ACNW Amp High Output Current IGBT Gate Drive Optocoupler. Features. Applications
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1 ACNW9. Amp High Output Current IGBT Gate Drive Optocoupler Data Sheet Lead (Pb) Free RoHS fully compliant RoHS fully compliant options available; -xxxe denotes a lead-free product Description The ACNW9 contains an AlGaAs LED, which is optically coupled to an integrated circuit with a power output stage. This optocoupler is ideally suited for driving power IGBTs and MOSFETs used in motor control inverter applications. The high operating voltage range of the output stage provides the drive voltages required by gate controlled devices. The voltage and high peak output current supplied by this optocoupler make it ideally suited for direct driving IGBTs with ratings up to V/ A, V/ A. For IGBTs with higher ratings, the ACNW9 can be used to drive a discrete power stage which drives the IGBT gate. The ACNW9 has the highest insulation voltage of V IORM = Vpeak in the IEC/ EN/DIN EN --. Functional Diagram N/C ANODE V CC V O Features. A Maximum Peak Output Current kv/µs Minimum Common Mode Rejection (CMR) at V CM = V. V Maximum Low Level Output Voltage (V OL ) Eliminates Need for Negative Gate Drive I CC = ma Maximum Supply Current Under Voltage Lock-Out Protection (UVLO) with Hysteresis Wide Operating V CC Range: to Volts ns Maximum Switching Speeds Industrial Temperature Range: - C to C Safety Approval UL Recognized V rms for min. CSA Approval IEC/EN/DIN EN -- Approved V IORM = V peak CATHODE V EE Applications IGBT/MOSFET Gate Drive N/C SHIELD V EE AC/Brushless DC Motor Drives Industrial Inverters TRUTH TABLE Switch Mode Power Supplies LED V CC - V EE POSITIVE GOING (i.e., TURN-ON) V CC - V EE NEGATIVE GOING (i.e., TURN-OFF) OFF - V - V LOW ON - V - 9. V LOW ON -. V 9. - V TRANSITION ON. - V - V HIGH A. μf bypass capacitor must be connected between pins and. VO CAUTION: It is advised that normal static precautions be taken in handling and assembly of this component to prevent damage and/or degradation which may be induced by ESD.
2 Ordering Information ACNW9 is UL Recognized with Vrms for minute per UL. Part number ACNW9 Option RoHS Compliant Package Surface Mount Gull Wing Tape & Reel IEC/EN/DIN EN -- Quantity -E X per tube mil -E X X X per tube DIP- -E X X X X per reel To order, choose a part number from the part number column and combine with the desired option from the option column to form an order entry. Example : ACNW9-E to order product of mil DIP Gull Wing Surface Mount package in Tape and Reel packaging with IEC/EN/DIN EN -- Safety Approval in RoHS compliant. Example : ACNW9-E to order product of mil DIP package in tube packaging and RoHS compliant. Option datasheets are available. Contact your Avago sales representative or authorized distributor for information.
3 Package Outline Drawings ACNW9 Outline Drawing (-pin Wide Body Package). ±. (. ±.) A HCNWXXXX TYPE NUMBER DATE CODE. (.) MAX. 9. ±. (. ±.) YYWW. (.) MAX.. (.) MAX.. (.) TYP. TYP (..) -.). (.).9 (.). (.) MIN.. (.) TYP.. ±. (. ±.). (.). (.) ACNW9 Gull Wing Surface Mount Option Outline Drawing. ±. (. ±.) LAND PATTERN RECOMMENDATION 9. ±. (. ±.). (.). (.).9 (.9). (.) MAX.. ±. (. ±.). (.) MAX.. (.) MAX.. ±. (. ±.). (.) BSC. ±. (. ±.). ±. (.9 ±.).. -. (..) -.) NOM. Dimensions in inches (millimeters) Note: Floating Lead Protrusion is. mm ( mils) max.
4 Solder Reflow Temperature Profile TEMPERATURE ( C) PREHEATING RATE C C/. C/SEC. REFLOW HEATING RATE. C ±. C/SEC. C C C C C/. C. C ±. C/SEC. PREHEATING TIME C, 9 SEC. PEAK TEMP. C SEC. SEC. SEC. PEAK TEMP. C SOLDERING TIME C PEAK TEMP. C ROOM TEMPERATURE TIME (SECONDS) TIGHT TYPICAL LOOSE Recommended Pb-Free IR Profile TEMPERATURE T p T L T smax T smin /- C C RAMP-UP C/SEC. MAX. - C t s PREHEAT to SEC. t p t L TIME WITHIN C of ACTUAL PEAK TEMPERATURE SEC. RAMP-DOWN C/SEC. MAX. to SEC. t C to PEAK TIME NOTES: THE TIME FROM C to PEAK TEMPERATURE = MINUTES MAX. T smax = C, T smin = C Note: Non-halide flux should be used.
5 Dependence of Safety Limiting Values on Temperature P S POWER mw, I S INPUT CURRENT ma 9 T S CASE TEMPERATURE C P S, S, OUTPUT I S, INPUT Note: The Thermal Derating Graph above is in relation to Figure and Figure and S = cm. Regulatory Information The ACNW9 is approved by the following organizations: IEC/EN/DIN EN -- Approval under: IEC -- :99 A: EN --: A: DIN EN -- (VDE Teil ):- UL Approval under UL, component recognition program up to V ISO = V RMS expected prior to product release. File E. CSA Approval under CSA Component Acceptance Notice #, File CA expected prior to product release. Table. IEC/EN/DIN EN -- Insulation Characteristics* Description Symbol Characteristic Unit Installation classification per DIN VDE /.9, Table for rated mains voltage V rms for rated mains voltage V rms for rated mains voltage V rms for rated mains voltage V rms for rated mains voltage V rms Climatic Classification // Pollution Degree (DIN VDE /.9) Maximum Working Insulation Voltage V IORM V peak Input to Output Test Voltage, Method b** V IORM x.=v PR, % Production Test with t m = sec, Partial discharge < pc V PR V peak Input to Output Test Voltage, Method a** V IORM x.=vpr, Type and Sample Test, t m = sec, Partial discharge < pc V PR V peak Highest Allowable Overvoltage (Transient Overvoltage t ini = sec) V IOTM V peak Safety-limiting values maximum values allowed in the event of a failure, also see Figure. Case Temperature Input Current Output Power T S I S, INPUT P S, OUTPUT Insulation Resistance at T S, V IO = V RS 9 Ω * Isolation characteristics are guaranteed only within the safety maximum ratings which must be ensured by protective circuits in application. Surface mount classification is class A in accordance with CECCOO. ** Refer to the optocoupler section of the Isolation and Control Components Designer s Catalog, under Product Safety Regulations section IEC/EN/ DIN EN --, for a detailed description of Method a and Method b partial discharge test profiles. I IV I IV I IV I IV I III C ma mw
6 Table. Insulation and Safety Related Specifications Parameter Symbol ACNW9 Units Conditions Minimum External Air Gap (Clearance) Minimum External Tracking (Creepage) Minimum Internal Plastic Gap (Internal Clearance) Tracking Resistance (Comparative Tracking Index) L() 9. mm Measured from input terminals to output terminals, shortest distance through air. L(). mm Measured from input terminals to output terminals, shortest distance path along body.. mm Through insulation distance conductor to conductor, usually the straight line distance thickness between the emitter and detector. CTI > V DIN IEC /VDE Part Isolation Group IIIa Material Group (DIN VDE, /9, Table ) Table. Absolute Maximum Ratings Parameter Symbol Min. Max. Units Note Storage Temperature T S - C Operating Temperature T A - C Output IC Junction Temperature T J C Average Input Current I F(AVG) ma Peak Transient Input Current (< µs pulse width, pps) I F(TRAN). A Reverse Input Voltage V R V High Peak Output Current I OH(PEAK). A Low Peak Output Current I OL(PEAK). A Total Output Supply Voltage (V CC - V EE ) -. V Input Current (Rise/Fall Time) t r(in) / t f(in) ns Output Voltage V O(PEAK) -. V CC V Output IC Power Dissipation P O mw Total Power Dissipation P T mw Lead Solder Temperature C for sec.,. mm below seating plane Solder Reflow Temperature Profile See Package Outline Drawings section Table. Recommended Operating Conditions Parameter Symbol Min. Max. Units Note Operating Temperature T A - C Output Supply Voltage (V CC - V EE ) V Input Current (ON) I F(ON) ma Input Voltage (OFF) V F(OFF) -.. V
7 Table. Electrical Specifications (DC) Unless otherwise noted, all typical values are at T A = C, V CC - V EE = V, V EE = Ground; all Minimum/Maximum specifications are at Recommended Operating Conditions (T A = - to C, I F(ON) = to ma, V F(OFF) = -. to. V, V CC = to V, V EE = Ground) Parameter Symbol Min. Typ. Max. Units Test Conditions Fig. Note High Level Output Current I OH.. A V O = V CC -,,. A V O = V CC Low Level Output Current I OL.. A V O = V EE.,,. A V O = V EE High Level Output Voltage V OH V CC - V CC - V I O = - ma,, 9, Low Level Output Voltage V OL.. V I O = ma,, High Level Supply Current I CCH.. ma Output open, I F = to ma, Low Level Supply Current I CCL.. ma Output open, V F = -. to. V Threshold Input Current Low to High I FLH.. ma I O = ma, V O > V 9,, Threshold Input Voltage High to Low V FHL. V Input Forward Voltage V F...9 V I F = ma Temperature Coefficient of Input Forward Voltage ΔV F /ΔT A -. mv/ C Input Reverse Breakdown Voltage BV R V I R = µa Input Capacitance C IN pf f = MHz, V F = V UVLO Threshold V UVLO... V V O > V, I F = ma, V UVLO UVLO Hysteresis UVLO HYS. Table. Switching Specifications (AC) Unless otherwise noted, all typical values are at T A = C, V CC - V EE = V, V EE = Ground; all Minimum/Maximum specifications are at Recommended Operating Conditions (T A = - to C, I F(ON) = to ma, V F(OFF) = -. to. V, V CC = to V, V EE = Ground). Parameter Symbol Min. Typ. Max. Units Test Conditions Fig. Note Propagation Delay Time to High Output Level t PLH... µs R g = Ω,,,, Propagation Delay Time to Low Output Level t C g = nf,,, PHL... µs f = khz, Pulse Width Distortion PWD. µs Duty Cycle = %, Propagation Delay Difference Between Any Two Parts PDD (t PHL - t PLH ). µs I F = ma, V CC = V, Rise Time t r. µs Fall Time t f. µs UVLO to Turn On Delay t UVLO,ON. µs V O > V, I F = ma UVLO to Turn Off Delay t UVLO,OFF. µs V O < V, I F = ma Output High Level Common Mode Transient Immunity Output Low Level Common Mode Transient Immunity CM H kv/µs T A = C, I F = to ma, V CM = V, V CC = V CM L kv/µs T A = C, V F = V, V CM = V, V CC = V,,
8 Table. Package Characteristics Unless otherwise noted, all typical values are at T A = C; all Minimum/Maximum specifications are at Recommended Operating Conditions. Parameter Symbol Min. Typ. Max. Units Test Conditions Fig. Note Input-Output Momentary Withstand Voltage* V ISO V RMS RH < %, t = min., T A = C Input-Output Resistance R I-O Ω V I-O = V DC, T A = C 9 V I-O = V DC, T A = C Input-Output Capacitance C I-O.. pf f = MHz LED-to-Ambient Thermal Resistance θ LA See Thermal LED-to-Detector Thermal Resistance θ LD Model Section Detector-to-Ambient Thermal Resistance θ DA C/W See Thermal Model in Application Notes Section 9,,, 9 * The Input-Output Momentary Withstand Voltage is a dielectric voltage rating that should not be interpreted as an input-output continuous voltage rating. For the continuous voltage rating, refer to your equipment level safety specification or Avago Technologies Application Note entitled Optocoupler Input-Output Endurance Voltage. Notes:. Derate linearly above C free-air temperature at a rate of. ma/ C.. Maximum pulse width = µs. This value is intended to allow for component tolerances for designs with I O peak minimum =. A. See Applications section for additional details on limiting I OH peak.. Derate linearly above C free-air temperature at a rate of. ma/ C.. Derate linearly above C free-air temperature at a rate of. ma/ C.. Maximum pulse width = µs.. In this test V OH is measured with a dc load current. When driving capacitive loads V OH will approach V CC as I OH approaches zero amps.. Maximum pulse width = ms.. In accordance with UL, each optocoupler is proof tested by applying an insulation test voltage Vrms for second (leakage detection current limit, I I-O µa). 9. Device considered a two-terminal device: pins,,, and shorted together and pins,,, and shorted together.. The difference between tphl and t PLH between any two ACNW9 parts under the same test condition.. Pins and need to be connected to LED common.. Common mode transient immunity in the high state is the maximum tolerable dvcm/dt of the common mode pulse, VCM, to assure that the output will remain in the high state (i.e., V O >. V).. Common mode transient immunity in a low state is the maximum tolerable dvcm/dt of the common mode pulse, VCM, to assure that the output will remain in a low state (i.e., V O <. V).. This load condition approximates the gate load of a V/A IGBT.. Pulse Width Distortion (PWD) is defined as tphl-tplh for any given device.
9 (V OH V CC ) HIGH OUTPUTVOLTAGE DROP - V T A - TEMPERATURE - C Figure. V OH vs. Temperature IOH - OUTPUT HIGH CURRENT - A T A - TEMPERATURE - C Figure. I OH vs. Temperature (V OH V CC ) HIGH OUTPUTVOLTAGE DROP - V I OH OUTPUT HIGH CURRENT A Figure. V OH vs. I OH - C C C V OL OUTPUT LOW VOLTAGE V T A - TEMPERATURE - C Figure. V OL vs. Temperature I OL OUTPUT LOW CURRENT - A - - T A - TEMPERATURE - C V OL OUTPUT LOW VOLTAGE V - C C C I OL OUTPUT LOW CURRENT - A Figure. I OL vs. Temperature Figure. V OL vs. I OL. 9
10 I CC SUPPLY CURRENT - ma.... I CCH I CCL I CC SUPPLY CURRENT - ma.... I CCH I CCL. - - TA TEMPERATURE C Figure. I CC vs. Temperature. V CC SUPPLY VOLTAGE - V Figure. I CC vs. V CC I FLH LOW TO HIGH CURRENT THRESHOLD ma - - T A TEMPERATURE - C T p PROPAGATION DELAY - ns T PHL T PLH V CC SUPPLY VOLTAGE - V Figure 9. I FLH vs. Temperature Figure. Propagation delay vs. V CC Tp PROPAGATION DELAY - ns T PHL T PLH Tp PROPAGATION DELAY - ns T PHL T PLH I F FORWARD LED CURRENT - ma Figure. Propagation delay vs. I F - - T A TEMPERATURE - C Figure. Propagation delay vs. Temperature
11 Tp PROPAGATION DELAY ns T PHL T PHL T PLH T PLH Rg SERIES LOAD RESISTANCE Ω Cg LOAD CAPACITANCE - nf Tp PROPAGATION DELAY ns Figure. Propagation Delay vs. Rg Figure. Propagation Delay vs. Cg V OL OUTPUT LOW VOLTAGE V IF FORWARD CURRENT ma... V F I F T A = C I F FOWARD LED CURRENT - ma V F FORWARD VOLTAGE VOLTS. Figure. Transfer Characteristics Figure. Input Current vs. Forward Voltage
12 I F = to ma. µf V I OH. µf V CC = to V. V IOL V CC = to V Figure. I OH Test Circuit Figure. I OL Test Circuit I F = to ma. µf V OH ma V CC = to V. µf V OL ma V CC = to V Figure 9. V OH Test Circuit Figure. V OL Test Circuit I F. µf V O > V V CC = to V I F = ma. µf V O > V V CC Figure. I FLH Test Circuit Figure. UVLO Test Circuit
13 IF = to ma Ω KHz % DUTY CYCLE. µf VO Ω nf V CC = to V I F V OUT t r t f 9% % % t PLH t PHL Figure. t PLH, t PHL, t r, and t f Test Circuit and Waveforms V CM V IF A B. µf V O V V CC = V Δt δv V CM δt = Δt V O V OH SWITCH AT A: I F = ma V CM = V Figure. CMR Test Circuit and Waveforms V O SWITCH AT B: I F = ma V OL Application Notes Figure and show two recommended application circuits. Figure show a single power supply gate driver using the driver s maximum V OL value of.v. Figure show a dual power supply gate driver circuit which is applicable for higher power IGBT driving due to the existence of higher miller capacitance in these IGBTs. V Ω _ VCC= V.µF _ R g Q R PULL-DOWN Q Figure. Recommended LED drive and application circuit V CE - V CE - HVDC -PHASE AC -HVDC For high side bootstrap driving, note that the bypass capacitor of.µf in parallel with µf or above to be connected across VCC and VEE is important to deliver high peak output current.
14 V _ Ω.µF R g R PULL-DOWN _ V CC = V _ VEE = -V Q Q V CE - V CE - HVDC -PHASE AC -HVDC Figure. ACNW9typical application circuit with negative IGBT gate drive Selecting the Gate Resistor (Rg) to minimize IGBT Switching Losses. Step : Calculate Rg Minimum from the I OL Peak Specification The IGBT and Rg in Figure can be analyzed as a simple RC circuit with a voltage supplied by the ACNW9. The operating temperature is C. ( VCC V EE VOL ) Rg I OLPEAK ( V V.V ) = A. Ω The VOL value of.v in the previous equation is a conservative value of VOL at the peak current of.a (see Figure ). At lower Rg values the voltage supplied by the ACNW9 is not an ideal voltage step. This results in lower peak currents (more margin) than predicted by this analysis. When negative gate drive is not used, V EE in the previous equation is equal to zero volts. For the circuit in Figure with I F (worst case) = ma, Rg =.Ω, Max Duty Cycle = %, Qg = nc, f = khz and T A max = C: P E = ma *.9V *. = mw P O =. ma * V μj * khz = mw 9 mw = mw < mw (P C = mw-c*. mw/c) The value of. ma for ICC in the previous equation was obtained by derating the ICC max of ma to ICC max at C (see Figure ). The above computation shows that the power dissipation is within the specified limits. However, designers should verify that the thermal limits have not been violated by using the thermal model provided in this datasheet. This thermal model obtained based on JEDEC specification. PE Parameter I F V F Duty Cycle Description LED Current LED On Voltage Maximum LED Duty Cycle Step : Check the ACNW9 Power Dissipation and Increase Rg if Necessary. The ACNW9 total power dissipation (PT) is equal to the sum of the emitter power (PE) and the output power (PO): P T = P E P O P E = I F * V F * Duty Cycle P O = P O(BIAS) P O (SWITCHING) = I CC * (V CC - V EE ) E SW (R G, Q G ) * f P O Parameter I CC V CC V EE E SW (Rg,Qg) f Description Supply Current Positive Supply Voltage Negative Supply Voltage Energy Dissipated in the HCPL- for each IGBT Switching Cycle (See Figure ) Switching Frequency
15 Energy per cycle [ µj ] Figure. Energy dissipated in the ACWN9 for each IGBT switching cycle Under Voltage Lockout Feature The ACNW9 contains an under voltage lockout (UVLO) feature that is designed to protect the IGBT under fault conditions which cause the ACNW9 supply voltage (equivalent to the fully-charged IGBT gate voltage) to drop below a level necessary to keep the IGBT in a low resistance state. When the ACNW9 output is in the high state and the supply voltage drops below the ACNW9 V UVLO threshold (9. < V UVLO <.) the optocoupler output will go into the low state with a typical delay, UVLO Turn Off Delay, of. μs. When the ACNW9 output is in the low state and the supply voltage rises above the ACNW9 V UVLO threshold (. < V UVLO <.) the optocoupler output will go into the high state (assumes LED is ON ) with a typical delay, UVLO Turn On Delay of. μs. V O OUTPUT VOLTAGE V Figure. Under Voltage Lock Out (., 9.) Rg [Ω] (.,.) (.,.) (V CC - V EE ) SUPPLY VOLTAGE V (.,.) nc nc nc Thermal Model Introduction For application which requires an output gate current more than A, adequate PCB pad heat-sink must be provided to dissipate the power loss in the package. Failure to provide proper heat dissipation will potentially damage the gate drive after pro-long usage. This thermal model allows designer to compute the temperature of the LED and detector. Definitions θ:thermal impedance from LED junction to ambient θ:thermal impedance from LED to detector (output IC) θ:thermal impedance from detector (output IC) junction to ambient Ambient Temperature: Measured approximately. cm above the optocoupler, with no forced air. Description This thermal model assumes that an -pin single-channel plastic package optocoupler is soldered into a. cm x. cm printed circuit board (PCB). The temperature at the LED and Detector junctions of the optocoupler can be calculated using the equations below. TEA = A*PE A*PD TDA = A*PE A*PD where, TEA = Temperature difference between ambient and LED TDA = Temperature difference between ambient and detector PE = Power dissipation from LED PD = Power dissipation from detector A, A, A, A thermal coefficients (units in C/W) are functions of the thermal impedances θ, θ, θ (See Note ). Table. Thermal Model-B Coefficient Data (units in C/W) S (cm) A A, A A Jedec Specifications A A, A A low K board.. High K board.. 9.
16 Figure 9. Thermal Model-B Diagram A A/A A Thermal Coefficient Figure. Evaluation thermal board design S (cm) Figure. Thermal Coefficient Plot against S Notes:. Maximum junction temperature for above parts: C.. A = θ (θ θ); A = A = (θ θ) / (θ θ θ); A = θ (θ θ). For product information and a complete list of distributors, please go to our web site: Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies Limited in the United States and other countries. Data subject to change. Copyright Avago Technologies Limited. All rights reserved. AV-9EN - March,
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