Input Current 2 ma P S,OUTPUT Output Power mw R IO Insulation Resistance at T S, V IO = V 9 Ω FOD88 2. A Output Current, High-Speed, MOSFET/IGBT Gate Drive Optocoupler in Optoplanar Wide-Body SOP -Pin 2 Fairchild Semiconductor Corporation FOD88 Rev...

4 Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. T A = 2ºC unless otherwise specified. Symbol Parameter Value Units T STG Storage Temperature - to 2 C T OPR Operating Temperature - to C T J Junction Temperature - to 2 C T SOL Lead Solder Temperature 2 for s C Refer to Reflow Temperature Profile on page. I F(AVG) Average Input Current 2 ma V R Reverse Input Voltage. V I O(PEAK) Peak Output Current (). A V DD V SS Supply Voltage -. to V (PEAK) Peak Output Voltage to V DD V PD I Input Power Dissipation (2)() mw PD O Output Power Dissipation ()() mw Notes:. Maximum pulse width = µs, maximum duty cycle =.2%. 2. No derating required across operating temperature range.. Derate linearly from 2 C at a rate of.2 mw/ C.. Functional operation under these conditions is not implied. Permanent damage may occur if the device is subjected to conditions outside these ratings. Recommended Operating Conditions The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not recommend exceeding them or designing to absolute maximum ratings. Symbol Parameter Min. Max. Unit T A Ambient Operating Temperature - C V DD V SS Supply Voltage V I F(ON) Input Current (ON) ma V F(OFF) Input Voltage (OFF).8 V FOD88 2. A Output Current, High-Speed, MOSFET/IGBT Gate Drive Optocoupler in Optoplanar Wide-Body SOP -Pin 2 Fairchild Semiconductor Corporation FOD88 Rev...

5 Isolation Characteristics Apply over all recommended conditions; typical value is measured at T A = 2ºC. Symbol Parameter Conditions Min. Typ. Max. Units V ISO Input-Output Isolation Voltage Notes:. Device is considered a two-terminal device: pins and are shorted together and pins, and are shorted together.., VAC RMS for minute duration is equivalent to, VAC RMS for second duration. Electrical Characteristics T A = 2ºC, R.H. < %, t = s,, V RMS I I-O 2 µa, Hz ()() R ISO Isolation Resistance V I-O = V () Ω C ISO Isolation Capacitance V I-O = V, Frequency =. MHz () pf Apply over all recommended conditions, typical value is measured at V DD = V, V SS = Ground, T A = 2 C unless otherwise specified. Symbol Parameter Conditions Min. Typ. Max. Units Figure V F Input Forward Voltage I F = ma...8 V 9 Δ(V F / T A ) Temperature Coefficient -. mv/ C of Forward Voltage BV R Input Reverse I R = µa V Breakdown Voltage C IN Input Capacitance f = MHz, V F = V pf I OH High Level Output H = V DD V A, Current () H = V DD V -2. A,, 22 I OL Low Level Output L = V SS V.. A 7, 9 Current () L = V SS V 2. A 7, 9, 2 H High Level Output I F = ma, I O = -2. A V DD 7. V Voltage (7)(8) I F = ma, I O = - ma V DD. V,, 2 L Low Level Output I F = ma, I O = 2. A V SS 7. V 7 Voltage (7)(8) I F = ma, I O = ma V SS. V 8, 2 I DDH High Level Supply Current = Open, I F = 7 to ma 2.9. ma,, 2 I DDL I FLH V FHL Low Level Supply Current Threshold Input Current Low-to-High Threshold Input Voltage High-to-Low Under-Voltage Lockout Threshold = Open, V F = to.8 V 2.8. ma,, 2 I O = ma, > V. 7. ma 2, 8, 27 I O = ma, < V.8 V 28 V UVLO I F = ma, > V... V 2, 29 V UVLO- I F = ma, < V... V 2, 29 UVLO HYS Under-Voltage Lockout. V Threshold Hysteresis Notes: 7. In this test, H is measured with a dc load current of ma. When driving capacitive load H will approach V DD as I OH approaches A. 8. Maximum pulse width = ms, maximum duty cycle = 2%. FOD88 2. A Output Current, High-Speed, MOSFET/IGBT Gate Drive Optocoupler in Optoplanar Wide-Body SOP -Pin 2 Fairchild Semiconductor Corporation FOD88 Rev...

6 Switching Characteristics Apply over all recommended conditions, typical value is measured at V DD = V, V SS = Ground, T A = 2 C unless otherwise specified. Symbol Parameter Conditions Min. Typ. Max. Units Figure t PHL t PLH Propagation Delay Time to Logic LOW Output (9) I F = 7 ma to ma, Rg = Ω, Cg = nf, f = 2 khz, Duty Cycle = % 2 ns,,,, 7, Propagation Delay Time to Logic 2 ns,, HIGH Output (),, 7, PWD Pulse Width Distortion () t PHL t PLH PDD (Skew) t R t F 2 ns Propagation Delay Difference Between Any Two Parts (2) -9 9 Output Rise Time ns (% to 9%) Output Fall Time 2 ns (9% to %) t ULVO ON ULVO Turn-On Delay I F = ma, > V.7 µs t ULVO OFF ULVO Turn-Off Delay I F = ma, < V. µs CM H Common Mode Transient Immunity at Output HIGH T A = 2 C, V DD = V, I F = to ma, V CM = V () kv/µs CM L Common Mode Transient Immunity at Output LOW T A = 2 C, V DD = V, kv/µs V F = V, V CM = V () Notes: 9. Propagation delay t PHL is measured from the % level on the falling edge of the input pulse to the % level of the falling edge of the signal.. Propagation delay t PLH is measured from the % level on the rising edge of the input pulse to the % level of the rising edge of the signal.. PWD is defined as t PHL t PLH for any given device. 2. The difference between t PHL and t PLH between any two FOD88 parts under the same operating conditions, with equal loads.. Common mode transient immunity at output high is the maximum tolerable negative dvcm/dt on the trailing edge of the common mode impulse signal, V CM, to ensure that the output remains high (i.e., >. V).. Common mode transient immunity at output low is the maximum tolerable positive dvcm/dt on the leading edge of the common pulse signal, V CM, to ensure that the output remains low (i.e., <. V). FOD88 2. A Output Current, High-Speed, MOSFET/IGBT Gate Drive Optocoupler in Optoplanar Wide-Body SOP -Pin 2 Fairchild Semiconductor Corporation FOD88 Rev...

7 Typical Performance Characteristics VOH VDD OUTPUT HIGH VOLTAGE DROP (V) VOL OUTPUT LOW VOLTAGE (V) IOH OUTPUT HIGH CURRENT (A) T A = - C C -2. C -. V DD = V to V -. I F = ma to ma f = 2 Hz.2% Duty Cycle I OH OUTPUT HIGH CURRENT (A) = V DD V = V DD V V DD = V to V V.2 F = V or.8 V I O = ma... Figure. Output High Voltage Drop vs. Output High Current V DD = V to V I F = ma to ma f = 2Hz.2% Duty Cycle T A AMBIENT TEMPERATURE ( C) Figure. Output High Current vs. Ambient Temperature T A AMBIENT TEMPERATURE ( C) Figure 8. Output Low Voltage vs. Ambient Temperature VOHVDD OUTPUT HIGH VOLTAGE DROP (V) VOL OUTPUT LOW VOLTAGE (V) IOL OUTPUT LOW CURRENT (A) V DD = V to V I F = ma to ma I O = -ma Figure. Output High Voltage Drop vs. Ambient Temperature V DD = V to V I F = ma f = 2 Hz 99.8% Duty Cycle T A AMBIENT TEMPERATURE ( C) T A = - C 2 C C I OL OUTPUT LOW CURRENT (A) Figure 7. Output Low Voltage vs. Output Low Current V DD = V to V I F = ma f = 2 Hz 99.8% Duty Cycle = V DD V = V DD V T A AMBIENT TEMPERATURE ( C) Figure 9. Output Low Current vs. Ambient Temperature FOD88 2. A Output Current, High-Speed, MOSFET/IGBT Gate Drive Optocoupler in Optoplanar Wide-Body SOP -Pin 2 Fairchild Semiconductor Corporation FOD88 Rev... 7

8 Typical Performance Characteristics (Continued) IDD SUPPLY CURRENT (ma) IFLH LOW TO HIGH INPUT CURRENT THRESHOLD (ma) tp PROPAGATION DELAY (ns) V DD = V I F = ma (for I DDH ) I F = ma (for I DDL ) I DDH I DDL T A AMBIENT TEMPERATURE ( C) V DD = V to V Output = Open Figure. Supply Current vs. Ambient Temperature T A AMBIENT TEMPERATURE ( C) Figure 2. Low-to-High Input Current Threshold vs. Ambient Temperature 2 V DD = V f = khz % Duty Cycle R g = Ω C g = nf T A = 2 C t PHL t PLH 8 2 I F FORWARD LED CURRENT (ma) Figure. Propagation Delay vs. LED Forward Current IDD SUPPLY CURRENT (ma) tp PROPAGATION DELAY (ns) tp PROPAGATION DELAY (ns) I F = ma (for I DDH ) I F = ma (for I DDL ) T A = 2 C I DDH I DDL V DD SUPPLY VOLTAGE (V) 2 2 I F = ma R g = Ω C g = nf T A = 2 C f = khz % Duty Cycle Figure. Supply Current vs. Supply Voltage t PHL t PLH V DD SUPPLY VOLTAGE (V) Figure. Propagation Delay vs. Supply Voltage V DD = V I F = ma f = khz % Duty Cycle R g = Ω C g = nf t PHL t PLH T A AMBIENT TEMPERATURE ( C) Figure. Propagation Delay vs. Ambient Temperature FOD88 2. A Output Current, High-Speed, MOSFET/IGBT Gate Drive Optocoupler in Optoplanar Wide-Body SOP -Pin 2 Fairchild Semiconductor Corporation FOD88 Rev... 8

9 Typical Performance Characteristics (Continued) tp PROPAGATION DELAY (ns) VO OUTPUT VOLTAGE (V) 2 2 R g SERIES LOAD RESISTANCE (Ω) 2 2 V DD = V I F = ma f = 2 khz % Duty Cycle C g = nf T A = 2 C V DD = V T A = 2 C Figure. Propagation Delay vs. Series Load Resistance VO OUTPUT VOLTAGE (V) t PHL t PLH 2 I F FORWARD LED CURRENT (ma) Figure 8. Transfer Characteristics I F = ma T A = 2 C V UVLO =.7 V 2 2 V DD V SS SUPPLY VOLTAGE (V) Figure 2. Under-Voltage Lockout tp PROPAGATION DELAY (ns) IF FORWARD CURRENT (ma) V DD = V I F = ma f = 2 khz % Duty Cycle R g = Ω T A = 2 C t PHL t PLH 2 8 C g LOAD CAPACITANCE (nf).. Figure 7. Propagation Delay vs. Load Capacitance V F FORWARD VOLTAGE (V) V UVLO =. V C 2 C - C Figure 9. Input Forward Current vs. Forward Voltage FOD88 2. A Output Current, High-Speed, MOSFET/IGBT Gate Drive Optocoupler in Optoplanar Wide-Body SOP -Pin 2 Fairchild Semiconductor Corporation FOD88 Rev... 9

10 Test Circuit Pulse Generator PW =.99 ms Period = ms R OUT = Ω LED-IFmon Test Conditions: Frequency = 2 Hz Duty Cycle = 99.8% V DD = V to V I F = ma Pulse Generator PW = μs Period = ms R OUT = Ω LED-IFmon Test Conditions: Frequency = 2 Hz Duty Cycle =.2% V DD = V to V I F = ma to ma Pulse-In Pulse-In R2 Ω R Ω R2 Ω R Ω L Figure 2. I OL Test Circuit Figure 22. I OH Test Circuit H I OH C. μf I OL D C. μf D Current Probe C2 7 μf C. μf To Scope C2 7 μf C. μf To Scope C 7 μf C 7 μf Power Supply V DD = V to V Power Supply V = V Power Supply V DD = V to V Power Supply V = V FOD88 2. A Output Current, High-Speed, MOSFET/IGBT Gate Drive Optocoupler in Optoplanar Wide-Body SOP -Pin 2 Fairchild Semiconductor Corporation FOD88 Rev...

11 Test Circuit (Continued) I F = ma to ma I F = ma to ma V F = V to.8 V. μf Figure 2. H Test Circuit Figure 2. L Test Circuit Figure 2. I DDH Test Circuit Figure 2. I DDL Test Circuit ma. μf ma. μf. μf V DD = V to V V DD = V to V V DD = V V DD = V FOD88 2. A Output Current, High-Speed, MOSFET/IGBT Gate Drive Optocoupler in Optoplanar Wide-Body SOP -Pin 2 Fairchild Semiconductor Corporation FOD88 Rev...

12 Test Circuit (Continued) IF V F = V to.8 V I F = ma Figure 27. I FLH Test Circuit Figure 28. V FHL Test Circuit Figure 29. UVLO Test Circuit. μf > V. μf. μf = V V DD = V to V V DD = V to V V or V V DD Ramp FOD88 2. A Output Current, High-Speed, MOSFET/IGBT Gate Drive Optocoupler in Optoplanar Wide-Body SOP -Pin 2 Fairchild Semiconductor Corporation FOD88 Rev... 2

13 Test Circuit (Continued) f = khz DC = % V Probe I F UT I F Ω t PLH Figure. t PHL, t PLH, t R, and t F Test Circuit and Waveforms A B V CM V t R Δt V CM = V Switch at A: I F = ma Switch at B: I F = ma t PHL. μf Figure. CMR Test Circuit and Waveforms t F. μf Rg = Ω Cg = nf 9% % % H L V DD = V to V V DD = V FOD88 2. A Output Current, High-Speed, MOSFET/IGBT Gate Drive Optocoupler in Optoplanar Wide-Body SOP -Pin 2 Fairchild Semiconductor Corporation FOD88 Rev...

14 Reflow Profile Temperature ( C) TP TL Tsmax Tsmin Max. Ramp-up Rate = C/S Max. Ramp-down Rate = C/S Preheat Area 2 2 Time 2 C to Peak Time (seconds) Profile Freature Pb-Free Assembly Profile Temperature Minimum (T smin ) C Temperature Maximum (T smax ) 2 C Time (t S ) from (T smin to T smax ) s to 2 s Ramp-up Rate (t L to t P ) C/second maximum Liquidous Temperature (T L ) 27 C Time (t L ) Maintained Above (T L ) s to s Peak Body Package Temperature 2 C C / C Time (t P ) within C of 2 C s Ramp-Down Rate (T P to T L ) C/s maximum Time 2 C to Peak Temperature 8 minutes maximum t s Figure 2. Reflow Profile tl tp FOD88 2. A Output Current, High-Speed, MOSFET/IGBT Gate Drive Optocoupler in Optoplanar Wide-Body SOP -Pin 2 Fairchild Semiconductor Corporation FOD88 Rev...

15 Ordering Information Part Number Package Packing Method FOD88 Wide Body SOP -Pin Tube ( units per tube) FOD88R2 Wide Body SOP -Pin Tape and Reel (, units per reel) FOD88V Wide Body SOP -Pin, DIN EN/IEC77-- Option Tube ( units per tube) FOD88R2V All packages are lead free per JEDEC: J-STD-2B standard. Marking Information Wide Body SOP -Pin, DIN EN/ IEC77-- Option Tape and Reel (, units per reel) 2 Definitions 88 D X YY KK 7 Fairchild logo 2 Device number, e.g., 88 for FOD88 DIN EN/IEC77-- Option (only appears on component ordered with this option) Plant code, e.g., D Last digit year code, e.g., C for 22 Two-digit work week ranging from to 7 Lot traceability code 8 Package assembly code, W V W 8 FOD88 2. A Output Current, High-Speed, MOSFET/IGBT Gate Drive Optocoupler in Optoplanar Wide-Body SOP -Pin 2 Fairchild Semiconductor Corporation FOD88 Rev...

16 Package Dimensions. C PIN ONE INDICATOR 2.9 MAX GAUGE PLANE.2 C SEATING PLANE...27 A B SCALE:.2: (.2).. Figure. Wide Body SOP -Pin Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor s online packaging area for the most recent package drawings: Carrier Tape Specification (SOIC-L OPTO R2 & R2ption) For current carrier tape specifications, visit Fairchild Semiconductor s online packaging area: 2. (R.29) 8 X.. C D.8.8. C TIPS.2 C A-B D SEATING PLANE X. C (R.) LAND PATTERN RECOMMENDATION A. 2. NOTES: UNLESS OTHERWISE SPECIFIED A) THIS PACKAGE DOES NOT CONFORM TO ANY STANDARD. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS D) DRAWING CONFORMS TO ASME Y.M-99 E) DRAWING FILE NAME: MKT-MBREV2 FOD88 2. A Output Current, High-Speed, MOSFET/IGBT Gate Drive Optocoupler in Optoplanar Wide-Body SOP -Pin 2 Fairchild Semiconductor Corporation FOD88 Rev...

17 FOD88 2. A Output Current, High-Speed, MOSFET/IGBT Gate Drive Optocoupler in Optoplanar Wide-Body SOP -Pin Fairchild Semiconductor Corporation FOD88 Rev...

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